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91 条记录 (耗时 0.024 秒)

    Process for producing an aromatic urethane from nitro compounds, hydroxyl compounds and carbon monoxide using metal-Lewis acid-ammonia catalyst systems
    51.
    发明授权
    Process for producing an aromatic urethane from nitro compounds, hydroxyl compounds and carbon monoxide using metal-Lewis acid-ammonia catalyst systems 失效
    使用金属 - 路易斯酸 - 氨催化剂体系从硝基化合物，羟基化合物和一氧化碳制备芳族氨基甲酸酯的方法

    公开(公告)号：US4134880A

    公开(公告)日：1979-01-16

    申请号：US870890

    申请日：1978-01-19

    申请人： Katsuharu Miyata ,  Yutaka Hirai ,  Hiroshi Yoshida

    发明人： Katsuharu Miyata ,  Yutaka Hirai ,  Hiroshi Yoshida

    IPC分类号： C07C271/06 ,  C08L79/00

    CPC分类号： C07C271/06

    摘要： An aromatic urethane of high quality and excellent heat stability can be produced in high yield by reacting an aromatic nitro compound, a hydroxyl group-containing organic compound and carbon monoxide in the presence of a catalytic system composed of (1) palladium, ruthenium, rhodium or a compound thereof, (2) a Lewis acid, and (3) ammonia. The use of such catalytic system can suppress undesirable side reactions to a satisfactory extent and ensures the reaction to proceed without causing any corrosion of a stainless steel reactor. If necessary, water may be added to the reaction system to increase the reaction velocity, by which the unit cost of the catalyst can be reduced.

    摘要翻译： 在由（1）钯，钌，铑组成的催化体系存在下，通过使芳族硝基化合物，含羟基的有机化合物和一氧化碳反应，可以高收率地制备高质量和优异的热稳定性的芳族聚氨酯 或其化合物，（2）路易斯酸和（3）氨。 使用这样的催化体系可以将不期望的副反应抑制到令人满意的程度，并确保反应进行而不会引起不锈钢反应器的任何腐蚀。 如果需要，可以向反应体系中加入水以提高反应速度，由此可以降低催化剂的单位成本。

    Method for the preparation of a halogenated aromatic amine
    52.
    发明授权
    Method for the preparation of a halogenated aromatic amine 失效
    卤代芳香胺的制备方法

    公开(公告)号：US4070401A

    公开(公告)日：1978-01-24

    申请号：US331834

    申请日：1973-02-12

    申请人： Yutaka Hirai ,  Katsuharu Miyata

    发明人： Yutaka Hirai ,  Katsuharu Miyata

    IPC分类号： C07C20060101 ,  C07C85/11

    摘要： A method for the preparation of a halogenated aromatic amine, wherein a halogenated aromatic nitro compound is hydrogenated in liquid phase in the presence of a platinum-base catalyst to obtain a corresponding halogenated aromatic amine, the hydrogenation being carried out in the presence of an alkylmonoamine, an alicyclic amine or a polyalkylenepolyamine. The presence of the amine well suppresses a dehalogenation reaction which would otherwise be involved, so that not only a high purity halogenated aromatic amine is obtained, but also corrosion of a reactor is prevented.

    摘要翻译： 一种制备卤代芳族胺的方法，其中卤化芳族硝基化合物在铂碱催化剂存在下在液相中氢化得到相应的卤代芳族胺，氢化在烷基一胺存在下进行 ，脂环族胺或聚亚烷基多胺。 胺阱的存在抑制了否则将涉及的脱卤反应，因此不仅可以获得高纯度的卤代芳族胺，而且可以防止反应器的腐蚀。

    Process for preparing 1-aminoanthraquinone having high purity
    53.
    发明授权
    Process for preparing 1-aminoanthraquinone having high purity 失效
    制备纯度高的1-氨基蒽醌的方法

    公开(公告)号：US4054586A

    公开(公告)日：1977-10-18

    申请号：US641284

    申请日：1975-12-16

    申请人： Yutaka Hirai ,  Katsuharu Miyata ,  Tagui Osawa

    发明人： Yutaka Hirai ,  Katsuharu Miyata ,  Tagui Osawa

    IPC分类号： C07C225/34 ,  C09B1/16

    CPC分类号： C07C225/34

    摘要： A process for preparing 1-aminoanthraquinone having high purity, which comprises either1. hydrogenating 1-nitroanthraquinone in an aqueous medium in the presence of a base using a hydrogenating catalyst, and then oxidizing the hydrogenation product, or2. hydrogenating crude 1-nitroanthraquinone containing dinitroanthraquinones as impurities or crude 1-aminoanthraquinone containing diaminoanthraquinones as impurities in an aqueous medium in the presence of a base using a hydrogenating catalyst, stopping the hydrogenation at a time when the 1-nitroanthraquinone or 1-aminoanthraquinone has been substantially reduced to 1-aminoanthrahydroquinone but the dinitroanthraquinones or diaminoanthraquinones remain substantially unreduced to diaminoanthrahydroquinones, removing water-insoluble materials from the reaction mixture, and then oxidizing the remaining water-soluble residue.

    摘要翻译： 一种制备高纯度的1-氨基蒽醌的方法，其包括1.在使用氢化催化剂的碱存在下在水性介质中氢化1-硝基四氢呋喃，然后氧化氢化产物，或2.加氢原料1-硝基四氢呋喃 含有四氢喹啉酮作为防腐剂或将含有二氨基四氢呋喃的1-氨基四氢喹啉酮作为使用氢化催化剂的基质存在下的水性介质中的污染物，当1-硝基四氢呋喃或1-氨基四氢呋喃大量降低至1- 氨基四氢喹啉酮，但是四氢呋喃或二氨基四氢呋喃基本上不依赖于二氨基四氢呋喃，从反应混合物中除去水不溶物，然后氧化剩余的水溶性残留物。

    Semiconductor sensor of electrostatic capacitance type
    57.
    发明授权
    Semiconductor sensor of electrostatic capacitance type 失效
    半导体传感器的静电电容型

    公开(公告)号：US5285097A

    公开(公告)日：1994-02-08

    申请号：US838891

    申请日：1992-02-21

    申请人： Yutaka Hirai

    发明人： Yutaka Hirai

    IPC分类号： H01L21/285 ,  H01L21/28 ,  H01L27/20 ,  H01L29/84

    CPC分类号： H01L27/20

    摘要： A semiconductor sensor has a semiconductor substrate including both of a conductive or semiconductor surface and an insulative surface and a pair of conductive members provided on said conductive or semiconductor surface of the substrate. There is constructed a sensor section in which at least one of the pair of conductive members can be deformed and an electrostatic capacitance between the pair of conductive members is variable. The semiconductor substrate has a functional element which is electrically connected to the sensor section.

    摘要翻译： 半导体传感器具有包括导电或半导体表面和绝缘表面两者的半导体衬底和设置在衬底的所述导电或半导体表面上的一对导电构件。 构成传感器部分，其中该对导电部件中的至少一个可以变形，并且一对导电部件之间的静电电容是可变的。 半导体衬底具有电连接到传感器部分的功能元件。

    Device for forming deposited film
    58.
    发明授权
    Device for forming deposited film 失效
    用于形成沉积膜的装置

    公开(公告)号：US5261961A

    公开(公告)日：1993-11-16

    申请号：US908891

    申请日：1992-07-08

    申请人： Katsuji Takasu ,  Hisanori Tsuda ,  Masafumi Sano ,  Yutaka Hirai

    发明人： Katsuji Takasu ,  Hisanori Tsuda ,  Masafumi Sano ,  Yutaka Hirai

    IPC分类号： C23C16/48 ,  C23C16/52 ,  C23C16/54 ,  C23C16/46 ,  C23C16/50

    CPC分类号： C23C16/54 ,  C23C16/48 ,  C23C16/52

    摘要： A device for forming a deposited film is provided. It comprises (a) a reaction chamber; (b) a heating means for heating a substrate placed in the reaction chamber; (c) a starting gas introducing means for introducing starting gases into the reaction chamber, the gas introducing means having a means for introducing two or more kinds of gases alternately and intermittently into the reaction chamber; (d) a decomposing means for decomposing the starting gases in the reaction chamber so as to form a deposited film on the substrate heated by said heating means in the reaction chamber, the decomposing means having a light source which irradiates at least one kind of light into the reaction chamber to decompose the starting gases.

    摘要翻译： 提供一种用于形成沉积膜的装置。 它包括（a）反应室; （b）加热装置，用于加热放置在反应室中的基板; （c）原料气体引入装置，用于将起始气体引入反应室，气体导入装置具有交替间歇地将两种或多种气体引入反应室的装置; （d）分解装置，用于分解反应室中的起始气体，以便在反应室中由所述加热装置加热的基板上形成沉积膜，该分解装置具有照射至少一种光的光源 进入反应室以分解起始气体。

    Process for forming deposited film
    59.
    发明授权
    Process for forming deposited film 失效
    沉积膜形成工艺

    公开(公告)号：US5135607A

    公开(公告)日：1992-08-04

    申请号：US666448

    申请日：1991-03-11

    申请人： Yutaka Hirai

    发明人： Yutaka Hirai

    IPC分类号： C23C16/24 ,  C23C16/452 ,  H01L21/20 ,  H01L21/205

    CPC分类号： H01L21/02433 ,  C23C16/24 ,  C23C16/452 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

    摘要： A process for forming a crystalline deposited film on a substrate surface by preparing the substrate surface on which spaced crystal nuclei are present for forming the crystalline deposited film, forming the crystalline deposited film by introducing an activated species (A) formed decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance for film formation which is chemically mutually reactive with the activated species (A) whereby a mixture is formed between the two activated species to cause a chemical reaction therebetween and thereby affect the formation of the crystalline deposited film. An etching action is thereafter produced on the crystalline deposited film by exposing the film to a gaseous substance (B) capable of effecting an etching action to effect crystal growth in specific face direction.

    摘要翻译： 一种在衬底表面上形成结晶沉积膜的方法，其中通过制备其上存在间隔开的晶核的衬底表面以形成结晶沉积膜，通过引入形成化合物分解的活性物质（A）形成结晶沉积膜 SX），其含有与活化物质（A）化学相互反应的成膜用化学物质形成的硅和卤素的活化物质（B），由此在两种活化物质之间形成混合物以引起化学反应 从而影响结晶沉积膜的形成。 然后通过将膜暴露于能够进行蚀刻作用以在特定的面方向上实现晶体生长的气态物质（B），在结晶沉积膜上产生蚀刻作用。