公开(公告)号：US20140273489A1

公开(公告)日：2014-09-18

申请号：US14246952

申请日：2014-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US20140273481A1

公开(公告)日：2014-09-18

申请号：US14246937

申请日：2014-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US20140273406A1

公开(公告)日：2014-09-18

申请号：US14248143

申请日：2014-04-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/677 ,  H01L21/306 ,  H01L21/263

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US20140199851A1

公开(公告)日：2014-07-17

申请号：US14153246

申请日：2014-01-13

Applicant: Applied Materials, Inc.

Inventor： Srinivas D. Nemani ,  Jeremiah T. Pender ,  Qingjun Zhou ,  Dmitry Lubomirsky ,  Sergey G. Belostotskiy

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/31111 ,  H01L21/32105

Abstract: Methods of patterning silicon nitride dielectric films are described. For example, a method of isotropically etching a dielectric film involves partially modifying exposed regions of a silicon nitride layer with an oxygen-based plasma process to provide a modified portion and an unmodified portion of the silicon nitride layer. The method also involves removing, selective to the unmodified portion, the modified portion of the silicon nitride layer with a second plasma process.

Abstract translation: 描述了图案化氮化硅介电膜的方法。 例如，各向同性蚀刻电介质膜的方法包括用氧基等离子体工艺部分地修饰氮化硅层的暴露区域，以提供氮化硅层的改性部分和未改性部分。 该方法还涉及通过第二等离子体处理来去除对未改性部分氮化硅层的改性部分的选择性。

公开(公告)号：US20140177123A1

公开(公告)日：2014-06-26

申请号：US13725449

申请日：2012-12-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Senh Thach ,  Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Konstantin Makhratchev

IPC: H01L21/683

CPC classification number: H01L21/67103 ,  H01L21/67109 ,  H01L21/6831 ,  Y10T29/49002

Abstract: An electrostatic chuck includes a thermally conductive base having a plurality of heating elements disposed therein. A metal layer covers at least a portion of the thermally conductive base, wherein the metal layer shields the plurality of heating elements from radio frequency (RF) coupling and functions as an electrode for the electrostatic chuck. A plasma resistant dielectric layer covers the metal layer.

Abstract translation: 静电卡盘包括其中布置有多个加热元件的导热基座。 金属层覆盖导热基体的至少一部分，其中金属层将多个加热元件与射频（RF）耦合屏蔽，并用作静电卡盘的电极。 等离子体电介质层覆盖金属层。

公开(公告)号：US20250022694A1

公开(公告)日：2025-01-16

申请号：US18762865

申请日：2024-07-03

Applicant: Applied Materials, Inc.

Inventor： Pranav Vijay Gadre ,  Adib M. Khan ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Hyun Joo Lee ,  Paneendra Prakash Bhat ,  Douglas A. Buchberger, JR. ,  Onkara Swamy Korasiddaramaiah ,  Vijay D. Parkhe ,  Junghoon Kim ,  Kallol Bera ,  Rupali Sahu ,  Sathya Swaroop Ganta

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  H05B6/54 ,  H05B6/62

Abstract: A substrate support assembly includes a heater plate including a dielectric material, a heater electrode embedded within the heater plate, a set of distributed purge channels formed within the heater plate, wherein the set of distributed purge channels provides a set of gas flow paths to equalize a gas flow from within the heater plate and direct the gas flow in a direction below the heater plate, a ground electrode embedded within the heater plate, and a radio frequency (RF) mesh embedded within the plate.

公开(公告)号：US20240234108A1

公开(公告)日：2024-07-11

申请号：US18403982

申请日：2024-01-04

Applicant: Applied Materials, Inc.

Inventor： Paneendra Prakash Bhat ,  Qiwei Liang ,  Douglas Buchberger ,  Dmitry Lubomirsky ,  Naveen Kumar Nagaraja ,  Vijay D. Parkhe

IPC: H01J37/32 ,  G03F7/00 ,  G03F7/38 ,  H01L21/683

CPC classification number: H01J37/32724 ,  G03F7/38 ,  G03F7/70708 ,  H01J37/32642 ,  H01L21/6833 ,  H01J2237/002 ,  H01J2237/2007

Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body defining a substrate support surface that defines a substrate seat. The electrostatic chuck body may define a backside gas lumen that extends through a surface of the substrate seat. The assemblies may include a bias electrode coupled with the electrostatic chuck body. The bias electrode may include a plurality of conductive mesas that protrude upward across the substrate seat. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include at least one chucking electrode embedded within the electrostatic chuck body. The assemblies may include at least one heater embedded within the electrostatic chuck body.

公开(公告)号：US11972930B2

公开(公告)日：2024-04-30

申请号：US17542781

申请日：2021-12-06

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Toan Tran ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32

CPC classification number: H01J37/32293 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/32229 ,  H01J37/32935 ,  H01J2237/334

Abstract: A plasma reactor has a cylindrical microwave cavity overlying a workpiece processing chamber, a microwave source having a pair of microwave source outputs, and a pair of respective waveguides. The cavity has first and second input ports in a sidewall and space apart by an azimuthal angle. Each of the waveguides has a microwave input end coupled to a microwave source output and a microwave output end coupled to a respective one of the first and second input ports, a coupling aperture plate at the output end with a rectangular coupling aperture in the coupling aperture plate, and an iris plate between the coupling aperture plate and the microwave input end with a rectangular iris opening in the iris plate.

公开(公告)号：US11728139B2

公开(公告)日：2023-08-15

申请号：US17219360

申请日：2021-03-31

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Soonam Park ,  Junghoon Kim ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/311

CPC classification number: H01J37/32357 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/311 ,  H01L21/67069 ,  H01L21/6831

Abstract: A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.

公开(公告)号：US20230125435A1

公开(公告)日：2023-04-27

申请号：US17512310

申请日：2021-10-27

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Alan V. Hayes ,  Dmitry Lubomirsky

IPC: H01J37/32

Abstract: An ion extraction assembly for an ion source is provided. The ion extraction assembly may include a plurality of electrodes, wherein the plurality of electrodes comprises: a plasma-facing electrode, arranged for coupling to a plasma chamber; and a substrate-facing electrode, disposed outside of the plasma-facing electrode. The at least one electrode of the plurality of electrodes may include a grid structure, defining a plurality of holes, wherein the at least one electrode has a non-uniform thickness, wherein a first grid thickness in a middle region of the at least one electrode is different than a second grid thickness, in an outer region of the at least one electrode.