公开(公告)号：US08770142B2

公开(公告)日：2014-07-08

申请号：US12560705

申请日：2009-09-16

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: C23C16/00 ,  H01L21/306 ,  C23F1/00 ,  H01J7/24 ,  H05B31/26 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/45578 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32541

Abstract: A plasma generator may include a first electrode extending in one direction, and a second electrode spaced apart from the first electrode. Facing surfaces of the first electrode and the second electrode may have spiral shapes along the one direction. A cross-section of the first electrode and a cross-section of the second electrode, which are perpendicular to the one direction, may have at least partially concentric shapes. An electrode for generating plasma may include a platform extending in one direction, and at least one protruding thread spirally formed on a surface of the platform along the one direction.

Abstract translation: 等离子体发生器可以包括沿一个方向延伸的第一电极和与第一电极间隔开的第二电极。 第一电极和第二电极的面对表面可沿着该一个方向具有螺旋形状。 第一电极的横截面和垂直于一个方向的第二电极的横截面可以具有至少部分同心的形状。 用于产生等离子体的电极可以包括沿着一个方向延伸的平台，以及至少一个突出的螺纹螺旋地沿着该一个方向形成在平台的表面上。

公开(公告)号：US08758512B2

公开(公告)日：2014-06-24

申请号：US12794209

申请日：2010-06-04

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: C23C16/00

CPC classification number: C23C16/45551 ,  C01B21/076 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40

Abstract: A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes at least one first injection portion for injecting a reacting material to a recess in a first portion of the vapor deposition reactor. A second portion is connected to the first space and has a recess connected to the recess of the first portion. The recess of the second portion is maintained to have pressure lower than the pressure in the first space. A third portion is connected to the second space, and an exhaust portion is connected to the third space.

Abstract translation: 蒸镀反应器及薄膜形成方法。 气相沉积反应器包括至少一个用于将反应材料注入到蒸镀反应器的第一部分中的凹部的第一注射部分。 第二部分连接到第一空间并且具有连接到第一部分的凹部的凹部。 第二部分的凹部被保持为具有低于第一空间中的压力的​​压力。 第三部分连接到第二空间，并且排气部分连接到第三空间。

公开(公告)号：US08501633B2

公开(公告)日：2013-08-06

申请号：US13572555

申请日：2012-08-10

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: H01L21/31

CPC classification number: H01L21/76224 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/3141 ,  H01L21/31604

Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.

Abstract translation: 通过在具有凹部的基板上形成第一材料层来制造基板结构，使用与第一材料反应的第二材料从基板的除了凹部的部分除去第一材料层，并从 所述第一材料层使用与所述第一材料反应的第三材料。 制造器件的方法可以包括形成衬底结构的方法。

公开(公告)号：US20130174980A1

公开(公告)日：2013-07-11

申请号：US13548885

申请日：2012-07-13

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: C09J5/06

CPC classification number: C09J5/06 ,  C08G77/60 ,  C08K3/04 ,  C08K3/08 ,  C08K3/14 ,  C09D7/61 ,  C09D7/67 ,  C09D7/68 ,  C09D7/69 ,  C09D183/16 ,  C09J183/16 ,  H01L21/67306 ,  Y10T156/10 ,  C08K3/02

Abstract: A method of using a high-strength bonding and coating mixture is disclosed. The mixture includes a silicon compound having a polycarbosilane backbone and a powder having a plurality of individual powder grains. Each of the powder grains has a diameter substantially between 0.05 micrometers and 50 micrometers. The mixture is applied to one or more work pieces and the work piece(s) is (are) heated in either an inert or reduction environment to a temperature sufficient to decompose the silicon compound into gaseous atoms and radicals of silicon and carbon.

Abstract translation: 公开了一种使用高强度粘结和涂覆混合物的方法。 该混合物包括具有聚碳硅烷主链的硅化合物和具有多个单个粉末颗粒的粉末。 每个粉末颗粒的直径基本上在0.05微米和50微米之间。 将混合物施加到一个或多个工件上，并将工件在惰性或还原环境中加热到足以将硅化合物分解成气态原子和硅和碳自由基的温度。

公开(公告)号：US20120114877A1

公开(公告)日：2012-05-10

申请号：US13285417

申请日：2011-10-31

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/452 ,  H05H1/24

CPC classification number: H01J37/32899 ,  C23C16/45538 ,  C23C16/45551

Abstract: Two or more plasma chambers are provided in a radical reactor to generate radicals of gases under different conditions for use in atomic layer deposition (ALD) process. The radical reactor has a body with multiple channels and corresponding process chambers. Each plasma chamber is surrounded by an outer electrode and has an inner electrode extending through the chamber. When voltage is applied across the outer electrode and the inner electrode with gas present in the plasma chamber, radicals of the gas is generated in the plasma chamber. The radicals generated in the plasma chamber are then injected into a mixing chamber for mixing with radicals of another gas from another plasma chamber, and injected onto the substrate. By providing two or more plasma chambers, different radicals of gases can be generated within the same radical reactor, which obviates the need for separate radical generators.

Abstract translation: 在自由基反应器中提供两个或更多个等离子体室，以在用于原子层沉积（ALD）工艺的不同条件下产生气体自由基。 自由基反应器具有多个通道的主体和相应的处理室。 每个等离子体室被外部电极包围，并且具有延伸穿过该室的内部电极。 当通过存在于等离子体室中的气体在外电极和内电极上施加电压时，在等离子体室中产生气体的自由基。 然后将等离子体室中产生的自由基注入到混合室中，以与来自另一等离子体室的另一种气体的自由基混合，并注入到基板上。 通过提供两个或更多个等离子体室，可以在相同的自由基反应器内产生不同的气体基团，这消除了对单独的自由基发生器的需要。

公开(公告)号：US20110290551A1

公开(公告)日：2011-12-01

申请号：US13107750

申请日：2011-05-13

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H05K5/00 ,  H05H1/24 ,  C23C16/40

CPC classification number: H01L51/5253 ,  H01L51/0096 ,  H01L2251/5338 ,  H01L2251/5369 ,  Y02E10/549

Abstract: A structure for protecting a device includes a first layer, one or more first microstructures on the first layer, and a second layer disposed on the first layer. The second layer is disposed on a surface of the first layer on which one or more microstructures are provided. The microstructure may have a hemispheric shape or other random shapes having a curved surface. Since the area of the interface surface between layers is increased due to the at least one microstructure, the stress per unit area of the interface surface is reduced. Further, the microstructure increases the length of the path that ambient species need to travel in order to reach a device or other active components, thereby reducing the amount of infiltrating ambient species.

Abstract translation: 用于保护装置的结构包括第一层，第一层上的一个或多个第一微结构和设置在第一层上的第二层。 第二层设置在其上设置有一个或多个微结构的第一层的表面上。 微结构可以具有半球形状或具有弯曲表面的其它随机形状。 由于至少一个微结构，由于层间界面的面积增加，因此界面表面的每单位面积的应力减小。 此外，微结构增加环境物质需要行进的路径的长度以便到达装置或其它活性组分，从而减少渗透环境物质的量。

公开(公告)号：US20110117514A1

公开(公告)日：2011-05-19

申请号：US12618566

申请日：2009-11-13

Applicant: Sang In Lee ,  Fergal John O'Moore ,  Karl Anthony Williams

Inventor： Sang In Lee ,  Fergal John O'Moore ,  Karl Anthony Williams

IPC: H01L21/683 ,  C23C14/48 ,  B32B9/00

CPC classification number: C23C8/80 ,  C23C8/02 ,  H01L21/68757

Abstract: A method of fabricating the semiconductor wafer processing fixtures for having longer longevity on high stressed film applications such as LPCVD-SiN, silicon carbide and other ceramics than that of non-processed parts. One aspect of the invention includes nitriding, oxidizing, or carbiding a surface layer of a polysilicon part, such as furnaceware, for converting silicon to a silicon compound and its converted surface covers and masks the underlying polycrystalline structure. A plasma immersion ion implantation of a heavy noble gas or carbon, silicon or nitrogen is followed by to form high-energy states creating gettering states adjacent the surface and the ion implanted region serves to anchor production layers such as LPCVD-SiN forming on the polysilicon part. As a result of gettering effect, tightly bonded high stressed film onto a polysilicon part allows the CVD deposition of much thicker films without peeling or cracking as long as the gettering effect remains.

Abstract translation: 一种制造半导体晶片加工夹具的方法，其在诸如LPCVD-SiN，碳化硅和其它陶瓷的高应力膜应用上具有比非加工部件更长的寿命。 本发明的一个方面包括氮化，氧化或碳化多晶硅部分（例如炉具）的表面层，用于将硅转化为硅化合物，并且其转化的表面覆盖并掩蔽下面的多晶结构。 重稀土气体或碳，硅或氮的等离子体浸没离子注入之后，形成高能状态，从而形成邻近表面的吸气状态，并且离子注入区域用于锚定诸如在多晶硅上形成的LPCVD-SiN的生产层 部分。 作为吸气效应的结果，只要吸附效果仍然存在，紧密结合的高应力膜就可以使CVD沉积更厚的膜而不会发生剥离或开裂。

公开(公告)号：US20110076421A1

公开(公告)日：2011-03-31

申请号：US12890504

申请日：2010-09-24

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/50 ,  C23C16/458 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC classification number: C23C16/045 ,  C23C16/00 ,  C23C16/40 ,  C23C16/403 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/545

Abstract: A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes first to third portions arranged along an arc of a circle. The first portion includes at least one first injection portion for injecting a material to a recess in the first portion. The second portion is adjacent to the first portion and has a recess communicatively connected to the recess of the first portion. The third portion is adjacent to the second portion and has a recess communicatively connected to the recess of the second portion and an exhaust portion for discharging the material from the vapor deposition reactor.

Abstract translation: 蒸镀反应器及薄膜形成方法。 气相沉积反应器包括沿圆弧排列的第一至第三部分。 第一部分包括用于将材料注射到第一部分中的凹部中的至少一个第一注射部分。 第二部分与第一部分相邻，并具有与第一部分的凹部通信连接的凹部。 第三部分与第二部分相邻并且具有与第二部分的凹部连通的凹部和用于从气相沉积反应器排出材料的排气部分。

公开(公告)号：US20100068413A1

公开(公告)日：2010-03-18

申请号：US12560690

申请日：2009-09-16

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: B01J19/08 ,  C23C16/54

CPC classification number: C23C16/50 ,  C23C16/45514 ,  C23C16/45595 ,  C23C16/54

Abstract: A vapor deposition reactor may include a first electrode including a first channel and at least one first injection hole connected to the first channel. a second electrode electrically separated from the first electrode, and a power source for applying power between the first electrode and the second electrode to generate plasma from a reactant gas between the first electrode and the second electrode. Also provided is a method for forming thin film using the vapor deposition reactor.

Abstract translation: 气相沉积反应器可以包括包括第一通道的第一电极和连接到第一通道的至少一个第一注入孔。 与第一电极电分离的第二电极和用于在第一电极和第二电极之间施加电力以从第一电极和第二电极之间的反应气体产生等离子体的电源。 还提供了使用蒸镀反应器形成薄膜的方法。

公开(公告)号：US20100041213A1

公开(公告)日：2010-02-18

申请号：US12539477

申请日：2009-08-11

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L21/20 ,  C23C16/458 ,  C23C16/455

CPC classification number: H01L21/02521 ,  C23C16/45551 ,  H01L21/4814

Abstract: A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.

Abstract translation: 气相沉积反应器包括填充有第一材料的腔室和腔室中的至少一个反应模块。 反应模块可以被配置为使得基板通过反应模块通过基板和反应模块之间的相对运动。 反应模块可以包括用于将第二材料注入基底的注射单元。 一种用于形成薄膜的方法包括将基板定位在室中，填充室中的第一材料，相对于室中的反应模块移动基板，以及在基板通过反应模块时将第二材料注入到基板。