Laser tracking interferometer
    51.
    发明授权
    Laser tracking interferometer 有权
    激光跟踪干涉仪

    公开(公告)号:US07388674B2

    公开(公告)日:2008-06-17

    申请号:US11458533

    申请日:2006-07-19

    IPC分类号: G01B9/06

    摘要: A laser tracking interferometer directs a laser beam to a retroreflector serving as an object to be measured to sense a displacement of the retroreflector using interference with a laser beam back reflected from the retroreflector. The laser tracking interferometer includes: a reference sphere; a carriage that rotates about a center of the reference sphere; a laser interferometer; a displacement gage for providing a displacement signal corresponding to a relative displacement between the reference sphere and the displacement gage; a data processing apparatus for computing a displacement of the retroreflector; a position sensitive detector for providing a position signal corresponding to deviation of a laser beam; and a controller for controlling rotation of the carriage based on the position signal so that the amount of deviation becomes zero.

    摘要翻译: 激光跟踪干涉仪将激光束引导到用作被测量对象的后向反射器,以使用与从后向反射器反射的激光束的干涉来感测回射器的位移。 激光跟踪干涉仪包括:参考球; 围绕参考球的中心旋转的托架; 激光干涉仪; 用于提供对应于参考球和位移计之间的相对位移的位移信号的位移计; 用于计算后向反射器的位移的数据处理装置; 位置敏感检测器,用于提供对应于激光束偏离的位置信号; 以及控制器,用于基于位置信号控制滑架的旋转,使得偏差量变为零。

    Mask pattern magnification correction method, magnification correction apparatus, and mask structure
    52.
    发明授权
    Mask pattern magnification correction method, magnification correction apparatus, and mask structure 失效
    掩模图案放大校正方法,倍率校正装置和掩模结构

    公开(公告)号:US06804323B2

    公开(公告)日:2004-10-12

    申请号:US10176614

    申请日:2002-06-24

    IPC分类号: G21K500

    摘要: A method of correcting a magnification of a mask pattern formed on a mask substrate. The method includes applying forces to four pressurizing points of an outer periphery of an approximately ring-shaped frame, which supports the mask substrate and has a rectangular window, on substantially extended lines of two diagonal lines of the rectangular window, and adjusting at least an angle, to the extended lines, of a vector of the forces applied to each of the pressurizing points.

    摘要翻译: 一种校正形成在掩模基板上的掩模图案的放大率的方法。 该方法包括在矩形窗口的两个对角线的基本上延伸的线上对大约环形框架的外周边的四个加压点施加力,该四个加压点支撑掩模基板并具有矩形窗口,并且至少调整 与施加到每个加压点的力的向量的延伸线的角度。

    Processing apparatus for processing sample in predetermined atmosphere
    53.
    发明授权
    Processing apparatus for processing sample in predetermined atmosphere 失效
    用于在预定气氛中处理样品的处理装置

    公开(公告)号:US06750946B2

    公开(公告)日:2004-06-15

    申请号:US09897930

    申请日:2001-07-05

    IPC分类号: G03B2752

    摘要: A substrate processing system has a first processing device which processes a substrate with a first process in a first gas atmosphere within a process chamber and a transfer device that transfers a substrate in a second gas atmosphere within a clean booth, the transfer device transferring a substrate which has been processed with a second process by a second processing device or a substrate which is to be processed by that second processing device. A load-lock chamber has a substrate transfer path between the first processing device and the transfer device and there is a gas supply device which supplies the first gas from the process chamber to the load-lock chamber when the substrate is transferred between the load-lock chamber and a first processing device, and supplies the second gas from the clean booth to the load-lock chamber when the substrate is transferred between the load-lock chamber and the transfer device.

    摘要翻译: 基板处理系统具有第一处理装置,其处理处理室内的第一气体气氛中的第一处理的基板和在清洁室内将第二气体气氛中的基板转印的转印装置,所述转印装置将基板 其通过第二处理装置或将被该第二处理装置处理的基板的第二处理进行处理。 负载锁定室具有在第一处理装置和转印装置之间的基板传送路径,并且存在一个气体供应装置,当基板在载荷传递装置之间传送时,将第一气体从处理室供应到装载锁定室, 锁定室和第一处理装置,并且当衬底在负载锁定室和转移装置之间传送时,将来自清洁室的第二气体供应到负载锁定室。

    Semiconductor device manufacturing system and method of manufacturing semiconductor devices
    54.
    发明授权
    Semiconductor device manufacturing system and method of manufacturing semiconductor devices 有权
    半导体器件制造系统和半导体器件的制造方法

    公开(公告)号:US06349240B2

    公开(公告)日:2002-02-19

    申请号:US09814871

    申请日:2001-03-23

    IPC分类号: G06F1900

    摘要: A semiconductor device manufacturing system is provided in which chip position information is read without removing resin from a package so that the cause of a failure can be quickly identified and removed and the yield of chips can be rapidly improved. A replacement address reading device reads redundancy addresses from a semiconductor device which is determined as faulty in a test performed after the semiconductor device has been sealed into a package. A chip position analyzing device estimates, from the combination of these redundancy addresses, a lot number, a wafer number and a chip number of the faulty semiconductor device. A failure distribution mapping device maps the distribution of faulty chips in each wafer in the lot based on these numbers thus obtained. A failure cause determining device identifies which manufacturing device or processing step has caused the failures in the wafer process based on the above distribution.

    摘要翻译: 提供了一种半导体器件制造系统,其中读取芯片位置信息而不从包装中去除树脂,从而可以快速识别和去除故障的原因,并且可以快速提高芯片的产量。 替换地址读取装置从在半导体器件被封装到封装中之后执行的测试中被确定为有故障的半导体器件中读取冗余地址。 芯片位置分析装置从这些冗余地址的组合估计有缺陷的半导体器件的批号,晶片号和芯片数。 故障分布映射设备根据这样获得的数据,对批次中每个晶片中的故障芯片的分布进行映射。 故障原因确定装置基于上述分布来识别哪个制造装置或处理步骤已经导致晶片过程中的故障。

    X-ray projection exposure apparatus and a device manufacturing method

    公开(公告)号:US06084938A

    公开(公告)日:2000-07-04

    申请号:US813349

    申请日:1997-03-07

    摘要: An X-ray projection exposure apparatus includes a mask chuck, a wafer chuck, an X-ray illuminating system, and an X-ray projection system. The masks chuck holds a reflection X-ray mask having a mask pattern thereon. The wafer chuck holds a wafer onto which the mask pattern is transferred. The X-ray illuminating system illuminates the reflection X-ray mask, held by the mask chuck, with X-rays. The X-ray projection optical system projects the mask pattern of the reflection X-ray mask onto the wafer held by the wafer chuck with a predetermined magnification. The mask chuck includes a mechanism for generating static electricity for attracting and holding the reflection X-ray mask by an electrostatic force. The invention also includes a device manufacturing method using such an X-ray projection exposure apparatus to transfer a mask pattern onto the wafer using the X-ray projection exposure apparatus.

    Scanning exposure method and mask therefor
    57.
    发明授权
    Scanning exposure method and mask therefor 失效
    扫描曝光方法和掩模

    公开(公告)号:US5994003A

    公开(公告)日:1999-11-30

    申请号:US935901

    申请日:1997-09-23

    IPC分类号: H01L21/027 G03F7/20 G03F9/00

    摘要: A scanning exposure method includes steps of relatively scanning a mask and a wafer relative to exposure light of a slit beam, to transfer a pattern of the mask onto the wafer and applying a relative speed between the mask and the wafer in a scan direction, during the scan exposure in one shot area, wherein the relative speed is changed in accordance with thermal distortion of the mask pattern caused during the scan exposure.

    摘要翻译: 扫描曝光方法包括以下步骤:相对于狭缝光束的曝光来相对地扫描掩模和晶片,以将掩模的图案转移到晶片上,并在扫描方向上在掩模和晶片之间施加相对速度, 在一个拍摄区域中的扫描曝光,其中相对速度根据在扫描曝光期间引起的掩模图案的热失真而改变。