公开(公告)号：US06323053B1

公开(公告)日：2001-11-27

申请号：US09395175

申请日：1999-09-14

申请人： Takashi Nishikawa ,  Yoichi Sasai ,  Makoto Kitabatake

发明人： Takashi Nishikawa ,  Yoichi Sasai ,  Makoto Kitabatake

IPC分类号： H01L2100

CPC分类号： H01L21/0237 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02485 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02658

摘要： As a pretreatment of a substrate, a substrate of Si having the (111) surface orientation as a main surface is soaked in hydrofluoric acid, so as to form a H atomic layer for terminating dangling bonds on the main surface of the substrate. Then, the substrate is placed in a highly evacuated growth chamber in an MBE system, and a Ga molecular beam and a Se molecular beam are supplied onto the H atomic layer on the substrate, so as to grow a buffer layer of GaSe, that is, a van der Waals crystal. Next, with the supply of the Se molecular beam stopped, a N2 gas activated by using radio frequency or electron cyclotron resonance is supplied instead as a nitrogen source onto the buffer layer on the substrate, so as to form a semiconductor layer of GaN.

摘要翻译： 作为基板的预处理，将具有（111）表面取向作为主表面的Si的基板浸渍在氢氟酸中，以形成用于在基板的主表面上终止悬挂键的H原子层。 然后，将基板放置在MBE系统中的高度抽真空的生长室中，并将Ga分子束和Se分子束提供到衬底上的H原子层上，以便生长GaSe的缓冲层，即 ，范德华晶体。 接下来，随着Se分子束的供给停止，通过使用射频或电子回旋共振来激活的N 2气被代替地作为氮源提供到衬底上的缓冲层上，以形成GaN的半导体层。

公开(公告)号：US06169296A

公开(公告)日：2001-01-02

申请号：US09176906

申请日：1998-10-22

申请人： Satoshi Kamiyama ,  Shigeo Yoshii ,  Ryoko Miyanaga ,  Takashi Nishikawa ,  Tohru Saitoh ,  Yoichi Sasai

发明人： Satoshi Kamiyama ,  Shigeo Yoshii ,  Ryoko Miyanaga ,  Takashi Nishikawa ,  Tohru Saitoh ,  Yoichi Sasai

IPC分类号： H01L3300

CPC分类号： H01L33/40 ,  H01L33/145 ,  H01L33/38 ,  H01L33/42

摘要： The light-emitting diode device of the present invention includes an active layer, a p-type contact layer, a Schottky electrode and an ohmic electrode. The active layer is formed over an n-type semiconductor substrate. The contact layer is formed over the active layer. The Schottky electrode is selectively formed on the contact layer and makes Schottky contact with the contact layer. The ohmic electrode is formed to surround the Schottky electrode on the contact layer and to be electrically connected to the Schottky electrode and transmits the light emitted from the active layer.

摘要翻译： 本发明的发光二极管器件包括有源层，p型接触层，肖特基电极和欧姆电极。 有源层形成在n型半导体衬底上。 接触层形成在有源层上。 肖特基电极选择性地形成在接触层上并与接触层进行肖特基接触。 欧姆电极形成为围绕接触层上的肖特基电极并与肖特基电极电连接并透射从有源层发射的光。

公开(公告)号：US5619520A

公开(公告)日：1997-04-08

申请号：US523189

申请日：1995-09-05

申请人： Yoichi Sasai ,  Nobuyuki Uemura ,  Satoshi Kamiyama ,  Minoru Kubo ,  Takashi Nishikawa

发明人： Yoichi Sasai ,  Nobuyuki Uemura ,  Satoshi Kamiyama ,  Minoru Kubo ,  Takashi Nishikawa

IPC分类号： H01S5/223 ,  H01S5/347 ,  H01S3/18

CPC分类号： B82Y20/00 ,  H01S5/347 ,  H01S5/2231

摘要： A semiconductor laser of this invention includes: a semiconductor substrate; a first cladding layer made of first conductivity type ZnMgSSe, which is held by the semiconductor substrate and lattice-matches with the semiconductor substrate; a stripe-shaped second cladding layer made of second conductivity type ZnMgSSe lattice-matching with the semiconductor substrate; a light-emitting layer including a first and a second light guiding layers made of Zn.sub.1-x Mg.sub.x S.sub.1-y Se.sub.y (0.ltoreq.x

摘要翻译： 本发明的半导体激光器包括：半导体衬底; 由第一导电型ZnMgSSe制成的第一包层，其由半导体衬底保持并与半导体衬底晶格匹配; 由与半导体基板的第二导电型ZnMgSSe晶格匹配构成的条状的第二包层; 包括由Zn1-xMgxS1-ySey（0≤x≤1,0

公开(公告)号：US6087725A

公开(公告)日：2000-07-11

申请号：US161498

申请日：1998-09-28

申请人： Shigeo Yoshii ,  Yoichi Sasai ,  Satoshi Kamiyama ,  Tohru Saitoh ,  Takashi Nishikawa ,  Ryoko Miyanaga

发明人： Shigeo Yoshii ,  Yoichi Sasai ,  Satoshi Kamiyama ,  Tohru Saitoh ,  Takashi Nishikawa ,  Ryoko Miyanaga

IPC分类号： H01L33/28 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L33/28

摘要： On a substrate of n-type GaAs, an n-type cladding layer of n-type Zn.sub.0.9 Mg.sub.0.1 S.sub.0.13 Se.sub.0.87, an n-type light guiding layer of n-type ZnS.sub.0.06 Se.sub.0.94, an active layer of ZnCdSe and a p-type light guiding layer of p-type ZnS.sub.0.06 Se.sub.0.94 are successively formed. On the p-type light guiding layer, a p-type contact structure is formed. The p-type contact structure includes a first layer of p-type ZnS.sub.0.31 Se.sub.0.54 Te.sub.0.15, a second layer of ZnS.sub.0.47 Se.sub.0.28 Te.sub.0.25, a third layer of p-type ZnS.sub.0.65 Te.sub.0.35, a fourth layer of p-type ZnS.sub.0.5 Te.sub.0.5 and a fifth layer of p-type ZnTe.

摘要翻译： 在n型GaAs的衬底上，n型Zn0.9Mg0.1S0.13Se0.87的n型覆层，n型ZnS0.06Se0.94的n型导光层，n型ZnS0.06Se0.94的有源层 ZnCdSe和p型ZnS0.06Se0.94的p型导光层依次形成。 在p型导光层上形成p型接触结构。 p型接触结构包括第一层p型ZnS0.31Se0.54Te0.15，第二层ZnS0.47Se0.28Te0.25，第三层p型ZnS0.65Te0.35，第四层 的p型ZnS0.5Te0.5和第五层p型ZnTe。

公开(公告)号：US5323262A

公开(公告)日：1994-06-21

申请号：US11136

申请日：1993-01-29

申请人： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Tetsuo Taniuchi ,  Yoichi Sasai

发明人： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Tetsuo Taniuchi ,  Yoichi Sasai

IPC分类号： G02B6/12 ,  G02B6/13 ,  G02F1/355 ,  G02F1/37 ,  G02F1/377 ,  G02F1/35

CPC分类号： G02F1/3558 ,  G02F1/377

摘要： A wavelength conversion device exhibiting an excellent wavelength conversion efficiency is provided by forming it in such a manner that an LiTaO.sub.3 substrate is subjected to a proton exchange treatment to form a proton-exchange layer before the proton-exchange layer is subjected to heat treatment to form a domain-inverted structure. Heat treatment is performed at a high temperature rising speed to prevent the thermal diffusion of the proton-exchange layer so that the expansion of the domain-inverted structure to be formed in the proton-exchange layer is restrained. As a result, a higher harmonic wave wavelength conversion device can be provided.

摘要翻译： 通过使LiTaO 3基板进行质子交换处理以形成质子交换层，在质子交换层进行热处理以形成之前，形成具有优异的波长转换效率的波长转换元件 域反转结构。 以高温上升速度进行热处理，以防止质子交换层的热扩散，从而抑制在质子交换层中形成的畴反转结构的膨胀。 结果，可以提供高次谐波波长转换装置。

公开(公告)号：US4702781A

公开(公告)日：1987-10-27

申请号：US787369

申请日：1985-10-15

申请人： Yoichi Sasai ,  Minoru Kubo

发明人： Yoichi Sasai ,  Minoru Kubo

IPC分类号： C30B19/10 ,  C30B19/00 ,  C30B19/06 ,  H01L21/208

CPC分类号： C30B19/063 ,  H01L21/02392 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02625 ,  H01L21/02628

摘要： Disclosed is a liquid phase epitaxial growth method using a slider having a recess which receives a semiconductor substrate, and a growth boat having a solution holder which holds plural kinds of solutions for use in epitaxial growth, in which method, epitaxial growth of a layer having thickness of less than 500 .ANG. is carried out under the condition that the slider is sliding in one direction, i.e., without stopping the sliding movement of the slider. Thereby, the thickness of the growth layer is controlled by controlling the time when the substrate contacts the solution, or by the sliding speed of the slider.

摘要翻译： 公开了使用具有容纳半导体衬底的凹部的滑块的液相外延生长方法，以及具有保持多种用于外延生长的溶液的溶液保持器的生长舟皿，其中， 在滑块在一个方向上滑动的条件下，即不停止滑动件的滑动运动的条件下，执行小于500的厚度ANGSTROM。 由此，通过控制基板与溶液接触的时间或滑块的滑动速度来控制生长层的厚度。

公开(公告)号：US06498094B2

公开(公告)日：2002-12-24

申请号：US09345495

申请日：1999-07-01

申请人： Keisaku Nakao ,  Yoichi Sasai ,  Yuji Judai ,  Atsushi Noma

发明人： Keisaku Nakao ,  Yoichi Sasai ,  Yuji Judai ,  Atsushi Noma

IPC分类号： H01L214763

CPC分类号： H01L28/65 ,  H01L27/10852 ,  H01L28/55

摘要： An underlying conductive film made of iridium and having a thickness of about 0.1 &mgr;m is formed in a contact hole formed in an insulating film covering a transistor formed in a substrate, except in the top portion of the contact hole. The underlying conductive film covers the sidewall portions of the contact hole and the top surface of the drain region but does not completely fill in the contact hole. A plug made of platinum is filled in the contact hole up to the top portion thereof. Over the contact hole of the insulating film, there is formed a capacitor composed of a lower electrode made of platinum, a capacitor insulating film made of SrBi2Ta2O9, and an upper electrode made of platinum in contact relation with the respective upper ends of the underlying conductive film and the plug.

摘要翻译： 在形成在基板上的晶体管的绝缘膜中形成的接触孔中形成由铱构成的厚度约0.1μm的底层导电膜，除了接触孔的顶部之外。 底层导电膜覆盖接触孔的侧壁部分和漏极区域的顶表面，但不完全填充在接触孔中。 由铂制成的塞子填充到接触孔中直到其顶部。 在绝缘膜的接触孔上形成由铂制下部电极构成的电容器，由SrBi 2 Ta 2 O 9构成的电容绝缘膜，以及由铂的上部电极与下层导体 电影和插头。

公开(公告)号：US5822347A

公开(公告)日：1998-10-13

申请号：US589488

申请日：1996-01-22

申请人： Toshiya Yokogawa ,  Shigeo Yoshii ,  Yoichi Sasai

发明人： Toshiya Yokogawa ,  Shigeo Yoshii ,  Yoichi Sasai

IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/28 ,  H01L33/46 ,  H01S5/183 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/327 ,  H01S5/347 ,  H01S3/19 ,  H01L29/22

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0083 ,  H01L33/0087 ,  H01L33/465 ,  H01S5/18341 ,  H01S5/327 ,  H01S5/347 ,  H01L33/105 ,  H01S2301/166 ,  H01S5/0207 ,  H01S5/02461 ,  H01S5/18308 ,  H01S5/18369 ,  H01S5/2063 ,  H01S5/2081 ,  H01S5/2211 ,  H01S5/2214 ,  H01S5/2231

摘要： In a II-VI group semiconductor laser, on an n type GaAs substrate, an n type ZnSe layer, a multiquantum well layer of a ZnCdSe well layer and a ZnSe barrier layer, and a p type ZnSe layer are deposited in this order. A polycrystalline ZnO layer is provided on both sides of the p type ZnSe layer for constricting current. Multifilm reflecting mirrors, respectively constituted with a polycrystalline SiO.sub.2 layer and a polycrystalline TiO.sub.2 layer, for obtaining laser oscillation are provided on the p type ZnSe layer as well as on a surface of the n type ZnSe layer exposed by etching the GaAs substrate. Furthermore, a p type AuPd electrode and an n type AuGeNi electrode are respectively provided. Alternatively, on an n type GaAs substrate, an n type ZnSe epitaxial layer, an n type ZnMgSSe cladding layer, an n type ZnSSe optical waveguide layer, a ZnCdSe active layer, a p type ZnSSe optical waveguide layer, a p type ZnMgSSe cladding layer, a p type ZnTe contact layer and a polycrystalline ZnO burying layer are respectively formed. Furthermore, a p type AuPd electrode and an n type In electrode are respectively provided.

摘要翻译： 在II-VI族半导体激光器中，在n型GaAs衬底上依次沉积n型ZnSe层，ZnCdSe阱层的多量子阱层和ZnSe阻挡层以及p型ZnSe层。 在p型ZnSe层的两侧设置多晶ZnO层，用于收缩电流。 在p型ZnSe层以及通过蚀刻GaAs衬底暴露的n型ZnSe层的表面上，设置分别由用于获得激光振荡的多晶SiO 2层和多晶TiO 2层构成的多片反射镜。 此外，分别设置p型AuPd电极和n型AuGeNi电极。 或者，在n型GaAs衬底上，n型ZnSe外延层，n型ZnMgSSe覆层，n型ZnSSe光波导层，ZnCdSe有源层，ap型ZnSSe光波导层，ap型ZnMgSSe覆层，ap 分别形成ZnTe接触层和多晶ZnO掩埋层。 此外，分别设置p型AuPd电极和n型In电极。

公开(公告)号：US5705831A

公开(公告)日：1998-01-06

申请号：US415540

申请日：1995-04-03

申请人： Nobuyuki Uemura ,  Minoru Kubo ,  Yoichi Sasai ,  Kazuhiro Ohkawa ,  Satoshi Kamiyama ,  Takeshi Uenoyama

发明人： Nobuyuki Uemura ,  Minoru Kubo ,  Yoichi Sasai ,  Kazuhiro Ohkawa ,  Satoshi Kamiyama ,  Takeshi Uenoyama

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/28 ,  H01L29/22 ,  H01L31/0256 ,  H01L31/0296

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0087 ,  H01L33/06

摘要： According to one aspect of the invention, a crystal-growing method for forming a II-VI single crystalline semiconductor expressed by Zn.sub.1-x Cd.sub.x Se (where 0

摘要翻译： 根据本发明的一个方面，提供了由Zn1-xCdxSe（其中0

公开(公告)号：US5221310A

公开(公告)日：1993-06-22

申请号：US796648

申请日：1991-11-22

申请人： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Tetsuo Taniuchi ,  Yoichi Sasai

发明人： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Tetsuo Taniuchi ,  Yoichi Sasai

IPC分类号： G02B6/12 ,  G02B6/13 ,  G02F1/355 ,  G02F1/37 ,  G02F1/377

CPC分类号： G02F1/3558 ,  G02F1/377

摘要： A wavelength conversion device exhibiting an excellent wavelength conversion efficiency is provided by forming it in such a manner that an LiTaO.sub.3 substrate is subjected to a proton exchange treatment to form a proton-exchange layer before the proton-exchange layer is subjected to heat treatment to form a domain-inverted structure. Heat treatment is performed at a high temperature rising speed to prevent the thermal diffusion of the proton-exchange layer so that the expansion of the domain-inverted structure to be formed in the proton-exchange layer is restrained. As a result, a higher harmonic wave wavelength conversion device can be provided.

摘要翻译： 通过使LiTaO 3基板进行质子交换处理以形成质子交换层，在质子交换层进行热处理以形成之前，形成具有优异的波长转换效率的波长转换元件 域反转结构。 以高温上升速度进行热处理，以防止质子交换层的热扩散，从而抑制在质子交换层中形成的畴反转结构的膨胀。 结果，可以提供高次谐波波长转换装置。