公开(公告)号：US20180149966A1

公开(公告)日：2018-05-31

申请号：US15807106

申请日：2017-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Hyunjae SONG ,  Seongjun PARK ,  Keunwook SHIN ,  Changseok LEE

IPC: G03F1/64 ,  G03F1/22 ,  G03F7/20

CPC classification number: G03F1/64 ,  G03F1/22 ,  G03F1/62 ,  G03F7/7015 ,  G03F7/70883

Abstract: A pellicle for a photomask, a reticle including the same, and an exposure apparatus for lithography are provided. The pellicle may include a pellicle membrane, and the pellicle membrane may include nanocrystalline graphene. The nanocrystalline graphene may have defects. The nanocrystalline graphene may include a plurality of nanoscale crystal grains, and the nanoscale crystal grains may include a two-dimensional (2D) carbon structure having an aromatic ring structure. The defects of the nanocrystalline graphene may include at least one of an sp3 carbon atom, an oxygen atom, a nitrogen atom, or a carbon vacancy.

公开(公告)号：US20170092592A1

公开(公告)日：2017-03-30

申请号：US15083827

申请日：2016-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Hyeonjin SHIN ,  Changhyun KIM ,  Changseok LEE ,  Seongjun PARK ,  Hyunjae SONG

IPC: H01L23/532 ,  H01L23/528

CPC classification number: H01L23/53276 ,  H01L23/485 ,  H01L23/5283

Abstract: A hybrid interconnect structure includes a graphene layer between a non-metallic material layer and a metal layer, and a first interfacial bonding layer between the non-metallic material layer and the graphene layer, or the metal layer and the graphene layer. The graphene layer connects the non-metallic material layer and the metal layer, and the first bonding layer includes a metallic material.

公开(公告)号：US20160351491A1

公开(公告)日：2016-12-01

申请号：US15052290

申请日：2016-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok LEE ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Seongjun PARK ,  Hyunjae SONG ,  Hyangsook LEE ,  Yeonchoo CHO

IPC: H01L23/528 ,  H01L27/06 ,  H01L23/532

CPC classification number: H01L27/0629 ,  H01L23/53271 ,  H01L27/101 ,  H01L27/228

Abstract: A wiring structure may include at least two conductive material layers and a two-dimensional layered material layer in an interface between the at least two conductive material layers. The two-dimensional layered material layer may include a grain expander layer which causes grain size of a conductive material layer which is on the two-dimensional layered material layer to be increased. Increased grain size may result in resistance of the second conductive material layer to be reduced. As a result, the total resistance of the wiring structure may be reduced. The two-dimensional layered material layer may contribute to reducing a total thickness of the wiring structure. Thus, a low-resistance and high-performance wiring structure without an increase in a thickness thereof may be implemented.

Abstract translation: 布线结构可以包括在至少两个导电材料层之间的界面中的至少两个导电材料层和二维层状材料层。 二维层状材料层可以包括使二维层状材料层上的导电性材料层的粒径增大的晶粒扩展层。 增加的晶粒尺寸可能导致第二导电材料层的电阻降低。 结果，可以减小布线结构的总电阻。 二维层状材料层可有助于减小布线结构的总厚度。 因此，可以实现不增加其厚度的低电阻和高性能布线结构。

公开(公告)号：US20160315326A1

公开(公告)日：2016-10-27

申请号：US15048142

申请日：2016-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Dongwook LEE ,  Seongjun PARK

IPC: H01M4/66 ,  H01M4/04 ,  H01M4/58 ,  H01M4/48 ,  H01M10/0525 ,  H01M4/38

CPC classification number: H01M4/663 ,  H01M4/0428 ,  H01M4/0471 ,  H01M4/133 ,  H01M4/386 ,  H01M4/387 ,  H01M4/48 ,  H01M4/5815 ,  H01M4/587 ,  H01M10/0525 ,  H01M2220/30

Abstract: Example embodiments relate to electrode materials, secondary batteries including the electrode materials, and methods of manufacturing the electrode materials and the secondary batteries. An electrode material may include a foam structure having a plurality of pores and a plurality of nanostructures disposed in the plurality of pores. The foam structure may include a graphene foam structure. The plurality of nanostructures may include at least one of a nanoparticle and a nanorod. The plurality of nanostructures may include a material capable of accommodating/discharging ions. The electrode material may be used as an anode material of a secondary battery.

Abstract translation: 示例性实施例涉及电极材料，包括电极材料的二次电池以及制造电极材料和二次电池的方法。 电极材料可以包括具有多个孔的泡沫结构和设置在多个孔中的多个纳米结构。 泡沫结构可以包括石墨烯泡沫结构。 多个纳米结构可以包括纳米颗粒和纳米棒中的至少一个。 多个纳米结构可以包括能够容纳/排出离子的材料。 电极材料可以用作二次电池的负极材料。

公开(公告)号：US20160300958A1

公开(公告)日：2016-10-13

申请号：US15054871

申请日：2016-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongjun PARK ,  Jaeho LEE ,  Changho RA ,  Wonjong YOO ,  Faisal AHMED ,  Zheng YANG ,  Xiaochi LIU

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/467 ,  H01L29/24 ,  H01L21/02

CPC classification number: H01L29/78681 ,  H01L29/04 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/78687 ,  H01L29/78696

Abstract: An electronic device includes a 2D material layer having a bandgap. The 2D material layer includes two multilayer 2D material regions and a channel region therebetween. A first electrode electrically contacts one of the multilayer 2D material regions, and a second electrode electrically contacts the other of the multilayer 2D material regions.

Abstract translation: 电子设备包括具有带隙的2D材料层。 2D材料层包括两个多层2D材料区域和它们之间的沟道区域。 第一电极电接触所述多层2D材料区域中的一个，并且第二电极与所述多层2D材料区域中的另一个电接触。

公开(公告)号：US20160300908A1

公开(公告)日：2016-10-13

申请号：US14932395

申请日：2015-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： JINSEONG HEO ,  Kiyoung LEE ,  Jaeho LEE ,  Seongjun PARK

IPC: H01L29/06 ,  H01L21/225 ,  H01L29/423 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/0665 ,  H01L21/2253 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/4236 ,  H01L29/42384 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78648 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78687 ,  H01L29/78696

Abstract: Provided are electronic devices and methods of manufacturing same. An electronic device includes an energy barrier forming layer on a substrate, an upper channel material layer on the substrate, and a gate electrode that covers the upper channel material layer and the energy barrier forming layer. The gate electrode includes a side gate electrode portion that faces a side surface of the energy barrier forming layer. The side gate electrode may be configured to cause an electric field to be applied directly on the energy barrier forming layer via the side surface of the energy barrier forming layer, thereby enabling adjustment of the energy barrier between the energy barrier forming layer and the upper channel material layer. The electronic device may further include a lower channel material layer that is provided on the substrate and does not contact the upper channel material layer.

Abstract translation: 提供电子装置及其制造方法。 电子设备包括在基板上的能量阻挡层形成层，在基板上的上部沟道材料层，以及覆盖上部沟道材料层和能量阻挡层形成层的栅电极。 栅电极包括面向能阻层形成层的侧表面的侧栅电极部分。 侧栅电极可以被配置为经由能量阻挡形成层的侧表面直接施加到能量阻挡形成层上的电场，从而能够调节能量阻挡形成层和上通道之间的能量势垒 材料层。 电子设备还可以包括设置在基板上并且不接触上通道材料层的下通道材料层。

公开(公告)号：US20160233447A1

公开(公告)日：2016-08-11

申请号：US14845518

申请日：2015-09-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taeho KIM ,  Sangwon KIM ,  Seongjun PARK ,  Sangmin LEE

IPC: H01L51/00 ,  A61B5/00 ,  H01L27/32 ,  A61B5/024 ,  H01L51/50 ,  H01L51/52

CPC classification number: H01L51/0097 ,  A61B5/02427 ,  A61B5/6826 ,  H01L27/3225 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0037 ,  H01L51/0094 ,  H01L51/502 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/52 ,  H01L51/5206 ,  H01L51/5209 ,  H01L51/5225 ,  H01L51/5234 ,  H01L51/5253 ,  H01L2251/301 ,  H01L2251/5338 ,  H01L2251/558 ,  Y02E10/549 ,  Y02P70/521

Abstract: Provided are a stretchable and/or foldable optoelectronic device, a method of manufacturing the same, and an apparatus including the stretchable and/or foldable optoelectronic device. A stretchable and/or foldable optoelectronic device may include an optoelectronic device portion on a substrate. The substrate may include an elastomeric polymer and may be stretchable. The optoelectronic device portion may be configured to have a wavy structure to be stretchable. The optoelectronic device portion may include a graphene layer and a quantum dot (QD)-containing layer. The stretchable and/or foldable optoelectronic device may further include a capping layer that includes an elastomeric polymer and is on the optoelectronic device portion. The stretchable and/or foldable optoelectronic device may further include a plastic material layer that contacts at least one surface of the optoelectronic device portion.

Abstract translation: 提供了一种可拉伸和/或可折叠的光电子器件，其制造方法以及包括可拉伸和/或可折叠的光电器件的设备。 可拉伸和/或可折叠的光电器件可以包括衬底上的光电器件部分。 基底可以包括弹性体聚合物并且可以是可拉伸的。 光电子器件部分可以被配置为具有可拉伸的波浪结构。 光电器件部分可以包括石墨烯层和含量子点（QD）层。 可拉伸和/或可折叠的光电子器件还可包括包覆弹性聚合物并且在光电器件部分上的封盖层。 可伸缩和/或可折叠的光电器件还可包括与光电器件部分的至少一个表面接触的塑料材料层。

公开(公告)号：US20160155683A1

公开(公告)日：2016-06-02

申请号：US14955112

申请日：2015-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwon KIM ,  Seunggeol NAM ,  Hyeonjin SHIN ,  Haeryong KIM ,  Seongjun PARK

IPC: H01L23/367 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L24/14 ,  H01L23/3128 ,  H01L23/3731 ,  H01L23/4334 ,  H01L23/49816 ,  H01L2224/141 ,  H01L2224/16227 ,  H01L2924/15311 ,  H01L2924/18161

Abstract: A semiconductor package includes a semiconductor chip on a substrate, a thermal conductive film on a lower surface of the semiconductor chip, the thermal conductive film facing the substrate, and a molding member on the substrate and surrounding a sidewall of the semiconductor chip.

Abstract translation: 半导体封装包括：衬底上的半导体芯片，半导体芯片的下表面上的导热膜，与衬底相对的导热膜，以及在衬底上的模制构件，并且围绕半导体芯片的侧壁。

公开(公告)号：US20160011511A1

公开(公告)日：2016-01-14

申请号：US14791912

申请日：2015-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Sangwon KIM ,  Seongjun PARK

IPC: G03F7/11 ,  G03F7/40

CPC classification number: G03F7/11 ,  C08G83/001 ,  C08K3/30 ,  C08K3/38 ,  C08K2003/3009 ,  C08K2003/385 ,  G03F7/094 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/47 ,  H01L21/47573

Abstract: A hardmask composition includes a first material including one of an aromatic ring-containing monomer and a polymer containing a repeating unit including an aromatic ring-containing monomer, a second material including at least one of a hexagonal boron nitride and a precursor thereof, a chalcogenide-based material and a precursor thereof, and a two-dimensional carbon nanostructure and a precursor thereof, the two-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen, and a solvent.

Abstract translation: 硬掩模组合物包括包含含芳环的单体和含有含芳环单体的重复单元的聚合物的第一材料，包含六方氮化硼及其前体中的至少一种的第二材料，硫族化物 的二氧化硅材料及其前体，二维碳纳米结构及其前体，含有约0.01原子％至约40原子％氧的二维碳纳米结构和溶剂。

公开(公告)号：US20150235959A1

公开(公告)日：2015-08-20

申请号：US14625282

申请日：2015-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok LEE ,  Hyeonjin SHIN ,  Seongjun PARK ,  Donghyun IM ,  Hyun PARK ,  Keunwook SHIN ,  Jongmyeong LEE ,  Hanjin LIM

IPC: H01L23/532 ,  H01L27/108

CPC classification number: H01L23/53276 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Example embodiments relate to a wiring structure, a method of forming the same, and an electronic device employing the same. The wiring structure includes a first conductive material layer and a nanocrystalline graphene layer on the first conductive material layer in direct contact with the metal layer.

Abstract translation: 示例性实施例涉及布线结构，其形成方法和使用该布线结构的电子设备。 布线结构包括与金属层直接接触的第一导电材料层上的第一导电材料层和纳米晶体石墨烯层。