公开(公告)号：US06326658B1

公开(公告)日：2001-12-04

申请号：US09404594

申请日：1999-09-24

申请人： Yoshitaka Tsunashima ,  Katsuya Okumura ,  Masayuki Tanaka ,  Shigehiko Saida ,  Hirofumi Inoue ,  Takeshi Hamamoto

发明人： Yoshitaka Tsunashima ,  Katsuya Okumura ,  Masayuki Tanaka ,  Shigehiko Saida ,  Hirofumi Inoue ,  Takeshi Hamamoto

IPC分类号： H01L27108

CPC分类号： H01L27/10867

摘要： A buried strap is formed after forming an SiC layer on the side surface of a trench in order to suppress the epitaxial growth of Si from the side surface (single crystal Si) of the trench to the buried strap (polycrystalline Si) without causing an increase in the contact resistance in the post process accompanied by high temperature after formation of the buried strap.

摘要翻译： 在沟槽侧面上形成SiC层之后形成掩埋带，以抑制从沟槽的侧表面（单晶Si）到掩埋带（多晶Si）的Si的外延生长而不会增加 在后处理中的接触电阻伴随着形成埋藏带的高温。

公开(公告)号：US6146938A

公开(公告)日：2000-11-14

申请号：US340143

申请日：1999-06-28

申请人： Shigehiko Saida ,  Yoshitaka Tsunashima ,  Tsutomu Sato

发明人： Shigehiko Saida ,  Yoshitaka Tsunashima ,  Tsutomu Sato

IPC分类号： H01L21/02 ,  H01L21/318 ,  H01L21/8242

CPC分类号： H01L27/1087 ,  H01L28/40 ,  H01L21/3185 ,  H01L27/1085

摘要： A native film formed on the surface of a silicon substrate is removed. Arsenic is doped into the surface of the silicon substrate to form an n-type impurity diffusion layer as a lower capacitor electrode. A silicon nitride film as a capacitor insulating film is formed on the n-type impurity diffusion layer without growing any oxide film on the surface of the n-type impurity diffusion layer. An upper capacitor electrode is formed on the silicon nitride film.

摘要翻译： 去除在硅衬底的表面上形成的天然膜。 砷被掺杂到硅衬底的表面中以形成作为下电容器电极的n型杂质扩散层。 在n型杂质扩散层上形成作为电容绝缘膜的氮化硅膜，而不会在n型杂质扩散层的表面上生长任何氧化膜。 在氮化硅膜上形成上部电容电极。

公开(公告)号：US06133121A

公开(公告)日：2000-10-17

申请号：US950913

申请日：1997-10-15

申请人： Yoshitaka Tsunashima ,  Katsuya Okumura ,  Shigeru Yonemoto

发明人： Yoshitaka Tsunashima ,  Katsuya Okumura ,  Shigeru Yonemoto

IPC分类号： C23C16/458 ,  H01L21/31 ,  H01L21/324 ,  H01L21/673 ,  C23C16/00

CPC分类号： H01L21/67303 ,  C23C16/4583 ,  H01L21/67306 ,  H01L21/67309

摘要： A plurality of rods are arranged between first and second plates. A plurality of support members formed of heat-resistant strings, for example, SiC are stretched between the rods and wafers are supported by the support members. The wafers are separated from the rods while they are supported on the support members.

摘要翻译： 多个杆布置在第一和第二板之间。 由耐热线圈例如SiC形成的多个支撑构件在杆之间拉伸，并且晶片由支撑构件支撑。 当晶片被支撑在支撑构件上时，晶片与棒分离。

公开(公告)号：US6091117A

公开(公告)日：2000-07-18

申请号：US373558

申请日：1999-08-13

申请人： Jun-ichi Shiozawa ,  Yoshitaka Tsunashima ,  Katsuya Okumura

发明人： Jun-ichi Shiozawa ,  Yoshitaka Tsunashima ,  Katsuya Okumura

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L29/08

CPC分类号： H01L29/66628 ,  H01L21/76895 ,  H01L29/0847

摘要： A field effect transistor is manufactured by forming an isolating structure on a semiconductor substrate to define an active area. A gate structure is formed which is insulated from a surface of the active area of the semiconductor substrate. An amorphous silicon film is formed on the gate structure, on the surface of the semiconductor substrate, and on the isolating structure. A first portion of the amorphous silicon film is converted to an epitaxial film and a second portion of the amorphous silicon film is converted to a polysilicon film. Impurities are diffused throughout the polysilicon film and into an upper surface portion of said epitaxial film. The impurity doped polysilicon film and the upper surface portion of the epitaxial film are oxidized to form oxide films and the oxide films are removed so that the epitaxial film remains at least on the active area of the semiconductor substrate. Source and drain regions of the transistor are formed in the active area of the semiconductor substrate.

摘要翻译： 通过在半导体衬底上形成隔离结构来限定有源区域来制造场效应晶体管。 形成与半导体衬底的有源区的表面绝缘的栅极结构。 在栅极结构，半导体衬底的表面和隔离结构上形成非晶硅膜。 将非晶硅膜的第一部分转变为外延膜，将非晶硅膜的第二部分转换为多晶硅膜。 杂质扩散到整个多晶硅膜并进入所述外延膜的上表面部分。 杂质掺杂多晶硅膜和外延膜的上表面部分被氧化以形成氧化物膜，并且去除氧化物膜，使得外延膜至少保留在半导体衬底的有源区上。 晶体管的源区和漏区形成在半导体衬底的有源区中。

公开(公告)号：US5970352A

公开(公告)日：1999-10-19

申请号：US64716

申请日：1998-04-23

申请人： Jun-ichi Shiozawa ,  Yoshitaka Tsunashima ,  Katsuya Okumura

发明人： Jun-ichi Shiozawa ,  Yoshitaka Tsunashima ,  Katsuya Okumura

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L29/08

CPC分类号： H01L29/66628 ,  H01L21/76895 ,  H01L29/0847

摘要： A field effect transistor is manufactured by forming an isolating structure on a semiconductor substrate to define an active area. A gate structure is formed which is insulated from a surface of the active area of the semiconductor substrate. An amorphous silicon film is formed on the gate structure, on the surface of the semiconductor substrate, and on the isolating structure. A first portion of the amorphous silicon film is converted to an epitaxial film and a second portion of the amorphous silicon film is converted to a polysilicon film. Impurities are diffused throughout the polysilicon film and into an upper surface portion of said epitaxial film. The impurity doped polysilicon film and the upper surface portion of the epitaxial film are oxidized to form oxide films and the oxide films are removed so that the epitaxial film remains at least on the active area of the semiconductor substrate. Source and drain regions of the transistor are formed in the active area of the semiconductor substrate.

摘要翻译： 通过在半导体衬底上形成隔离结构来限定有源区域来制造场效应晶体管。 形成与半导体衬底的有源区的表面绝缘的栅极结构。 在栅极结构，半导体衬底的表面和隔离结构上形成非晶硅膜。 将非晶硅膜的第一部分转变为外延膜，将非晶硅膜的第二部分转换为多晶硅膜。 杂质扩散到整个多晶硅膜并进入所述外延膜的上表面部分。 杂质掺杂多晶硅膜和外延膜的上表面部分被氧化以形成氧化物膜，并且去除氧化物膜，使得外延膜至少保留在半导体衬底的有源区上。 晶体管的源区和漏区形成在半导体衬底的有源区中。

公开(公告)号：US5605574A

公开(公告)日：1997-02-25

申请号：US530641

申请日：1995-09-20

申请人： Yoshitaka Tsunashima ,  Katsuya Okumura

发明人： Yoshitaka Tsunashima ,  Katsuya Okumura

IPC分类号： H01L21/683 ,  C01B31/36 ,  C23C16/458 ,  C30B25/12 ,  C30B31/14 ,  F16F1/02 ,  H01L21/673 ,  C23C16/00

CPC分类号： H01L21/67309 ,  C23C16/4583 ,  C30B25/12 ,  C30B31/14

摘要： The wafer support apparatus and method provide a plurality of elastic supports having a smooth curvature for contacting a wafer at a respective plurality of support points. Each elastic support directly contacts the wafer at a support point and expands and/or compresses independently of the other elastic supports to accommodate the bending of the wafer during processing.A wafer support apparatus includes a plurality of flexible elastic supports onto which a wafer is directly positioned, wherein each of the plurality of elastic supports holds the wafer during processing by compressing or expanding in response to bending of the wafer during processing to provide continuous even support for the wafer during processing. A wafer support method includes the steps of providing a plurality of flexible elastic supports and positioning a wafer to be processed directly on the plurality of elastic supports, wherein each of the plurality of elastic supports holds the wafer during processing by compressing or expanding in response to bending of the wafer during processing to provide continuous even support for the wafer during processing.The elastic supports may be manufactured using a method including the steps of providing a mold in the shape of a wafer elastic support; depositing a layer of an elastic material having low thermal expansion coefficient on the mold; forming a hole in the deposited layer of elastic material at the base of the mold; and burning out the mold.

摘要翻译： 晶片支撑装置和方法提供了多个具有平滑曲率的弹性支撑件，用于在相应的多个支撑点处接触晶片。 每个弹性支撑件在支撑点处直接接触晶片并且独立于其它弹性支撑件膨胀和/或压缩以适应处理期间晶片的弯曲。 晶片支撑装置包括多个柔性弹性支撑件，晶片直接定位在该多个柔性弹性支撑件上，其中多个弹性支撑件中的每一个在处理期间通过在处理期间响应于晶片的弯曲而压缩或膨胀来保持晶片以提供连续的均匀支撑 用于处理过程中的晶圆。 一种晶片支撑方法包括以下步骤：提供多个柔性弹性支撑件并将待加工的晶片直接定位在所述多个弹性支撑件上，其中所述多个弹性支撑件中的每个弹性支撑件在处理期间通过压缩或扩张来响应于 在处理期间晶片的弯曲以在处理期间为晶片提供连续的均匀支撑。 可以使用包括以下步骤的方法制造弹性支撑件：提供具有晶片弹性支撑件形状的模具; 在模具上沉积具有低热膨胀系数的弹性材料层; 在模具底部的弹性材料的沉积层中形成孔; 并焚烧模具。

公开(公告)号：US5485034A

公开(公告)日：1996-01-16

申请号：US344694

申请日：1994-11-18

申请人： Takeo Maeda ,  Hiroshi Gojohbori ,  Yoshitaka Tsunashima

发明人： Takeo Maeda ,  Hiroshi Gojohbori ,  Yoshitaka Tsunashima

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L27/06 ,  H01L29/10 ,  H01L29/732 ,  H01L27/082 ,  H01L27/102 ,  H01L29/70 ,  H01L31/11

CPC分类号： H01L29/7322 ,  H01L27/0623 ,  H01L29/1004

摘要： A semiconductor device of this invention includes an N-type semiconductor region functioning as a collector of a bipolar transistor, a silicon dioxide film doped with boron and formed in contact with the surface of the N-type semiconductor region, a P-type semiconductor region formed in contact with the silicon dioxide film doped with boron in the N-type semiconductor region and functioning as a base of the bipolar transistor, and an N-type semiconductor region formed in the P-type semiconductor region and functioning as an emitter of the bipolar transistor.

摘要翻译： 本发明的半导体器件包括用作双极晶体管的集电极的N型半导体区域，掺杂有硼并与N型半导体区域的表面接触形成的二氧化硅膜，P型半导体区域 形成为与N型半导体区域中掺杂有硼的二氧化硅膜接触并用作双极晶体管的基极，并且形成在P型半导体区域中并用作发光体的N型半导体区域 双极晶体管。

公开(公告)号：US07972960B1

公开(公告)日：2011-07-05

申请号：US12886240

申请日：2010-09-20

申请人： Kyoichi Suguro ,  Yoshitaka Tsunashima

发明人： Kyoichi Suguro ,  Yoshitaka Tsunashima

IPC分类号： H01L21/44

CPC分类号： H01L21/288 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02639 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883

摘要： A method for manufacturing a thin film includes: applying a liquid to a surface of a processing target member having at least one of a trench and a concave portion. The liquid includes a solvent and at least one of fine particles of a metal, fine particles of a semiconductor, fine particles containing a metal oxide, and fine particles containing a semiconductor oxide. A first heat treatment is included for volatilizing the solvent of the liquid applied to the surface of the processing target member. The fine particles are remained on the surface of the processing target member. A second heat treatment is also included for heating the fine particles by using microwave irradiation. At least one of the trench and the concave portion is filled with the thin film containing the fine particles or a component of the fine particles.

摘要翻译： 一种制造薄膜的方法包括：将液体施加到具有沟槽和凹部中的至少一个的处理目标构件的表面。 该液体包括溶剂和金属微粒，半导体微粒，含有金属氧化物的微粒和含有半导体氧化物的微粒中的至少一种。 包括第一次热处理以挥发施加到加工对象部件表面的液体的溶剂。 微粒保留在加工对象构件的表面上。 还包括通过使用微波照射来加热微粒的第二热处理。 沟槽和凹部中的至少一个填充有含有细颗粒或细颗粒成分的薄膜。

公开(公告)号：US20100055869A1

公开(公告)日：2010-03-04

申请号：US12588087

申请日：2009-10-02

申请人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda ,  Yoshitaka Tsunashima

发明人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda ,  Yoshitaka Tsunashima

IPC分类号： H01L21/762

CPC分类号： H01L27/11521 ,  H01L27/11524

摘要： A method of manufacturing a semiconductor device comprises forming a trench in a semiconductor substrate, forming a first insulating film having a first recessed portion in the trench, forming a coating film so as to fill the first recessed portion therewith, transforming the coating film into a second insulating film, planarizing the second insulating film to expose the first insulating film and the second insulating film, removing at least the second insulating film from the first recessed portion to moderate an aspect ratio for the first recessed portion formed in the trench, thereby forming a second recessed portion therein, and forming a third insulating film on a surface of the semiconductor substrate so as to fill the second recessed portion therewith.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底中形成沟槽，在沟槽中形成具有第一凹陷部分的第一绝缘膜，形成涂膜以便将其涂覆在第一凹部中，将涂膜转变为 第二绝缘膜，平坦化第二绝缘膜以暴露第一绝缘膜和第二绝缘膜，至少从第一凹部去除第二绝缘膜，以调节形成在沟槽中的第一凹部的纵横比，由此形成 在其中形成第二凹部，在半导体衬底的表面上形成第三绝缘膜，以便填充第二凹部。

公开(公告)号：US20080242115A1

公开(公告)日：2008-10-02

申请号：US11902300

申请日：2007-09-20

申请人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

发明人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

IPC分类号： H01L21/31

CPC分类号： H01L29/511 ,  C23C16/30 ,  C23C16/45523 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28229 ,  H01L21/31604 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.

摘要翻译： 一种半导体器件，包括半导体衬底，形成在所述半导体衬底上并包括含有金属元素的氧化硅膜的栅极电介质，所述氧化硅膜含有所述金属元素，所述金属元素包括在其下表面附近的第一区域， 上表面和第一和第二区域之间的第三区域，包含在氧化硅膜中的金属元素在氧化硅膜的厚度方向上具有密度分布，存在于第三区域中的密度分布的峰值， 以及形成在栅极电介质上的电极。