公开(公告)号：US11728137B2

公开(公告)日：2023-08-15

申请号：US17267920

申请日：2019-08-08

Applicant: LAM RESEARCH CORPORATION

Inventor： Yuhou Wang ,  Maolin Long ,  Ying Wu ,  Alexander Miller Paterson

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32183 ,  H01J2237/24564 ,  H01J2237/24585

Abstract: A drive circuit for providing RF power to a component of a substrate processing system includes a plasma source operating at a first frequency. A load includes the component of the substrate processing system. An impedance network connects the plasma source to the load. A current sensor senses current at an output of the plasma source. A voltage sensor senses voltage at the output of the plasma source. A controller includes a tuned frequency calculator configured to calculate a tuned frequency for the plasma source based on the voltage, the current, and a configuration of the impedance network and to adjust the first frequency based on the tuned frequency.

公开(公告)号：US20230154728A1

公开(公告)日：2023-05-18

申请号：US17916643

申请日：2021-04-01

Applicant: Lam Research Corporation

Inventor： Ying Wu ,  Alexander Miller Paterson ,  Neema Rastgar ,  John Drewery

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01J37/32146 ,  H01J37/32568 ,  H01J37/32119 ,  H01J37/32165 ,  H01L21/31122 ,  H01L21/32136 ,  H01J2237/334

Abstract: Multiple, sequential pulses of radiofrequency power are supplied to an electrode of a plasma processing chamber to control a plasma within the plasma processing chamber. Each of the pulses of radiofrequency power includes a first duration over which a first radiofrequency power profile exists, immediately followed by a second duration over which a second radiofrequency power profile exists. The first radiofrequency power profile has greater radiofrequency power than the second radiofrequency power profile. The first duration is less than the second duration. And, the sequential pulses of radiofrequency power are separated from each other by a third duration. A radiofrequency signal generation system is provided to generate and control the multiple, sequential pulses of radiofrequency power.

公开(公告)号：US20230005718A1

公开(公告)日：2023-01-05

申请号：US17942040

申请日：2022-09-09

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Alex Paterson ,  Ying Wu

IPC: H01J37/32

Abstract: Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. The parameter and the frequency are simultaneously pulsed to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.

公开(公告)号：US20210313149A1

公开(公告)日：2021-10-07

申请号：US17347504

申请日：2021-06-14

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Ying Wu ,  Alex Paterson

IPC: H01J37/32 ,  H01L21/683

Abstract: Systems and methods for increasing peak ion energy with a low angular spread of ions are described. In one of the systems, multiple radio frequency (RF) generators that are coupled to an upper electrode associated with a plasma chamber are operated in two different states, such as two different frequency levels, for pulsing of the RF generators. The pulsing of the RF generators facilitates a transfer of ion energy during one of the states to another one of the states for increasing ion energy during the other state to further increase a rate of processing a substrate.

公开(公告)号：US11049726B2

公开(公告)日：2021-06-29

申请号：US15817729

申请日：2017-11-20

Applicant: Lam Research Corporation

Inventor： Zhongkui Tan ,  Qian Fu ,  Ying Wu ,  Qing Xu ,  John Drewery

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/311 ,  H01L21/308 ,  H01L21/3213

Abstract: A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material. A plasma is generated in exposure to the substrate. For a first duration, a bias voltage is applied at the substrate holder at a first bias voltage setting corresponding to a high bias voltage level. For a second duration, after completion of the first duration, a bias voltage is applied at the substrate holder at a second bias voltage setting corresponding to a low bias voltage level. The second bias voltage setting is greater than 0 V. The first and second durations are repeated in an alternating and successive manner for an overall period of time necessary to remove a required amount of the target material exposed on the substrate.

公开(公告)号：US20200286713A1

公开(公告)日：2020-09-10

申请号：US16885083

申请日：2020-05-27

Applicant: Lam Research Corporation

Inventor： Maolin Long ,  Yuhou Wang ,  Ying Wu ,  Alex Paterson

IPC: H01J37/32

Abstract: Frequency tuning for a matchless plasma source is described. To perform the frequency tuning, current is measured at an output of an amplification circuit of the matchless plasma source after a change in a frequency of operation of the matchless plasma source. Upon determining that the current has increased with the change in the frequency of operation, the frequency of operation is further changed until the current has decreased. When the current has decreased, the changed frequency of operation is further modified to be an operational frequency. When the matchless plasma source operates at the operational frequency, the current at the output of the amplification circuit is maximized.

公开(公告)号：US20200176222A1

公开(公告)日：2020-06-04

申请号：US16783721

申请日：2020-02-06

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Alex Paterson ,  Ying Wu

IPC: H01J37/32

Abstract: Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. The parameter and the frequency are simultaneously pulsed to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.

公开(公告)号：US20190066979A1

公开(公告)日：2019-02-28

申请号：US15693134

申请日：2017-08-31

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Ying Wu ,  Alex Paterson

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32146 ,  H01J37/321 ,  H01J37/32183 ,  H01J37/32568 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/6833

Abstract: Systems and methods for increasing peak ion energy with a low angular spread of ions are described. In one of the systems, multiple radio frequency (RF) generators that are coupled to an upper electrode associated with a plasma chamber are operated in two different states, such as two different frequency levels, for pulsing of the RF generators. The pulsing of the RF generators facilitates a transfer of ion energy during one of the states to another one of the states for increasing ion energy during the other state to further increase a rate of processing a substrate.

公开(公告)号：US20180204708A1

公开(公告)日：2018-07-19

申请号：US15408326

申请日：2017-01-17

Applicant: Lam Research Corporation

Inventor： Zhongkui Tan ,  Yiting Zhang ,  Qian Fu ,  Qing Xu ,  Ying Wu ,  Saravanapriyan Sriraman ,  Alex Paterson

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32165 ,  C23C16/0245 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32715 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H05H2001/4667

Abstract: A substrate is positioned on a substrate support structure within a plasma processing volume of an inductively coupled plasma processing chamber. A first radiofrequency signal is supplied from a first radiofrequency signal generator to a coil disposed outside of the plasma processing volume to generate a plasma in exposure to the substrate. A second radiofrequency signal is supplied from a second radiofrequency signal generator to an electrode within the substrate support structure. The first and second radiofrequency signal generators are controlled independent of each other. The second radiofrequency signal has a frequency greater than or equal to about 27 megaHertz. The second radiofrequency signal generates supplemental plasma density at a level of the substrate within the plasma processing volume while generating a bias voltage of less than about 200 volts at the level of the substrate.

公开(公告)号：US10009028B2

公开(公告)日：2018-06-26

申请号：US15683568

申请日：2017-08-22

Applicant: Lam Research Corporation

Inventor： Ying Wu

IPC: H03K19/01 ,  H03K19/003 ,  H04B1/10 ,  H04B1/7136 ,  H01L21/02

CPC classification number: H03K19/00384 ,  H01L21/02252 ,  H01L21/02274 ,  H03K19/00361 ,  H04B1/7136 ,  H04B2001/1072

Abstract: Systems and methods for frequency and match tuning in one state S1 and frequency tuning in another state S2 are described. The systems and methods include determining one or more variables for the states S1 and S2, and tuning a frequency for the state S1 of a radio frequency (RF) generator based on the one or more variables.