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公开(公告)号：US09925749B2
公开(公告)日：2018-03-27
申请号：US14468818
申请日：2014-08-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Masakatsu Ohno , Yoshiharu Hirakata , Shingo Eguchi , Yasuhiro Jinbo , Hisao Ikeda , Kohei Yokoyama , Hiroki Adachi , Satoru Idojiri
CPC classification number: B32B37/0046 , B32B17/10431 , B32B27/08 , B32B27/20 , B32B27/36 , B32B37/0015 , B32B37/003 , B32B37/1284 , B32B38/0008 , B32B38/18 , B32B38/1841 , B32B38/1858 , B32B2264/102 , B32B2264/105 , B32B2309/68 , B32B2457/14 , B32B2457/20 , H01L2224/01 , Y10T156/15 , Y10T156/1798
Abstract: A yield in the step of bonding two members together is improved. A bonding apparatus includes a stage capable of supporting a first member having a sheet-like shape, a fixing mechanism capable of fixing one end portion of a second member having a sheet-like shape so that the second member overlaps with the first member, and a pressurizing mechanism capable of moving from a side of the one end portion of the second member to a side of the other end portion and spreading a bonding layer under pressure between the first member and the second member. The first member and the second member are bonded to each other.
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公开(公告)号：US09849660B2
公开(公告)日：2017-12-26
申请号：US15165099
申请日：2016-05-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Saki Eguchi , Koichi Takeshima , Hiroki Adachi
CPC classification number: B32B43/006 , B32B37/003 , B32B37/22 , B32B38/10 , B32B2457/14 , B32B2457/20 , H01L21/67132 , H01L21/6836 , H01L2221/68318 , H01L2221/6835 , H01L2221/68363 , H01L2221/68381 , H01L2221/68386 , H01L2221/6839 , H01L2221/68395
Abstract: A yield in a separation process is improved. A separation apparatus which enables easy separation in a large-area substrate is provided. The separation apparatus has a function of dividing a process member into a first member and a second member and includes a support body supply unit, a support body hold unit, a transfer mechanism, a direction changing mechanism, and a structure body. The structure body bonds a support body to a surface of the first member. When at least part of the process member is located between the direction changing mechanism and the structure body or the pressure applying mechanism, the shortest distance between the direction changing mechanism and a first plane including the surface of the first member is longer than the shortest distance between the first plane and the structure body or the pressure applying mechanism.
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公开(公告)号：US09770894B2
公开(公告)日：2017-09-26
申请号：US15248579
申请日：2016-08-26
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Masakatsu Ohno , Hiroki Adachi , Satoru Idojiri , Koichi Takeshima
IPC: B32B43/00 , B32B38/10 , B32B37/12 , H01L51/56 , H01L27/32 , H01L51/52 , B32B37/00 , B32B37/26 , H01L51/00
CPC classification number: B32B43/006 , B32B37/0053 , B32B37/025 , B32B37/12 , B32B37/1207 , B32B38/10 , B32B2037/1253 , B32B2037/268 , B32B2457/20 , B32B2457/208 , H01L27/322 , H01L27/323 , H01L27/3262 , H01L51/0013 , H01L51/003 , H01L51/524 , H01L51/5253 , H01L51/5284 , H01L51/56 , H01L2227/323 , H01L2227/326 , H01L2251/5315 , H01L2251/5338 , Y10T156/1111 , Y10T156/1174 , Y10T156/1928 , Y10T156/195
Abstract: The yield of a peeling process is improved. A peeling apparatus includes a structure body with a convex surface and a stage with a supporting surface which faces the convex surface. The structure body can hold a first member of a process member between the convex surface and the supporting surface. The stage can hold a second member of the process member. The radius of curvature of the convex surface is less than the radius of curvature of the supporting surface. The linear velocity of the convex surface is greater than or equal to the speed of a rotation center of the structure body passing the stage. The first member is wound along the convex surface to be separated from the second member.
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公开(公告)号：US09455418B2
公开(公告)日：2016-09-27
申请号：US14468808
申请日：2014-08-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Masakatsu Ohno , Kohei Yokoyama , Satoru Idojiri , Hisao Ikeda , Yasuhiro Jinbo , Hiroki Adachi , Yoshiharu Hirakata , Shingo Eguchi
CPC classification number: B65G49/068 , B32B17/06 , B32B37/025 , B32B38/10 , B32B43/006 , B32B2457/00 , B32B2457/14 , B32B2457/20 , B65G49/069 , B65G2249/04 , B65H3/0816 , B65H3/48 , B65H16/00 , B65H35/0006 , H01L21/673 , H01L21/67333 , H01L21/67715 , H01L21/68 , H01L27/3244 , H01L51/5237 , H01L51/56 , H01L2221/68318 , H01L2227/323 , Y10T29/53091 , Y10T29/5317 , Y10T156/1121 , Y10T156/1137 , Y10T156/1158 , Y10T156/1184 , Y10T156/1917 , Y10T156/1922 , Y10T156/1939 , Y10T156/1967
Abstract: An apparatus for supplying a support having a clean surface is provided. Alternatively, an apparatus for manufacturing a stack including a support and a remaining portion of a processed member whose one surface layer is separated is provided. A positioning portion, a slit formation portion, and a peeling portion are included. The positioning portion is provided with a first transfer mechanism of a stacked film including a support and a separator and a table for fixing the stacked film. The slit formation portion is provided with a cutter that can form a slit which does not pass through the separator. The peeling portion is provided with a second transfer mechanism and a peeling mechanism extending the separator and then peeling the separator. In addition, a pretreatment portion activating a support surface is included.
Abstract translation: 提供了一种用于提供具有干净表面的支撑件的装置。 或者，提供一种用于制造包括支撑体的堆叠的装置和其一个表面层被分离的被处理构件的剩余部分。 包括定位部分，狭缝形成部分和剥离部分。 定位部设置有包括支撑体和隔板的层叠膜的第一传送机构和用于固定层叠膜的台。 狭缝形成部设置有能够形成不通过隔板的狭缝的切割器。 剥离部设置有第二传送机构和剥离机构，其使隔板延伸，然后剥离隔膜。 此外，包括激活支撑表面的预处理部分。
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公开(公告)号：US08610152B2
公开(公告)日：2013-12-17
申请号：US13688809
申请日：2012-11-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hidekazu Takahashi , Daiki Yamada , Yohei Monma , Hiroki Adachi , Shunpei Yamazaki
IPC: H01L33/00
CPC classification number: H01L31/0232 , H01L27/1214 , H01L27/1266 , H01L27/1277 , H01L27/1462 , H01L31/02162 , H01L2224/11
Abstract: A semiconductor device in which the damage such as cracks, chinks, or dents caused by external stress is reduced is provided. In addition, the yield of a semiconductor device having a small thickness is increased. The semiconductor device includes a light-transmitting substrate having a stepped side surface, the width of which in a portion above the step and closer to one surface is smaller than that in a portion below the step, a semiconductor element layer provided over the other surface of the light-transmitting substrate, and a stack of a first light-transmitting resin layer and a second light-transmitting resin layer, which covers the one surface and part of the side surface of the light-transmitting substrate. One of the first light-transmitting resin layer and the second light-transmitting resin layer has a chromatic color.
Abstract translation: 提供了其中由外部应力引起的诸如裂纹，凹陷或凹痕的损伤减小的半导体器件。 此外，具有小厚度的半导体器件的产量增加。 半导体器件包括具有台阶侧表面的透光衬底，其宽度在台阶之上的部分中并且更接近一个表面的透光衬底小于在该阶梯下方的部分的透光衬底;设置在另一表面上的半导体元件层 以及覆盖透光性基板的一侧面和一部分的第一透光性树脂层和第二透光性树脂层的层叠体。 第一透光树脂层和第二透光树脂层中的一个具有彩色。
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Patent Agency Ranking
公开(公告)号：US11296132B2
公开(公告)日：2022-04-05
申请号：US16884241
申请日：2020-05-27
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Yasuharu Hosaka , Satoru Idojiri , Kenichi Okazaki , Hiroki Adachi , Daisuke Kubota
IPC: H01L27/12 , H01L21/683 , H01L29/66 , H01L29/786 , H01L27/32
Abstract: A peeling method at low cost with high mass productivity is provided. A resin layer having a thickness greater than or equal to 0.1 μm and less than or equal to 3 μm is formed over a formation substrate using a photosensitive and thermosetting material, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, the resin layer is irradiated with light using a linear laser device, and the transistor and the formation substrate are separated from each other. A first region and a second region which is thinner than the first region or an opening can be formed in the resin layer. In the case of forming a conductive layer functioning as an external connection terminal or the like to overlap with the second region or the opening of the resin layer, the conductive layer is exposed.
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57.发明授权公开(公告)号：US11054687B2
公开(公告)日：2021-07-06
申请号：US16319649
申请日：2017-05-11
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Masakatsu Ohno , Seiji Yasumoto , Naoto Goto , Hiroki Adachi
IPC: G02F1/136 , G02F1/1333 , G02F1/1362 , G02F1/1368
Abstract: A method for manufacturing a display device with low power consumption is provided.
A method for manufacturing a display device includes a step of forming a first layer over a substrate by using a material containing a resin or a resin precursor, a step of forming a first region and a second region thinner than the first region in the first layer, a step of forming a first resin layer including a first region and a second region thinner than the first region by performing first heat treatment on the first layer in a gas containing oxygen, a step of forming, over the first resin layer, a layer to be separated including a display element, and a step of separating the layer to be separated and the substrate from each other. A step of forming a conductive layer over the first resin layer in a position overlapping with the second region is included in the step of forming the layer to be separated. A step of exposing the conductive layer by removing the first resin layer is included after the step of separating the layer to be separated and the substrate from each other.-
公开(公告)号：US11004925B2
公开(公告)日：2021-05-11
申请号：US16872806
申请日：2020-05-12
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Masakatsu Ohno , Hiroki Adachi , Satoru Idojiri , Koichi Takeshima
IPC: H01L27/32 , H01L51/00 , H01L51/56 , H01L51/52 , H01L27/12 , H01L29/24 , H01L29/66 , H01L29/786 , B23K26/0622 , B23K26/04 , B23K26/06 , B23K26/08 , H01L51/50 , H01L41/314
Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
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公开(公告)号：US10861917B2
公开(公告)日：2020-12-08
申请号：US15388208
申请日：2016-12-22
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Hiroki Adachi , Satoru Idojiri , Kensuke Yoshizumi
Abstract: A flexible device is manufactured at low temperatures. A second substrate is bonded to a first substrate by a first adhesive layer. A first insulating layer, a transistor, and a second insulating layer are formed over the second substrate. Then, the first substrate and the second substrate are separated from each other while being heated at a first temperature. The heat resistant temperatures of the first substrate, the second substrate, and the first adhesive layer are a second temperature, a third temperature, and a fourth temperature, respectively. Each of the first insulating layer, the second insulating layer, and the transistor is formed at a temperature higher than or equal to room temperature and lower than the fourth temperature. The third temperature is higher than the fourth temperature and lower than the second temperature. The first temperature is higher than the fourth temperature and lower than the third temperature.
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公开(公告)号：US10442172B2
公开(公告)日：2019-10-15
申请号：US15610890
申请日：2017-06-01
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kayo Kumakura , Tomoya Aoyama , Akihiro Chida , Kohei Yokoyama , Masakatsu Ohno , Satoru Idojiri , Hisao Ikeda , Hiroki Adachi , Yoshiharu Hirakata , Shingo Eguchi , Yasuhiro Jinbo
IPC: B32B43/00 , G02B6/00 , H01L21/67 , B26D1/04 , H01L51/56 , B32B38/10 , B26D1/00 , H01L27/12 , H01L27/32
Abstract: A processing apparatus of a stack is provided. The stack includes two substrates attached to each other with a gap provided between their end portions. The processing apparatus includes a fixing mechanism that fixes part of the stack, a plurality of adsorption jigs that fix an outer peripheral edge of one of the substrates of the stack, and a wedge-shaped jig that is inserted into a corner of the stack. The plurality of adsorption jigs include a mechanism that allows the adsorption jigs to move separately in a vertical direction and a horizontal direction. The processing apparatus further includes a sensor sensing a position of the gap between the end portion in the stack. A tip of the wedge-shaped jig moves along a chamfer formed on an end surface of the stack. The wedge-shaped jig is inserted into the gap between the end portions in the stack.
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