公开(公告)号：US5148027A

公开(公告)日：1992-09-15

申请号：US654299

申请日：1991-02-12

申请人： Kaoru Umemura ,  Hiroyasu Schichi ,  Tohru Ishitani

发明人： Kaoru Umemura ,  Hiroyasu Schichi ,  Tohru Ishitani

IPC分类号： G01N27/62 ,  G01N23/22 ,  G01Q60/44 ,  G01R31/302 ,  G01R31/305 ,  H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J37/252 ,  H01J49/14 ,  H01J49/16

CPC分类号： H01J49/142 ,  G01R31/302 ,  G01R31/305 ,  H01J27/22 ,  H01J37/08

摘要： Cs LMIS with pure Cs or a cesium compound as a source material is specifically employed in a FIB so that the total ion current I.sub.T at the time of ion emission is not greater than 5 .mu.A, whereby the current density distribution of a Cs FIB exhibits a sharp peak and the tailing of the distribution is reduced. By setting the I.sub.T in the range of 0.1 to 2 .mu.A, a high current density of a Cs.sup.+ FIB whose diameter is 0.1 .mu.m is formed. The FIB is particularly used in secondary ion mass spectrometry analysis of a semiconductor material in electronic device manufacturing.

摘要翻译： 具有纯Cs或铯化合物的Cs LMIS作为源材料被特别用于FIB中，使得离子发射时的总离子流量IT不大于5μA，由此CsFBB的电流密度分布表现出 一个尖峰和分布的拖尾减少。 通过将IT设定在0.1〜2μA的范围内，形成直径为0.1μm的Cs + FIB的高电流密度。 FIB特别用于电子器件制造中半导体材料的二次离子质谱分析。

公开(公告)号：US4567398A

公开(公告)日：1986-01-28

申请号：US474473

申请日：1983-03-11

申请人： Tohru Ishitani ,  Hifumi Tamura ,  Akira Shimase

发明人： Tohru Ishitani ,  Hifumi Tamura ,  Akira Shimase

IPC分类号： H01J37/08 ,  H01J3/04 ,  H01J27/26 ,  H05H1/00 ,  H01J1/02

CPC分类号： H01J27/26

摘要： A liquid metal ion source according to the present invention has a needle electrode disposed at a position spaced from a reservoir for holding a source material, and is provided with means for freely varying a distance from the reservoir to the fore end of the needle electrode.

摘要翻译： 根据本发明的液体金属离子源具有设置在与用于保持源材料的储存器间隔开的位置处的针电极，并且设置有用于自由地改变从储存器到针电极的前端的距离的装置。

公开(公告)号：US4233509A

公开(公告)日：1980-11-11

申请号：US8258

申请日：1979-02-01

申请人： Hifumi Tamura ,  Tohru Ishitani

发明人： Hifumi Tamura ,  Tohru Ishitani

IPC分类号： G01N23/225 ,  H01J37/252 ,  H01J37/295

CPC分类号： H01J37/252 ,  H01J37/295

摘要： An ion-electron analyzer consists of an ion microprobe analyzer and an electron diffractometer which are accommodated in a single housing, an ion gun extracts an electron beam and a negative ion beam simultaneously from the same source of charged particles and simultaneously bombards these beams onto a selected location on the surface of a specimen.

摘要翻译： 离子电子分析仪由离子微探针分析仪和电子衍射仪组成，它们容纳在单个外壳中，离子枪同时从相同的带电粒子源中提取电子束和负离子束，同时将这些光束轰击到 在样品表面上的选定位置。

公开(公告)号：US07897936B2

公开(公告)日：2011-03-01

申请号：US11822386

申请日：2007-07-05

申请人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

发明人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

IPC分类号： G21K1/00

CPC分类号： G01N23/20 ,  B23K15/0006 ,  B23K15/0013 ,  G01N1/286 ,  H01J2237/3114 ,  H01J2237/31745

摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

摘要翻译： 相对于样品表面以小于90度的入射角照射具有聚焦离子束的样品的样品制造方法，消除作为目标的微量样品的周边区域，将样品台围绕线段 垂直于样品表面作为转动轴线，同时在样品表面上的入射角被固定的同时用聚焦离子束照射样品，并分离微量样品或制备待分离的微量样品。 一种样品制造装置，用于通过扫描和偏转离子束来形成保持在样品台上的样品中的样品部分，其中离子束的光轴与样品台的表面之间的角度被固定并形成样品 通过转动样品台来控制切片。

公开(公告)号：US07411192B2

公开(公告)日：2008-08-12

申请号：US11189901

申请日：2005-07-27

申请人： Koichiro Takeuchi ,  Tohru Ishitani ,  Yoichi Ose

发明人： Koichiro Takeuchi ,  Tohru Ishitani ,  Yoichi Ose

IPC分类号： H01J1/50 ,  H01J37/08 ,  G21K7/00 ,  G21K1/093

CPC分类号： H01J37/09 ,  H01J37/3056 ,  H01J2237/0264 ,  H01J2237/31749

摘要： A focused ion beam apparatus and a focused ion beam irradiation method are disclosed. Even in the case where a magnetic field exists on the optical axis of an ion beam and the particular magnetic field undergoes a change, the ion beam is focused without separating the isotopes on the sample at the same ion beam spot position as if the magnetic field is not existent. A canceling magnetic field is generated on the optical axis of the ion beam from a canceling magnetic field generator thereby to offset the deflection of the ion beam due to the external magnetic field.

摘要翻译： 公开了一种聚焦离子束装置和聚焦离子束照射方法。 即使在离子束的光轴上存在磁场并且特定的磁场发生变化的情况下，也可以将离子束聚焦，而不会在相同的离子束点位置分离样品上的同位素，就像磁场 不存在 在来自消除磁场发生器的离子束的光轴上产生消除磁场，从而抵消由于外部磁场引起的离子束的偏转。

公开(公告)号：US20060022150A1

公开(公告)日：2006-02-02

申请号：US11189901

申请日：2005-07-27

申请人： Koichiro Takeuchi ,  Tohru Ishitani ,  Yoichi Ose

发明人： Koichiro Takeuchi ,  Tohru Ishitani ,  Yoichi Ose

IPC分类号： H01J1/50

CPC分类号： H01J37/09 ,  H01J37/3056 ,  H01J2237/0264 ,  H01J2237/31749

摘要： A focused ion beam apparatus and a focused ion beam irradiation method are disclosed. Even in the case where a magnetic field exists on the optical axis of an ion beam and the particular magnetic field undergoes a change, the ion beam is focused without separating the isotopes on the sample at the same ion beam spot position as if the magnetic field is not existent. A canceling magnetic field is generated on the optical axis of the ion beam from a canceling magnetic field generator thereby to offset the deflection of the ion beam due to the external magnetic field.

摘要翻译： 公开了一种聚焦离子束装置和聚焦离子束照射方法。 即使在离子束的光轴上存在磁场并且特定的磁场发生变化的情况下，也可以将离子束聚焦，而不会在相同的离子束点位置分离样品上的同位素，就像磁场 不存在 在来自消除磁场发生器的离子束的光轴上产生消除磁场，从而抵消由于外部磁场引起的离子束的偏转。

公开(公告)号：US06970004B2

公开(公告)日：2005-11-29

申请号：US10803932

申请日：2004-03-19

申请人： Tohru Ishitani ,  Hidemi Koike ,  Aritoshi Sugimoto ,  Isamu Sekihara ,  Kaoru Umemura ,  Satoshi Tomimatsu ,  Junzo Azuma

发明人： Tohru Ishitani ,  Hidemi Koike ,  Aritoshi Sugimoto ,  Isamu Sekihara ,  Kaoru Umemura ,  Satoshi Tomimatsu ,  Junzo Azuma

IPC分类号： G01R31/265 ,  G01R31/28 ,  G01R31/302 ,  G01R31/303 ,  G01R31/305 ,  G01R31/307 ,  G01R31/311 ,  H01J37/20 ,  H01J37/28 ,  G01R31/00 ,  G01R31/26 ,  H01L27/00

CPC分类号： G01R31/311 ,  G01R31/2851 ,  G01R31/303

摘要： Disconnection defects, short-circuit defects and the like in wiring patterns of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (16), and fixed type conductor probe means (21) that is relatively fixed to an FIB generator (10). Positions of probe tips are superimposed to an SIM image and displayed on a display unit (19).

摘要翻译： 可以在大芯片（20〜25mm的正方形）内大量排列的TEG（每个为1〜2.5mm的方形）内的亚微米尺寸的布线图案中的断路缺陷，短路缺陷等相对于 所有的TEG，具有良好的可操作性，高可靠性和高效率。 用于通过机械接触对布线图案施加电压的导体探针由与样品台（16）的移动同步的同步型导体探针和相对固定于FIB发生器的固定型导体探针装置（21）组成， 10）。 探针尖端的位置叠加到SIM图像上并显示在显示单元上（19）。

公开(公告)号：US20050092922A1

公开(公告)日：2005-05-05

申请号：US10973304

申请日：2004-10-27

申请人： Hiroyuki Muto ,  Tohru Ishitani ,  Yuichi Madokoro

发明人： Hiroyuki Muto ,  Tohru Ishitani ,  Yuichi Madokoro

IPC分类号： G01N23/00 ,  G21K7/00 ,  H01J37/30

CPC分类号： H01J37/3005 ,  H01J2237/304 ,  H01J2237/3114

摘要： For the sake of realizing high throughput and high processing position accuracy in an ion beam apparatus, two kinds of ion beams for processing are prepared of which one is a focusing ion beam for high image resolution and an edge processing ion beam of large beam current for permitting a sectional edge portion to be processed sharply, whereby high processing position accuracy can be ensured even with a large current ion beam.

摘要翻译： 为了在离子束装置中实现高吞吐量和高处理位置精度，准备两种用于处理的离子束，其中一种是用于高分辨率的聚焦离子束和用于大束流的边缘处理离子束 允许边缘部分被尖锐地加工，从而即使用大的电流离子束也能够确保高的加工位置精度。

公开(公告)号：US06627889B2

公开(公告)日：2003-09-30

申请号：US10152000

申请日：2002-05-22

申请人： Isao Ochiai ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Muneyuki Fukuda ,  Mitsugu Sato ,  Tohru Ishitani

发明人： Isao Ochiai ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Muneyuki Fukuda ,  Mitsugu Sato ,  Tohru Ishitani

IPC分类号： G01N2300

CPC分类号： H01J37/256 ,  H01J2237/2561 ,  H01J2237/31745

摘要： An apparatus and method for observing a sample that is capable of making observations by irradiating an electron beam to a sample in the form of a thin film, and making elemental analysis accurately and with increased resolution while reducing background noise. A particular portion of the sample is observed by the electron beam by disposing a light element piece having a hole provided immediately behind the thin film sample. According to the present invention, it is possible to reduce the x-rays generated from portions other than the sample and electron beam incident on the sample after being scattered to portions other than the sample when observing the thin film sample by irradiating the electron beam. It is therefore possible to make secondary electron observation and elemental analysis with increased accuracy and sensitivity. Thus, an apparatus and a method for observing samples is provided that allows for the accurate and high-resolution internal observation of LSI devices.

摘要翻译： 一种用于观察能够通过以薄膜形式向样品照射电子束而进行观察的样品的装置和方法，并且在降低背景噪声的同时精确地并且以更高的分辨率进行元素分析。 通过设置具有设置在薄膜样品后面的孔的光元件片，通过电子束观察样品的特定部分。 根据本发明，通过照射电子束来观察薄膜样品时，可以减少在样品和入射到样品上的部分之后产生的X射线在散射到除了样品之外的部分之外的部分。 因此，可以以更高的精度和灵敏度进行二次电子观察和元素分析。 因此，提供了用于观察样本的装置和方法，其允许LSI器件的精确和高分辨率的内部观察。

公开(公告)号：US5656811A

公开(公告)日：1997-08-12

申请号：US490423

申请日：1995-06-14

申请人： Fumikazu Itoh ,  Toshihiko Nakata ,  Tohru Ishitani ,  Akira Shimase ,  Hiroshi Yamaguchi ,  Takashi Kamimura

发明人： Fumikazu Itoh ,  Toshihiko Nakata ,  Tohru Ishitani ,  Akira Shimase ,  Hiroshi Yamaguchi ,  Takashi Kamimura

IPC分类号： G01B11/06 ,  B23K15/00 ,  C23F4/00 ,  G01N1/28 ,  G01N1/32 ,  G01Q60/00 ,  H01J37/26 ,  H01J37/28 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317 ,  H01L21/66 ,  H01J37/30

CPC分类号： H01J37/3056 ,  G01N1/32 ,  H01J37/226 ,  H01J37/3005 ,  H01J37/304 ,  H01J2237/30466 ,  H01J2237/3114 ,  H01J2237/31745

摘要： A method for making a specimen for use in observation through a transparent electron microscope, includes a step of milling part of the specimen into a thin film part, which can be observed through a transparent electron microscope, by scanning and irradiating a focused ion beam onto the specimen, a step of observing a mark for detection of a position provided on the specimen as a secondary charged particle image by scanning and irradiating a charged particle beam onto the specimen without irradiating the charged particle beam onto the portion to be milled into the thin film part during the milling, and a step of compensating for positional drift of the focused ion beam during milling in accordance with a result of the observation. The method is carried out by an apparatus which includes irradiation area control means for controlling an irradiation area of the focused ion beam onto the specimen so that a surface of the specimen to be milled into the thin film part is not included in the secondary charged particle image when the secondary charged particle image of the surface, on which the mark for detecting the milling position of the specimen is formed, is displayed by the secondary charged particle image during milling part of the specimen, and compensation means for compensating the positional drift of the focused ion beam during milling in accordance with the mark for detecting the milling position.

摘要翻译： 通过透明电子显微镜制造用于观察的试样的方法包括通过扫描和照射聚焦离子束将样品的一部分研磨成薄膜部分的步骤，其可以通过透明电子显微镜观察 样品，通过扫描并将带电粒子束照射到样本上而不将所述被加入的颗粒束照射到待研磨的部分上来观察用于检测设置在样品上的位置的标记作为二次带电粒子图像的步骤， 在研磨期间的薄膜部分，以及根据观察结果补偿在研磨期间聚焦离子束的位置漂移的步骤。 该方法由包括照射区域控制装置的装置进行，该照射区域控制装置用于将聚焦离子束的照射区域控制在样本上，使得待研磨到薄膜部分中的样品的表面不包括在二次带电粒子中 当在样品的研磨部分期间，通过二次带电粒子图像显示用于检测样品的研磨位置的标记的表面的二次带电粒子图像的图像，以及用于补偿样品的位置漂移的补偿装置 根据用于检测铣削位置的标记在铣削期间聚焦的离子束。