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    Method for manufacturing semiconductor light-emitting device and semiconductor light emitting device
    52.
    发明授权
    Method for manufacturing semiconductor light-emitting device and semiconductor light emitting device 有权
    半导体发光元件及半导体发光元件的制造方法

    公开(公告)号：US08367523B2

    公开(公告)日：2013-02-05

    申请号：US12726452

    申请日：2010-03-18

    申请人： Yoshiaki Sugizaki ,  Akihiro Kojima ,  Masanobu Ando ,  Kazuyoshi Furukawa

    发明人： Yoshiaki Sugizaki ,  Akihiro Kojima ,  Masanobu Ando ,  Kazuyoshi Furukawa

    IPC分类号： H01L21/46 ,  H01L21/00

    CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0066 ,  H01L2924/00

    摘要： A method for manufacturing a semiconductor light-emitting device of the invention includes: forming a semiconductor layer including a light-emitting layer and a first interconnect layer on a major surface of a temporary substrate; dividing the semiconductor layer and the first interconnect layer into a plurality of chips by a trench; collectively bonding each divided portion of the first interconnect layer of a plurality of chips to be bonded not adjacent to each other out of the plurality of chips on the temporary substrate to a second interconnect layer while opposing the major surface of the temporary substrate and the major surface of a supporting substrate forming the second interconnect layer, and collectively transferring a plurality of the bonded chips from the temporary substrate to the supporting substrate after irradiating interfaces between the bonded chips and the temporary substrate and separating the chips and the temporary substrate from each other.

    摘要翻译： 本发明的半导体发光元件的制造方法包括：在临时衬底的主表面上形成包括发光层和第一互连层的半导体层; 通过沟槽将半导体层和第一互连层分成多个芯片; 将临时衬底上的多个芯片中彼此不相邻的多个芯片的每个分割部分的每个分割部分连接到第二互连层，同时与临时衬底的主表面和主要衬底相对 形成第二互连层的支撑基板的表面，并且在照射接合芯片和临时基板之间的界面照射之后，将多个粘合芯片从临时基板共同转印到支撑基板，并将芯片和临时基板彼此分离 。

    Semiconductor light-emitting device and method for manufacturing same
    54.
    发明授权
    Semiconductor light-emitting device and method for manufacturing same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US08288843B2

    公开(公告)日：2012-10-16

    申请号：US12728846

    申请日：2010-03-22

    申请人： Akihiro Kojima ,  Yoshiaki Sugizaki

    发明人： Akihiro Kojima ,  Yoshiaki Sugizaki

    IPC分类号： H01L23/544

    CPC分类号： H01L33/507 ,  H01L24/10 ,  H01L24/94 ,  H01L24/95 ,  H01L24/96 ,  H01L24/97 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/387 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/16 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2933/0041 ,  H01L2924/00

    摘要： A semiconductor light-emitting device includes: a first semiconductor layer having a first major surface, a second major surface which is an opposite side from the first major surface, and a side surface; a second semiconductor layer provided on the second major surface of the first semiconductor layer and including a light-emitting layer; electrodes provided on the second major surface of the first semiconductor layer and on a surface of the second semiconductor layer on an opposite side from the first semiconductor layer; an insulating layer having a first surface formed on the second major surface side of the first semiconductor layer and a second surface which is an opposite side from the first surface; an external terminal which is a conductor provided on the second surface side of the insulating layer; and a phosphor layer provided on the first major surface of the first semiconductor layer and on a portion of the first surface of the insulating layer, the portion being adjacent to the side surface of the first semiconductor layer.

    摘要翻译： 一种半导体发光器件，包括：具有第一主表面的第一半导体层，与第一主表面相对的第二主表面和侧表面; 第二半导体层，设置在第一半导体层的第二主表面上并且包括发光层; 设置在第一半导体层的第二主表面上的第二半导体层的与第一半导体层相反一侧的表面上的电极; 绝缘层，其具有形成在所述第一半导体层的所述第二主表面侧上的第一表面和与所述第一表面相反的第二表面; 外部端子，其是设置在绝缘层的第二表面侧上的导体; 以及设置在所述第一半导体层的所述第一主表面上和所述绝缘层的所述第一表面的一部分上的磷光体层，所述部分与所述第一半导体层的侧表面相邻。

    Semiconductor light emitting device and method for manufacturing same
    55.
    发明授权
    Semiconductor light emitting device and method for manufacturing same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US08174027B2

    公开(公告)日：2012-05-08

    申请号：US12575778

    申请日：2009-10-08

    申请人： Akihiro Kojima ,  Yoshiaki Sugizaki

    发明人： Akihiro Kojima ,  Yoshiaki Sugizaki

    IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L23/04

    CPC分类号： H01L33/486 ,  H01L33/44 ,  H01L33/505 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor light emitting device, includes: a substrate including a first major surface and a second major surface, the first major surface including a recess and a protrusion, the second major surface being formed on a side opposite to the first major surface; a first electrode provided on the first major surface; a semiconductor light emitting element provided on the first electrode and electrically connected to the first electrode; a second electrode provided on the second major surface; and a through-electrode provided to pass through the substrate at the recess and electrically connect the first electrode and the second electrode.

    摘要翻译： 一种半导体发光器件，包括：包括第一主表面和第二主表面的基板，所述第一主表面包括凹部和突起，所述第二主表面形成在与所述第一主表面相对的一侧上; 设置在所述第一主表面上的第一电极; 半导体发光元件，设置在所述第一电极上并电连接到所述第一电极; 设置在所述第二主表面上的第二电极; 以及设置成在所述凹部处穿过所述基板并且电连接所述第一电极和所述第二电极的贯通电极。

    LIGHT EMITTING DEVICE
    56.
    发明申请
    LIGHT EMITTING DEVICE 失效
    发光装置

    公开(公告)号：US20110291149A1

    公开(公告)日：2011-12-01

    申请号：US12885721

    申请日：2010-09-20

    申请人： Yoshiaki Sugizaki ,  Hideki Shibata ,  Akihiro Kojima ,  Masayuki Ishikawa ,  Hideo Tamura ,  Tetsuro Komatsu

    发明人： Yoshiaki Sugizaki ,  Hideki Shibata ,  Akihiro Kojima ,  Masayuki Ishikawa ,  Hideo Tamura ,  Tetsuro Komatsu

    IPC分类号： H01L33/48

    CPC分类号： H01L33/647 ,  H01L27/153 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0066

    摘要： According to one embodiment, a light emitting device includes a light emitting chip, an external terminal made of a metal material, and a circuit board. The light emitting chip is mounted on the circuit board via the external terminal. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar and a resin layer. The circuit board includes an interconnection bonded to the first metal pillar and the second metal pillar via the external terminal, and a heat radiation material provided on an opposite side of the interconnection and connected to the interconnection.

    摘要翻译： 根据一个实施例，发光器件包括发光芯片，由金属材料制成的外部端子和电路板。 发光芯片通过外部端子安装在电路板上。 发光芯片包括半导体层，第一电极，第二电极，绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和树脂层。 电路板包括经由外部端子与第一金属柱和第二金属柱接合的互连以及设置在互连的相对侧并连接到互连的散热材料。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    57.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20110220910A1

    公开(公告)日：2011-09-15

    申请号：US12793943

    申请日：2010-06-04

    申请人： Akihiro Kojima ,  Yoshiaki Sugizaki

    发明人： Akihiro Kojima ,  Yoshiaki Sugizaki

    IPC分类号： H01L33/30 ,  H01L33/36 ,  H01L33/44 ,  H01L21/78 ,  H01L33/48

    CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/40 ,  H01L33/44 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/16

    摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a barrier metal layer, a first metal pillar, a second metal pillar, and a resin. The semiconductor layer has a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer. The first electrode is provided on the second major surface of the semiconductor layer. The second electrode is provided on the second major surface of the semiconductor layer and includes a silver layer. The insulating film is provided on the second major surface side of the semiconductor layer. The barrier metal layer is provided between the second electrode and the insulating film and between the second electrode and the second interconnection to cover the second electrode.

    摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，绝缘膜，第一互连，第二互连，阻挡金属层，第一金属柱，第二金属柱， 和树脂。 半导体层具有第一主表面，与第一主表面相反的一侧形成的第二主表面和发光层。 第一电极设置在半导体层的第二主表面上。 第二电极设置在半导体层的第二主表面上并且包括银层。 绝缘膜设置在半导体层的第二主表面侧。 阻挡金属层设置在第二电极和绝缘膜之间以及第二电极和第二互连之间以覆盖第二电极。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    58.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20110114978A1

    公开(公告)日：2011-05-19

    申请号：US12728846

    申请日：2010-03-22

    申请人： Akihiro Kojima ,  Yoshiaki Sugizaki

    发明人： Akihiro Kojima ,  Yoshiaki Sugizaki

    IPC分类号： H01L33/40 ,  H01L31/0256

    CPC分类号： H01L33/507 ,  H01L24/10 ,  H01L24/94 ,  H01L24/95 ,  H01L24/96 ,  H01L24/97 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/387 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/16 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2933/0041 ,  H01L2924/00

    摘要： A semiconductor light-emitting device includes: a first semiconductor layer having a first major surface, a second major surface which is an opposite side from the first major surface, and a side surface; a second semiconductor layer provided on the second major surface of the first semiconductor layer and including a light-emitting layer; electrodes provided on the second major surface of the first semiconductor layer and on a surface of the second semiconductor layer on an opposite side from the first semiconductor layer; an insulating layer having a first surface formed on the second major surface side of the first semiconductor layer and a second surface which is an opposite side from the first surface; an external terminal which is a conductor provided on the second surface side of the insulating layer; and a phosphor layer provided on the first major surface of the first semiconductor layer and on a portion of the first surface of the insulating layer, the portion being adjacent to the side surface of the first semiconductor layer.

    摘要翻译： 一种半导体发光器件，包括：具有第一主表面的第一半导体层，与第一主表面相对的第二主表面和侧表面; 第二半导体层，设置在第一半导体层的第二主表面上并且包括发光层; 设置在第一半导体层的第二主表面上的第二半导体层的与第一半导体层相反一侧的表面上的电极; 绝缘层，其具有形成在所述第一半导体层的所述第二主表面侧上的第一表面和与所述第一表面相反的第二表面; 外部端子，其是设置在绝缘层的第二表面侧上的导体; 以及设置在所述第一半导体层的所述第一主表面上和所述绝缘层的所述第一表面的一部分上的磷光体层，所述部分与所述第一半导体层的侧表面相邻。

    Semiconductor light emitting device and method for manufacturing same
    60.
    发明授权
    Semiconductor light emitting device and method for manufacturing same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US08436378B2

    公开(公告)日：2013-05-07

    申请号：US12817592

    申请日：2010-06-17

    申请人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Hideki Shibata ,  Hideo Tamura ,  Tetsuro Komatsu ,  Masayuki Ishikawa

    发明人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Hideki Shibata ,  Hideo Tamura ,  Tetsuro Komatsu ,  Masayuki Ishikawa

    IPC分类号： H01L33/00

    CPC分类号： H01L33/486 ,  H01L33/50 ,  H01L33/504 ,  H01L2224/16

    摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a first metal pillar, a second metal pillar, a resin, and a fluorescent layer. The semiconductor layer has a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer. The first electrode and the second electrode are provided on the second major surface of the semiconductor layer. The fluorescent layer faces to the first major surface of the semiconductor layer and includes a plurality of kinds of fluorescent materials having different peak wavelengths of emission light.

    摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，绝缘膜，第一互连，第二互连，第一金属柱，第二金属柱，树脂和 荧光层。 半导体层具有第一主表面，与第一主表面相反的一侧形成的第二主表面和发光层。 第一电极和第二电极设置在半导体层的第二主表面上。 荧光层面向半导体层的第一主表面，并且包括发射光的不同峰值波长的多种荧光材料。