公开(公告)号：US20090104755A1

公开(公告)日：2009-04-23

申请号：US11876538

申请日：2007-10-22

申请人： Abhijit Basu Mallick ,  Srinivas D. Nemani ,  Ellie Yieh

发明人： Abhijit Basu Mallick ,  Srinivas D. Nemani ,  Ellie Yieh

IPC分类号： H01L21/02

CPC分类号： C23C16/345 ,  C23C16/452 ,  C23C16/56

摘要： A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor.

摘要翻译： 一种在衬底上沉积含硅和氮的膜的方法。 该方法包括将含硅前体引入到包含基底的沉积室中，其中含硅前体包含至少两个硅原子。 该方法还包括用位于沉积室外部的远程等离子体系统产生至少一种自由基氮前体。 此外，该方法包括将自由基氮前体引入沉积室，其中自由基含氮和含硅前体将含硅和氮的膜反应并沉积在基底上。 此外，该方法包括在蒸汽环境中退火含硅和氮的膜以形成氧化硅膜，其中蒸汽环境包括水和酸性蒸汽。

公开(公告)号：US07494628B2

公开(公告)日：2009-02-24

申请号：US11408678

申请日：2006-04-21

申请人： Himanshu Pokharna ,  Phong Le ,  Srinivas D. Nemani

发明人： Himanshu Pokharna ,  Phong Le ,  Srinivas D. Nemani

IPC分类号： F01N3/08

CPC分类号： C01B7/191 ,  B01D53/68 ,  B01D2251/202 ,  B01D2257/2027 ,  C23C16/4405 ,  C23C16/4412

摘要： Method and apparatus for abating F2 from by-products generated during cleaning of a processing chamber. F2 abatement is efficiently performed by directly injecting H2 in line with a foreline exiting the processing chamber. A tube which is highly resistant to oxidation and corrosive gases, even at high temperature, is connected in line with the foreline as part of the exhaust line of the processing chamber. A cooling jacket may be provided for cooling the tube, since the reaction between F2 and H2 is exothermic. A pressure monitoring arrangement may also be employed to insure that pressure within a hydrogen line, that feeds the injection of H2 into the tube, does not exceed a predetermined pressure value.

摘要翻译： 用于在处理室清洁期间产生的副产物减轻F2的方法和装置。 通过直接喷射与排出处理室的前级管线一致的H2来有效地执行F2减排。 即使在高温下，耐氧化和腐蚀性气体的管也与作为处理室的排气管线的一部分的前级管线连接。 可以提供冷却套管来冷却管，因为F2和H2之间的反应是放热的。 还可以采用压力监测装置来确保将氢气注入管内的氢气管线内的压力不超过预定的压力值。

公开(公告)号：US07189639B2

公开(公告)日：2007-03-13

申请号：US11055141

申请日：2005-02-10

申请人： Padmanabhan Krishnaraj ,  Michael S. Cox ,  Bruno Geoffrion ,  Srinivas D. Nemani

发明人： Padmanabhan Krishnaraj ,  Michael S. Cox ,  Bruno Geoffrion ,  Srinivas D. Nemani

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76837 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/76224

摘要： A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature.

摘要翻译： 公开了一种用于在具有多个间隙的衬底上沉积电介质膜的方法，所述间隙形成在设置在高密度等离子体衬底处理室衬底中的相邻凸起表面之间。 在一个实施方案中，该方法包括将包含锗源，硅源和氧化剂的工艺气体流入衬底处理室; 形成具有来自工艺气体的同时沉积和溅射组分的高密度等离子体，以沉积包含硅，锗和氧的电介质膜; 并且在形成高密度等离子体的步骤期间，将基板处理室内的压力保持在小于100mTorr，同时允许电介质膜被加热到其玻璃化转变温度以上。

公开(公告)号：US07060330B2

公开(公告)日：2006-06-13

申请号：US10302393

申请日：2002-11-22

申请人： Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric Hollar ,  Kang Sub Yim

发明人： Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric Hollar ,  Kang Sub Yim

IPC分类号： C23C16/56

CPC分类号： C23C16/401 ,  B05D1/60 ,  B05D3/068 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/7681

摘要： The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2.5 and a hardness greater than 0.5 GPa.

摘要翻译： 本发明通常提供使用电子束处理沉积低介电常数膜的方法。 在一个方面，该方法包括在足以沉积包含至少一个环状基团的非固化膜的沉积条件下将包含一种或多种有机硅化合物和一种或多种具有至少一个环状基团的烃化合物的气体混合物递送到基底表面 组在基板表面上。 该方法还包括在足以提供小于2.5的介电常数和大于0.5GPa的硬度的固化条件下使用电子束从非固化膜中基本上除去至少一个环状基团。

公开(公告)号：US07060234B2

公开(公告)日：2006-06-13

申请号：US09908668

申请日：2001-07-18

申请人： Himanshu Pokharna ,  Phong Le ,  Srinivas D. Nemani

发明人： Himanshu Pokharna ,  Phong Le ,  Srinivas D. Nemani

IPC分类号： A62D3/00

CPC分类号： C01B7/191 ,  B01D53/68 ,  B01D2251/202 ,  B01D2257/2027 ,  C23C16/4405 ,  C23C16/4412

摘要： Method and apparatus for abating F2 from byproducts generated during cleaning of a processing chamber. F2 abatement is efficiently performed by directly injecting H2 in line with a foreline exiting the processing chamber. A tube which is highly resistant to oxidation and corrosive gases, even at high temperature, is connected in line with the foreline as part of the exhaust line of the processing chamber. A cooling jacket may be provided for cooling the tube, since the reaction between F2 and H2 is exothermic. A pressure monitoring arrangement may also be employed to insure that pressure within a hydrogen line, that feeds the injection of H2 into the tube, does not exceed a predetermined pressure value.

摘要翻译： 用于在处理室清洁期间产生的副产物减轻F 2的方法和装置。 通过直接喷射与排出处理室的前级管线一致的H 2 2来有效地执行F 2 2减排。 即使在高温下，耐氧化和腐蚀性气体的管也与作为处理室的排气管线的一部分的前级管线连接。 可以提供冷却套管来冷却管，因为F 2和H 2 2之间的反应是放热的。 还可以采用压力监测装置来确保将管线内注入H 2 H的氢气管线内的压力不超过预定的压力值。

公开(公告)号：US07056560B2

公开(公告)日：2006-06-06

申请号：US10773060

申请日：2004-02-04

申请人： Kang Sub Yim ,  Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric P. Hollar

发明人： Kang Sub Yim ,  Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric P. Hollar

IPC分类号： C23C16/56 ,  C23C16/48 ,  C23C16/42 ,  C23C16/40 ,  H01L21/473

CPC分类号： C23C16/401 ,  B05D1/60 ,  B05D3/068 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/3148 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76825

摘要： A method for depositing a low dielectric constant film is provided by reacting a gas mixture including one or more linear, oxygen-free organosilicon compounds, one or more oxygen-free hydrocarbon compounds comprising one ring and one or two carbon-carbon double bonds in the ring, and one or more oxidizing gases. Optionally, the low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment.

摘要翻译： 一种沉积低介电常数膜的方法是通过使含有一种或多种线性无氧有机硅化合物的气体混合物，一种或多种包含一个环和一个或两个碳 - 碳双键的无氧烃化合物反应在 环和一种或多种氧化性气体。 任选地，低介电常数膜在沉积后进行后处理。 一方面，后处理是电子束处理。

公开(公告)号：US09006106B2

公开(公告)日：2015-04-14

申请号：US13889550

申请日：2013-05-08

申请人： Chia-Ling Kao ,  Kwang-soo Kim ,  Sean S. Kang ,  Srinivas D. Nemani

发明人： Chia-Ling Kao ,  Kwang-soo Kim ,  Sean S. Kang ,  Srinivas D. Nemani

IPC分类号： H01L21/311

CPC分类号： H01L21/31144 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76814 ,  H01L2221/1063

摘要： Methods of removing metal hardmasks in the presence of ultra low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film includes forming a pattern in a metal nitride hardmask layer formed above a low-k dielectric film formed above a substrate. The method also includes etching, using the metal nitride hardmask layer as a mask, the pattern at least partially into the low-k dielectric film, the etching involving using a plasma etch based on SiFx. The etching also involves forming an SiOx passivation layer at least on sidewalls of the low-k dielectric film formed during the etching. The method also includes removing the metal nitride hardmask layer by a dry etch process, where the SiOx passivation layer protects the low-k dielectric film during the removing.

摘要翻译： 描述了在超低k电介质膜存在下去除金属硬掩模的方法。 在一个示例中，图案化低k电介质膜的方法包括在形成在衬底上方的低k电介质膜上形成的金属氮化物硬掩模层中形成图案。 该方法还包括使用金属氮化物硬掩模层作为掩模的蚀刻，该图案至少部分地进入低k电介质膜，该蚀刻涉及使用基于SiFx的等离子体蚀刻。 蚀刻还包括至少在蚀刻期间形成的低k电介质膜的侧壁上形成SiO x钝化层。 该方法还包括通过干蚀刻工艺去除金属氮化物硬掩模层，其中SiO x钝化层在去除期间保护低k绝缘膜。

公开(公告)号：US08940642B2

公开(公告)日：2015-01-27

申请号：US13187304

申请日：2011-07-20

申请人： Srinivas D. Nemani ,  Yifeng Zhou ,  Dmitry Lubomirsky ,  Ellie Yieh

发明人： Srinivas D. Nemani ,  Yifeng Zhou ,  Dmitry Lubomirsky ,  Ellie Yieh

IPC分类号： H01L21/311 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/02

CPC分类号： H01L21/31116 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76826

摘要： Methods of multiple patterning of low-k dielectric films are described. For example, a method includes forming and patterning a first mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. A second mask layer is formed and patterned above the first mask layer. A pattern of the second mask layer is transferred at least partially into the low-k dielectric layer by modifying first exposed portions of the low-k dielectric layer with a first plasma process and removing the modified portions of the low-k dielectric layer. Subsequently, a pattern of the first mask layer is transferred at least partially into the low-k dielectric layer by modifying second exposed portions of the low-k dielectric layer with a second plasma process and removing the modified portions of the low-k dielectric layer.

摘要翻译： 描述了低k电介质膜的多次图案化方法。 例如，一种方法包括在低k电介质层上形成和图案化第一掩模层，低k电介质层设置在衬底之上。 第二掩模层在第一掩模层之上形成并图案化。 通过用第一等离子体处理修改低k电介质层的第一暴露部分并去除低k电介质层的修改部分，将第二掩模层的图案至少部分地转移到低k电介质层中。 随后，通过用第二等离子体处理修改低k电介质层的第二暴露部分，将第一掩模层的图案至少部分地转移到低k电介质层中，并且去除低k电介质层的修饰部分 。

公开(公告)号：US20140213060A1

公开(公告)日：2014-07-31

申请号：US14159832

申请日：2014-01-21

申请人： Chia-Ling Kao ,  Sean S. Kang ,  Srinivas D. Nemani

发明人： Chia-Ling Kao ,  Sean S. Kang ,  Srinivas D. Nemani

IPC分类号： H01L21/311

CPC分类号： H01L21/31144 ,  H01L21/31116 ,  H01L21/321 ,  H01L21/32136 ,  H01L21/76802

摘要： Methods of patterning low-k dielectric films are described. In an example, In an embodiment, a method of patterning a low-k dielectric film involves forming and patterning a metal nitride mask layer above a low-k dielectric layer. The low-k dielectric layer is disposed above a substrate. The method also involves passivating the metal nitride mask layer by treating with a plasma based on O2/N2/SixFy. The method also involves etching a portion of the low-k dielectric layer.

摘要翻译： 描述了低k介电膜图案的方法。 在一个实施例中，在一个实施例中，图案化低k电介质膜的方法涉及在低k电介质层上形成和图案化金属氮化物掩模层。 低k电介质层设置在衬底之上。 该方法还涉及通过用基于O 2 / N 2 / SixFy的等离子体处理钝化金属氮化物掩模层。 该方法还涉及蚀刻低k电介质层的一部分。

公开(公告)号：US07989366B2

公开(公告)日：2011-08-02

申请号：US11844810

申请日：2007-08-24

申请人： Jeffrey C. Munro ,  Srinivas D. Nemani ,  Young S. Lee ,  Marlon Menezes ,  Christopher Dennis Bencher ,  Vijay Parihar

发明人： Jeffrey C. Munro ,  Srinivas D. Nemani ,  Young S. Lee ,  Marlon Menezes ,  Christopher Dennis Bencher ,  Vijay Parihar

IPC分类号： H01L21/00

CPC分类号： H01L21/268 ,  H01L21/26513

摘要： Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500° C. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.

摘要翻译： 公开了用于激活掺杂半导体衬底中的掺杂剂的方法。 碳前体流入其中设置掺杂半导体衬底的衬底处理室。 在基板处理室中由碳前体形成等离子体。 用等离子体沉积在衬底上的碳膜。 在沉积低于500℃的碳膜的同时保持基板的温度。沉积的碳膜暴露于电磁辐射小于10ms的时间段，并且在电磁波包括的波长处具有大于0.3的消光系数 辐射。