公开(公告)号：US11787008B2

公开(公告)日：2023-10-17

申请号：US17127065

申请日：2020-12-18

Applicant: Applied Materials, Inc.

Inventor： Xingfeng Wang ,  Jianshe Tang ,  Feng Q. Liu ,  David M. Gage ,  Stephen Jew

IPC: B24B37/04 ,  B24B57/02 ,  B24B37/20 ,  B24B37/10

CPC classification number: B24B37/046 ,  B24B37/105 ,  B24B37/20 ,  B24B57/02

Abstract: A polishing station for polishing a substrate using a polishing slurry is disclosed. The polishing station includes a substrate carrier having a substrate-receiving surface and a rotatable platen having a polishing pad disposed on a platen surface, where the polishing pad has a polishing surface facing the substrate-receiving surface. The polishing station includes an electromagnetic assembly disposed over the platen surface. The electromagnetic assembly includes an array of electromagnetic devices that are each operable to generate a magnetic field that is configured to pass through the polishing surface. The magnetic fields generated by the array of electromagnetic devices are oriented and configured to induce an electromagnetic force on a plurality of charged particles disposed in a polishing slurry disposed on the polishing surface. The applied magnetic field is configured to induce movement of the plurality of charged particles in a direction parallel or orthogonal to the polishing surface.

公开(公告)号：US20230317516A1

公开(公告)日：2023-10-05

申请号：US17864552

申请日：2022-07-14

Applicant: Applied Materials, Inc.

Inventor： Muthukumar Kaliappan ,  Michael Haverty ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Aaron Dangerfield ,  Michael L. McSwiney ,  Feng Q. Liu ,  Xiangjin Xie

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L21/76831 ,  H01L21/76843 ,  H01L21/76879 ,  H01L23/5226

Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a metal-carbonyl containing precursor to form a self-assembled monolayer (SAM) on metallic surfaces.

公开(公告)号：US11760768B2

公开(公告)日：2023-09-19

申请号：US17236020

申请日：2021-04-21

Applicant: Applied Materials, Inc.

Inventor： Chandan Kr Barik ,  John Sudijono ,  Chandan Das ,  Doreen Wei Ying Yong ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Feng Q. Liu

IPC: C07F11/00 ,  C23C16/455 ,  C23C16/44 ,  C23C16/02 ,  C23C16/18 ,  C23C16/56

CPC classification number: C07F11/005 ,  C23C16/0272 ,  C23C16/18 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45553 ,  C23C16/56 ,  C23C16/0209 ,  C23C16/0227

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20230227975A1

公开(公告)日：2023-07-20

申请号：US17566026

申请日：2021-12-30

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Mark Saly ,  David Thompson ,  Annamalai Lakshmanan ,  Avgerinos V. Gelatos ,  Joung Joo Lee

IPC: C23C16/455 ,  C23C16/18 ,  C07F17/02 ,  C07F17/00

CPC classification number: C23C16/45553 ,  C07F17/00 ,  C07F17/02 ,  C23C16/18 ,  C23C16/45536

Abstract: Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RIx, where R is one or more of a C1-C10 alkyl, C3-C10 cycloalkyl, C2-C10 alkenyl, or C2-C10 alkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.

公开(公告)号：US20230025937A1

公开(公告)日：2023-01-26

申请号：US17955996

申请日：2022-09-29

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Wei V. Tang ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  David Thompson ,  Jacqueline S. Wrench ,  Naomi Yoshida

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/18 ,  H01L23/532 ,  C23C16/04

Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

公开(公告)号：US11488830B2

公开(公告)日：2022-11-01

申请号：US16549756

申请日：2019-08-23

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Wei V. Tang ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  David Thompson ,  Jacqueline S. Wrench ,  Naomi Yoshida

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/18 ,  H01L23/532 ,  C23C16/04

Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

公开(公告)号：US20220076960A1

公开(公告)日：2022-03-10

申请号：US17014251

申请日：2020-09-08

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Lisa J. Enman ,  Lakmal C. Kalutarage ,  Mark J. Saly

IPC: H01L21/311 ,  H01L21/02

Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include selectively etching gallium oxide relative to gallium nitride. The method may include flowing a reagent in a substrate processing region housing the semiconductor substrate. The reagent may include at least one of chloride and bromide. The method may further include contacting an exposed region of gallium oxide with the at least one of chloride and bromide from the reagent to form a gallium-containing gas. The gallium-containing gas may be removed by purging the substrate processing region with an inert gas. The method includes recessing a surface of the gallium oxide. The method may include repeated cycles to achieve a desired depth.

公开(公告)号：US10892186B2

公开(公告)日：2021-01-12

申请号：US16159128

申请日：2018-10-12

Applicant: Applied Materials, Inc.

Inventor： Ben-Li Sheu ,  Feng Q. Liu ,  Tae Hong Ha ,  Mei Chang ,  Shirish Pethe

IPC: H01L21/768 ,  C23C16/34 ,  C23C16/455 ,  C23C16/44 ,  C23C14/34 ,  C23C16/04 ,  C23C14/04 ,  C23C14/02 ,  C23C16/18 ,  C23C14/14

Abstract: Methods and apparatus to fill a feature with a seamless gapfill of copper are described. A copper gapfill seed layer is deposited on a substrate surface by atomic layer deposition followed by a copper deposition by physical vapor deposition to fill the gap with copper.

公开(公告)号：US10724135B2

公开(公告)日：2020-07-28

申请号：US15909352

申请日：2018-03-01

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Mei Chang ,  David Thompson

IPC: C23C16/455 ,  C23C16/18 ,  C23C16/02 ,  C23C16/04 ,  H01L21/768 ,  H01L21/285 ,  C23C16/458

Abstract: Methods of depositing a metal selectively onto a metal surface relative to a dielectric surface are described. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon and exposing the substrate to a metal precursor and an alcohol to deposit a film.

公开(公告)号：US20200090924A1

公开(公告)日：2020-03-19

申请号：US16131931

申请日：2018-09-14

Applicant: Applied Materials, Inc.

Inventor： Liqi Wu ,  Hung Nguyen ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Feng Q. Liu ,  David Thompson

IPC: H01L21/02 ,  C23C16/04

Abstract: Methods of depositing films are described. Specifically, methods of depositing metal oxide films are described. A metal oxide film is selectively deposited on a metal layer relative to a dielectric layer by exposing a substrate to an organometallic precursor followed by exposure to an oxidant.