公开(公告)号：US20060205131A1

公开(公告)日：2006-09-14

申请号：US11411929

申请日：2006-04-27

申请人： Masafumi Kubota ,  Shigenori Hayashi

发明人： Masafumi Kubota ,  Shigenori Hayashi

IPC分类号： H01L21/8234

CPC分类号： H01L21/28194 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02238 ,  H01L21/02266 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/268 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/324 ,  H01L28/40 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： An underlying insulting film of silicon oxide, a gate insulating film of hafnium oxide, a gate electrode of polysilicon, and side walls of silicon oxide are formed above an element formation region of a semiconductor substrate. In the upper portion of the element formation region of the semiconductor substrate, source and drain areas and extension areas are formed by implantations of respective types. Thereafter, the scan speed of the semiconductor substrate and the pulse interval and the peak power of laser beam are adjusted to irradiate only the vicinity of the surface of the semiconductor substrate with laser beam for 0.1 second so that the vicinity of the surface of the semiconductor substrate has a temperature of 1150 to 1250° C. Thus, heat treatments for the gate insulating film and the source and drain areas are performed.

摘要翻译： 在半导体衬底的元件形成区域之上形成氧化硅的基底绝缘膜，氧化铪栅极绝缘膜，多晶硅栅电极和氧化硅侧壁。 在半导体衬底的元件形成区域的上部，通过各种类型的注入来形成源极和漏极区域以及延伸区域。 此后，调整半导体衬底的扫描速度和脉冲间隔以及激光束的峰值功率，以仅使激光束的半导体衬底的表面附近仅照射0.1秒，使得半导体的表面附近 基板的温度为1150〜1250℃。因此，进行栅极绝缘膜和源极和漏极区域的热处理。

公开(公告)号：US06258434B1

公开(公告)日：2001-07-10

申请号：US09407863

申请日：1999-09-29

申请人： Shigenori Hayashi

发明人： Shigenori Hayashi

IPC分类号： G11B566

CPC分类号： G11B5/72 ,  G11B5/8408 ,  Y10S428/90 ,  Y10T428/24355 ,  Y10T428/265 ,  Y10T428/30

摘要： A magnetic recording medium having a diamond-like carbon (DLC) film added therein a Group IV element of the periodic table such as silicon, particularly in the vicinity of the boundary between the magnetic material and the formed DLC film. Since a DLC having low friction coefficient can be formed, the centerline average roughness can be reduced to 30 nm or even less. Accordingly, a magnetic recording medium improved in magnetic properties and in lubricity can be obtained.

摘要翻译： 具有类金刚石碳（DLC）薄膜的磁记录介质，其中添加了诸如硅的周期表的IV族元素，特别是在磁性材料和形成的DLC膜之间的边界附近。 由于可以形成具有低摩擦系数的DLC，因此中心线平均粗糙度可以降低到30nm甚至更小。 因此，可以获得磁性能和润滑性提高的磁记录介质。

公开(公告)号：US5928528A

公开(公告)日：1999-07-27

申请号：US921896

申请日：1997-09-02

申请人： Masafumi Kubota ,  Shigenori Hayashi ,  Michinari Yamanaka ,  Kenji Harafuji

发明人： Masafumi Kubota ,  Shigenori Hayashi ,  Michinari Yamanaka ,  Kenji Harafuji

IPC分类号： C23C14/34 ,  C23C16/50 ,  C23C16/511 ,  C23C16/515 ,  C23F4/00 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H05H1/16

CPC分类号： H01J37/32706 ,  H01L21/31116 ,  H01L21/32137

摘要： A reactive gas supplied to a chamber 1 is put into plasma by supplying radio frequency power to the chamber 1 intermittently or while repeating high and low levels alternately and a specimen A in the chamber 1 is treated by the plasma. A positive pulse-like bias voltage synchronized with a period in which the radio frequency power is not supplied or a period in which low-level power is supplied is applied to the specimen A for preventing charging.

摘要翻译： 通过间歇地向腔室1提供射频功率或者交替地重复高低电平，并且通过等离子体处理腔室1中的样本A，将供给到腔室1的反应气体投入等离子体。 与未提供射频功率的时段同步的正脉冲状偏置电压或供给低电平电力的期间被施加到用于防止充电的检体A。

公开(公告)号：US5674366A

公开(公告)日：1997-10-07

申请号：US483873

申请日：1995-06-07

申请人： Shigenori Hayashi ,  Kazuki Komaki ,  Takeshi Kamada ,  Masatoshi Kitagawa ,  Takashi Deguchi ,  Ryoichi Takayama ,  Takashi Hirao

发明人： Shigenori Hayashi ,  Kazuki Komaki ,  Takeshi Kamada ,  Masatoshi Kitagawa ,  Takashi Deguchi ,  Ryoichi Takayama ,  Takashi Hirao

IPC分类号： C23C14/00 ,  C23C14/08 ,  C23C14/58 ,  G02F1/00 ,  H01L21/314 ,  H01L21/316 ,  H01L37/02 ,  H01L41/316 ,  C23C14/34

CPC分类号： C23C14/5853 ,  C23C14/0078 ,  C23C14/088 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/314 ,  H01L21/31691 ,  H01L37/025 ,  H01L41/1875 ,  H01L41/316 ,  G02F1/0027

摘要： A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.3), and (iii) a processing method wherein light of short wave length is irradiated on the deposition surface in a gaseous atmosphere comprising at least reactive elements in the non-deposition process, the oxygen concentration in the deposited thin films is adjusted and dielectric thin films of good quality and an extremely low defect content are realized.

摘要翻译： 具有ABO3结构的钙钛矿型氧化物电介质薄膜能够通过具有沉积工艺的高通量形成具有良好的稳定性，均匀性，再现性等特性的方法，其中薄膜沉积在 基板和稳定化处理，其中不存在薄膜的沉积，在衬底温度保持接近形成钙钛矿型氧化物电介质薄膜的温度的同时交替重复。 此外，通过采用以下处理方法：（i）在包含与组成薄膜的元素反应的气体的气体气氛中，在等离子体发生的反应性气体的分解激发发生在沉积表面上或其附近的处理方法，（ii） 处理方法，其中在至少包含臭氧（O 3）的气体气氛中在沉积表面上发生氧化反应，和（iii）其中在至少包括至少包含臭氧（O 3）的气体气氛中在沉积表面上照射短波长的光的处理方法 在非沉积工艺中的非活性元素，沉积的薄膜中的氧浓度被调节，并且实现了良好质量和极低缺陷含量的介电薄膜。

公开(公告)号：US5507080A

公开(公告)日：1996-04-16

申请号：US353315

申请日：1994-12-05

申请人： Shigenori Hayashi ,  Takeshi Kamada ,  Hideo Torii ,  Takashi Hirao

发明人： Shigenori Hayashi ,  Takeshi Kamada ,  Hideo Torii ,  Takashi Hirao

IPC分类号： G01D5/241 ,  G01L9/00 ,  G01P15/125 ,  H01G5/16

CPC分类号： G01L9/0072 ,  G01D5/2417 ,  G01P15/125 ,  Y10T29/43

摘要： A small and highly sensitive capacitance type pressure sensor is obtained by filling an alkali halide material such as KBr into a through-hole, forming a conductive thin film on the surface, and dissolving and removing the alkali halide material. An insulating plate disposed with a through-hole in the thickness direction is filled with a molten alkali halide material such as KBr. After forming a conductive thin film on the surface of the alkali halide material filled into the through-hole and the vicinity thereof, the alkali halide material is dissolved by water and removed. In this way, a diaphragm is made of the through-hole and the conductive thin film. A curve of the diaphragm caused by a pressure difference between the both faces of the conductive thin film is detected as a capacitance change between the conductive thin film and the electrode layer.

摘要翻译： 通过将诸如KBr的碱金属卤化物材料填充到通孔中，在表面上形成导电薄膜，并溶解和除去碱金属卤化物材料，获得小而高灵敏度的电容式压力传感器。 在厚度方向上设置有通孔的绝缘板填充有诸如KBr的熔融卤化碱材料。 在填充到通孔及其附近的碱金属卤化物材料的表面上形成导电薄膜之后，碱金属卤化物材料被水溶解并除去。 以这种方式，隔膜由通孔和导电薄膜制成。 由导电薄膜的两面之间的压力差引起的隔膜的曲线被检测为导电薄膜和电极层之间的电容变化。

公开(公告)号：US5268247A

公开(公告)日：1993-12-07

申请号：US764490

申请日：1991-09-24

申请人： Shigenori Hayashi

发明人： Shigenori Hayashi

IPC分类号： G03G5/082 ,  G03G5/147 ,  G03G5/14

CPC分类号： G03G5/14704 ,  G03G5/08285

摘要： A printing drum (An electrophotographic member) for electrophotographic copying machines comprises a substrate, a photosensitive film formed on the substrate and a protective film formed on the photosensitive film and mainly comprising carbon at no lower than 50 atom % and including hydrogen at 10 to 40 atom % and nitrogen at 1 to 10 atom %. The protective film may further include fluorine at 0 to 1 atom %. The transparency of the protective film is controlled by adjusting the concentration of hydrogen. The resistivity of the protective film is controlled by adjusting the concentration of nitrogen. By this configuration, requirements for the protective film on the hardness, the transparency and the resistivity of the protective film are satisfied at the same time.

摘要翻译： 用于电子照相复印机的印刷鼓（电子照相构件）包括基底，形成在基底上的感光膜和形成在感光膜上的主要包含不低于50原子％的碳并且包含10至40的氢的保护膜 原子％和1〜10原子％的氮。 保护膜还可以含有0〜1原子％的氟。 通过调节氢的浓度来控制保护膜的透明度。 通过调节氮的浓度来控制保护膜的电阻率。 通过这种结构，同时满足保护膜对保护膜的硬度，透明度和电阻率的要求。

公开(公告)号：US5260134A

公开(公告)日：1993-11-09

申请号：US831848

申请日：1992-02-06

申请人： Shigenori Hayashi ,  Masahiko Sato

发明人： Shigenori Hayashi ,  Masahiko Sato

IPC分类号： C08J7/00 ,  B05D7/24 ,  C08J7/04 ,  C23C16/32 ,  B32B27/36 ,  B05D5/12

CPC分类号： B05D1/62 ,  C23C16/325 ,  Y10T428/31507 ,  Y10T428/3154 ,  Y10T428/31667 ,  Y10T428/31721 ,  Y10T428/31786 ,  Y10T428/31913 ,  Y10T428/3192 ,  Y10T428/31924

摘要： The present invention is related to an organic composite. This organic composite comprises a substrate having an organic material surface and a film formed on the substrate by such plasma CVD method. Said organic material have an unsaturated bond of carbon. This organic composite gives an improved performance in an adhesion between the film and the substrate.

摘要翻译： 本发明涉及有机复合材料。 该有机复合材料包括具有有机材料表面的基材和通过这种等离子体CVD方法在基材上形成的膜。 所述有机材料具有碳的不饱和键。 该有机复合物在膜和基材之间的粘附性方面具有改进的性能。

公开(公告)号：US07554156B2

公开(公告)日：2009-06-30

申请号：US11254727

申请日：2005-10-21

申请人： Yoshinao Harada ,  Shigenori Hayashi ,  Masaaki Niwa

发明人： Yoshinao Harada ,  Shigenori Hayashi ,  Masaaki Niwa

IPC分类号： H01L27/088

CPC分类号： H01L21/28229 ,  H01L21/28185 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

摘要： In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high dielectric constant gate insulating film on a substrate, forming a gate electrode on the high dielectric constant gate insulating film, forming an extension region by introducing N-type impurities into the substrate by using at least the gate electrode as a mask, and forming a pocket region by introducing P-type impurities under the extension region in the substrate by using at least the gate electrode as a mask. An amount of arsenic (As) that is introduced as the N-type impurities is in a range that is equal to or lower than a prescribed value that is determined based on a thickness of the high dielectric constant gate insulating film.

摘要翻译： 在制造具有N沟道场效应晶体管的半导体器件的方法中，N沟道场效应晶体管通过以下步骤形成，该方法包括以下步骤：在衬底上形成高介电常数栅极绝缘膜，形成栅电极 高介电常数栅极绝缘膜，通过至少使用栅电极作为掩模，将N型杂质引入基板，形成延伸区域，并通过在基板的延伸区域内引入P型杂质形成袋区域 至少使用栅电极作为掩模。 作为N型杂质而引入的砷（As）的量在等于或低于基于高介电常数栅极绝缘膜的厚度确定的规定值的范围内。

公开(公告)号：US20090130833A1

公开(公告)日：2009-05-21

申请号：US12357818

申请日：2009-01-22

申请人： Shigenori Hayashi ,  Riichiro Mitsuhashi

发明人： Shigenori Hayashi ,  Riichiro Mitsuhashi

IPC分类号： H01L21/4763

CPC分类号： H01L21/823842 ,  H01L21/28097 ,  H01L21/823835 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

摘要： A semiconductor device includes: an n-transistor including a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal, the first gate insulating film and the first gate electrode being formed in this order over a semiconductor region; and a p-transistor including a second gate insulating film made of the high-dielectric-constant material and a second gate electrode fully silicided with the metal, the second gate insulating film and the second gate electrode being formed in this order over the semiconductor region. If the metal has a work function larger than a Fermi level in potential energy of electrons of silicon, a metal concentration of the second gate electrode is higher than that of the first gate electrode whereas if the metal has a work function smaller than the Fermi level of silicon, a metal concentration of the second gate electrode is lower than that of the first gate electrode.

摘要翻译： 半导体器件包括：n型晶体管，其包括由高介电常数材料制成的第一栅极绝缘膜和完全硅化金属的第一栅电极，第一栅极绝缘膜和第一栅电极按此顺序形成 在半导体区域; 以及包括由高介电常数材料制成的第二栅极绝缘膜和完全硅化金属的第二栅电极的p晶体管，第二栅极绝缘膜和第二栅电极依次形成在半导体区域上 。 如果金属具有比硅的电子势能大于费米能级的功函数，则第二栅电极的金属浓度高于第一栅电极的金属浓度，而如果金属具有小于费米能级的功函数 的硅，第二栅电极的金属浓度低于第一栅电极的金属浓度。

公开(公告)号：US20060269798A1

公开(公告)日：2006-11-30

申请号：US11492995

申请日：2006-07-26

申请人： Shigenori Hayashi

发明人： Shigenori Hayashi

IPC分类号： G11B5/65

CPC分类号： G11B5/72 ,  G11B5/8408 ,  Y10T428/24942 ,  Y10T428/265 ,  Y10T428/30

摘要： A magnetic recording medium having a diamond-like carbon (DLC) film added therein a Group IV element of the periodic table such as silicon, particularly in the vicinity of the boundary between the magnetic material and the formed DLC film. Since a DLC having low friction coefficient can be formed, the centerline average roughness can be reduced to 30 nm or even less. Accordingly, a magnetic recording medium improved in magnetic properties and in lubricity can be obtained.