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    LASER AND PLASMA ETCH WAFER DICING USING PHYSICALLY-REMOVABLE MASK
    55.
    发明申请
    LASER AND PLASMA ETCH WAFER DICING USING PHYSICALLY-REMOVABLE MASK 有权
    激光和等离子体刻蚀使用物理可拆卸的面膜

    公开(公告)号：US20120322237A1

    公开(公告)日：2012-12-20

    申请号：US13161036

    申请日：2011-06-15

    申请人： Wei-Sheng Lei ,  Saravjeet Singh ,  Madhava Rao Yalamanchili ,  Brad Eaton ,  Ajay Kumar

    发明人： Wei-Sheng Lei ,  Saravjeet Singh ,  Madhava Rao Yalamanchili ,  Brad Eaton ,  Ajay Kumar

    IPC分类号： H01L21/78 ,  C23F1/08

    CPC分类号： B23K26/40 ,  B23K26/0624 ,  B23K26/364 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/3081 ,  H01L21/31127 ,  H01L21/78

    摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The patterned mask is then separated from the singulated integrated circuits.

    摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 一种方法包括在半导体晶片上形成掩模。 面罩覆盖并保护集成电路。 用激光划线工艺对掩模进行图案化以提供具有间隙的图案化掩模。 图案化使得集成电路之间的半导体晶片的区域露出。 然后通过图案化掩模中的间隙蚀刻半导体晶片，以形成单独的集成电路。 然后将图案化掩模与单个集成电路分离。

    HYBRID WAFER DICING APPROACH USING A POLYGON SCANNING-BASED LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS
    58.
    发明申请
    HYBRID WAFER DICING APPROACH USING A POLYGON SCANNING-BASED LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS 审中-公开
    使用基于多边形扫描的激光扫描过程和等离子体蚀刻过程的混合波形绘制方法

    公开(公告)号：US20160197015A1

    公开(公告)日：2016-07-07

    申请号：US14589600

    申请日：2015-01-05

    申请人： Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

    发明人： Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

    IPC分类号： H01L21/78 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67 ,  H01L21/268 ,  H01L21/308

    CPC分类号： H01L21/78 ,  H01L21/0275 ,  H01L21/3086 ,  H01L21/67092 ,  H01L21/67207

    摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the plurality of integrated circuits. The mask is then patterned with a polygon scanning-based laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the plurality of integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the plurality of integrated circuits.

    摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 在一个示例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护多个集成电路的层构成。 然后通过基于多边形扫描的激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露多个集成电路之间的半导体晶片的区域。 然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对多个集成电路进行分割。

    Wafer dicing from wafer backside and front side
    59.
    发明授权
    Wafer dicing from wafer backside and front side 有权
    从晶片背面和正面进行晶片切割

    公开(公告)号：US09224650B2

    公开(公告)日：2015-12-29

    申请号：US14103534

    申请日：2013-12-11

    申请人： Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

    发明人： Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

    IPC分类号： H01L21/00 ,  H01L21/46 ,  H01L21/30 ,  H01L21/78 ,  H01L21/308 ,  B23K26/32 ,  B23K26/36 ,  B23K26/40 ,  H01L21/311 ,  H01L21/3213

    CPC分类号： H01L21/78 ,  B23K26/32 ,  B23K26/364 ,  B23K26/40 ,  B23K26/402 ,  B23K2103/08 ,  B23K2103/172 ,  B23K2103/42 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/3081 ,  H01L21/31127 ,  H01L21/3213 ,  H01L21/6836 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/54433 ,  H01L2223/54473 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Approaches for backside laser scribe plus front side laser scribe and plasma etch dicing of a wafer or substrate are described. For example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side thereof and metallization on a backside thereof involves patterning the metallization on the backside with a first laser scribing process to provide a first plurality of laser scribe lines on the backside. The method also involves forming a mask on the front side. The method also involves patterning, from the front side, the mask with a second laser scribing process to provide a patterned mask with a second plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits, wherein the second plurality of scribe lines is aligned with the first plurality of scribe lines. The method also involves plasma etching the semiconductor wafer through the second plurality of scribe lines to singulate the integrated circuits.

    摘要翻译： 描述了用于背面激光划片加正面激光划线和等离子体蚀刻切割晶片或衬底的方法。 例如，在其前侧划分具有多个集成电路的半导体晶片的方法，其背面上的金属化包括用第一激光划线工艺在背面上图案化金属化，以在第一激光划线工艺上提供第一多个激光划线 背面。 该方法还涉及在前侧形成掩模。 该方法还包括利用第二激光划线工艺从正面图案化掩模，以提供具有暴露在集成电路之间的半导体晶片的区域的第二多个划线的图案化掩模，其中第二多个划线是 与第一组多个划线对准。 该方法还包括通过第二多个划线对等离子体蚀刻半导体晶片以对集成电路进行分离。

    METHOD AND SYSTEM FOR LASER FOCUS PLANE DETERMINATION IN A LASER SCRIBING PROCESS
    60.
    发明申请
    METHOD AND SYSTEM FOR LASER FOCUS PLANE DETERMINATION IN A LASER SCRIBING PROCESS 审中-公开
    激光扫描过程中激光聚焦平面测定的方法和系统

    公开(公告)号：US20150037915A1

    公开(公告)日：2015-02-05

    申请号：US14035402

    申请日：2013-09-24

    申请人： Wei-Sheng LEI ,  Brad Eaton ,  Apama IYER ,  Madhava Rao Yalamanchili ,  Ajay Kumar

    发明人： Wei-Sheng LEI ,  Brad Eaton ,  Apama IYER ,  Madhava Rao Yalamanchili ,  Ajay Kumar

    IPC分类号： H01L21/78 ,  B23K26/03 ,  B23K26/04 ,  B23K26/06

    CPC分类号： H01L21/78 ,  B23K26/032 ,  B23K26/046 ,  B23K26/0624 ,  B23K26/0661 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/42 ,  B23K2103/50

    摘要： In embodiments, a method of laser scribing a mask disposed over a semiconductor wafer includes determining a height of the semiconductor over which a mask layer is disposed prior to laser scribing the mask layer. In one embodiment the method includes: determining a height of the semiconductor wafer under the mask in a dicing street using an optical sensor and patterning the mask with a laser scribing process. The laser scribing process focuses a scribing laser beam at a plane corresponding to the determined height of the semiconductor wafer in the dicing street. Examples of determining the height of the semiconductor wafer can include directing a laser beam to the dicing street of the semiconductor wafer, which is transmitted through the mask and reflected from the wafer, and identifying an image on a surface of the wafer under the mask with a camera.

    摘要翻译： 在实施例中，激光划片设置在半导体晶片上方的掩模的方法包括确定在激光划线掩模层之前在其上设置掩模层的半导体的高度。 在一个实施例中，该方法包括：使用光学传感器在切割街道中确定半导体晶片下面的高度，并用激光划线工艺对掩模进行构图。 激光划线工艺将划线激光束聚焦在与切割街道中确定的半导体晶片的高度相对应的平面上。 确定半导体晶片的高度的示例可以包括将激光束引导到半导体晶片的切割街道，透射通过掩模并从晶片反射，并且在掩模下面在晶片的表面上识别图像， 相机。