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公开(公告)号：US20090225578A1
公开(公告)日：2009-09-10
申请号：US11995072
申请日：2006-07-07
申请人： Makoto Kitabatake
发明人： Makoto Kitabatake
IPC分类号： H02M7/5387 , H01L29/161
CPC分类号： H01L29/7806 , H01L29/0696 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/47 , H01L29/66068
摘要： The present invention provides a semiconductor device and an electric apparatus each of which can realize both high-speed switching operation and energy loss reduction and excels in resistance to current concentration based on a counter electromotive voltage generated by, for example, an inductance load of the electric apparatus. A semiconductor device (100) of the present invention includes: a semiconductor layer (3) made of a first conductivity type wide band-gap semiconductor; a transistor cell (101T) in which a vertical field effect transistor (102) is formed, the vertical field effect transistor (102) causing a charge carrier to move in a thickness direction of the semiconductor layer (3); and a diode cell (101S) in which a schottky diode (103) is formed, the schottky diode (103) being formed such that a schottky electrode (9) forms a schottky junction with the semiconductor layer (3), wherein the semiconductor layer 3 is divided into a plurality of square subregions (101T and 101S) based on virtual border lines (30) in plan view, and includes the subregion (101T) as the transistor cell and the subregion (101S) as the diode cell.
摘要翻译： 本发明提供一种半导体器件和电气设备，其能够基于由例如电感负载产生的反电动势来实现高速开关操作和能量损耗降低，并且具有优异的耐电流集中性 电器。 本发明的半导体器件（100）包括：由第一导电型宽带隙半导体制成的半导体层（3）; 形成垂直场效应晶体管（102）的晶体管单元（101T），使载流子沿半导体层（3）的厚度方向移动的垂直场效应晶体管（102）; 和形成肖特基二极管（103）的二极管单元（101S），肖特基二极管（103）形成为使得肖特基电极（9）与半导体层（3）形成肖特基结，其中半导体层 在平面图中，图3中的虚拟边界线（30）被分成多个平方子区域（101T和101S），并且包括作为晶体管单元的子区域（101T）和作为二极管单元的子区域（101S）。
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公开(公告)号：US06995473B2
公开(公告)日：2006-02-07
申请号：US10736672
申请日：2003-12-17
申请人： Makoto Kitabatake , Kazuhiko Asada , Hidekazu Yamashita , Nobuyoshi Nagagata , Kazuhiro Nobori , Hideki Omori , Masanori Ogawa
发明人： Makoto Kitabatake , Kazuhiko Asada , Hidekazu Yamashita , Nobuyoshi Nagagata , Kazuhiro Nobori , Hideki Omori , Masanori Ogawa
IPC分类号： H01L23/48
CPC分类号： H01L25/074 , G09G3/294 , G09G3/2965 , G09G2330/028 , H01L27/0694 , H01L2224/0603 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2924/01019 , H01L2924/01079 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19041 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要： At least two switching devices each including a substrate formed of a wide bandgap semiconductor, source and gate electrodes formed in a principal surface side of the substrate, and a drain electrode formed on the back surface of the substrate are stacked so that respective upper surface sides of the switching face each other.
摘要翻译： 每个包括由宽带隙半导体形成的衬底和形成在衬底的主表面侧的源极和栅电极以及形成在衬底的背面上的漏电极的至少两个开关器件被堆叠，使得各自的上表面侧 的切换面彼此。
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公开(公告)号：US06995397B2
公开(公告)日：2006-02-07
申请号：US10466353
申请日：2002-09-17
申请人： Kenya Yamashita , Makoto Kitabatake , Osamu Kusumoto , Kunimasa Takahashi , Masao Uchida , Ryoko Miyanaga
发明人： Kenya Yamashita , Makoto Kitabatake , Osamu Kusumoto , Kunimasa Takahashi , Masao Uchida , Ryoko Miyanaga
IPC分类号： H01L31/072
CPC分类号： H01L29/66068 , H01L29/105 , H01L29/1608 , H01L29/365 , H01L29/7725 , H01L29/7828 , H01L29/7838
摘要： A semiconductor device having an accumulation channel SiC-MISFET structure includes a p-type SiC layer 10 formed on an SiC substrate, an n-type channel layer 20, a gate insulating film 11, a gate electrode 12, and n-type source and drain layers 13a and 13b. The channel layer 20 includes an undoped layer 22 and a δ doped layer 21 which is formed in the vicinity of the lower end of the undoped layer 22. Since the channel layer 20 includes the high-concentration δ doped layer 21 in its deeper portion, the electric field in the surface region of the channel layer is weakened, thereby allowing the current driving force to increase.
摘要翻译： 具有堆积通道SiC-MISFET结构的半导体器件包括形成在SiC衬底上的p型SiC层10，n型沟道层20，栅极绝缘膜11，栅电极12和n型源， 漏极层13a和13b。 沟道层20包括未掺杂层22和形成在未掺杂层22的下端附近的δ掺杂层21.由于沟道层20在其较深部分包括高浓度δ掺杂层21， 沟道层的表面区域的电场减弱，从而允许电流驱动力增加。
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54.发明授权Electron emitting device, electron emitting source, image display, and method for producing them 有权电子发射器件，电子发射源，图像显示器及其制造方法公开(公告)号：US06645402B1
公开(公告)日：2003-11-11
申请号：US09582801
申请日：2000-06-30
IPC分类号： H01J130
CPC分类号： B82Y10/00 , H01J1/304 , H01J9/025 , H01J2201/30403 , H01J2201/30469 , H01J2201/319
摘要： An electron emitting device includes at least a first electrode and an electron emitting section provided on the first electrode. The electron emitting section is formed of a particle or an aggregate of particles. The particle contains a carbon material having a carbon six-membered ring structure. The carbon material having a carbon six-membered ring structure contains, for example, graphite or a carbon nanotube as a main component.
摘要翻译： 电子发射器件至少包括设置在第一电极上的第一电极和电子发射部分。 电子发射部分由颗粒或颗粒聚集体形成。 颗粒含有具有碳六元环结构的碳材料。 具有碳六元环结构的碳材料包含例如石墨或碳纳米管作为主要成分。
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55.发明授权Electron emitting device, method of producing the same, and method of driving the same; and image display comprising the electron emitting device and method of producing the same 有权电子发射器件及其制造方法及其驱动方法。 以及包括电子发射器件的图像显示器及其制造方法公开(公告)号：US06635979B1
公开(公告)日：2003-10-21
申请号：US09601907
申请日：2000-09-25
IPC分类号： H01J102
CPC分类号： B82Y10/00 , H01J1/304 , H01J1/312 , H01J9/022 , H01J2329/00
摘要： An electron emitting device includes at least an electron transporting member (1), an electron emitting member (3), and an electric field concentration region (2) formed between the electron transporting member (1) and the electron emitting member (3). For example, the electron transporting member (1) may be a conductive layer, the electric field concentration region (2) may be formed of an insulating layer formed on the conductive layer, and the electron emitting member (3) may be formed of particles provided on the insulating layer. Due to the electric field concentration in the electric field concentration region (2), electrons are easily injected from the electron transporting member (1) to the electron emitting member (3).
摘要翻译： 电子发射器件至少包括形成在电子传输部件（1）和电子发射部件（3）之间的电子传输部件（1），电子发射部件（3）和电场集中区域（2）。 例如，电子传输部件（1）可以是导电层，电场集中区域（2）可以由形成在导电层上的绝缘层形成，并且电子发射部件（3）可以由颗粒形成 设置在绝缘层上。 由于电场浓度区域（2）中的电场浓度，电子容易从电子传输部件（1）注入到电子发射部件（3）。
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公开(公告)号：US06323053B1
公开(公告)日：2001-11-27
申请号：US09395175
申请日：1999-09-14
IPC分类号： H01L2100
CPC分类号： H01L21/0237 , H01L21/02381 , H01L21/02439 , H01L21/02485 , H01L21/0254 , H01L21/02546 , H01L21/02658
摘要： As a pretreatment of a substrate, a substrate of Si having the (111) surface orientation as a main surface is soaked in hydrofluoric acid, so as to form a H atomic layer for terminating dangling bonds on the main surface of the substrate. Then, the substrate is placed in a highly evacuated growth chamber in an MBE system, and a Ga molecular beam and a Se molecular beam are supplied onto the H atomic layer on the substrate, so as to grow a buffer layer of GaSe, that is, a van der Waals crystal. Next, with the supply of the Se molecular beam stopped, a N2 gas activated by using radio frequency or electron cyclotron resonance is supplied instead as a nitrogen source onto the buffer layer on the substrate, so as to form a semiconductor layer of GaN.
摘要翻译： 作为基板的预处理，将具有（111）表面取向作为主表面的Si的基板浸渍在氢氟酸中，以形成用于在基板的主表面上终止悬挂键的H原子层。 然后，将基板放置在MBE系统中的高度抽真空的生长室中，并将Ga分子束和Se分子束提供到衬底上的H原子层上，以便生长GaSe的缓冲层，即 ，范德华晶体。 接下来，随着Se分子束的供给停止，通过使用射频或电子回旋共振来激活的N 2气被代替地作为氮源提供到衬底上的缓冲层上，以形成GaN的半导体层。
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57.发明授权公开(公告)号：US06270573B1
公开(公告)日：2001-08-07
申请号：US09297129
申请日：1999-04-26
IPC分类号： C30B2518
CPC分类号： H01L29/1608 , C30B23/02 , C30B29/36 , H01L29/045 , H01L29/1075 , H01L29/66068 , Y10S117/913 , Y10T428/12576 , Y10T428/12674
摘要： A silicon carbide thin film is epitaxially grown by an MBE or the like method with silicon atoms 2 being maintained to be in excess of carbon atoms on a growth surface 1a of a silicon carbide crystal in a substrate 1. A silicon carbide substrate with a good crystallinity is thereby achieved at a low temperature with a good reproducibility. This crystal growth is possible at a low temperature of 1300° C. or lower, and the productions of a high-concentration doped film, a selectively grown film, and a grown film of a cubic silicon carbide on a hexagonal crystal are achieved. In crystallizing a cubic silicon carbide on a hexagonal crystal, the use of an off-cut surface inclined towards a direction is effective to prevent an occurrence of twin.
摘要翻译： 通过在基板1中的碳化硅晶体的生长面1a上保持硅原子2保持为超过碳原子的MBE等外观生长碳化硅薄膜。具有良好的碳化硅基板 从而在低温下实现了结晶度的良好的再现性。 可以在1300℃以下的低温下进行晶体生长，可以实现六方晶的高浓度掺杂膜，选择性生长膜和立方碳化硅生长膜的制备。 在六方晶上结晶立方碳化硅时，使用朝向<1 {overscore（1）} 00>方向倾斜的偏斜表面是有效的，以防止双胞胎发生。
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公开(公告)号：US06214107B1
公开(公告)日：2001-04-10
申请号：US08993817
申请日：1997-12-18
申请人： Makoto Kitabatake
发明人： Makoto Kitabatake
IPC分类号： C30B2502
CPC分类号： H01L29/872 , C30B29/36 , C30B33/00 , H01L21/0445 , H01L21/0475 , H01L21/0485 , H01L21/049 , H01L21/0495 , H01L29/1608 , H01L29/267 , H01L29/45 , H01L29/47 , H01L29/6606
摘要： A method for manufacturing a device of silicon carbide (SiC) and a single crystal thin film, which are wide band gap semiconductor materials and can be applied to semiconductor devices such as high power devices, high temperature devices, and environmentally resistant devices, is provided by heating a silicon carbide crystal in an oxygen atmosphere to form a silicon (di)oxide thin film on a silicon carbide crystal surface, and etching the silicon (di)oxide thin film formed on the silicon carbide crystal surface to prepare a clean SiC surface. The above SiC device comprises a clean surface having patterned steps and terraces, has a surface defect density of 108 cm−2 or less, or has at least a layered structure in which an n-type silicon carbide crystal is formed on an n-type Si substrate surface.
摘要翻译： 提供了一种制造宽带隙半导体材料的碳化硅（SiC）和单晶薄膜的器件的方法，可以应用于诸如大功率器件，高温器件和耐环境器件的半导体器件 通过在氧气氛中加热碳化硅晶体以在碳化硅晶体表面上形成硅（di）氧化物薄膜，并蚀刻形成在碳化硅晶体表面上的硅（di）氧化物薄膜，以制备清洁的SiC表面 。 上述SiC器件包括具有图案化台阶和台阶的清洁表面，其表面缺陷密度为108cm -2以下，或至少具有在n型上形成n型碳化硅晶体的层状结构 Si衬底表面。
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公开(公告)号：US6110813A
公开(公告)日：2000-08-29
申请号：US54498
申请日：1998-04-03
IPC分类号： H01L21/04 , H01L21/8258 , H01L21/3205
CPC分类号： H01L29/6606 , H01L21/0485 , H01L21/0495 , H01L21/8258 , H01L29/66068 , H01L21/268 , Y10S438/931
摘要： A first metal film and a second metal film, both of which are made of Ni or the like, are deposited on the upper surface of a substrate made of SiC. In such a state, the interface between the first metal film and the substrate and the interface between the second metal film and the substrate both form a Schottky contact. Next, laser light is irradiated from above the upper surface of the substrate only onto the first metal film on the substrate after the diameter of the top end of the laser light has been reduced. Thus, since the metal-semiconductor interface between the first metal film and the substrate is turned into an alloy owing to the energy of the laser light without heating the entire substrate, an ohmic contact can be formed in the interface between the first metal film and the substrate. As a result, an ohmic electrode can be constituted by the first metal film.
摘要翻译： 由Ni等制成的第一金属膜和第二金属膜沉积在由SiC制成的基板的上表面上。 在这种状态下，第一金属膜与衬底之间的界面以及第二金属膜与衬底之间的界面都形成肖特基接触。 接下来，激光的顶端的直径减小之后，从基板的上表面的上方仅将激光照射到基板上的第一金属膜上。 因此，由于第一金属膜和基板之间的金属 - 半导体界面由于激光的能量而变为合金，而不加热整个基板，因此可以在第一金属膜与第一金属膜之间的界面中形成欧姆接触 底物。 结果，可以由第一金属膜构成欧姆电极。
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公开(公告)号：US6083354A
公开(公告)日：2000-07-04
申请号：US517460
申请日：1995-08-21
CPC分类号： C01B31/065
摘要： The object of the present invention is to provide a treatment method to remove lattice defects and non-diamond elements that exist in a diamond or a diamond thin film.The treatment method whereby the aforementioned object is achieved is to have the diamond or the diamond thin film irradiated by ultra-violet light or heated in an oxygen ambient.According to said treatment method, it has become possible to obtain a diamond or a diamond thin film that is free from the adverse effects of lattice defects and non-diamond elements.
摘要翻译： 本发明的目的是提供一种去除存在于金刚石或金刚石薄膜中的晶格缺陷和非金刚石元素的处理方法。 实现上述目的的处理方法是使金刚石或金刚石薄膜用紫外线照射或在氧气氛中加热。 根据所述处理方法，可以获得没有晶格缺陷和非金刚石元素的不利影响的金刚石或金刚石薄膜。
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