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97 条记录 (耗时 0.069 秒)

    Silicon modulator offset tuning arrangement
    51.
    发明申请
    Silicon modulator offset tuning arrangement 有权
    硅调制器偏移调谐布置

    公开(公告)号：US20070292075A1

    公开(公告)日：2007-12-20

    申请号：US11810591

    申请日：2007-06-06

    申请人： Robert Keith Montgomery ,  Margaret Ghiron ,  Prakash Gothoskar ,  Paulius Mindaugas Mosinskis ,  Vipulkumar Patel ,  Kalpendu Shastri ,  Mark Webster

    发明人： Robert Keith Montgomery ,  Margaret Ghiron ,  Prakash Gothoskar ,  Paulius Mindaugas Mosinskis ,  Vipulkumar Patel ,  Kalpendu Shastri ,  Mark Webster

    IPC分类号： G02B6/12

    CPC分类号： G02F1/025 ,  G02F1/0147 ,  G02F1/225 ,  G02F2201/126

    摘要： A silicon-based optical modulator structure includes one or more separate localized heating elements for changing the refractive index of an associated portion of the structure and thereby providing corrective adjustments to address unwanted variations in device performance. Heating is provided by thermo-optic devices such as, for example, silicon-based resistors, silicide resistors, forward-biased PN junctions, and the like, where any of these structures may easily be incorporated with a silicon-based optical modulator. The application of a DC voltage to any of these structures will generate heat, which then transfers into the waveguiding area. The increase in local temperature of the waveguiding area will, in turn, increase the refractive index of the waveguiding in the area. Control of the applied DC voltage results in controlling the refractive index

    摘要翻译： 基于硅的光学调制器结构包括一个或多个单独的局部加热元件，用于改变结构的相关部分的折射率，从而提供校正调整以解决器件性能的不期望的变化。 加热由诸如硅基电阻器，硅化物电阻器，正向偏置PN结等的热光器件提供，其中这些结构中的任何一种可以容易地与硅基光学调制器结合。 对这些结构中的任何一个施加直流电压将产生热量，然后传递到波导区域。 波导区域的局部温度的增加又将增加该区域中波导的折射率。 施加的直流电压的控制导致控制折射率

    Offset launch mode from nanotaper waveguide into multimode fiber
    53.
    发明授权
    Offset launch mode from nanotaper waveguide into multimode fiber 有权
    从纳米孔波导到多模光纤的偏移发射模式

    公开(公告)号：US07706644B2

    公开(公告)日：2010-04-27

    申请号：US12218367

    申请日：2008-07-15

    申请人： Mark Webster ,  Prakash Gothoskar ,  Vipulkumar Patel ,  David Piede

    发明人： Mark Webster ,  Prakash Gothoskar ,  Vipulkumar Patel ,  David Piede

    IPC分类号： G02B6/26

    CPC分类号： G02B6/30 ,  G02B6/3598 ,  G02B6/3636 ,  G02B6/3652 ,  G02B6/3692 ,  G02B6/4249

    摘要： One or more nanotaper coupling waveguides formed within an optical substrate allows for straightforward, reproducible offset launch conditions to be achieved between an incoming signal and the core region of a multimode fiber (which may be disposed along an alignment fixture formed in the optical substrate), fiber array or other multimode waveguiding structure. Offset launching of a single mode signal into a multimode fiber couples the signal into favorable spatial modes which reduce the presence of differential mode dispersion along the fiber. This approach to providing single mode signal coupling into legacy multimode fiber is considered to be an improvement over the prior art which required the use of an interface element between a single mode fiber and multimode fiber, limiting the number of propagating signals and applications for the legacy multimode fiber. An optical switch may be used to select the specific nanotaper(s) for coupling into the multimode fiber.

    摘要翻译： 形成在光学衬底内的一个或多个纳米锥耦合波导允许在多模光纤（其可以沿着形成在光学衬底中的对准夹具设置）的入射信号和芯区域之间实现简单，可再现的偏移发射条件， 光纤阵列或其他多模波导结构。 偏移将单模信号发射到多模光纤中将信号耦合到有利的空间模式，这降低了沿着光纤的差分色散的存在。 将单模信号耦合提供给传统多模光纤的这种方法被认为是对需要使用单模光纤和多模光纤之间的接口元件的现有技术的改进，限制了传播信号的数量和遗留的应用 多模光纤 可以使用光学开关来选择用于耦合到多模光纤的特定纳米锥。

    Crystalline N-acetyl neuraminic acid derivatives and process for their preparation
    57.
    发明授权
    Crystalline N-acetyl neuraminic acid derivatives and process for their preparation 有权
    结晶N-乙酰神经氨酸衍生物及其制备方法

    公开(公告)号：US06294572B1

    公开(公告)日：2001-09-25

    申请号：US09346583

    申请日：1999-07-02

    申请人： Christopher Williamson ,  William James White ,  Vipulkumar Patel

    发明人： Christopher Williamson ,  William James White ,  Vipulkumar Patel

    IPC分类号： A61K31351

    CPC分类号： C07D309/28

    摘要： Two useful crystal hydrates of 5-acetamido-2,3,4,5-tetradeoxy-4-guanidino-D-glycero-D-galacto-non-2-enopyranosonic acid have either a low or high aspect ratio. These crystalline N-acetyl neurominic acid derivatives are favored for pharmaceutical formulation because of their physical properties. For example, the low aspect ratio crystal has good flow properties, and the high aspect ratio crystal has a stable water content over time.

    摘要翻译： 5-乙酰氨基-2,3,4,5-四脱氧-4-胍基-D-甘油基-D-半乳-N-壬-2-吡喃糖酸的两种有用的晶体水合物具有低或高纵横比。 这些结晶N-乙酰神经氨酸衍生物由于其物理性质而优于药物制剂。 例如，低纵横比的晶体具有良好的流动特性，高长宽比的晶体随着时间的推移具有稳定的水分含量。

    Silicon-Based Schottky Barrier Detector With Improved Responsivity
    58.
    发明申请
    Silicon-Based Schottky Barrier Detector With Improved Responsivity 有权
    具有改善响应性的硅基肖特基势垒检测器

    公开(公告)号：US20110221019A1

    公开(公告)日：2011-09-15

    申请号：US13038470

    申请日：2011-03-02

    申请人： Vipulkumar Patel ,  Prakash Gothoskar ,  Mark Webster ,  Christopher J. Lang

    发明人： Vipulkumar Patel ,  Prakash Gothoskar ,  Mark Webster ,  Christopher J. Lang

    IPC分类号： H01L31/108

    CPC分类号： H01L31/101 ,  H01L31/1085

    摘要： A planar, waveguide-based silicon Schottky barrier photodetector includes a third terminal in the form of a field plate to improve the responsivity of the detector. Preferably, a silicide used for the detection region is formed during a processing step where other silicide contact regions are being formed. The field plate is preferably formed as part of the first or second layer of CMOS metallization and is controlled by an applied voltage to modify the electric field in the vicinity of the detector's silicide layer. By modifying the electric field, the responsivity of the device is “tuned” so as to adjust the momentum of “hot” carriers (electrons or holes, depending on the conductivity of the silicon) with respect to the Schottky barrier of the device. The applied potential functions to align with the direction of momentum of the “hot” carriers in the preferred direction “normal” to the silicon-silicide interface, allowing for an increased number to move over the Schottky barrier and add to the generated photocurrent.

    摘要翻译： 平面的基于波导的硅肖特基势垒光电检测器包括场板形式的第三端子，以提高检测器的响应度。 优选地，在其中形成其它硅化物接触区域的处理步骤期间形成用于检测区域的硅化物。 场板优选地形成为第一或第二CMOS金属化层的一部分，并且通过施加的电压来控制，以修改检测器硅化物层附近的电场。 通过修改电场，器件的响应度被“调谐”，以相对于器件的肖特基势垒调节“热”载流子（电子或空穴，取决于硅的导电性）的动量。 所施加的电位功能与“硅”载体的优势方向“正常”硅硅化物界面的动量方向相一致，允许增加的数量移动到肖特基势垒上并增加产生的光电流。

    Coupling between free space and optical waveguide using etched coupling surfaces
    60.
    发明申请
    Coupling between free space and optical waveguide using etched coupling surfaces 有权
    使用蚀刻的耦合表面在自由空间和光波导之间耦合

    公开(公告)号：US20090162013A1

    公开(公告)日：2009-06-25

    申请号：US12316540

    申请日：2008-12-11

    申请人： Mark Webster ,  Vipulkumar Patel ,  Mary Nadeau ,  Prakash Gothoskar ,  David Piede

    发明人： Mark Webster ,  Vipulkumar Patel ,  Mary Nadeau ,  Prakash Gothoskar ,  David Piede

    IPC分类号： G02B6/42

    CPC分类号： G02B6/32 ,  G02B6/305 ,  G02B6/327

    摘要： A plasma-based etching process is used to specifically shape the endface of an optical substrate supporting an optical waveguide into a contoured facet which will improve coupling efficiency between the waveguide and a free space optical signal. The ability to use standard photolithographic techniques to pattern and etch the optical endface facet allows for virtually any desired facet geometry to be formed—and replicated across the surface of a wafer for the entire group of assemblies being fabricated. A lens may be etched into the endface using a properly-defined photolithographic mask, with the focal point of the lens selected with respect to the parameters of the optical waveguide and the propagating free space signal. Alternatively, an angled facet may be formed along the endface, with the angle sufficient to re-direct reflected/scattered signals away from the optical axis.

    摘要翻译： 使用基于等离子体的蚀刻工艺来将支撑光波导的光学基板的端面特别地成形为轮廓刻面，这将提高波导与自由空间光信号之间的耦合效率。 使用标准光刻技术对光学端面小平面进行图案化和刻蚀的能力允许形成任何所需的刻面几何形状，并跨越制造的整组组件在晶片的表面上复制。 可以使用适当限定的光刻掩模将透镜蚀刻到端面中，相对于光波导的参数和传播的自由空间信号选择透镜的焦点。 或者，可以沿着端面形成成角度的小面，其角度足以将反射/散射信号重新引导远离光轴。