摘要:
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.
摘要:
A detecting apparatus for detecting a fine geometry on a surface of a sample, wherein an irradiation beam is irradiated against the sample placed in a different environment different from an atmosphere and a secondary radiation emanated from the sample is detected by a sensor, and wherein the sensor is disposed at an inside of the different environment, a processing device to process detection signals from the sensor is disposed at an outside of the different environment, and a transmission means transmits detection signals from the sensor to the processing device.
摘要:
An electron beam apparatus is provided for evaluating a sample at a high throughput and a high S/N ratio. As an electron beam emitted from an electron gun is irradiated to a sample placed on an X-Y-θ stage through an electrostatic lens, an objective lens and the like, secondary electrons or reflected electrons are emitted from the sample. The primary electron beam is incident at an incident angle set at approximately 35° or more by controlling a deflector. Electrons emitted from the sample is guided in the vertical direction, and focused on a detector. The detector is made up of an MCP, a fluorescent plate, a relay lens, and a TDI (or CCD). An electric signal from the TDI is supplied to a personal computer for image processing to generate a two-dimensional image of the sample.
摘要:
An ultra-fine microfabrication method using an energy beam is based on the use of shielding provided by nanometer or micrometer sized micro-particles to produce a variety of three-dimensional fine structures which have not been possible by the traditional photolithographic technique which is basically designed to produce two-dimensional structures. When the basis technique of radiation of an energy beam and shielding is combined with a shield positioning technique using a magnetic, electrical field or laser beam, with or without the additional chemical effects provided by reactive gas particle beams or solutions, fine structures of very high aspect ratios can be produced with precision. Applications of devices having the fine structures produced by the method include wavelength shifting in optical communications, quantum effect devices and intensive laser devices.
摘要:
An energy beam source is used in micro-fabrication tasks, such as fabrication of specific patterns, in-situ bonding, repair, connection and disconnection of electrical paths, applicable to semiconductor devices and other micro-sized circuits in integrated circuits. The beam source is made compact so that several sources can be located inside a vacuum vessel and in conjunction with micro-manipulators or micro-movement stages operated under light or an electron microscope. The beam source is provided with at least three electrodes, and by applying a selected voltage, i.e., high frequency voltage, direct current voltage and ground voltage, on each the three electrodes in association with film-forming substance(s), virtually any type of deposit can be formed at any location of a workpiece. Different types of particle beams, such as positive and negative ion beams, a highspeed neutral atomic beam, a radical particle beam, an electron beam can be produced from the beam source by judicious choice of operating-parameters and the film-forming material which may be a process gas or an applied coating. By using the beam source and the method of deposit forming presented, virtually any type of fabrication task can be carried out on any surface and any location of a workpiece in a three-dimensional space.
摘要:
A method for inspecting a glass substrate for imprint including a glass substrate with a pattern surface and a transmissive conductive film coating at least part of the pattern surface, includes an electron beam irradiation step of irradiating the pattern surface of the glass substrate for imprint disposed on a stage with an electron beam having a predetermined irradiation area; an electron detection step of simultaneously detecting electrons from the pattern surface by the electron beam irradiation by means of a detection surface with a plurality of pixels; and a defect detection step of obtaining an image of the pattern surface based on the electrons detected by the detection surface and detecting a defect of the pattern surface.
摘要:
Provided is a method and an apparatus for inspecting a sample surface with high accuracy. Provided is a method for inspecting a sample surface by using an electron beam method sample surface inspection apparatus, in which an electron beam generated by an electron gun of the electron beam method sample surface inspection apparatus is irradiated onto the sample surface, and secondary electrons emanating from the sample surface are formed into an image toward an electron detection plane of a detector for inspecting the sample surface, the method characterized in that a condition for forming the secondary electrons into an image on a detection plane of the detector is controlled such that a potential in the sample surface varies in dependence on an amount of the electron beam irradiated onto the sample surface.
摘要:
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.
摘要:
The present invention provides a surface inspection method and apparatus for inspecting a surface of a sample, in which a resistive film is coated on the surface, and a beam is irradiated to the surface having the resistive film coated thereon, to thereby conduct inspection of the surface of the sample. In the surface inspection method of the present invention, a resistive film having an arbitrarily determined thickness t1 is first coated on a surface of a sample. Thereafter, a part of the resistive film having the arbitrarily determined thickness t1 is dissolved in a solvent, to thereby reduce the thickness of the resistive film to a desired level. This enables precise control of a value of resistance of the resistive film and suppresses distortion of an image to be detected.
摘要:
The present invention provides a surface inspection method and apparatus for inspecting a surface of a sample, in which a resistive film is coated on the surface, and a beam is irradiated to the surface having the resistive film coated thereon, to thereby conduct inspection of the surface of the sample. In the surface inspection method of the present invention, a resistive film having an arbitrarily determined thickness t1 is first coated on a surface of a sample. Thereafter, a part of the resistive film having the arbitrarily determined thickness t1 is dissolved in a solvent, to thereby reduce the thickness of the resistive film to a desired level. This enables precise control of a value of resistance of the resistive film and suppresses distortion of an image to be detected.