公开(公告)号：US06958656B2

公开(公告)日：2005-10-25

申请号：US10878308

申请日：2004-06-29

申请人： Kiichi Yamashita ,  Tomonori Tanoue ,  Shizuo Kondo

发明人： Kiichi Yamashita ,  Tomonori Tanoue ,  Shizuo Kondo

IPC分类号： H03G3/10 ,  H03G7/00 ,  H04B1/04 ,  H04B7/26 ,  H03G3/30

CPC分类号： H03F1/02 ,  H03F1/30 ,  H03F3/21 ,  H03G7/001 ,  H03G7/06

摘要： The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.

摘要翻译： 本发明提供一种功率放大器模块，其特征在于：其输出功率特性随着输入控制电压的变化而平滑地变化; 其控制灵敏度在宽动态范围内稳定。 通过同样的方式，用于增益设定的空载电流被提供给功率放大器模块的单个放大器元件或放大器元件的多个级的全部。 通过使该怠速电流相对于输入控制电压发生指数变化，本发明实现与输入控制电压成比例的输出功率控制。

公开(公告)号：US06771128B1

公开(公告)日：2004-08-03

申请号：US09692182

申请日：2000-10-20

申请人： Kiichi Yamashita ,  Tomonori Tanoue ,  Shizuo Kondo

发明人： Kiichi Yamashita ,  Tomonori Tanoue ,  Shizuo Kondo

IPC分类号： H03G330

CPC分类号： H03F1/02 ,  H03F1/30 ,  H03F3/21 ,  H03G7/001 ,  H03G7/06

摘要： The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.

公开(公告)号：US06674323B2

公开(公告)日：2004-01-06

申请号：US10192589

申请日：2002-07-11

申请人： Osamu Kagaya ,  Masami Ohnishi ,  Kenji Sekine ,  Tomonori Tanoue

发明人： Osamu Kagaya ,  Masami Ohnishi ,  Kenji Sekine ,  Tomonori Tanoue

IPC分类号： H03F114

CPC分类号： H03F3/602 ,  H03F1/0277 ,  H03F1/302 ,  H03F1/56 ,  H03F3/195 ,  H03F3/245 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/429 ,  H03F2200/555 ,  H03F2203/7206 ,  H03F2203/7215 ,  H03F2203/7221 ,  H03F2203/7231 ,  H03F2203/7236

摘要： To provide a small-sized high frequency power amplifier for preventing oscillation by a small number of switching circuits and outputting high power and low power with high efficiencies, a high frequency power amplifier module and a portable telephone, the high frequency power amplifier is constituted by an amplifying circuit A and an amplifying circuit B connected in parallel, a size of a transistor at an output stage of the amplifying circuit B is made to be equal to or smaller than ¼ of a size of a transistor of an output stage of the amplifying circuit A and a switching circuit is connected between a signal line forward from the output stage of the amplifying circuit A and a ground terminal.

摘要翻译： 为了提供一种小型高频功率放大器，用于防止少量开关电路的振荡并以高效率输出高功率和低功率，高频功率放大器模块和便携式电话，高频功率放大器由 放大电路A和放大电路B并联连接，将放大电路B的输出级的晶体管的尺寸设定为放大电路的输出级的晶体管的尺寸的1/4 电路A和开关电路连接在从放大电路A的输出级向前方的信号线与接地端子之间。

公开(公告)号：US5949097A

公开(公告)日：1999-09-07

申请号：US932939

申请日：1997-09-17

申请人： Koji Hirata ,  Tomonori Tanoue ,  Hiroshi Masuda ,  Hiroyuki Uchiyama ,  Kazuhiro Mochizuki

发明人： Koji Hirata ,  Tomonori Tanoue ,  Hiroshi Masuda ,  Hiroyuki Uchiyama ,  Kazuhiro Mochizuki

IPC分类号： H01L21/331 ,  H01L21/768 ,  H01L27/06 ,  H01L29/737 ,  H01L29/04

CPC分类号： H01L29/66318 ,  H01L27/0605 ,  H01L29/7371

摘要： The present invention relates to a contact structure not only for a semiconductor device having a hetero-junction bipolar transistor or a hetero-insulated gate field effect transistor but also for semiconductor devices at large. In a semiconductor layer of a polycrystalline or amorphous undoped III-V compound semiconductor or an alloy thereof, a through hole is formed for contact. The size of the through hole is set to permit exposure of at least part of a first conductor layer and a dielectric layer, such as an Si compound, present around the first conductor layer, and a second conductor layer is formed within the through hole so as to contact the first conductor layer. Since the semiconductor layer can be subjected to a selective dry etching for the dielectric layer, the dielectric layer is not etched at the time of forming the above through hole in the semiconductor layer. As a result an electric short-circuit of the second conductor layer with a single crystal semiconductor layer which underlies the dielectric layer can be prevented.

摘要翻译： 本发明涉及不仅具有异质结双极晶体管或异质绝缘栅场效应晶体管的半导体器件的接触结构，而且还涉及用于半导体器件的半导体器件。 在多晶或非晶未掺杂的III-V族化合物半导体的半导体层或其合金中，形成用于接触的通孔。 通孔的尺寸被设定为允许暴露在第一导体层周围的第一导体层和诸如Si化合物的电介质层的至少一部分，并且在通孔内形成第二导体层，因此 以接触第一导体层。 由于可以对半导体层进行电介质层的选择性干蚀刻，所以在形成半导体层中的上述通孔时不会蚀刻电介质层。 结果，可以防止具有位于电介质层下面的单晶半导体层的第二导体层的电短路。

公开(公告)号：US5017517A

公开(公告)日：1991-05-21

申请号：US518035

申请日：1990-05-02

申请人： Kazuhiro Mochizuki ,  Tomonori Tanoue ,  Chushirou Kusano ,  Hiroshi Masuda ,  Katsuhiko Mitani

发明人： Kazuhiro Mochizuki ,  Tomonori Tanoue ,  Chushirou Kusano ,  Hiroshi Masuda ,  Katsuhiko Mitani

IPC分类号： H01L29/73 ,  H01L21/20 ,  H01L21/28 ,  H01L21/331 ,  H01L29/205 ,  H01L29/737 ,  H01L29/80

CPC分类号： H01L29/66318 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02491 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/28 ,  Y10S148/005 ,  Y10S148/011 ,  Y10S148/026 ,  Y10S438/976

摘要： A method for fabricating a semiconductor device comprises the steps of forming the first semiconductor layer on a semiconductor substrate, forming a surface protection layer of antimony (Sb) or the material having Sb as its main component, executing the other steps necessary for the fabrication of the semiconductor device, removing the surface protection layer, and forming, on the first semiconductor layer thus exposed, the second semiconductor layer.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体衬底上形成第一半导体层，形成锑（Sb）的表面保护层或具有Sb的材料作为其主要成分，执行制造所需的其它步骤 半导体器件，去除表面保护层，并且在由此暴露的第一半导体层上形成第二半导体层。

公开(公告)号：US08229373B2

公开(公告)日：2012-07-24

申请号：US11430172

申请日：2006-05-09

申请人： Tomonori Tanoue ,  Hidetoshi Matsumoto

发明人： Tomonori Tanoue ,  Hidetoshi Matsumoto

IPC分类号： H01Q11/12

CPC分类号： H03G3/3042 ,  H03F1/0261 ,  H03F3/191 ,  H03F3/24 ,  H03F2200/105 ,  H03F2200/207 ,  H03F2200/294 ,  H03F2200/372 ,  H03F2200/471 ,  H03F2200/99

摘要： A high frequency power amplifier maintains an excellent linearity regardless of a fluctuation of a load impedance and is downsized. The high frequency power amplifier detects an AC voltage amplitude at an output terminal of a final amplification stage transistor, and suppresses an input signal amplitude of a power amplifier when the voltage amplitude exceeds a predetermined threshold value.

公开(公告)号：US20100230789A1

公开(公告)日：2010-09-16

申请号：US12724268

申请日：2010-03-15

申请人： Chiko Yorita ,  Yuji Shirai ,  Hirokazu Nakajima ,  Hiroshi Ozaku ,  Tomonori Tanoue ,  Hiroshi Okabe ,  Tsutomu Hara

发明人： Chiko Yorita ,  Yuji Shirai ,  Hirokazu Nakajima ,  Hiroshi Ozaku ,  Tomonori Tanoue ,  Hiroshi Okabe ,  Tsutomu Hara

IPC分类号： H01L23/552 ,  H01L21/78 ,  H01L21/56

CPC分类号： H01L23/66 ,  H01L23/3121 ,  H01L23/3677 ,  H01L23/49838 ,  H01L23/50 ,  H01L23/5383 ,  H01L23/552 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L2223/6644 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H05K1/0218 ,  H05K3/0052 ,  H05K3/284 ,  H05K9/0084 ,  H05K2201/09036 ,  H05K2201/0909 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A technology is provided which allows a reduction in the size of a semiconductor device without degrading an electromagnetic shielding effect and reliability against reflow heating. After a plurality of components are mounted over a component mounting surface of a module substrate, a resin is formed so as to cover the mounted components. Further, over surfaces (upper and side surfaces) of the resin, a shield layer including a laminated film of a Cu plating film and an Ni plating film is formed. In the shield layer, a plurality of microchannel cracks are formed randomly along grain boundaries and in a net-like configuration without being coupled to each other in a straight line, and form a plurality of paths extending from the resin to a surface of the shield layer by the microchannel cracks.

摘要翻译： 提供了一种技术，其允许减小半导体器件的尺寸而不降低电磁屏蔽效应和不受回流加热的可靠性。 在将多个部件安装在模块基板的部件安装表面上之后，形成树脂以覆盖安装的部件。 此外，树脂的表面（上表面和侧表面）上形成包括Cu镀膜和Ni镀膜的层叠膜的屏蔽层。 在屏蔽层中，沿着晶界和网状构造随机地形成多个微通道裂纹，而不以直线彼此连接，并且形成从树脂延伸到屏蔽层表面的多个路径 层由微通道裂缝。

公开(公告)号：US07482875B2

公开(公告)日：2009-01-27

申请号：US11209691

申请日：2005-08-24

申请人： Tomonori Tanoue ,  Masami Ohnishi

发明人： Tomonori Tanoue ,  Masami Ohnishi

IPC分类号： H03F3/04

CPC分类号： H03F1/26 ,  H01L2924/0002 ,  H03F1/42 ,  H03F3/04 ,  H03F3/195 ,  H03F2200/36 ,  H01L2924/00

摘要： The invention provides a wide-band, low-noise, and small-sized high frequency power amplifier that has small temperature dependence of the gain and is excellent in input matching. A parallel circuit consisting of a resistor whose resistance depends strongly on temperature and a conventional resistor is inserted serially into a signal path in an input matching circuit of an amplification unit, and resistances of the resistors are set to appropriate values, for example, about 2/3 times an input impedance of the amplification unit.

摘要翻译： 本发明提供了宽带，低噪声，小尺寸的高频功率放大器，其具有较小的增益温度依赖性，输入匹配性优异。 由电阻强烈依赖于温度的电阻和常规电阻构成的并联电路串联插入到放大单元的输入匹配电路中的信号路径中，并且电阻器的电阻被设置为适当的值，例如约2 / 3倍于放大单元的输入阻抗。

公开(公告)号：US07368996B2

公开(公告)日：2008-05-06

申请号：US11209692

申请日：2005-08-24

申请人： Tomonori Tanoue ,  Masami Ohnishi ,  Hidetoshi Matsumoto ,  Akira Kuriyama

发明人： Tomonori Tanoue ,  Masami Ohnishi ,  Hidetoshi Matsumoto ,  Akira Kuriyama

IPC分类号： H03F3/45

CPC分类号： H03F3/191 ,  H03F1/26 ,  H03F3/24 ,  H03F3/45085 ,  H03F2200/09 ,  H03F2200/315 ,  H03F2200/318 ,  H03F2200/372 ,  H03F2200/391 ,  H03F2203/45638 ,  H03G1/0023 ,  H03G3/3042

摘要： Disclosed is a power amplifier having highly stable and excellent controllability, and having low noise in comparison with conventional power amplifiers. With the power amplifier, a differential amplifier made up of transistors Q1, Q2 is provided in the initial stage thereof, and baluns doubling as inter-stage matching circuits, comprised of Cp1, Cp2, Lp1, and Ct1, Ct2, Lt1, respectively, are provided between the initial stage, and a second stage while an unbalanced single-ended circuit is provided in the second stage. The differential amplifier has an emitter-coupled type configuration for coupling both emitters with each other, and output control of the amplifier in the initial stage is executed by varying current of a current source coupled to both the emitters.

摘要翻译： 公开了具有高度稳定和优异的可控性的功率放大器，并且与常规功率放大器相比具有低噪声。 使用功率放大器，在其初始阶段提供由晶体管Q 1，Q 2组成的差分放大器，并且平衡 - 不平衡变换器作为由Cp 1，Cp 2，Lp 1和Ct 1组成的级间匹配电路， Ct 2，Lt 1分别设置在初级和第二级之间，而在第二级提供不平衡单端电路。 差分放大器具有用于将两个发射极彼此耦合的发射极耦合型配置，并且通过改变耦合到两个发射极的电流源的电流来执行初始阶段放大器的输出控制。

公开(公告)号：US20060267688A1

公开(公告)日：2006-11-30

申请号：US11430172

申请日：2006-05-09

申请人： Tomonori Tanoue ,  Hidetoshi Matsumoto

发明人： Tomonori Tanoue ,  Hidetoshi Matsumoto

IPC分类号： H03G3/00

CPC分类号： H03G3/3042 ,  H03F1/0261 ,  H03F3/191 ,  H03F3/24 ,  H03F2200/105 ,  H03F2200/207 ,  H03F2200/294 ,  H03F2200/372 ,  H03F2200/471 ,  H03F2200/99

摘要： A high frequency power amplifier maintains an excellent linearity regardless of a fluctuation of a load impedance and is downsized. The high frequency power amplifier detects an AC voltage amplitude at an output terminal of a final amplification stage transistor, and suppresses an input signal amplitude of a power amplifier when the voltage amplitude exceeds a predetermined threshold value.

摘要翻译： 无论负载阻抗的波动如何，高频功率放大器保持良好的线性度，并且小型化。 高频功率放大器检测最终放大级晶体管的输出端的AC电压振幅，并且当电压幅度超过预定阈值时，抑制功率放大器的输入信号幅度。