公开(公告)号：US4687435A

公开(公告)日：1987-08-18

申请号：US717882

申请日：1985-03-29

申请人： Takashi Matsuzaka ,  Toshihiko Saito ,  Satoshi Hisaoka

发明人： Takashi Matsuzaka ,  Toshihiko Saito ,  Satoshi Hisaoka

IPC分类号： F23C15/00 ,  F23C11/04

CPC分类号： F23C15/00 ,  Y10T137/7861

摘要： A pulse combustor has a casing in which a combustion chamber is defined. Air is supplied to the combustion chamber through an air supply pipe. A valve mechanism for controlling the air supply to the chamber is provided in the air supply pipe. The valve mechanism has a base plate with a plurality of air supply holes for the passage of air, and a flapper valve for opening and closing the air supply holes in accordance with the change of pressure inside the chamber. The flapper valve is composed of a plurality of ring-shaped segments with different diameters. These segments are arranged concentrically with one another.

摘要翻译： 脉冲燃烧器具有限定燃烧室的壳体。 空气通过供气管道供应到燃烧室。 用于控制向腔室供气的阀机构设置在供气管中。 阀机构具有基板，其具有用于空气通过的多个供气孔，以及根据室内的压力变化来打开和关闭空气供给孔的挡板阀。 挡板阀由具有不同直径的多个环形段组成。 这些片段彼此同心地排列。

公开(公告)号：US4472132A

公开(公告)日：1984-09-18

申请号：US379946

申请日：1982-05-19

申请人： Satoshi Hisaoka ,  Toshihiko Saito ,  Moriyoshi Sakamoto

发明人： Satoshi Hisaoka ,  Toshihiko Saito ,  Moriyoshi Sakamoto

IPC分类号： F23C15/00 ,  B05C5/00

CPC分类号： F23C15/00

摘要： A pulse combustor comprises a throttle plate provided in a cylindrical body for dividing the interior of the body into a combustion chamber and a mixture chamber and having a throttle hole, gas suction holes communicating with the combustion chamber, air suction holes communicating with the combustion chamber, igniting plug provided in the combustion chamber for explosing and burning the mixture gas of the air and the fuel gas therein, and valve plate provided in the mixture chamber for shutting off the communication of the gas suction holes and air suction holes with the mixture chamber when the pressure in the mixture chamber becomes positive as the mixture gas is exploded and burnt and enabling the communication when the pressure in the mixture chamber becomes negative.

摘要翻译： 脉冲燃烧器包括设置在圆筒体中的节流板，用于将主体内部分成燃烧室和混合室，并具有节流孔，与燃烧室连通的气体吸入孔，与燃烧室连通的空气吸入孔 设置在燃烧室内的点火塞，用于对其中的空气和燃料气体的混合气体进行爆炸和燃烧;以及设置在混合室中的阀板，用于切断气体吸入孔和空气吸入孔与混合室的连通 当混合气体中的压力分解并燃烧时，混合室中的压力变为正，并且当混合室中的压力变为负值时能够进行连通。

公开(公告)号：US4457690A

公开(公告)日：1984-07-03

申请号：US451420

申请日：1982-12-20

申请人： Toshihiko Saito ,  Fusao Hirasawa

发明人： Toshihiko Saito ,  Fusao Hirasawa

IPC分类号： F23N5/12 ,  F23C15/00 ,  F23M11/04 ,  F23C11/04

CPC分类号： F23C15/00 ,  F23M11/045

摘要： In a pulse burner of the type wherein an air-fuel mixture in a combustion chamber is explosively burnt by an ignition plug and resulting flame is detected by a flame detector to control the operation of the pulse burner, there is used a flame detector which detects electric current flowing in the flame instead of a thermostat secured to a side wall of the combustion chamber.

摘要翻译： 在这种类型的脉冲燃烧器中，其中燃烧室中的空气燃料混合物被火花塞爆炸性燃烧，并且由火焰检测器检测到火焰以控制脉冲燃烧器的操作，使用火焰检测器，其检测 在火焰中流动的电流代替固定在燃烧室的侧壁上的恒温器。

公开(公告)号：US09299723B2

公开(公告)日：2016-03-29

申请号：US13107270

申请日：2011-05-13

申请人： Toshihiko Saito

发明人： Toshihiko Saito

IPC分类号： H01L27/12 ,  G11C5/00 ,  G11C7/02 ,  G11C11/404 ,  H01L27/108 ,  H01L27/115 ,  H01L49/02 ,  G11C16/04 ,  G11C16/18 ,  G11C16/34

CPC分类号： H01L27/1225 ,  G11C5/005 ,  G11C7/02 ,  G11C11/404 ,  G11C16/0433 ,  G11C16/18 ,  G11C16/349 ,  H01L27/10873 ,  H01L27/11517 ,  H01L27/1156 ,  H01L27/1255 ,  H01L28/60

摘要： One object is to propose a memory device in which a period in which data is held can be ensured and memory capacity per unit area can be increased. The memory device includes a memory element, a transistor including an oxide semiconductor in an active layer for control of accumulating, holding, and discharging charge in the memory element, and a capacitor connected to the memory element. At least one of a pair of electrodes of the capacitor has a light-blocking property. Further, the memory device includes a light-blocking conductive film or a light-blocking insulating film. The active layer is positioned between the electrode having a light-blocking property and the light-blocking conductive film or the light-blocking insulating film.

摘要翻译： 一个目的是提出一种存储装置，其中可以确保保持数据的周期，并且可以增加每单位面积的存储容量。 存储器件包括存储元件，包括用于控制存储元件中的电荷的累积，保持和放电的有源层中的氧化物半导体的晶体管以及连接到存储元件的电容器。 电容器的一对电极中的至少一个具有阻光性。 此外，存储器件包括遮光导电膜或遮光绝缘膜。 有源层位于具有阻光性的电极和遮光导电膜或遮光绝缘膜之间。

公开(公告)号：US09203478B2

公开(公告)日：2015-12-01

申请号：US13070517

申请日：2011-03-24

申请人： Toshihiko Saito

发明人： Toshihiko Saito

IPC分类号： H01F38/14 ,  H04B5/00 ,  H02J5/00 ,  H02J7/02

CPC分类号： H04B5/0093 ,  H01F38/14 ,  H02J5/005 ,  H02J7/025 ,  H02J50/20 ,  H02J50/23 ,  H02J50/40 ,  H04B5/0037

摘要： An object of the present invention is to provide a highly reliable power supply device which can withstand long-term use. Another object of the present invention is to provide a power supply device with reduced power consumption. The power supply device includes a cell including an antenna and a switch and performing position detection operation and power feeding operation; a high-frequency wave supply circuit; a switch control circuit; and a potential detecting circuit. One electrode of the antenna is connected to the high-frequency wave supply circuit through the switch, and the other thereof is connected to the potential detecting circuit. By the position detection operation, whether there is a power receiving device which gets close to a cell or not is detected. Only when the power receiving device is detected, power is supplied by the power feeding operation.

摘要翻译： 本发明的目的是提供一种能够经受长期使用的高度可靠的供电装置。 本发明的另一个目的是提供一种降低功耗的电源装置。 电源装置包括具有天线和开关的电池，并进行位置检测动作和供电动作; 高频波供电电路; 开关控制电路; 和电位检测电路。 天线的一个电极通过开关连接到高频波供电电路，另一个连接到电位检测电路。 通过位置检测操作，检测是否存在接近单元的电力接收装置。 只有在检测到电力接收装置的情况下，才能通过供电操作来供电。

公开(公告)号：US09129703B2

公开(公告)日：2015-09-08

申请号：US13197845

申请日：2011-08-04

申请人： Toshihiko Saito

发明人： Toshihiko Saito

IPC分类号： G11C11/34 ,  G11C11/406 ,  G11C11/405 ,  G11C16/04 ,  G11C16/26 ,  G11C16/34

CPC分类号： G11C11/407 ,  G11C11/405 ,  G11C11/40615 ,  G11C16/0433 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/3431

摘要： A method for driving a semiconductor memory device including a transistor with low leakage current between a source and a drain in an off state and capable of storing data for a long time is provided. In a matrix including a plurality of memory cells in each of which a drain of a write transistor, a gate of an element transistor, and one electrode of a capacitor are connected, a gate of the write transistor is connected to a write word line, and the other electrode of the capacitor is connected to a read word line. The amount of charge stored in the capacitor is checked by changing the potential of the read word line, and if the amount of charge has decreased beyond a predetermined amount, the memory cell is refreshed.

摘要翻译： 提供了一种用于驱动半导体存储器件的方法，该半导体存储器件包括在断开状态下的源极和漏极之间具有低漏电流的晶体管，并且能够长时间存储数据。 在包括写入晶体管的漏极，元件晶体管的栅极和电容器的一个电极的多个存储单元的矩阵中，写入晶体管的栅极连接到写入字线， 并且电容器的另一个电极连接到读取字线。 通过改变读取字线的电位来检查存储在电容器中的电荷量，并且如果电荷量已经减少超过预定量，则刷新存储器单元。

公开(公告)号：US08964489B2

公开(公告)日：2015-02-24

申请号：US12759725

申请日：2010-04-14

申请人： Toshihiko Saito

发明人： Toshihiko Saito

IPC分类号： G11C7/22 ,  G11C5/14 ,  G11C17/18 ,  H01L27/10 ,  H01L23/525

CPC分类号： G11C5/145 ,  G11C17/18 ,  H01L23/5252 ,  H01L27/101 ,  H01L2924/0002 ,  H01L2924/00

摘要： When writing into an antifuse memory element finishes, a value of resistance of the memory element rapidly decreases; accordingly, an output voltage of a boosting circuit which produces a writing voltage rapidly decreases. By detecting a change in the output voltage of the boosting circuit to control a writing command, the writing operation can be stopped immediately after the memory element is shorted. Thus, unnecessary current consumption caused by continuing a writing operation on the shorted memory element can be suppressed.

摘要翻译： 当写入反熔丝存储元件时，存储元件的电阻值迅速降低; 因此，产生写入电压的升压电路的输出电压急剧下降。 通过检测升压电路的输出电压的变化来控制写入命令，可以在存储元件短路之后立即停止写入操作。 因此，可以抑制对短路存储元件继续写入操作引起的不必要的电流消耗。

公开(公告)号：US08854865B2

公开(公告)日：2014-10-07

申请号：US13298235

申请日：2011-11-16

申请人： Toshihiko Saito

发明人： Toshihiko Saito

IPC分类号： G11C11/24 ,  H01L49/02 ,  H01L27/12 ,  H01L21/84 ,  G11C11/404 ,  H01L27/108

CPC分类号： H01L27/1082 ,  G11C11/401 ,  G11C11/404 ,  G11C11/4096 ,  H01L21/84 ,  H01L27/108 ,  H01L27/1085 ,  H01L27/10852 ,  H01L27/10873 ,  H01L27/1203 ,  H01L28/40 ,  H01L28/60 ,  H01L29/7869

摘要： To increase a storage capacity of a memory module per unit area, and to provide a memory module with low power consumption, a transistor formed using an oxide semiconductor film, a silicon carbide film, a gallium nitride film, or the like, which is highly purified and has a wide band gap of 2.5 eV or higher is used for a DRAM, so that a retention period of potentials in a capacitor can be extended. Further, a memory cell has n capacitors with different capacitances and the n capacitors are each connected to a corresponding one of n data lines, so that a variety of the storage capacitances can be obtained and multilevel data can be stored. The capacitors may be stacked for reducing the area of the memory cell.

摘要翻译： 为了增加每单位面积的存储器模块的存储容量，并且提供具有低功耗的存储器模块，使用高度的氧化物半导体膜，碳化硅膜，氮化镓膜等形成的晶体管 纯化并且具有2.5eV或更高的宽带隙用于DRAM，使得可以延长电容器中的电位的保持期。 此外，存储单元具有n个具有不同电容的电容器，并且n个电容器各自连接到n个数据线中的相应的一个，从而可以获得各种存储电容并且可以存储多级数据。 电容器可以被堆叠以减小存储单元的面积。

公开(公告)号：US08809992B2

公开(公告)日：2014-08-19

申请号：US13356012

申请日：2012-01-23

申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Toshihiko Saito ,  Takehisa Hatano ,  Hideomi Suzawa ,  Shinya Sasagawa ,  Junichi Koezuka ,  Yuichi Sato ,  Shinji Ohno

发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Toshihiko Saito ,  Takehisa Hatano ,  Hideomi Suzawa ,  Shinya Sasagawa ,  Junichi Koezuka ,  Yuichi Sato ,  Shinji Ohno

IPC分类号： H01L29/786

CPC分类号： H01L29/66969 ,  H01L21/02488 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/7869

摘要： A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.

摘要翻译： 提供了包括氧化物半导体并且具有良好的电特性的半导体器件。 在半导体器件中，在衬底上形成氧化物半导体膜和绝缘膜。 氧化物半导体膜的侧面与绝缘膜接触。 氧化物半导体膜包括沟道形成区域和包含掺杂剂的区域，沟道形成区域夹在其间。 栅极绝缘膜与氧化物半导体膜形成并接触。 在栅绝缘膜上形成具有侧壁绝缘膜的栅电极。 源电极和漏电极形成为与氧化物半导体膜和绝缘膜接触。

公开(公告)号：US08687407B2

公开(公告)日：2014-04-01

申请号：US13599272

申请日：2012-08-30

申请人： Hajime Tokunaga ,  Toshihiko Saito

发明人： Hajime Tokunaga ,  Toshihiko Saito

IPC分类号： G11C11/00

CPC分类号： H01L27/112 ,  G11C17/16 ,  H01L21/84 ,  H01L27/105 ,  H01L27/11206 ,  H01L27/11286 ,  H01L27/12

摘要： A structure of a storage device which can operate memory elements utilizing silicide reaction using the same voltage value for writing and for reading, and a method for driving the same are proposed. The present invention relates to a storage device including a memory element and a circuit which changes a polarity of applying voltage to the memory element for writing (or reading) into a different polarity of that for reading (or writing). The memory element includes at least a first conductive layer, a film including silicon formed over the first conductive layer, and a second conductive layer formed over the silicon film. The first conductive layer and the second conductive layer of the memory element are formed using different materials.

摘要翻译： 提出了可以使用相同的写入和读取电压值来操作使用硅化物反应的存储元件的存储装置的结构及其驱动方法。 本发明涉及一种包括存储元件和电路的存储装置，该电路改变向用于写入（或写入）的不同极性的写入（或读取）存储元件的电压施加电压的极性。 存储元件至少包括第一导电层，在第一导电层上形成的包括硅的膜，以及形成在硅膜上的第二导电层。 存储元件的第一导电层和第二导电层使用不同的材料形成。