公开(公告)号：US09048356B2

公开(公告)日：2015-06-02

申请号：US13163091

申请日：2011-06-17

申请人： Yoshinobu Asami

发明人： Yoshinobu Asami

IPC分类号： H01L31/046 ,  H01L31/028 ,  H01L27/30 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/076

CPC分类号： H01L31/028 ,  H01L27/302 ,  H01L31/03682 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/076 ,  Y02E10/544 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548

摘要： A photoelectric conversion device includes a first cell including a photoelectric conversion layer, a second cell over the first cell including a photoelectric conversion layer formed of a material having a wider band gap than that of the first cell, first and second electrodes under a surface of the first cell which is opposite to the second cell, and a third electrode over a surface of the second cell which is opposite to the first cell. The first and second cells each include a p-n or p-i-n junction, the first and second cells are in contact with each other and a p-n junction is formed in a contact portion therebetween, the first cell is electrically connected to the first and second electrodes to form a back contact structure, and the second cell is electrically connected to the third electrode.

摘要翻译： 光电转换装置包括：第一单元，包括光电转换层;第一单元，第二单元，包括由具有比第一单元的带隙更宽的材料形成的光电转换层;第一单元， 与第二单元相对的第一单元，以及与第一单元相对的第二单元的表面上的第三电极。 第一单元和第二单元各自包括pn或pin结，第一单元和第二单元彼此接触并且在其间的接触部分中形成pn结，第一单元电连接到第一和第二电极以形成 背接触结构，并且第二单元电连接到第三电极。

公开(公告)号：US08629490B2

公开(公告)日：2014-01-14

申请号：US11717759

申请日：2007-03-14

申请人： Yoshinobu Asami

发明人： Yoshinobu Asami

IPC分类号： H01L29/788

CPC分类号： H01L29/7881 ,  G11C16/0483 ,  H01L21/84 ,  H01L27/115 ,  H01L27/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object to provide a nonvolatile semiconductor storage device that prevents increase in a contact resistance value due to etching of a semiconductor layer when etching an interlayer insulating film and that has superiority in a writing characteristic and an electric charge-holding characteristic, and a manufacturing method thereof. A conductive layer is provided between a source or drain region and a source or drain wiring. The conductive layer is made of the same conductive layer that forms a control gate electrode. An insulating film is provided so as to cover the conductive layer, and the insulating film has a contact hole for exposing part of the conductive layer. The source or drain wiring is formed so that the contact hole is filled.

摘要翻译： 本发明的目的是提供一种非易失性半导体存储装置，其在蚀刻层间绝缘膜时防止由于半导体层的蚀刻引起的接触电阻值的增加，并且具有写入特性和电荷保持特性的优越性， 其制造方法。 在源极或漏极区域与源极或漏极布线之间提供导电层。 导电层由形成控制栅电极的相同的导电层制成。 提供绝缘膜以覆盖导电层，并且绝缘膜具有用于暴露部分导电层的接触孔。 源极或漏极布线形成为使得接触孔被填充。

公开(公告)号：US20110263087A1

公开(公告)日：2011-10-27

申请号：US13163927

申请日：2011-06-20

申请人： Yoshinobu Asami

发明人： Yoshinobu Asami

IPC分类号： H01L21/336

CPC分类号： H01L29/78621 ,  H01L21/28273 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1266 ,  H01L27/13 ,  H01L29/66825 ,  H01L2029/7863

摘要： A semiconductor device which is formed in a self-aligned manner without causing a problem of misalignment in forming a control gate electrode and in which a leak between the control gate electrode and a floating gate electrode is not generated, and a manufacturing method of the semiconductor device are provided. A semiconductor device includes a semiconductor film, a first gate insulating film over the semiconductor film, a floating gate electrode over the first gate insulating film, a second gate insulating film which covers the floating gate electrode, and a control gate electrode over the second gate insulating film. The control gate electrode is formed so as to cover the floating gate electrode with the second gate insulating film interposed therebetween, the control gate electrode is provided with a sidewall, and the sidewall is formed on a stepped portion of the control gate electrode, generated due to the floating gate electrode.

摘要翻译： 一种半导体器件，其以自对准的方式形成，而不会在形成控制栅电极时产生不对准的问题，并且其中不产生控制栅电极和浮栅之间的泄漏，以及半导体器件的制造方法 设备。 半导体器件包括半导体膜，半导体膜上的第一栅极绝缘膜，第一栅极绝缘膜上方的浮置栅电极，覆盖浮置栅电极的第二栅极绝缘膜，以及位于第二栅极上的控制栅电极 绝缘膜。 控制栅电极被形成为覆盖浮置栅电极，第二栅极绝缘膜插入其间，控制栅电极设置有侧壁，并且侧壁形成在控制栅电极的阶梯部分上，由此产生 到浮栅电极。

公开(公告)号：US07956352B2

公开(公告)日：2011-06-07

申请号：US11885970

申请日：2006-03-22

申请人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Yoshinobu Asami

发明人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Yoshinobu Asami

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L27/1255 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/105 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/11286 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/13 ,  H01L27/285 ,  H01L51/0042 ,  H01L51/0051 ,  H01L51/0059 ,  H01L51/0081 ,  H01L51/0533

摘要： On object of the invention is to provide a non-volatile memory device, in which data can be added to the memory device after a manufacturing process and forgery and the like by rewriting can be prevented, and a semiconductor device including the memory device. Another object of the invention is to provide a highly-reliable, inexpensive, and nonvolatile memory device and a semiconductor device including the memory device. A memory element includes a first conductive layer, a second conductive layer, a first insulating layer with a thickness of 0.1 nm or more and 4 nm or less being in contact with the first conductive layer, and an organic compound layer interposed between the first conductive layer, the first insulating layer, and the second conductive layer.

摘要翻译： 本发明的目的是提供一种非易失性存储器件，其中可以在制造过程之后将数据添加到存储器件，并且可以防止通过重写来防止伪造等，以及包括存储器件的半导体器件。 本发明的另一个目的是提供一种高度可靠，便宜且非易失性的存储器件和包括存储器件的半导体器件。 存储元件包括第一导电层，第二导电层，与第一导电层接触的厚度为0.1nm以上且4nm以下的第一绝缘层，以及介于第一导电层之间的有机化合物层 层，第一绝缘层和第二导电层。

公开(公告)号：US07745827B2

公开(公告)日：2010-06-29

申请号：US11525950

申请日：2006-09-25

申请人： Yoshinobu Asami

发明人： Yoshinobu Asami

IPC分类号： H01L29/04 ,  H01L29/68 ,  G11C11/22

CPC分类号： H01L27/1255 ,  H01L27/1266 ,  H01L27/1288

摘要： Conventionally, the layer of the insulator between a cathode and an anode is formed by a droplet discharge method, vapor deposition, or the like separately from an interlayer insulating film formed over a thin film transistor, which creates problems of increase in cost and the number of manufacturing steps. A memory device of the present invention includes a first conductive film; an insulating film formed over the first conductive film; and a second conductive film formed over the insulating film, and an opening and a contact hole which are formed in the insulating film. Further, the insulating film exists between the first conductive film and the second conductive film formed in the opening, and the first conductive film and the second conductive film are electrically connected in the contact hole.

摘要翻译： 通常，阴极和阳极之间的绝缘体层通过与形成在薄膜晶体管上形成的层间绝缘膜分开的液滴喷射法，气相沉积等形成，这产生成本增加和数量的问题 的制造步骤。 本发明的记忆装置包括：第一导电膜; 形成在所述第一导电膜上的绝缘膜; 以及形成在绝缘膜上的第二导电膜，以及形成在绝缘膜中的开口和接触孔。 此外，在第一导电膜和形成在开口中的第二导电膜之间存在绝缘膜，并且第一导电膜和第二导电膜在接触孔中电连接。

公开(公告)号：US20070228452A1

公开(公告)日：2007-10-04

申请号：US11717759

申请日：2007-03-14

申请人： Yoshinobu Asami

发明人： Yoshinobu Asami

IPC分类号： H01L29/788

CPC分类号： H01L29/7881 ,  G11C16/0483 ,  H01L21/84 ,  H01L27/115 ,  H01L27/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object to provide a nonvolatile semiconductor storage device that prevents increase in a contact resistance value due to etching of a semiconductor layer when etching an interlayer insulating film and that has superiority in a writing characteristic and an electric charge-holding characteristic, and a manufacturing method thereof. A conductive layer is provided between a source or drain region and a source or drain wiring. The conductive layer is made of the same conductive layer that forms a control gate electrode. An insulating film is provided so as to cover the conductive layer, and the insulating film has a contact hole for exposing part of the conductive layer. The source or drain wiring is formed so that the contact hole is filled.

摘要翻译： 本发明的目的是提供一种非易失性半导体存储装置，其在蚀刻层间绝缘膜时防止由于半导体层的蚀刻引起的接触电阻值的增加，并且具有写入特性和电荷保持特性的优越性， 其制造方法。 在源极或漏极区域与源极或漏极布线之间提供导电层。 导电层由形成控制栅电极的相同的导电层制成。 提供绝缘膜以覆盖导电层，并且绝缘膜具有用于暴露部分导电层的接触孔。 源极或漏极布线形成为使得接触孔被填充。

公开(公告)号：US20070069266A1

公开(公告)日：2007-03-29

申请号：US11525950

申请日：2006-09-25

申请人： Yoshinobu Asami

发明人： Yoshinobu Asami

IPC分类号： H01L29/94

CPC分类号： H01L27/1255 ,  H01L27/1266 ,  H01L27/1288

摘要： Conventionally, the layer of the insulator between a cathode and an anode is formed by a droplet discharge method, vapor deposition, or the like separately from an interlayer insulating film formed over a thin film transistor, which creates problems of increase in cost and the number of manufacturing steps. A memory device of the present invention includes a first conductive film; an insulating film formed over the first conductive film; and a second conductive film formed over the insulating film, and an opening and a contact hole which are formed in the insulating film. Further, the insulating film exists between the first conductive film and the second conductive film formed in the opening, and the first conductive film and the second conductive film are electrically connected in the contact hole.

摘要翻译： 通常，阴极和阳极之间的绝缘体层通过与形成在薄膜晶体管上形成的层间绝缘膜分开的液滴喷射法，气相沉积等形成，这产生成本增加和数量的问题 的制造步骤。 本发明的记忆装置包括：第一导电膜; 形成在所述第一导电膜上的绝缘膜; 以及形成在绝缘膜上的第二导电膜，以及形成在绝缘膜中的开口和接触孔。 此外，绝缘膜存在于形成在开口中的第一导电膜和第二导电膜之间，并且第一导电膜和第二导电膜在接触孔中电连接。

公开(公告)号：US20060175648A1

公开(公告)日：2006-08-10

申请号：US11337554

申请日：2006-01-24

申请人： Yoshinobu Asami

发明人： Yoshinobu Asami

IPC分类号： H01L29/94 ,  H01L21/8244

CPC分类号： H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/13 ,  H01L28/91 ,  H01L29/41733 ,  H01L29/51 ,  H01L29/78618

摘要： As for a memory element implemented in a semiconductor device typified by an RFID, it is an object of the present invention to reduce manufacturing steps and to provide a memory element and a memory circuit having the element with reduced cost. It is a feature of the present invention that a memory element sandwiched between electrodes has an organic compound, and an electrode connected to a semiconductor element controlling the memory element functions as an electrode of the memory element. In addition, an extremely thin semiconductor film formed on an insulated surface is used for the memory element; therefore cost can be reduced.

摘要翻译： 对于以由RFID代表的半导体器件中实现的存储元件，本发明的目的是减少制造步骤，并提供具有降低成本的具有该元件的存储元件和存储电路。 本发明的特征在于，夹在电极之间的存储元件具有有机化合物，并且连接到控制存储元件的半导体元件的电极用作存储元件的电极。 此外，在绝缘表面上形成的非常薄的半导体膜用于存储元件; 因此可以降低成本。

公开(公告)号：US08889490B2

公开(公告)日：2014-11-18

申请号：US12829686

申请日：2010-07-02

申请人： Yoshinobu Asami

发明人： Yoshinobu Asami

IPC分类号： H01L21/82 ,  H01L27/12 ,  H01L29/786 ,  H01L29/51 ,  H01L29/417 ,  H01L27/13 ,  H01L49/02

CPC分类号： H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/13 ,  H01L28/91 ,  H01L29/41733 ,  H01L29/51 ,  H01L29/78618

摘要： As for a memory element implemented in a semiconductor device typified by an RFID, it is an object of the present invention to reduce manufacturing steps and to provide a memory element and a memory circuit having the element with reduced cost. It is a feature of the present invention that a memory element sandwiched between electrodes has an organic compound, and an electrode connected to a semiconductor element controlling the memory element functions as an electrode of the memory element. In addition, an extremely thin semiconductor film formed on an insulated surface is used for the memory element; therefore cost can be reduced.

摘要翻译： 对于以由RFID代表的半导体器件中实现的存储元件，本发明的目的是减少制造步骤，并提供具有降低成本的具有该元件的存储元件和存储电路。 本发明的特征在于，夹在电极之间的存储元件具有有机化合物，并且连接到控制存储元件的半导体元件的电极用作存储元件的电极。 此外，在绝缘表面上形成的非常薄的半导体膜用于存储元件; 因此可以降低成本。

公开(公告)号：US08865511B2

公开(公告)日：2014-10-21

申请号：US13295304

申请日：2011-11-14

申请人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Ryoji Nomura ,  Yoshinobu Asami

发明人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Ryoji Nomura ,  Yoshinobu Asami

IPC分类号： H01L35/24 ,  H01L51/00 ,  H01L27/28 ,  H01L51/05 ,  G11C13/00 ,  B82Y10/00

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/285 ,  H01L51/0591

摘要： It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semiconductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.

摘要翻译： 本发明的一个目的是提供一种以高成本低成本制造高性能且高可靠性的存储器件和设置有存储器件的半导体器件的技术。 半导体器件包括在第一导电层上包括绝缘体的有机化合物层和包含绝缘体的有机化合物层上的第二导电层。 此外，半导体器件通过在第一导电层上形成第一导电层，排出绝缘体和有机化合物的组合物而形成包含绝缘体的有机化合物层，并在有机化合物层上形成第二导电层来制造 包括绝缘体。