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    Semiconductor laser device and method of manufacturing the same
    52.
    发明授权
    Semiconductor laser device and method of manufacturing the same 失效
    半导体激光器件及其制造方法

    公开(公告)号：US07079563B2

    公开(公告)日：2006-07-18

    申请号：US10743944

    申请日：2003-12-24

    申请人： Mamoru Miyachi ,  Atsushi Watanabe ,  Hirokazu Takahashi ,  Yoshinori Kimura

    发明人： Mamoru Miyachi ,  Atsushi Watanabe ,  Hirokazu Takahashi ,  Yoshinori Kimura

    IPC分类号： H01S5/00

    CPC分类号： H01S5/32341 ,  H01L2224/48463 ,  H01S5/0202 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/4043 ,  H01S5/4087

    摘要： An improved semiconductor laser device is provided which has a small distance between laser light emitting spots. Such laser device comprises i) a first light emitting element including a laser oscillation section provided with a ridge waveguide and formed by forming a group-III nitride semiconductor film on a substrate, an insulating layer and an ohmic electrode layer, ii) a second light emitting element including a laser oscillation section provided with a waveguide and formed by forming III–V compound semiconductor film, an insulating layer and an ohmic electrode layer. By virtue of the adhesive metal layer interposed between the two ohmic electrode layers, the two laser oscillation sections are combined together, thereby forming the improved semiconductor laser device which has a small distance between laser light emitting spots of the two laser oscillation sections.

    摘要翻译： 提供了一种在激光发光点之间具有小距离的改进的半导体激光器件。 这种激光装置包括：i）第一发光元件，其包括设置有脊波导的激光振荡部，并且通过在基板上形成III族氮化物半导体膜，形成绝缘层和欧姆电极层，ii）第二光 包括设置有波导并通过形成III-V化合物半导体膜，绝缘层和欧姆电极层形成的激光振荡部的发光元件。 通过插入在两个欧姆电极层之间的粘合金属层，将两个激光振荡部分组合在一起，从而形成在两个激光振荡部分的激光发光点之间具有小距离的改进的半导体激光器装置。

    Data storage system
    53.
    发明授权
    Data storage system 失效
    数据存储系统

    公开(公告)号：US07046470B2

    公开(公告)日：2006-05-16

    申请号：US10782857

    申请日：2004-02-23

    申请人： Akira Yamanashi ,  Hirokazu Takahashi ,  Takamasa Ishikawa ,  Kenichi Tateyama

    发明人： Akira Yamanashi ,  Hirokazu Takahashi ,  Takamasa Ishikawa ,  Kenichi Tateyama

    IPC分类号： G11B15/18

    CPC分类号： H05K7/20581 ,  G06F1/20 ,  G11B33/142

    摘要： The information storage apparatus has an internal structure and arrangement of fans in consideration of the cooling effect. The capacity of the entire apparatus can be smaller than that of a conventional apparatus and an optimum air channel can be formed so as to maintain reliability of performance, life and the like of components at high temperatures. Further, relatively speaking, a module which does not produce a large amount of heat and does not require cooling is provided in a front stage of the channel while a module including heat-producing components and a cooling fan is provided in a rear stage of the channel.

    摘要翻译： 考虑到冷却效果，信息存储装置具有风扇的内部结构和布置。 整个装置的容量可以小于常规装置的容量，并且可以形成最佳的空气通道，以便在高温下保持部件的性能，寿命等的可靠性。 此外，相对来说，在通道的前级设置有不产生大量热量并且不需要冷却的模块，同时在包括发热部件和冷却风扇的模块设置在 渠道。

    Electronic equipment
    54.
    发明授权
    Electronic equipment 失效
    电子设备

    公开(公告)号：US07042722B2

    公开(公告)日：2006-05-09

    申请号：US10769807

    申请日：2004-02-03

    申请人： Katsuyoshi Suzuki ,  Hirokazu Takahashi ,  Masakatsu Horii ,  Kenichi Tateyama ,  Taro Takahashi ,  Hiroshi Suwa ,  Kouji Furuta

    发明人： Katsuyoshi Suzuki ,  Hirokazu Takahashi ,  Masakatsu Horii ,  Kenichi Tateyama ,  Taro Takahashi ,  Hiroshi Suwa ,  Kouji Furuta

    IPC分类号： H05K7/20

    CPC分类号： H05K7/20581

    摘要： An object is to effectively cool down an electronic equipment which is face with height limitations and tends to readily increase in heat generation amount to thereby provide the reliability required. The interior of a chassis of a control unit is partitioned by a back board into a front side space and a rear side space. In the rear side space, two control modules are attached so that these are stacked up and down, while two fan modules and a single duct member are attached in the front side space. Each fan module has two fans as built therein. A cooling air stream or “wind” from each fan flows into the lower-side control module through the duct member and others, whereas a cooling wind from the other fan flows into the upper-side control module. Even when either one of the fan modules goes down during operation, it is still possible by using the remaining fan module to cool down the both control modules.

    摘要翻译： 目的是有效地冷却面对高度限制的电子设备，并且容易增加发热量，从而提供所需的可靠性。 控制单元的底盘的内部由后板划分成前侧空间和后侧空间。 在后侧空间中，安装有两个控制模块，以便它们被上下堆叠，而两个风扇模块和单个管道构件连接在前侧空间中。 每个风扇模块都有两个内置的风扇。 来自每个风扇的冷却空气流或“风”通过管道构件等流入下侧控制模块，而来自另一风扇的冷却风流入上侧控制模块。 即使任何一个风扇模块在运行期间都熄灭，仍然可以使用剩余的风扇模块来冷却两个控制模块。

    Semiconductor light-emitting element and method of manufacturingthe same
    55.
    发明申请
    Semiconductor light-emitting element and method of manufacturingthe same 失效
    半导体发光元件及其制造方法

    公开(公告)号：US20060027814A1

    公开(公告)日：2006-02-09

    申请号：US10535175

    申请日：2003-11-12

    申请人： Atsushi Watanabe ,  Atsuya Ito ,  Hirokazu Takahashi ,  Yoshinori Kimura ,  Mamoru Miyachi

    发明人： Atsushi Watanabe ,  Atsuya Ito ,  Hirokazu Takahashi ,  Yoshinori Kimura ,  Mamoru Miyachi

    IPC分类号： H01L33/00

    CPC分类号： B82Y20/00 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/34333

    摘要： The semiconductor light-emitting element uses a compound semiconductor quantum well structure comprising a well layer, and barrier layers between which the well layer is sandwiched, as an active layer. In the adjacent well layer and barrier layers of the semiconductor light-emitting element, the well layer has in part a doped well region to which an n-type impurity is added at the interface with the barrier layer on the electron injection side, and in the vicinity of this interface, and the barrier layer has a doped barrier region to which the n-type impurity is added at least at the interface and in the vicinity of this interface.

    摘要翻译： 半导体发光元件使用包括阱层的化合物半导体量子阱结构和夹在阱层之间的阻挡层作为有源层。 在半导体发光元件的相邻的阱层和阻挡层中，阱层部分具有与电子注入侧的势垒层的界面处添加n型杂质的掺杂阱区域， 该界面附近，势垒层具有至少在界面处和界面附近添加n型杂质的掺杂阻挡区域。

    Group III nitride compound semiconductor laser and manufacturing method thereof
    57.
    发明授权
    Group III nitride compound semiconductor laser and manufacturing method thereof 失效
    III族氮化物半导体激光器及其制造方法

    公开(公告)号：US06795471B2

    公开(公告)日：2004-09-21

    申请号：US10117095

    申请日：2002-04-08

    申请人： Atsushi Watanabe ,  Yoshinori Kimura ,  Hiroyuki Ota ,  Toshiyuki Tanaka ,  Hirokazu Takahashi ,  Mamoru Miyachi ,  Atsuya Ito

    发明人： Atsushi Watanabe ,  Yoshinori Kimura ,  Hiroyuki Ota ,  Toshiyuki Tanaka ,  Hirokazu Takahashi ,  Mamoru Miyachi ,  Atsuya Ito

    IPC分类号： H01S500

    CPC分类号： H01S5/32341 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/221 ,  H01S5/2216 ,  H01S5/222 ,  H01S5/2222 ,  H01S2301/18 ,  H01S2304/00

    摘要： A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa1-x)1-yInyN (0≦x≦1, 0≦y≦1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Alx′Ga1-x′-y′Iny′N (0≦x′≦1, 0≦y′≦1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Alx″Ga1-x″-y″Iny″N (0≦x″≦1, 0≦y″≦1) and deposited filling the aperture of the current constricting layer, and a clad layer made of AluGa1-u-vInvN (0≦u≦1, 0≦v≦1) and deposited on the electrode-side guide layer.

    摘要翻译： 驱动电压低且横向模式稳定的氮化物化合物半导体激光器具有由式（AlGa1-x）1-yInyN（0≤...）表示的由III族氮化物化合物半导体构成的多个晶体层， x <= 1，0 <= y <= 1）。 这些层包括与III族氮化物化合物半导体的晶体层中的有源层相邻的有源层侧引导层，由Al x Ga 1-x'-y'In y'N（0 <= x' = 1,0 <= y'<= 1），沉积在所述引导层上并具有条形孔的电流收缩AlN层，由Al x''Ga 1-x“y”形成的电极侧引导层， “Iny''N（0 <= x”<= 1,0,0 <= y“<= 1），并填充电流收缩层的孔径，以及由AluGa1-u-vInvN（0 <= u <= 1，0 <= v <= 1）并沉积在电极侧引导层上。

    Nitride semiconductor light emitting device and manufacturing method thereof
    58.
    发明授权
    Nitride semiconductor light emitting device and manufacturing method thereof 有权
    氮化物半导体发光器件及其制造方法

    公开(公告)号：US06329667B1

    公开(公告)日：2001-12-11

    申请号：US09497695

    申请日：2000-02-08

    申请人： Hiroyuki Ota ,  Mitsuru Nishitsuka ,  Hirokazu Takahashi

    发明人： Hiroyuki Ota ,  Mitsuru Nishitsuka ,  Hirokazu Takahashi

    IPC分类号： H01L2906

    CPC分类号： H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/10 ,  H01S5/2081 ,  H01S5/32341

    摘要： A nitride semiconductor light emitting device having preferable light emitting characteristics even if dense threading dislocations extend through single crystal layers. The nitride semiconductor light emitting device includes an active layer obtained by depositing group-3 nitride semiconductors, and a barrier layer disposed adjacent to the active layer and having a greater bandgap than that of the active layer, the active layer having barrier portions which surround the threading dislocations and are defined by interfaces enclosing the threading dislocation and which are made of the same material as that of the barrier layer.

    摘要翻译： 即使致密的穿透位错延伸穿过单晶层，也具有优选的发光特性的氮化物半导体发光器件。 氮化物半导体发光器件包括通过沉积III族氮化物半导体获得的有源层和与有源层相邻设置并且具有比有源层更大的带隙的势垒层，所述有源层具有包围所述有源层的势垒部分 穿透位错并且由包围穿透位错的界面限定，并且由与阻挡层相同的材料制成。

    Still image reproducing system having means for causing a movement of the reproducing head
    60.
    发明授权
    Still image reproducing system having means for causing a movement of the reproducing head 失效
    具有用于引起再现头的移动的装置的静止图像再现系统

    公开(公告)号：US5179480A

    公开(公告)日：1993-01-12

    申请号：US531641

    申请日：1990-06-01

    申请人： Hirokazu Takahashi

    发明人： Hirokazu Takahashi

    IPC分类号： G11B19/02 ,  G11B21/08 ,  H04N1/21 ,  H04N5/781

    CPC分类号： H04N1/2129 ,  G11B21/083 ,  H04N1/2112 ,  H04N5/781 ,  H04N2101/00

    摘要： A still image reproducing system includes reproducing structure for reproducing still image data recorded on a recording medium. Instructing circuitry is provided for issuing instructions to cause movement of a reproducing position of the reproducing structure. Circuitry is provided for measuring a time interval between the instructions issued by the instructing circuitry. Control circuitry is provided for selecting one of a plurality of operation modes of the reproducing structure according to the time interval measured by the measuring circuitry. The operation modes include a first mode in which still image data reproduced by the reproducing structure is muted, and a second mode in which still image data reproduced by the reproducing structure is not muted.

    摘要翻译： 静止图像再现系统包括用于再现记录在记录介质上的静止图像数据的再现结构。 提供指令电路用于发出指令以引起再现结构的再现位置的移动。 提供电路用于测量由指令电路发出的指令之间的时间间隔。 提供控制电路，用于根据由测量电路测量的时间间隔选择再现结构的多个操作模式之一。 操作模式包括其中由再现结构再现的静止图像数据被静音的第一模式和由再现结构再现的静止图像数据不被静音的第二模式。