摘要:
A method of reviewing defects on a substrate. The method includes inputting information of defects on a substrate detected by a detection apparatus, identifying cluster of defects detected on the substrate by using the inputted information, selecting defects to be reviewed from the cluster identified, reviewing the selected defects, and classifying the reviewed defects.
摘要:
From the coordinate data of defects detected on the circuit patterns, the areas where the defects belong are identified. The sizes of the defects detected are compared with the data to determine the lethality to thereby determine the lethality of the defects. Further, the severity of the defects is calculated from the sizes of the defects to thereby select the review object in the descending order of the severity. Thereby, when inspecting the circuit patterns on a semiconductor wafer or the like, the lethality of the defects can automatically be determined even though the review is not carried out, enhancing the efficiency of the inspection. To perform the review with efficiency, the defects to be reviewed are automatically selected, while the quality of the inspection itself is maintained.
摘要:
A method and system for inspecting and/or analyzing semiconductor devices in which particles in a semiconductor wafer which is processed in a semiconductor device manufacturing line are detected. A particle is selected from among the detected particles and the selected particle is etched to expose a cross section of the selected particle. The selected particle whose cross section is exposed has the element thereof analyzed, and after analyzation, the semiconductor wafer is continued to be processed in the semiconductor device manufacturing line. For etching, pattern data having an edge which intersects the selected particle is created and the semiconductor wafer which is coated with a photosensitive material is exposed by a light pattern according to the pattern data so that an edge intersects the selected particle. Thereafter, the etching is carried out to expose the cross section of the selected particle and analyzation is effected.
摘要:
A method and apparatus is disclosed for detecting a pattern image of each of a plurality of patterns on the surface of an object. Light emitted from either a light source including a wide wavelength or a light source including a plurality of monowavelengths is applied to the object. The object includes a layered structure having a plurality of layers, wherein at least a part of an uppermost layer of the object is optically transparent. Spectral illumination intensity characteristics of the light emitted from the light source is varied, depending on information about both the layered structure of the object, and a material of the object to obtain a desired spectral illumination intensity, and a pattern image of each of patterns is detected as either a one-dimensional or a two-dimensional image based on light reflected from the object.
摘要:
The invention relates to a semiconductor exposing system for projecting a pattern of a mask onto a semiconductor wafer and, more particularly, to such a system having an apparatus for correcting an influence on the resolution by a fluctuation in wavelength of a laser light source. The system of the invention comprises: a laser light source; an optical projecting system for projecting a laser beam emitted from the laser light source onto the semiconductor wafer through the mask; and an apparatus for receiving a part of the laser beam emitted from the laser light source, for detecting the wavelength fluctuation, and for correcting the position and magnification of the optical projecting system in accordance with the wavelength fluctuation value or an apparatus for correcting the refractive index of the optical projecting system.
摘要:
A defect inspection system is disclosed for easily setting inspection conditions and providing an inspection condition and a defect signal intensity to an operator. The defect inspection system digitizes a defective image, and a reference image corresponding thereto and a mismatched portion of the defective image and the reference image as a defect signal intensity and accumulates them in association with the inspection condition. The inspection conditions are changed to repeat evaluations while repeating accumulating works until the evaluation of all the inspection conditions in a set range is completed. A recipe file including the accumulated conditions having the high defect signal intensity and an inspection condition item distribution as a inspection condition recipe is automatically outputted and provided to the operator.
摘要:
Disclosed is a distance measuring device using an optical comb. In order for the absolute distance to an object to be measured which has a surface with low reflection ratio or a scattering surface and is approximately 10 m apart, to be easily measured with accuracy of 0.1 mm or more using an optical and contactless method, the distance measuring device which measures the distance to the object to be measured is configured such that the distance to the object to be measured is measured by comparing the phase of the beat signal between a light source and a plurality of CW lasers which are reflected or scattered by the object with the phase of the beat signal between the light source and a plurality of CW lasers prior to being irradiated onto the object.
摘要:
A defect inspection device comprises an inspection optical system including a light source, a half mirror for reflecting illumination light emitted from the light source, a catadioptric objective lens for collecting reflected light from the sample by illumination light reflected by the half mirror, an imaging lens for focusing the reflected light transmitted through the catadioptric objective lens, a relay lens having a blocking member provided at a position at which specularly reflected light from the sample is focused by the imaging lens, and a detector for defecting the reflected light of the specularly deflected light blocked by the blocking member; and a computation processing unit for detecting defects of the sample on the basis of the signals detected by the detector.
摘要:
Measurement cannot be made when trying to measure a wavefront aberration of a wide-angle lens, being wide in a field of view, comparing to a focus distance, by a Shack-Hartmann sensor, since an inclination of the wavefront exceeds an allowable value of inclination of the Shack-Hartmann sensor.The Shack-Hartmann sensor is inclined at a position of a pupil of a lens, and is controlled so that it lies within the allowable value mentioned above. Photographing is made through step & repeat while overlapping at the same position, to compose in such a manner that overlapping spots are piled up, and thereby measuring the wavefront aberration of the lens having a large pupil diameter.
摘要:
The present invention relates to a defect inspection system which can perform inspection condition setting easily in a relatively short period of time, can examine the inspection condition setting even when there is no sample, and further can provide an inspection condition and a defect signal intensity to a person, who sets the inspection condition, to assist the inspection condition setting. In the defect inspection system, a defective image, which is an inspection image, and a reference image corresponding thereto and a mismatched portion of the defective image and the reference image are digitalized as a defect signal intensity and accumulated in association with the inspection condition, and the inspection conditions are changed to repeat evaluations while repeating accumulating works until the evaluation of all the inspection conditions in a set range is completed. After all the evaluations are completed, if there are a plurality of defects to be inspected, the work is repeated by times corresponding to the number of kinds of the defects and a recipe file including the accumulated conditions having the high defect signal intensity and an inspection condition item distribution as a inspection condition recipe is automatically outputted and is provided to the person who sets the inspection condition. And, appearance inspection for detecting a pattern defect or a foreign material defect on a substrate is performed.