公开(公告)号：US20160372367A1

公开(公告)日：2016-12-22

申请号：US15184215

申请日：2016-06-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Nobutaka Mizutani

IPC: H01L21/768 ,  C23C18/50 ,  H01L23/528 ,  C23C18/38 ,  H01L23/522 ,  H01L23/532

CPC classification number: C23C18/50 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1893 ,  C23C18/32 ,  C23C18/38 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76898 ,  H01L2221/1089

Abstract: Reliability of a plating process and reliability of a component manufactured through the plating process can be improved by suppressing peeling between plating layers formed by electroless plating. In a plating method, a plated component manufactured by the plating method, and a plating system 1 configured to manufacture the plated component by the plating method, a second electroless plating layer 39, which is made of a copper alloy and formed by the electroless plating, is formed on a surface of a first electroless plating layer 38 formed by the electroless plating. The first electroless plating layer 38 is a barrier layer configured to suppress diffusion of copper and is made of cobalt or a cobalt alloy. The second electroless plating layer 39 is a seed layer for forming an electrolytic plating layer of copper on a surface thereof and is made of an alloy of copper and nickel.

Abstract translation: 通过抑制通过无电镀形成的镀层之间的剥离，可以提高电镀工艺的可靠性和通过电镀工艺制造的部件的可靠性。 在电镀方法中，通过电镀方法制造的镀覆部件和通过电镀法制造镀覆部件的电镀系统1，由铜合金制成并通过无电镀形成的第二无电镀层39 形成在通过无电镀形成的第一化学镀层38的表面上。 第一化学镀层38是阻止铜的扩散而形成的阻挡层，由钴或钴合金构成。 第二无电解镀层39是用于在其表面形成铜的电解镀层的种子层，由铜和镍的合金构成。

公开(公告)号：US20160336179A1

公开(公告)日：2016-11-17

申请号：US15150517

申请日：2016-05-10

Applicant: Tokyo Electron Limited

Inventor： Nobutaka Mizutani ,  Mitsuaki Iwashita ,  Takashi Tanaka

IPC: H01L21/288 ,  C23C18/18 ,  C25D7/12 ,  C23C18/34 ,  H01L21/768 ,  C25D3/38

CPC classification number: H01L21/288 ,  C23C18/1637 ,  C23C18/1651 ,  C23C18/1844 ,  C23C18/32 ,  C23C18/38 ,  C23C18/50 ,  C23C18/54 ,  H01L21/76843 ,  H01L21/76874 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53238

Abstract: An electroless plating process is performed on an Al layer, which is made of aluminum or an aluminum alloy, with an electroless plating liquid which is alkaline and contains a complexing agent. A plating method includes preparing a substrate 10 having a surface (for example, bottom surface of TSV 12) at which an Al layer 22 made of aluminum or an aluminum alloy is exposed; forming a zincate film 30 on a surface of the Al layer by performing a zincate treatment on the substrate; and forming a first electroless plating layer (for example, Co barrier layer 14a) on the surface of the Al layer with an electroless plating liquid (for example, Co-based plating liquid) which is alkaline and contains a complexing agent.

Abstract translation: 在由铝或铝合金制成的Al层上进行化学镀处理，使用碱性且含有络合剂的无电镀液。 电镀方法包括制备具有暴露由铝或铝合金制成的Al层22的表面（例如，TSV 12的底表面）的基板10; 通过在基板上进行锌酸盐处理，在Al层的表面上形成锌酸盐膜30; 以及碱性并含有络合剂的化学镀液（例如Co系电镀液）在Al层的表面上形成第一非电解镀层（例如Co阻挡层14a）。

公开(公告)号：US09487865B2

公开(公告)日：2016-11-08

申请号：US14360984

申请日：2012-11-12

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Mitsuaki Iwashita

IPC: C23C18/16 ,  C23C18/42 ,  C23C18/54

CPC classification number: C23C18/1678 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/1632 ,  C23C18/1651 ,  C23C18/1676 ,  C23C18/1682 ,  C23C18/42 ,  C23C18/54

Abstract: A plating apparatus 20 includes a substrate holding device 110 configured to hold a substrate W; a discharging device 21 configured to discharge a plating liquid 35 toward the substrate W held by the substrate holding device 110; and a plating liquid supplying device 30 connected to the discharging device 21 and configured to supply the plating liquid 35 to the discharging device 21. A gas supplying device 170 is configured to heat a heating gas G having a higher specific heat capacity than air and supply the heated heating gas G toward the substrate W held by the substrate holding device 110. Further, a controller 160 is configured to control at least the discharging device 21, the plating liquid supplying device 30, and the gas supplying device 170.

Abstract translation: 电镀装置20包括：基板保持装置110，被配置为保持基板W; 排出装置21，被配置为将电镀液体35朝向由基板保持装置110保持的基板W排出; 以及连接到排出装置21并被配置为将电镀液体35供给到排出装置21的电镀液供给装置30.气体供给装置170构成为对比比热容量高于空气的加热气体G进行加热， 加热的加热气体G朝向由基板保持装置110保持的基板W。此外，控制器160被配置为至少控制排出装置21，电镀液供给装置30和气体供给装置170。

公开(公告)号：US20160247765A1

公开(公告)日：2016-08-25

申请号：US15047710

申请日：2016-02-19

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Nobutaka Mizutani ,  Yusuke Saito ,  Kazutoshi Iwai ,  Mitsuaki Iwashita

IPC: H01L23/532 ,  C23C18/16 ,  H01L21/67 ,  H01L21/288 ,  H01L21/768

CPC classification number: H01L23/53238 ,  C23C18/1653 ,  C23C18/1879 ,  C23C18/32 ,  C23C18/38 ,  C25D3/38 ,  H01L21/288 ,  H01L21/67051 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76898

Abstract: Adhesivity between a catalyst adsorption layer on a substrate and a barrier metal plating layer can be improved. The catalyst adsorption layer 22 containing a catalyst metal is formed on the substrate 2 by supplying a catalyst solution onto the substrate 2, and a bonding metal layer 22A containing a bonding metal different from the catalyst metal is formed on the catalyst adsorption layer 22 by performing a plating process with the catalyst metal as a catalyst. A barrier metal plating layer 23 is formed on the bonding metal layer 22A by performing a plating process with the bonding metal as a catalyst.

Abstract translation: 可以提高基板上的催化剂吸附层与阻挡金属镀层之间的粘合性。 通过在基板2上提供催化剂溶液，在基板2上形成含有催化剂金属的催化剂吸附层22，在催化剂吸附层22上形成含有与催化剂金属不同的接合金属的接合金属层22A， 以催化剂金属为催化剂的电镀工艺。 通过用接合金属作为催化剂进行电镀处理，在接合金属层22A上形成阻挡金属镀层23。

公开(公告)号：US09255331B2

公开(公告)日：2016-02-09

申请号：US14568384

申请日：2014-12-12

Applicant: Tokyo Electron Limited

Inventor： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC: C23C18/16 ,  C23C18/31 ,  C23C18/38

CPC classification number: C23C18/1628 ,  C23C18/1632 ,  C23C18/1678 ,  C23C18/1682 ,  C23C18/31 ,  C23C18/38

Abstract: An apparatus for a plating process includes: an outer chamber; an inner chamber covered by the outer chamber; a rotatable holding mechanism configured to hold a substrate horizontally and installed in the inner chamber; a fluid supply unit configured to supply a plating solution to a preset position on the substrate; a gas supply device configured to generate a nonreactive gas and control a temperature of the nonreactive gas; a gas supply hole configured to supply the nonreactive gas into the outer chamber and provided in a top surface of the outer chamber; a plurality of gas inlet openings provided at a sidewall of the inner chamber and spaced apart at equal distances; and a rectifying plate disposed above the substrate and below the plurality of gas inlet openings inside the inner chamber, the rectifying plate having a plurality of rectifying holes uniformly disposed in the rectifying plate.

Abstract translation: 一种电镀工艺的装置，包括：外室; 由外室覆盖的内室; 可旋转的保持机构，其构造成水平地保持基板并安装在所述内室中; 流体供给单元，其构造成将电镀液供给到所述基板上的预定位置; 气体供给装置，其构造成产生非反应性气体并控制非反应性气体的温度; 气体供给孔，其构造成将非反应性气体供给到所述外部室，并设置在所述外部室的上表面; 多个气体入口，设置在内腔的侧壁处并以相等的距离隔开; 以及整流板，其设置在所述基板的上方且在所述内部室内的所述多个气体入口的下方，所述整流板具有均匀地配置在所述整流板中的多个整流孔。

公开(公告)号：US20150096490A1

公开(公告)日：2015-04-09

申请号：US14568384

申请日：2014-12-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC: C23C18/16 ,  C23C18/31

CPC classification number: C23C18/1628 ,  C23C18/1632 ,  C23C18/1678 ,  C23C18/1682 ,  C23C18/31 ,  C23C18/38

Abstract: An apparatus for a plating process includes: an outer chamber; an inner chamber covered by the outer chamber; a rotatable holding mechanism configured to hold a substrate horizontally and installed in the inner chamber; a fluid supply unit configured to supply a plating solution to a preset position on the substrate; a gas supply device configured to generate a nonreactive gas and control a temperature of the nonreactive gas; a gas supply hole configured to supply the nonreactive gas into the outer chamber and provided in a top surface of the outer chamber; a plurality of gas inlet openings provided at a sidewall of the inner chamber and spaced apart at equal distances; and a rectifying plate disposed above the substrate and below the plurality of gas inlet openings inside the inner chamber, the rectifying plate having a plurality of rectifying holes uniformly disposed in the rectifying plate.

Abstract translation: 一种电镀工艺的装置，包括：外室; 由外室覆盖的内室; 可旋转的保持机构，其构造成水平地保持基板并安装在所述内室中; 流体供给单元，其构造成将电镀液供给到所述基板上的预定位置; 气体供给装置，其构造成产生非反应性气体并控制非反应性气体的温度; 气体供给孔，其构造成将非反应性气体供给到所述外部室，并设置在所述外部室的上表面; 多个气体入口，设置在内腔的侧壁处并以相等的距离隔开; 以及整流板，其设置在所述基板的上方且在所述内部室内的所述多个气体入口的下方，所述整流板具有均匀地配置在所述整流板中的多个整流孔。

公开(公告)号：US20150079785A1

公开(公告)日：2015-03-19

申请号：US14384861

申请日：2013-02-22

Applicant: Tokyo Electron Limited

Inventor： Nobutaka Mizutani ,  Takashi Tanaka ,  Yuichiro Inatomi ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC: H01L21/768 ,  C23C18/16 ,  C23C14/24

CPC classification number: H01L21/76867 ,  C23C14/024 ,  C23C14/046 ,  C23C14/24 ,  C23C16/0272 ,  C23C16/045 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/165 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1692 ,  C23C18/1694 ,  C23C18/1844 ,  C23C18/1893 ,  C23C18/38 ,  C23C28/322 ,  C23C28/34 ,  H01L21/288 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76898

Abstract: A plating method can improve adhesivity with a substrate. The plating method of performing a plating process on the substrate includes forming a vacuum-deposited layer 2A on the substrate 2 by performing a vacuum deposition process on the substrate 2; forming an adhesion layer 21 and a catalyst adsorption layer 22 on the vacuum-deposited layer 2A of the substrate 2; and forming a plating layer stacked body 23 having a first plating layer 23a and a second plating layer 23b which function as a barrier film on the catalyst adsorption layer 22 of the substrate 2. By forming the vacuum-deposited layer 2A, a surface of the substrate 2 can be smoothened, so that the vacuum-deposited layer 2A serving as an underlying layer can improve the adhesivity.

Abstract translation: 电镀方法可以改善与基材的粘合性。 对基板进行电镀处理的电镀方法包括通过在基板2上进行真空蒸镀工序，在基板2上形成真空蒸镀层2A， 在基板2的真空蒸镀层2A上形成粘接层21和催化剂吸附层22; 并且在基板2的催化剂吸附层22上形成具有作为阻挡膜的第一镀层23a和第二镀层23b的镀层层叠体23.通过形成真空蒸镀层2A， 基板2可以被平滑化，使得用作下层的真空沉积层2A可以改善粘合性。