公开(公告)号：US20070096189A1

公开(公告)日：2007-05-03

申请号：US11594780

申请日：2006-11-09

申请人： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

发明人： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

IPC分类号： H01L29/94 ,  H01L21/8242

CPC分类号： H01L29/517 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31604 ,  H01L27/10814 ,  H01L28/40 ,  H01L28/60 ,  H01L29/513

摘要： In order to supply a semiconductor device having high-reliability, there are used a first capacitor electrode, a capacitor insulating film formed in contact with the first capacitor electrode and mainly composed of titanium oxide, and a second capacitor electrode formed in contact with the capacitor insulating film, and there is used a conductive oxide film mainly composed of ruthenium oxide or iridium oxide for the first capacitor electrode and the second capacitor electrode. Alternatively, there is used a gate insulating film having a titanium silicate film and titanium oxide which suppress leakage current.

摘要翻译： 为了提供具有高可靠性的半导体器件，使用第一电容器电极，形成为与第一电容器电极接触并主要由氧化钛构成的电容器绝缘膜，以及形成为与电容器接触的第二电容器电极 并且使用主要由氧化钌或氧化铱构成的导电氧化物膜用于第一电容器电极和第二电容器电极。 或者，使用具有抑制漏电流的钛硅酸盐膜和氧化钛的栅极绝缘膜。

公开(公告)号：US20060226555A1

公开(公告)日：2006-10-12

申请号：US11449814

申请日：2006-06-09

申请人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

发明人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC分类号： H01L23/48

CPC分类号： H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

公开(公告)号：US20060223268A1

公开(公告)日：2006-10-05

申请号：US11329990

申请日：2006-01-10

申请人： Hiroshi Moriya ,  Tomio Iwasaki

发明人： Hiroshi Moriya ,  Tomio Iwasaki

IPC分类号： H01L21/336 ,  H01L27/12 ,  H01L21/4763 ,  H01L27/01 ,  H01L31/0392

CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675

摘要： An object of the present invention is to provide a phase-change random access memory which hardly causes the peeling of a phase-change film in a production process. In the present invention, the surface of an insulating film around the phase-change film is positioned to a more substrate side than an interface between the insulating film and the phase-change film on the insulating film is.

摘要翻译： 本发明的目的是提供一种在生产过程中几乎不引起相变膜剥离的相变随机存取存储器。 在本发明中，相变膜周围的绝缘膜的表面位于比绝缘膜上的绝缘膜和相变膜之间的界面更多的基板侧。

公开(公告)号：US07009279B2

公开(公告)日：2006-03-07

申请号：US10845290

申请日：2004-05-12

申请人： Shingo Nasu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Yukihiro Kumagai ,  Shuji Ikeda

发明人： Shingo Nasu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Yukihiro Kumagai ,  Shuji Ikeda

IPC分类号： H01L31/117

CPC分类号： H01L29/167 ,  H01L21/2807 ,  H01L29/1004 ,  H01L29/1054 ,  H01L29/4966 ,  H01L29/7378

摘要： In semiconductor devices, a semiconductor device is provided which is high in reliability while suppressing changes in characteristics such as threshold voltages. In a semiconductor device which has a gate dielectric film above a semiconductor substrate and also has above the gate dielectric film a gate electrode film made of silicon germanium chosen as its main constituent material, or alternatively in a semiconductor device which has beneath the gate dielectric film a channel made of silicon as its main constituent material and which has below the channel a channel underlayer film made of silicon germanium as its main constituent material, a specifically chosen dopant, such as cobalt (Co) or carbon (C) or nitrogen (N), is added to the gate electrode and the channel underlayer film, for use as the unit for suppressing diffusion of germanium in the gate electrode or in the channel underlayer film.

摘要翻译： 在半导体器件中，提供了一种在抑制诸如阈值电压的特性变化的同时高可靠性的半导体器件。 在半导体器件中，在半导体衬底上方具有栅极电介质膜，并且还具有栅极电介质膜上方的由选择为主要构成材料的硅锗制成的栅电极膜，或者替代地在栅极电介质膜下方的半导体器件 由硅作为其主要构成材料的通道，并且在通道下方具有由硅锗作为其主要构成材料的沟道下层膜，特别选择的掺杂剂，例如钴（Co）或碳（C）或氮（N ）添加到栅极电极和沟道下层膜中，用作抑制栅极电极或沟道下层膜中锗扩散的单元。

公开(公告)号：US06960832B2

公开(公告)日：2005-11-01

申请号：US10761333

申请日：2004-01-22

申请人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shuji Ikeda

发明人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shuji Ikeda

IPC分类号： H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L23/12 ,  H01L21/00

CPC分类号： H01L29/665 ,  H01L21/28518 ,  H01L21/76877

摘要： In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.

摘要翻译： 在具有钴硅化物膜的半导体器件中，钴硅化物膜中至少含有镍或铁，以防止附着于薄膜变薄的电阻上升。

公开(公告)号：US20050156150A1

公开(公告)日：2005-07-21

申请号：US10975522

申请日：2004-10-29

申请人： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideyuki Matsuoka ,  Norikatsu Takaura

发明人： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideyuki Matsuoka ,  Norikatsu Takaura

IPC分类号： B41M5/26 ,  G11B7/24 ,  G11B7/241 ,  G11B7/243 ,  G11B7/252 ,  G11B7/254 ,  G11B7/257 ,  H01L27/24 ,  H01L29/02 ,  H01L45/00

CPC分类号： G11B7/2403 ,  G11B7/00454 ,  G11B7/243 ,  G11B7/252 ,  G11B7/257 ,  G11C13/0004 ,  G11C2213/72 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144

摘要： A phase change memory comprises: a substrate; an insulation film formed on a main surface of the substrate; a first electrode deposited on the insulation film; a phase change recording film deposited on the first electrode; and a second electrode deposited on the phase change recording film. The phase change recording film contains at least two of Ge, Sb and Te as main constituting elements thereof. The first electrode comprises material of group of Ti, Si and N, or group of Ta, Si and N as main constituting material thereof.

摘要翻译： 相变存储器包括：基板; 形成在所述基板的主表面上的绝缘膜; 沉积在绝缘膜上的第一电极; 沉积在第一电极上的相变记录膜; 以及沉积在相变记录膜上的第二电极。 相变记录膜包含Ge，Sb和Te中的至少两个作为其主要构成元素。 第一电极包括Ti，Si和N组的材料，或Ta，Si和N组作为其主要构成材料。

公开(公告)号：US20050079667A1

公开(公告)日：2005-04-14

申请号：US10503350

申请日：2003-02-05

申请人： Tomio Iwasaki ,  Norio Ishitsuka ,  Hideo Miura

发明人： Tomio Iwasaki ,  Norio Ishitsuka ,  Hideo Miura

IPC分类号： H01L21/265 ,  H01L21/336 ,  H01L21/8244 ,  H01L21/8247 ,  H01L27/11 ,  H01L27/115 ,  H01L29/49 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L21/425 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L29/6659 ,  H01L21/26513 ,  H01L29/4925 ,  H01L29/4983 ,  H01L29/7833

摘要： A semiconductor device having a high degree of reliability is provided. A second object of the invention is to provide a semiconductor device of high yield. The semiconductor includes a silicon substrate, a gate dielectric film formed on one main surface of the silicon substrate, a gate electrode formed by being stacked on the gate dielectric film and a diffusion layer containing arsenic and phosphorus. Both of the concentration of the highest concentration portion of arsenic and the concentration of the highest concentration portion of phosphorus are each at 1026 atoms/m3 or more and 1027 atoms/m3 or less, and the depth of the highest concentration portion of phosphorus from the surface of the silicon substrate is less than the depth of the highest concentration portion of arsenic.

摘要翻译： 提供了具有高可靠性的半导体器件。 本发明的第二个目的是提供一种高产率的半导体器件。 半导体包括硅衬底，形成在硅衬底的一个主表面上的栅极电介质膜，通过层叠在栅极电介质膜上形成的栅电极和含有砷和磷的扩散层。 砷的最高浓度部分的浓度和磷的最高浓度部分的浓度分别为10 26个/ m 3以上且10 27个/ m 3以下， 并且来自硅衬底的表面的磷的最高浓度部分的深度小于砷的最高浓度部分的深度。

公开(公告)号：US06856021B1

公开(公告)日：2005-02-15

申请号：US09648455

申请日：2000-08-28

申请人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

发明人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

CPC分类号： H01L21/76844 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/7685 ,  H01L23/53219 ,  H01L23/53223 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is provided which includes a semiconductor substrate, metal conductors formed on a side of a main face of the substrate, which metal conductors contain aluminum as a main constituent thereof, and copper as an additive element, the metal conductors being made to contain such an element as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper.

摘要翻译： 提供了一种半导体器件，其包括半导体衬底，形成在衬底的主面一侧的金属导体，该金属导体以铝为主要成分，铜作为添加元素，金属导体被制成含有 抑制铜的析出或使金属导体附近具有这样的膜的元素，以抑制铜的沉淀，或者使该膜与金属导体相邻，以抑制铜的析出 。

公开(公告)号：US20050024811A1

公开(公告)日：2005-02-03

申请号：US10923002

申请日：2004-08-23

申请人： Hiroshi Moriya ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Shinpei Iijima ,  Isamu Asano ,  Yuzuru Ohji ,  Yoshitaka Nakamura

发明人： Hiroshi Moriya ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Shinpei Iijima ,  Isamu Asano ,  Yuzuru Ohji ,  Yoshitaka Nakamura

IPC分类号： H01L27/10 ,  H01L21/02 ,  H01L21/8242 ,  H01L27/108 ,  H01G4/008

CPC分类号： H01L28/60 ,  H01L27/10814 ,  H01L28/55

摘要： A semiconductor device equipped with information storage capacitor comprising a first capacitor electrode, an oxide film, a second capacitor electrode and insulating films containing silicon as a main constituting element, wherein at least one of first and second capacitor electrodes contains as a main constituting element at least one element selected from rhodium, ruthenium, iridium, osmium and platinum, and as an adding element at least one element selected from palladium, nickel, cobalt and titanium, is excellent in adhesiveness between the capacitor electrodes and the insulating films.

摘要翻译： 一种配备有信息存储电容器的半导体器件，包括第一电容器电极，氧化物膜，第二电容器电极和以硅为主要构成元素的绝缘膜，其中，第一和第二电容器电极中的至少一个包含作为主要构成元素 选自铑，钌，铱，锇和铂中的至少一种元素，并且作为添加元素，选自钯，镍，钴和钛中的至少一种元素，电容器电极和绝缘膜之间的粘附性优异。

公开(公告)号：US06489648B2

公开(公告)日：2002-12-03

申请号：US09944485

申请日：2001-08-30

申请人： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

发明人： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

IPC分类号： H01L27108

CPC分类号： H01L29/517 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10873 ,  H01L28/56 ,  H01L28/57 ,  H01L29/4975 ,  H01L29/513

摘要： A semiconductor device has a gate dielectric film formed of zirconium oxide or hafnium oxide as a chief material and a gate electrode film in contact with the gate dielectric film on one principal surface side of a silicon substrate. The gate dielectric film contains an addition element to prevent diffusion of oxygen.