公开(公告)号：US10563304B2

公开(公告)日：2020-02-18

申请号：US15482198

申请日：2017-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin Xie ,  Adolph Miller Allen ,  Xianmin Tang ,  Goichi Yoshidome

IPC: H01L21/3215 ,  H01L21/768 ,  C23C14/34 ,  H01L21/321 ,  C23C14/54 ,  H01L21/683 ,  H01L21/285 ,  C23C16/455 ,  C23C14/58 ,  C23C14/22 ,  C23C16/02 ,  C23C14/56 ,  C23C16/56 ,  H01J37/32 ,  C23C14/02 ,  H01L23/532 ,  H01J37/34 ,  H01J3/34

Abstract: Atomic layer deposition (ALD) processes are combined with physical vapor deposition (PVD) processes in a low pressure environment to produce a high quality barrier film. The initial barrier film is deposited on a substrate using ALD processes and then moved to a PVD chamber to treat the barrier film to increase the barrier film's density and purity, decreasing the barrier film's resistivity. A dual source of materials is sputtered onto the substrate to provide doping while a gas is simultaneously used to etch the substrate to release nitrogen. At least one source of material is positioned to provide doping at an acute angle to the surface of the substrate while supplied with DC power and RF power at a first RF power frequency. The substrate is biased using RF power at a second RF power frequency.

公开(公告)号：US20190385908A1

公开(公告)日：2019-12-19

申请号：US16442941

申请日：2019-06-17

Applicant: Applied Materials, Inc.

Inventor： Xiangjin Xie ,  Rui Li ,  Goichi Yoshidome ,  Adolph M. Allen ,  Xianmin Tang

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/3205

Abstract: Methods of treating a film on a substrate in a PVD chamber are described. The methods include biasing the substrate with an RF power to provide a biased substrate, etching the film on the biased substrate with at least one gas, and sputtering first and second sources of cobalt onto the film on the biased substrate to form a doped film. Some embodiments advantageously provide doped films as liners or barrier layers. Some embodiments provide for the deposition of bulk materials on the doped films. Some embodiments advantageously minimize the thickness of the individual layers.

公开(公告)号：US10431440B2

公开(公告)日：2019-10-01

申请号：US14975793

申请日：2015-12-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Rongjun Wang ,  Anantha K. Subramani ,  Chi Hong Ching ,  Xianmin Tang

IPC: H01J37/34 ,  C23C14/34 ,  H01J37/32 ,  C23C14/08 ,  H01L21/02

Abstract: Methods and apparatus for processing a substrate are disclosed herein. In some embodiments, a process chamber includes: a chamber body defining an interior volume; a substrate support to support a substrate within the interior volume; a plurality of cathodes coupled to the chamber body and having a corresponding plurality of targets to be sputtered onto the substrate; and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered and at least one pocket disposed in a backside of the shield to accommodate and cover at least another one of the plurality of targets not to be sputtered, wherein the shield is configured to rotate about and linearly move along a central axis of the process chamber.

公开(公告)号：US10157787B2

公开(公告)日：2018-12-18

申请号：US15384219

申请日：2016-12-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Jin Hee Park ,  Tae Hong Ha ,  Sang-Hyeob Lee ,  Thomas Jongwan Kwon ,  Jaesoo Ahn ,  Xianmin Tang ,  Er-Xuan Ping ,  Sree Kesapragada

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/48 ,  C23C16/455 ,  C23C16/04 ,  C23C16/16 ,  C23C16/18 ,  C23C16/56 ,  H01L21/67 ,  H01L23/532 ,  H01L27/11556 ,  H01L27/11582

Abstract: Methods and apparatus for depositing a cobalt layer in a feature, such as, a word line formed in a substrate, are provided herein. In some embodiments, method of processing a substrate includes: exposing a substrate at a first temperature to a cobalt containing precursor to deposit a cobalt layer within a word line feature formed in the substrate, wherein the word line feature is part of a 3D NAND device; and annealing the substrate to remove contaminants from the cobalt layer and to reflow the cobalt layer into the word line feature, wherein the substrate is at a second temperature greater than the first temperature during the annealing.

公开(公告)号：US10096725B2

公开(公告)日：2018-10-09

申请号：US14531549

申请日：2014-11-03

Applicant: Applied Materials, Inc.

Inventor： Yong Cao ,  Daniel Lee Diehl ,  Rongjun Wang ,  Xianmin Tang ,  Tai-chou Papo Chen ,  Tingjun Xu

IPC: C23C14/35 ,  H01L31/0216 ,  H01L31/18 ,  G02B1/115 ,  C23C14/00 ,  C23C14/06

Abstract: A method for forming an anti-reflective coating (ARC) includes positioning a substrate below a target and flowing a first gas to deposit a first portion of the graded ARC onto the substrate. The method includes gradually flowing a second gas to deposit a second portion of the graded ARC, and gradually flowing a third gas while simultaneously gradually decreasing the flow of the second gas to deposit a third portion of the graded ARC. The method also includes flowing the third gas after stopping the flow of the second gas to form a fourth portion of the graded ARC. In another embodiment a film stack having a substrate having a graded ARC disposed thereon is provided. The graded ARC includes a first portion, a second portion disposed on the first portion, a third portion disposed on the second portion, and a fourth portion disposed on the third portion.

公开(公告)号：US09812328B2

公开(公告)日：2017-11-07

申请号：US15189768

申请日：2016-06-22

Applicant: Applied Materials, Inc.

Inventor： Kaushal K. Singh ,  Er-Xuan Ping ,  Xianmin Tang ,  Sundar Ramamurthy ,  Randhir Thakur

IPC: H01L21/4763 ,  H01L21/285 ,  H01L23/485 ,  H01L23/532

CPC classification number: H01L21/28518 ,  H01L23/485 ,  H01L23/53209 ,  H01L23/53219

Abstract: Embodiments described herein generally relate to methods for forming silicide materials. Silicide materials formed according to the embodiments described herein may be utilized as contact and/or interconnect structures and may provide advantages over conventional silicide formation methods. In one embodiment, a one or more transition metal and aluminum layers may be deposited on a silicon containing substrate and a transition metal layer may be deposited on the one or more transition metal and aluminum layers. An annealing process may be performed to form a metal silicide material.

公开(公告)号：US09499901B2

公开(公告)日：2016-11-22

申请号：US13750318

申请日：2013-01-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Yong Cao ,  Xianmin Tang ,  Adolph Miller Allen ,  Tza-Jing Gung

IPC: C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34

CPC classification number: C23C14/345 ,  C23C14/351 ,  C23C14/54 ,  H01J37/34

Abstract: Methods for depositing a layer on a substrate are provided herein. In some embodiments, a method of depositing a metal-containing layer on a substrate in a physical vapor deposition (PVD) chamber may include applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying DC power to the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the potential on the substrate to be the same polarity as the ionized metal atoms to deposit a metal-containing layer on the substrate.

Abstract translation: 本文提供了在基板上沉积层的方法。 在一些实施例中，在物理气相沉积（PVD）室中在衬底上沉积含金属层的方法可以包括以VHF频率将RF功率施加到包括设置在衬底上方的PVD室中的金属的靶，以形成 来自等离子体形成气体的等离子体; 可选地向目标施加DC电力; 使用等离子体从靶中溅射金属原子，同时保持PVD室中的第一压力足以离子化主要部分的溅射金属原子; 并且将基板上的电位控制为与电离金属原子相同的极性，以在基板上沉积含金属层。

公开(公告)号：US09373485B2

公开(公告)日：2016-06-21

申请号：US14618416

申请日：2015-02-10

Applicant: Applied Materials, Inc.

Inventor： John C. Forster ,  Xianmin Tang

IPC: B23K31/02 ,  H01J37/34 ,  C23C14/34 ,  B23K1/00

CPC classification number: H01J37/3491 ,  B23K1/0008 ,  B23K31/02 ,  C23C14/3407 ,  H01J37/3435 ,  H01J37/3441 ,  H01J2237/332 ,  Y10T29/49826 ,  Y10T29/49947

Abstract: Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers having an improved darkspace gap are also disclosed. Disclosed is a target assembly having a substantially coplanar backing plate and a target are vertically spaced from the darkspace shield.

公开(公告)号：US09281167B2

公开(公告)日：2016-03-08

申请号：US13777010

申请日：2013-02-26

Applicant: Applied Materials, Inc.

Inventor： Thanh X Nguyen ,  Rongjun Wang ,  Muhammad M Rasheed ,  Xianmin Tang

IPC: C23C14/35 ,  H01J37/34 ,  H01J37/32 ,  C23C14/56

CPC classification number: H01J37/3408 ,  C23C14/35 ,  C23C14/564 ,  H01J37/3288 ,  H01J37/3405 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3476

Abstract: A dual magnetron particularly useful for RF plasma sputtering includes a radially stationary open-loop magnetron comprising opposed magnetic poles and rotating about a central axis to scan an outer region of a sputter target and a radially movable open-loop magnetron comprising opposed magnetic poles and rotating together with the stationary magnetron. During processing, the movable magnetron is radially positioned in the outer region with an open end abutting an open end of the stationary magnetron to form a single open-loop magnetron. During cleaning, part of the movable magnetron is moved radially inwardly to scan and clean an inner region of the target not scanned by the stationary magnetron. The movable magnetron can be mounted on an arm pivoting about an axis at periphery of a rotating disk-shaped plate mounting the stationary magnetron so the arm centrifugally moves between radial positions dependent upon the rotation rate or direction.

Abstract translation: 特别适用于RF等离子体溅射的双重磁控管包括径向固定的开环磁控管，其包括相对的磁极并围绕中心轴线旋转以扫描溅射靶的外部区域和包括相对的磁极的可径向移动的开环磁控管 连同固定磁控管。 在处理过程中，可移动磁控管径向定位在外部区域中，开口端与固定磁控管的开口端相接触以形成单个开环磁控管。 在清洁期间，可移动磁控管的一部分径向向内移动以扫描和清洁未被固定磁控管扫描的目标的内部区域。 可移动磁控管可以安装在围绕安装固定磁控管的旋转盘形板的周边处的轴线枢转的臂上，使得臂根据旋转速率或方向离心地在径向位置之间移动。

公开(公告)号：US20250132165A1

公开(公告)日：2025-04-24

申请号：US18382326

申请日：2023-10-20

Applicant: Applied Materials, Inc.

Inventor： Jiajie Cen ,  Feng Q. Liu ,  Zheng Ju ,  Zhiyuan Wu ,  Kevin Kashefi ,  Mark Saly ,  Xianmin Tang

IPC: H01L21/311

Abstract: Methods of removing molybdenum oxide from a surface of a substrate comprise exposing the substrate having a molybdenum oxide layer on the substrate to a halide etchant having the formula RmSiX4-m, wherein m is an integer from 1 to 3, X is selected from iodine (I) and bromine (Br) and R is selected from the group consisting of a methyl group, ethyl group, propyl group, butyl group, cyclohexyl group and cyclopentyl group. The methods may be performed in a back-end-of-the line (BEOL) process, and the substrate contains a low-k dielectric material.