公开(公告)号：US20060105106A1

公开(公告)日：2006-05-18

申请号：US11055936

申请日：2005-02-11

申请人： Mihaela Balseanu ,  Kee Jung ,  Lihua Huang ,  Li-Qun Xia ,  Rongping Wang ,  Derek Witty ,  Lewis Stern ,  Martin Seamons ,  Hichem M'Saad ,  Michael Kwan

发明人： Mihaela Balseanu ,  Kee Jung ,  Lihua Huang ,  Li-Qun Xia ,  Rongping Wang ,  Derek Witty ,  Lewis Stern ,  Martin Seamons ,  Hichem M'Saad ,  Michael Kwan

IPC分类号： C23C16/00 ,  B05D3/00 ,  H05H1/24

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32082 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/3185 ,  H01L2924/0002 ,  H01L2924/00

摘要： A stressed film is formed on a substrate. The substrate is placed in a process zone and a plasma is formed of a process gas provided in the process zone, the process gas having silicon-containing gas and nitrogen-containing gas. A diluent gas such as nitrogen can also be added. The as-deposited stressed material can be exposed to ultraviolet radiation or electron beams to increase the stress value of the deposited material. In addition or in the alternative, a nitrogen plasma treatment can be used to increase the stress value of the material during deposition. Pulsed plasma methods to deposit stressed materials are also described.

摘要翻译： 在基板上形成应力膜。 将基板放置在处理区中，并且等离子体由设置在处理区中的工艺气体形成，工艺气体具有含硅气体和含氮气体。 还可以加入稀释气体如氮气。 沉积的应力材料可以暴露于紫外线辐射或电子束以增加沉积材料的应力值。 另外或替代地，可以使用氮等离子体处理来增加沉积期间材料的应力值。 还描述了用于沉积应力材料的脉冲等离子体方法。

公开(公告)号：US08753989B2

公开(公告)日：2014-06-17

申请号：US13365229

申请日：2012-02-02

申请人： Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： C23C16/345 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823807 ,  H01L21/823835

摘要： High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation.

摘要翻译： 沉积层（例如氮化硅层）中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。 在一个实施例中，可以通过在致孔剂的存在下沉积氮化硅膜来形成具有高拉伸应力的氮化硅膜。 沉积的氮化硅膜可以暴露于选自等离子体或紫外线辐射的至少一种处理以释放致孔剂。 可以使氮化硅膜致密化，使致孔剂释放产生的孔尺寸减小，并且氮化硅膜中的Si-N键变形以在氮化硅膜中产生拉伸应力。 在另一个实施例中，可以通过在低于约400℃的温度下在含氮等离子体的存在下沉积氮化硅膜来增强氮化硅膜中的拉伸应力，并将沉积的氮化硅膜暴露于紫外线 辐射。

公开(公告)号：US07871926B2

公开(公告)日：2011-01-18

申请号：US11876649

申请日：2007-10-22

申请人： Li-Qun Xia ,  Mihaela Balseanu ,  Victor Nguyen ,  Derek R. Witty ,  Hichem M'Saad ,  Haichun Yang ,  Xinliang Lu ,  Chien-Teh Kao ,  Mei Chang

发明人： Li-Qun Xia ,  Mihaela Balseanu ,  Victor Nguyen ,  Derek R. Witty ,  Hichem M'Saad ,  Haichun Yang ,  Xinliang Lu ,  Chien-Teh Kao ,  Mei Chang

IPC分类号： H01L21/4763 ,  H01L21/31

CPC分类号： H01L21/3185 ,  H01L21/31116 ,  H01L21/3143 ,  H01L21/76829 ,  H01L21/76832 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer.

摘要翻译： 一种用于形成结构的方法包括在衬底的表面上形成至少一个特征。 在至少一个特征上形成含氮介电层。 在至少一个特征的至少一个侧壁上的含氮层的第一部分以第一速率除去，并且含氮层的第二部分在邻近至少一个特征的底部区域的衬底上 以第二速率被去除。 第一个比率大于第二个比率。 在含氮介电层上形成介电层。

公开(公告)号：US07802538B2

公开(公告)日：2010-09-28

申请号：US11608333

申请日：2006-12-08

申请人： Deenesh Padhi ,  Sohyun Park ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Sohyun Park ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： C23C16/00 ,  C23C16/30 ,  C23C16/455 ,  C23C16/52

CPC分类号： H01L21/31633 ,  C23C16/029 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76841

摘要： A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.

摘要翻译： 一种在下层上形成渐变电介质层的方法，包括使含硅碳的气体，含氧气体和载体气体的混合物流过包括阻挡板和面板的喷头，以形成氧化物富集部分 其中含硅碳的气体具有初始流速，使含硅碳的气体以第一中间流速流动约0.5秒或更长，其中第一中间流速高于初始流速 并且使含硅碳的气体以比第一中间流速高的最快流速流动，以形成渐变电介质层的富碳部分。

公开(公告)号：US07780865B2

公开(公告)日：2010-08-24

申请号：US11693005

申请日：2007-03-29

申请人： Mihaela Balseanu ,  Li-Qun Xia ,  Mei-Yee Shek ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Li-Qun Xia ,  Mei-Yee Shek ,  Hichem M'Saad

IPC分类号： C03C15/00

CPC分类号： H01L21/76834 ,  H01L21/02123 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/3185

摘要： Methods of controlling the step coverage and pattern loading of a layer on a substrate are provided. The dielectric layer may be a silicon nitride, silicon oxide, or silicon oxynitride layer. The method comprises depositing a dielectric layer on a substrate having at least one formed feature across a surface of the substrate and etching the dielectric layer with a plasma from oxygen or a halogen-containing gas to provide a desired profile of the dielectric layer on the at least one formed feature. The deposition of the dielectric layer and the etching of the dielectric layer may be repeated for multiple cycles to provide the desired profile of the dielectric layer.

摘要翻译： 提供了控制衬底上的层的阶梯覆盖和图案加载的方法。 电介质层可以是氮化硅，氧化硅或氮氧化硅层。 该方法包括在衬底上沉积介电层，该衬底具有穿过衬底的表面的至少一个形成的特征，并用等离子体从氧气或含卤素气体蚀刻介电层，以在该位置上提供介电层的理想轮廓 至少一个形成的特征。 介电层的沉积和电介质层的蚀刻可以重复多个周期以提供所需的电介质层的轮廓。

公开(公告)号：US20080099920A1

公开(公告)日：2008-05-01

申请号：US11876668

申请日：2007-10-22

申请人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

IPC分类号： H01L23/538 ,  B32B3/00

CPC分类号： H01L21/76825 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/249978

摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

摘要翻译： 根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。 在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。 根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在 形式的电子束。

公开(公告)号：US20070232071A1

公开(公告)日：2007-10-04

申请号：US11693005

申请日：2007-03-29

申请人： Mihaela Balseanu ,  Li-Qun Xia ,  Mei-Yee Shek ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Li-Qun Xia ,  Mei-Yee Shek ,  Hichem M'Saad

IPC分类号： H01L21/465

CPC分类号： H01L21/76834 ,  H01L21/02123 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/3185

摘要： Methods of controlling the step coverage and pattern loading of a layer on a substrate are provided. The dielectric layer may be a silicon nitride, silicon oxide, or silicon oxynitride layer. The method comprises depositing a dielectric layer on a substrate having at least one formed feature across a surface of the substrate and etching the dielectric layer with a plasma from oxygen or a halogen-containing gas to provide a desired profile of the dielectric layer on the at least one formed feature. The deposition of the dielectric layer and the etching of the dielectric layer may be repeated for multiple cycles to provide the desired profile of the dielectric layer.

摘要翻译： 提供了控制衬底上的层的阶梯覆盖和图案加载的方法。 电介质层可以是氮化硅，氧化硅或氮氧化硅层。 该方法包括在衬底上沉积介电层，该衬底具有穿过衬底的表面的至少一个形成的特征，并用等离子体从氧气或含卤素气体蚀刻介电层，以在该位置上提供介电层的理想轮廓 至少一个形成的特征。 介电层的沉积和电介质层的蚀刻可以重复多个周期以提供所需的电介质层的轮廓。

公开(公告)号：US07166544B2

公开(公告)日：2007-01-23

申请号：US10931609

申请日：2004-09-01

申请人： Deenesh Padhi ,  Sohyun Park ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

发明人： Deenesh Padhi ,  Sohyun Park ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： H01L21/31633 ,  C23C16/029 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76841

摘要： A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.

摘要翻译： 一种在下层上形成渐变电介质层的方法，包括使含硅碳的气体，含氧气体和载体气体的混合物流过包括阻挡板和面板的喷头，以形成氧化物富集部分 其中含硅碳的气体具有初始流速，使含硅碳的气体以第一中间流速流动约0.5秒或更长，其中第一中间流速高于初始流速 并且使含硅碳的气体以比第一中间流速高的最快流速流动，以形成渐变电介质层的富碳部分。

公开(公告)号：US20060269692A1

公开(公告)日：2006-11-30

申请号：US11398146

申请日：2006-04-05

申请人： Mihaela Balseanu ,  Li-Qun Xia ,  Vladimir Zubkov ,  Mei-Yee Shek ,  Isabelita Roflox ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Li-Qun Xia ,  Vladimir Zubkov ,  Mei-Yee Shek ,  Isabelita Roflox ,  Hichem M'Saad

IPC分类号： H05H1/24 ,  B05D3/00

CPC分类号： C23C16/345 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/56 ,  H01L21/3185

摘要： Compressive stress in a film of a semiconductor device may be controlled utilizing one or more techniques, employed alone or in combination. A first set of embodiments increase silicon nitride compressive stress by adding hydrogen to the deposition chemistry, and reduce defects in a device fabricated with a high compressive stress silicon nitride film formed in the presence of hydrogen gas. A silicon nitride film may comprise an initiation layer formed in the absence of a hydrogen gas flow, underlying a high stress nitride layer formed in the presence of a hydrogen gas flow. A silicon nitride film formed in accordance with an embodiment of the present invention may exhibit a compressive stress of 2.8 GPa or higher.

摘要翻译： 半导体器件的膜中的压缩应力可以利用单独使用或组合使用的一种或多种技术来控制。 第一组实施例通过向沉积化学品加入氢而增加氮化硅压缩应力，并且减少在氢气存在下形成的高压缩应力氮化硅膜制造的器件中的缺陷。 氮化硅膜可以包括在不存在氢气流的情况下形成的起始层，位于在氢气流的存在下形成的高应力氮化物层的下面。 根据本发明的实施方案形成的氮化硅膜可以表现出2.8GPa或更高的压缩应力。

公开(公告)号：US20050230834A1

公开(公告)日：2005-10-20

申请号：US11085416

申请日：2005-03-21

申请人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

IPC分类号： C23C16/40 ,  C23C16/50 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/316 ,  H01L21/469 ,  H01L21/768 ,  H01L23/52

CPC分类号： H01L21/76825 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/249978

摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

摘要翻译： 根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。 在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。 根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在 形式的电子束。