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    Non-volatile memory device and method of manufacturing the same
    51.
    发明授权
    Non-volatile memory device and method of manufacturing the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US08357992B2

    公开(公告)日：2013-01-22

    申请号：US12659516

    申请日：2010-03-11

    Applicant: Ho-jung Kim ,  In-kyeong Yoo ,  Chang-jung Kim ,  Ki-ha Hong

    Inventor： Ho-jung Kim ,  In-kyeong Yoo ,  Chang-jung Kim ,  Ki-ha Hong

    IPC: H01L23/52 ,  H01L29/00

    CPC classification number: H01L27/222 ,  G11C13/0002 ,  G11C2213/71 ,  G11C2213/73 ,  G11C2213/79 ,  H01L27/24

    Abstract: The non-volatile memory device may include a substrate, a plurality of first signal lines on the substrate in a vertical direction, a plurality of memory cells having ends connected to the plurality of first signal lines, a plurality of second signal lines perpendicular to the plurality of first signal lines on the substrate and each connected to other ends of the plurality of memory cells, and a plurality of selection elements on the substrate and connected to at least two of the plurality of first signal lines.

    Abstract translation: 非易失性存储器件可以包括衬底，在垂直方向上的衬底上的多个第一信号线，具有连接到多个第一信号线的端部的多个存储器单元，垂直于第一信号线的多个第二信号线 基板上的多个第一信号线，并且各自连接到多个存储单元的另一端，以及多个选择元件，并且连接到多个第一信号线中的至少两个。

    Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same
    54.
    发明授权
    Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same 有权
    包括缺氧金属氧化物层的非易失性存储器件及其制造方法

    公开(公告)号：US07842991B2

    公开(公告)日：2010-11-30

    申请号：US11798703

    申请日：2007-05-16

    Applicant: Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

    Inventor： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

    IPC: H01L27/108

    CPC classification number: H01L27/115 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/51 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

    Abstract: A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.

    Abstract translation: 非易失性存储器件包括至少一个开关器件和至少一个电连接到该至少一个开关器件的存储节点。 所述至少一个存储节点包括下电极，一个或多个缺氧金属氧化物层，一个或多个数据存储层和上电极。 一个或多个金属氧化物层中的至少一个电连接到下电极。 所述一个或多个数据存储层中的至少一个电连接到所述一个或多个金属氧化物层中的至少一个。 上电极电连接到一个或多个数据存储层中的至少一个。 制造非易失性存储器件的方法包括制备至少一个开关器件并形成下电极，一个或多个金属氧化物层，一个或多个数据存储层和上电极。

    Electronic device and method of manufacturing the same
    56.
    发明授权
    Electronic device and method of manufacturing the same 有权
    电子设备及其制造方法

    公开(公告)号：US07482648B2

    公开(公告)日：2009-01-27

    申请号：US11024469

    申请日：2004-12-30

    Applicant: Wenxu Xianyu ,  Takashi Noguchi ,  In-kyeong Yoo ,  Young-soo Park

    Inventor： Wenxu Xianyu ,  Takashi Noguchi ,  In-kyeong Yoo ,  Young-soo Park

    IPC: H01L31/119

    CPC classification number: H01L27/11507 ,  H01L21/84 ,  H01L27/11502 ,  H01L27/12

    Abstract: In an electronic device, and a method of manufacturing the same, the electronic device includes a first substrate, a first lower capacitor on the first substrate, a first lower switching element on the first lower capacitor, and a second substrate on the first lower switching element. The electronic device may further include a second lower switching element which is isolated from the first lower capacitor, and an upper capacitor on the second substrate, the lower electrode of the upper capacitor being connected to the second lower switching element.

    Abstract translation: 在电子设备及其制造方法中，电子设备包括第一基板，第一基板上的第一下部电容器，第一下部电容器上的第一下部开关元件，以及第一下部开关 元件。 电子设备还可以包括与第一下电容器隔离的第二下开关元件和第二基板上的上电容器，上电容器的下电极连接到第二下开关元件。

    Magnetic domain data storage devices and methods of operating the same
    58.
    发明申请
    Magnetic domain data storage devices and methods of operating the same 有权
    磁畴数据存储设备及其操作方法

    公开(公告)号：US20080138659A1

    公开(公告)日：2008-06-12

    申请号：US11980418

    申请日：2007-10-31

    Applicant: Chee-kheng Lim ,  In-kyeong Yoo ,  Sung-hoon Choa

    Inventor： Chee-kheng Lim ,  In-kyeong Yoo ,  Sung-hoon Choa

    IPC: G11B5/127 ,  G11B21/02

    CPC classification number: G11C11/14 ,  G11C19/0808 ,  G11C19/0841 ,  G11C21/00 ,  Y10T428/11

    Abstract: Example embodiments may provide data storage devices using movement of a magnetic domain wall and/or a method of operating magnetic domain data storage devices. The data storage device may include a first magnetic layer for writing data having two magnetic domains magnetized in different directions, a second magnetic layer for storing data at a side of the first magnetic layer, a data recording device connected to the first magnetic layer and the second magnetic layer, and a plurality of reading heads configured to read the second magnetic layer. The data storage device may store a larger amount of data without requiring moving mechanical systems.

    Abstract translation: 示例性实施例可以使用磁畴壁的移动和/或操作磁畴数据存储设备的方法来提供数据存储设备。 数据存储装置可以包括用于写入具有不同方向磁化的两个磁畴的数据的第一磁性层，用于在第一磁性层的一侧存储数据的第二磁性层，连接到第一磁性层的数据记录装置和 第二磁性层和被配置为读取第二磁性层的多个读取头。 数据存储设备可以存储更大量的数据，而不需要移动机械系统。

    Method of fabricating memory device utilizing carbon nanotubes
    59.
    发明授权
    Method of fabricating memory device utilizing carbon nanotubes 失效
    使用碳纳米管制造记忆装置的方法

    公开(公告)号：US07378328B2

    公开(公告)日：2008-05-27

    申请号：US11352310

    申请日：2006-02-13

    Applicant: Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

    Inventor： Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

    IPC: H01L21/20

    CPC classification number: B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  Y10S977/943

    Abstract: A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.

    Abstract translation: 一种由碳纳米管存储器件及其形成方法形成的快速，可靠，高度集成的存储器件，其中碳纳米管存储器件包括衬底，源电极，漏电极，具有高电的碳纳米管和 热导率，具有优异电荷存储能力的存储单元和栅电极。 源电极和漏电极在它们之间以预定间隔布置在衬底上并经受电压。 碳纳米管将源电极连接到漏电极并用作电荷运动的通道。 存储单元位于碳纳米管之上，并存储来自碳纳米管的电荷。 栅电极形成为与存储单元的上表面接触，并控制从碳纳米管流入存储单元的电荷量。

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