Method for fabricating semiconductor device and semiconductor substrate
    51.
    发明申请
    Method for fabricating semiconductor device and semiconductor substrate 失效
    制造半导体器件和半导体衬底的方法

    公开(公告)号:US20050026461A1

    公开(公告)日:2005-02-03

    申请号:US10822722

    申请日:2004-04-13

    申请人: Kenji Yoneda

    发明人: Kenji Yoneda

    摘要: A first thermal treatment, which is performed at a temperature within 650-750° C. for 30-240 minutes, and thereafter a second thermal treatment, which is performed at a temperature within 900-1100° C. for 30-120 minutes, are performed as the initial thermal treatments on a semiconductor wafer composed of silicon. Further, before forming a gate insulating film, the temperature is increased to 1000° C. at a temperature increasing rate of 8° C./min in a nitrogen ambient, and a thermal treatment is performed at a temperature of 1000° C. for 30 minutes as a third thermal treatment.

    摘要翻译: 第一热处理在650-750℃的温度下进行30-240分钟,然后在900-1100℃的温度下进行30-120分钟的第二次热处理, 作为由硅构成的半导体晶片上的初始热处理进行。 此外,在形成栅极绝缘膜之前,在氮气氛中以8℃/分钟的升温速度将温度升高至1000℃,在1000℃的温度下进行热处理, 30分钟作为第三次热处理。

    Surface inspecting illumination device and surface inspecting apparatus
    52.
    发明授权
    Surface inspecting illumination device and surface inspecting apparatus 有权
    表面检查照明装置和表面检查装置

    公开(公告)号:US06837595B2

    公开(公告)日:2005-01-04

    申请号:US10110275

    申请日:2001-08-02

    申请人: Kenji Yoneda

    发明人: Kenji Yoneda

    CPC分类号: G01N21/956 G01N21/8806

    摘要: In order to improve the lighting efficiency without incurring the upsizing of the system, a rise in price or the like, a lighting system for surface inspection to be suitably used in pattern inspection or the like of printed boards is provided wherein: a pair of light-emitting members are provided for lighting a given surface region of a subject for inspection obliquely from an upper forward side and an upper rearward side; and a second light-emitting member capable of lighting from just above through a half mirror is added to the pair of light-emitting members to enhance the lighting luminous intensity, each of the pair of light-emitting members including a plurality of LEDs arranged lengthwise and crosswise, and cylindrical lenses disposed correspondingly to respective columns of the LEDs.

    摘要翻译: 为了提高照明效率而不引起系统的大型化,价格上涨等,提供了适合在印刷电路板的图案检查等中适当使用的用于表面检查的照明系统,其中:一对光 提供用于照明被检体的给定表面区域以从上侧前侧和上侧向后方倾斜检查的配合构件; 并且能够通过半反射镜从上方照明的第二发光部件被添加到一对发光部件中,以增强照明发光强度,所述一对发光部件中的每一个包括纵向排列的多个LED 和相对于LED的各个列设置的交叉和柱面透镜。

    Unit for inspecting a surface
    53.
    发明授权
    Unit for inspecting a surface 失效
    检查表面的单位

    公开(公告)号:US06538729B2

    公开(公告)日:2003-03-25

    申请号:US09742356

    申请日:2000-12-22

    申请人: Kenji Yoneda

    发明人: Kenji Yoneda

    IPC分类号: G01N2100

    CPC分类号: G01N21/55 G01N21/8806

    摘要: The unit for inspecting a surface is to detect a flaw on a specular surface of an object to be inspected with accuracy. The unit is so arranged that light 1a is irradiated from a point light source or close to a point light source 4, the light 1a is refracted by a Fresnel lens 5 so as to converge in a condition of being close to parallel, the refracted light 1a is reflected by a half mirror 6, the light 1a is irradiated on generally whole area of the specular surface 2 to be inspected and the reflected light 1a is introduced into an image capturing means 10 provided at a position where the light 1a converges.

    摘要翻译: 用于检查表面的单元是准确地检测被检查物体的镜面上的缺陷。 该单元被布置为使得光1a从点光源或靠近点光源4照射,光1a被菲涅尔透镜5折射以在接近平行的状态下会聚,折射光 1a被半反射镜6反射,光1a被照射在要检查的镜面2的大致整个区域上,并且反射光1a被引入到设置在光1a会聚的位置的图像捕获装置10中。

    Inspection illuminator
    54.
    发明授权

    公开(公告)号:US06533429B2

    公开(公告)日:2003-03-18

    申请号:US10041608

    申请日:2002-01-10

    申请人: Kenji Yoneda

    发明人: Kenji Yoneda

    IPC分类号: F21V800

    摘要: The present invention provides an inspection illuminator capable of reliably detecting defects on the inspection face of articles to be inspected, while making the brightness of light uniform. In this inspection illuminator, a plurality of illuminant rows are provided, in each of which a multiplicity of illuminants 4 are circularly aligned so as to encircle an opening 1K formed approximately in the center; a plurality of annular transparent bodies 6 for dispersing light from the illuminants of the illuminant rows and guiding such light toward the central axis side of the opening 1K are layered in front of such illuminant rows in a state of being optically shielded with shielding means 7; and the light emitting faces 6A of the transparent bodies 6 are formed into an incline plane such that the upper part thereof is closer to the central axis.

    Semiconductor and a method for manufacturing an oxide film on the surface of a semiconductor substrate
    55.
    发明授权
    Semiconductor and a method for manufacturing an oxide film on the surface of a semiconductor substrate 有权
    半导体和在半导体衬底的表面上制造氧化膜的方法

    公开(公告)号:US06221788B1

    公开(公告)日:2001-04-24

    申请号:US09213626

    申请日:1998-12-18

    IPC分类号: H01L2144

    摘要: The semiconductor of the present invention comprises at least an oxide film and a metal thin film on the surface of the semiconductor. The metal thin film includes a metal serving as an oxidation catalyst and has a thickness in the range of 0.5-30 nm. The oxide film comprises a metal serving as an oxidation catalyst and having a thickness in the range of 1-20 nm. Thus, a high-quality oxide film can be formed on the surface of the semiconductor substrate with high controllability without conducting a high temperature heat treatment. The invention employs the method of manufacturing the semiconductor has a steps of forming the first oxidation film having thickness in the range of 0.1-2.5 nm on the semiconductor substrate; forming the metal thin film (for example platinum film) serving as an oxide catalyst to the thickness in the range of 0.5-30 nm on the first oxide thin film; and then forming the second oxide film by heat treating in an oxidizing atmosphere at temperatures from 25 to 600° C.

    摘要翻译: 本发明的半导体在半导体的表面上至少包含氧化膜和金属薄膜。 金属薄膜包括作为氧化催化剂的金属,其厚度在0.5-30nm的范围内。 氧化物膜包含作为氧化催化剂的金属,其厚度在1-20nm的范围内。 因此,可以在不进行高温热处理的情况下,在高可控性的状态下,在半导体基板的表面上形成高品质的氧化膜。 本发明采用半导体制造方法,在半导体基板上形成厚度为0.1〜2.5nm的第一氧化膜的工序; 在第一氧化物薄膜上形成厚度为0.5-30nm的用作氧化物催化剂的金属薄膜(例如铂膜); 然后在25〜600℃的温度下在氧化性气氛中进行热处理而形成第二氧化膜。

    Method and apparatus for manufacturing semiconductor devices
    57.
    发明授权
    Method and apparatus for manufacturing semiconductor devices 失效
    用于制造半导体器件的方法和装置

    公开(公告)号:US06022813A

    公开(公告)日:2000-02-08

    申请号:US916376

    申请日:1997-08-22

    CPC分类号: H01L21/02052

    摘要: There are disclosed a method and apparatus for manufacturing semiconductor devices. The surface of each semiconductor substrate is exposed to cyanide ions (CN.sup.-) in order to reduce the density of interface states at the insulating film/semiconductor interface. For this purpose, the semiconductor substrate is immersed into a cyan compound solution or is exposed to a cyan compound gas, so that cyanide ions (CN.sup.-) are bonded to dangling bonds at the surface of the semiconductor substrates. As a result, the interface states at the insulating film/semiconductor interface can be reduced.

    摘要翻译: 公开了用于制造半导体器件的方法和装置。 每个半导体衬底的表面暴露于氰离子(CN-),以便降低绝缘膜/半导体界面处的界面态的密度。 为此,将半导体衬底浸入青色化合物溶液中或暴露于青色化合物气体中,使得氰化物离子(CN-)与半导体衬底的表面处的悬挂键结合。 结果,可以减少绝缘膜/半导体界面处的界面状态。

    Signal transmission method and system in elevator equipment
    59.
    发明授权
    Signal transmission method and system in elevator equipment 失效
    电梯设备信号传输方法及系统

    公开(公告)号:US4872532A

    公开(公告)日:1989-10-10

    申请号:US228229

    申请日:1988-08-04

    IPC分类号: B66B1/34

    CPC分类号: B66B1/3415 B66B1/34

    摘要: In elevator equipment in which an elevator controller is connected by a common transmission line to an elevator cage and a plurality of apparatus installed at elevator stops on respective floors, signals are transmitted from the elevator controller to the elevator cage and the plurality of apparatus of elevator stops on respective floors. Information transmitted between the elevator controller and the cage as well as each apparatus at elevator stop on each floor is sorted into information which is different for each apparatus on each floor and the cage (unique information) and information which is the same for the plurality of apparatus at elevator stops on respective floors and the cage (common information), and the unique information is transmitted during a first period and the common information is transmitted during a second period, thereby reducing time required for transmission of information during one cycle.

    摘要翻译: 在电梯控制器通过公共传输线连接到电梯轿厢的电梯设备和安装在各楼层的电梯停车处的多台设备的信号从电梯控制器传送到电梯轿厢和多个电梯设备 停在相应的楼层。 在电梯控制器和轿厢之间传送的信息以及在每层楼层的电梯停止处的每个装置被分类为对于每个楼层上的每个装置和轿厢(唯一信息)不同的信息和对于多个 在各楼层和轿厢(公共信息)上的电梯停止装置,并且在第一时段期间发送唯一信息,并且在第二周期期间发送公共信息,从而减少在一个周期期间发送信息所需的时间。

    Fuel injection nozzle
    60.
    发明授权
    Fuel injection nozzle 失效
    燃油喷嘴

    公开(公告)号:US4540126A

    公开(公告)日:1985-09-10

    申请号:US519265

    申请日:1983-08-01

    IPC分类号: F02M61/18 F02M61/06

    CPC分类号: F02M61/1806 F02M61/18

    摘要: A fuel injection nozzle is provided with such an annular fuel passage that its fuel passage section is, at the earlier stage of fuel injection, maintained smaller than the whole sum of the sectional areas of injection orifices and adapted to increase gradually in response to the lift of a nozzle needle so that the rate of fuel injection increases gradually.

    摘要翻译: 燃料喷射喷嘴设置有这样的环形燃料通道,其燃料通道部分在燃料喷射的较早阶段保持小于喷射孔的截面积的总和,并且适于响应于升力而逐渐增加 的喷嘴针,使得燃料喷射速率逐渐增加。