公开(公告)号：US10197918B2

公开(公告)日：2019-02-05

申请号：US15730875

申请日：2017-10-12

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Cong Liu ,  Doris H. Kang ,  Deyan Wang ,  Cheng-Bai Xu ,  Mingqi Li ,  Irvinder Kaur

IPC: G03F7/11 ,  G03F7/09 ,  G03F7/038 ,  B05C11/08 ,  G03F7/00 ,  G03F7/16 ,  H01L21/027 ,  G03F7/40 ,  G03F7/38

Abstract: Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: R1 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R2 represents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; L1 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: R3 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R4 represents linear, branched or cyclic C1 to C20 alkyl; R5 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L2 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.

公开(公告)号：US20180059542A1

公开(公告)日：2018-03-01

申请号：US15252522

申请日：2016-08-31

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Emad Aqad ,  William Williams, III ,  Cong Liu

IPC: G03F7/004 ,  C08F218/14 ,  G03F7/039 ,  G03F7/20 ,  G03F7/32 ,  C07C309/12 ,  C07C321/30

CPC classification number: G03F7/0045 ,  C07C69/753 ,  C07C303/32 ,  C07C309/00 ,  C07C309/12 ,  C07C381/12 ,  C07C2102/42 ,  C07C2103/74 ,  C07C2602/42 ,  C07C2603/74 ,  C07D303/40 ,  C07D317/34 ,  C07D317/72 ,  C07D327/08 ,  C07D333/76 ,  C07D335/16 ,  C07D339/08 ,  C07D409/12 ,  C07D493/18 ,  C08F232/08 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/30 ,  G03F7/38

Abstract: A photoacid-generating compound has the structure where R1, R2, R3, R4, Q, and X are defined herein. The photoacid-generating compound can be used as a component of a photoresist composition, or as a monomer incorporated into a polymer useful in a photoresist composition. The photoacid-generating compound provides a desired balance of solubility and line width roughness.

公开(公告)号：US09448486B2

公开(公告)日：2016-09-20

申请号：US14586945

申请日：2014-12-30

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Cong Liu ,  Seung-Hyun Lee ,  Kevin Rowell ,  Gerhard Pohlers ,  Cheng-Bai Xu ,  Wenyan Yin ,  Thomas A. Estelle ,  Shintaro Yamada

IPC: G03F7/004 ,  G03F7/40 ,  G03F7/039

CPC classification number: G03F7/405 ,  G03F7/0392

Abstract: Provided are compositions and methods for trimming a photoresist pattern. The photoresist pattern trimming composition comprises: a matrix polymer comprising a unit formed from a monomer of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; R2 is chosen from C1-C15 alkylene; and R3 is chosen from C1-C3 fluoroalkyl; an aromatic acid that is free of fluorine; and a solvent. The compositions and methods find particular applicability in the manufacture of semiconductor devices.

公开(公告)号：US20160124304A1

公开(公告)日：2016-05-05

申请号：US14992692

申请日：2016-01-11

Applicant: Rohm and Haas Electronic Materials, LLC

Inventor： Mingqi Li ,  Emad Aqad ,  Cong Liu ,  Joseph Mattia ,  Cheng-Bai Xu ,  George G. Barclay

IPC: G03F7/004 ,  C07C321/30 ,  C07J31/00 ,  C07D333/46 ,  C07C309/12

CPC classification number: G03F7/0045 ,  C07C303/32 ,  C07C309/06 ,  C07C309/12 ,  C07C321/30 ,  C07C381/12 ,  C07C2603/74 ,  C07D333/46 ,  C07D335/02 ,  C07D337/04 ,  C07D493/20 ,  C07J31/006 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/30

Abstract: New methods are provided for synthesis of photoacid generator compounds (“PAGs”), new photoacid generator compounds and photoresist compositions that comprise such PAG compounds. In a particular aspect, sulfonium-containing (S+) photoacid generators and methods of synthesis of sulfonium photoacid generators are provided.

Abstract translation: 提供了新的方法用于合成光酸产生剂化合物（“PAG”），新的光酸产生剂化合物和包含这种PAG化合物的光致抗蚀剂组合物。 在特定方面，提供含锍（S +）光酸产生剂和合成锍光酸发生剂的方法。

公开(公告)号：US09046767B2

公开(公告)日：2015-06-02

申请号：US14063148

申请日：2013-10-25

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Emad Aqad ,  Irvinder Kaur ,  Cong Liu ,  Mingqi Li ,  Cheng-Bai Xu

IPC: G03F7/004 ,  G03F7/028 ,  C07C381/12 ,  C07D319/04 ,  C07D319/08 ,  G03F7/027

CPC classification number: C07D319/08 ,  C07C309/12 ,  C07C381/12 ,  C07C2603/74 ,  C07D319/04 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325

Abstract: A photoacid generator compound has the formula (1) wherein a, b, c, d, e, x, L1, L2, L3, L4, R1, R2, X, and Z− are defined herein. The photoacid generator compound exhibits good solubility in solvents typically used to formulate photoresist compositions and negative tone developers. Described herein are a photoresist composition including the photoacid generator compound, a coated substrate including the photoresist composition, and a device-forming method utilizing the photoresist composition.

Abstract translation: 光酸产生剂化合物具有式（1），其中a，b，c，d，e，x，L1，L2，L3，L4，R1，R2，X和Z-在本文中定义。 光致酸产生剂化合物在通常用于配制光致抗蚀剂组合物和负色调显影剂的溶剂中表现出良好的溶解性。 本文描述的是包含光致酸产生剂化合物的光致抗蚀剂组合物，包括光致抗蚀剂组合物的涂覆基质和利用光致抗蚀剂组合物的器件形成方法。

公开(公告)号：US12085854B2

公开(公告)日：2024-09-10

申请号：US17490738

申请日：2021-09-30

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Cong Liu ,  Jong Keun Park ,  James F. Cameron ,  Sheng Liu ,  Tsutomu Asazuma ,  Mingqi Li

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/039

CPC classification number: G03F7/0045 ,  G03F7/038 ,  G03F7/039

Abstract: A photoresist composition comprising a polymer, a photoacid generator, an additive comprising a tertiary carbon atom as a ring-forming atom of a lactone ring, and a solvent.

公开(公告)号：US11796916B2

公开(公告)日：2023-10-24

申请号：US17227511

申请日：2021-04-12

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Xisen Hou ,  Cong Liu ,  Irvinder Kaur

IPC: G03F7/11 ,  G03F7/09 ,  G03F7/16 ,  C08F220/68 ,  H01L21/027 ,  C09D133/16 ,  G03F7/00 ,  G03F7/40 ,  C09D133/02 ,  G03F7/039 ,  G03F7/004 ,  C08F212/14

CPC classification number: G03F7/11 ,  C08F212/24 ,  C08F220/68 ,  C09D133/02 ,  C09D133/16 ,  G03F7/0035 ,  G03F7/0048 ,  G03F7/039 ,  G03F7/094 ,  G03F7/168 ,  G03F7/40 ,  G03F7/405 ,  H01L21/0274

Abstract: A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R1—C(O)O—R2, wherein R1 is a C3-C6 alkyl group and R2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.

公开(公告)号：US20210232047A1

公开(公告)日：2021-07-29

申请号：US17227511

申请日：2021-04-12

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Xisen Hou ,  Cong Liu ,  Irvinder Kaur

IPC: G03F7/00 ,  G03F7/11 ,  G03F7/16 ,  C08F220/68 ,  H01L21/027 ,  C09D133/16 ,  G03F7/40 ,  C09D133/02 ,  G03F7/039 ,  G03F7/004 ,  C08F212/14

Abstract: A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R1—C(O)O—R2, wherein R1 is a C3-C6 alkyl group and R2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.

公开(公告)号：US10466588B2

公开(公告)日：2019-11-05

申请号：US15332340

申请日：2016-10-24

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Cong Liu ,  Cheng-Bai Xu

IPC: G03F7/004 ,  G03F7/30 ,  C07C309/17 ,  C07C311/48 ,  C07C381/12 ,  G03F7/038 ,  G03F7/039 ,  C07C313/04 ,  C07C321/28 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

Abstract: New bis(sulfonyl)imide and tri(sulfonyl)methide photoacid generator compounds (“PAGs”) are provided as well as photoresist compositions that comprise such PAG compounds.

公开(公告)号：US20190243246A1

公开(公告)日：2019-08-08

申请号：US16269615

申请日：2019-02-07

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Irvinder Kaur ,  Doris Kang ,  Cong Liu ,  Gerhard Pohlers ,  Mingqi Li

IPC: G03F7/11 ,  G03F7/20 ,  G03F7/32 ,  G03F7/004 ,  C09D133/10 ,  G03F7/40 ,  G03F7/00 ,  H01L21/027 ,  G03F7/38

CPC classification number: G03F7/11 ,  C09D133/10 ,  G03F7/0002 ,  G03F7/0046 ,  G03F7/16 ,  G03F7/2041 ,  G03F7/327 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0274 ,  C08L33/16

Abstract: Provided are topcoat compositions that include: a matrix polymer; a surface active polymer; an ionic thermal acid generator comprising an anion and a cation, wherein the anion, the cation, or the anion and the cation are fluorinated; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.