摘要:
The problem is to provide a technology to reduce a light leakage current in order to obtain a good display. One kind or plurality kinds of elements chosen from argon, germanium, silicon, helium, neon, krypton, and xenon are implanted in a crystalline semiconductor layer, to distribute crystal defects due to the aforementioned element implantation by uniform and suitable density in the semiconductor film, making recombination centers of carriers, to thereby suppress alight sensitivity without spoiling a high degree of carrier movement included in a crystalline semiconductor layer.
摘要:
When the data recording is performed on a magnetic tape in various recording densities, information relating to the recording density (recording-density related information) is recorded in the data recorded on the magnetic tape. Accordingly, recording and reproduction can be properly managed by referring to the recording-density related information, even if data in various recording densities are recorded on the same magnetic tape.Further, when the recording density is altered, the drive apparatus side switches over the recording density in accordance with the quality of recording data. Thus, in the case where the data writing is not possible due to a recording error, the recording density is switched over to a lower recording density to record the data without an error, and therefore a higher flexibility is provided to a data format to be recorded on the magnetic tape.
摘要:
A pressure-type flow rate control apparatus controls the flow rate of fluid passing through an orifice to a target flow rate. The flow rate of a compressible fluid under non-critical conditions (sub-sonic) passing through the orifice is calculated by: Qc=KP2m(P1−P2)n so that the flow rate can be controlled to the target flow rate with high precision and speed. Also provided is an improved pressure-type flow rate control apparatus in which a pressure ratio P2/P1=r, obtained from an upstream pressure P1 and a downstream pressure P2 is constantly compared with a critical value r, and under critical conditions (r≦rc), the flow rate is calculated by: Qc=KP1. Under non-critical conditions (r>rc), the flow rate is calculated by Qc=KP2m(P1−P2)n.
摘要:
A communication channel allocation method allocates a communication channel to communications between a mobile terminal device and a second radio base station using a second frequency band which is close to a first frequency band used by a first radio base station, by detecting a first distance between the second radio base station and the first radio base station, detecting a second distance between the second radio base station and the mobile terminal device when the first distance is less than a first threshold, and allocating a communication channel of a frequency far from the first frequency band in the second frequency band to the communications between the second radio base station and the mobile terminal device when the second distance is less than a second threshold.
摘要:
A thermal treatment apparatus provided on a substrate includes a heat generating section the section includes a heat generating layer, a diffusion preventing layer which contacts one surface of the heat generating layer to prevent heat diffusion due to heat generation of the heat generating layer, and a cohering layer disposed between the substrate and the diffusion preventing layer.
摘要:
When semi-amorphous TFTs are used for forming a signal line driver circuit and a pixel, a large amplitude is required for driving the pixel, and a large power supply voltage is thus needed. On the other hand, when a shift register is made up of transistors having a single conductivity, a bootstrap circuit is required, and a voltage over a power supply is applied to a specific element. Therefore, not both the driving amplitude and the reliability can be achieved with a single power supply. According to the invention, a level shifter having a single conductivity is provided to solve such a problem.
摘要:
An information recording medium (10) comprises a base sheet (2a), a resin layer (2) formed on the base sheet (2a) and having a holographic region (6) provided with a diffraction grating (4) in a regular or irregular arrangement, and a ferromagnetic thin film (3) formed on the holographic region (6) of the resin layer (2). The ferromagnetic thin film (3) has a specific magnetic characteristic dependent on a holographic pattern formed in the holographic region (6). The magnetic characteristics of the ferromagnetic thin film are converted into signals corresponding to the holographic pattern.
摘要:
The present invention provides a fixing structure for a welding electrode and a welding head which enable improvement of durability of a welding electrode, improvement of work efficiency in welding, and reduction of time required for welding and also which make it possible to execute welding for a long time with high reliability. In this fixing structure, a fixed section of a welding electrode is inserted via a thermally conductive material into an inserting section of a fixing base and a peripheral surface of the fixed section of the welding electrode is uniformly contacted to the fixing base to fix the welding electrode to the fixing base.
摘要:
When a tape cassette is mounted, a tape drive apparatus judges whether the tape cassette is of a first mode (normal mode) or a second mode (multi-partition mode) based on one or both of management information that is read out from the magnetic tape and management information that is read out from a memory (MIC) incorporated in the tape cassette. The tape drive apparatus then an performs an operation setting in accordance with the mode thus judged.
摘要:
A welding method for materials to be welded which are subjected to fluoride passivation treatment, and a fluoride passivation retreatment method, wherein, when fluoride passivation retreatment is conducted after welding, there is no generation of particles or dust. The method provides superior resistance to fluorine system gases. During fluoride passivation treatment, hydrogen is added to the gas (the back shield gas) flowing through the materials to be welded. In one embodiment of the welding method, the thickness of the fluoride passivated film in a predetermined range from the butt end surfaces of the materials to be welded is set to 10 nm or less, followed by subsequent welding. Furthermore, the fluoride passivation retreatment method, includes the steps of heating at least the welded parts following welding and flowing a gas containing fluorine gas in the interior portion of the parts.