公开(公告)号：US20080099920A1

公开(公告)日：2008-05-01

申请号：US11876668

申请日：2007-10-22

申请人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

IPC分类号： H01L23/538 ,  B32B3/00

CPC分类号： H01L21/76825 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/249978

摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

摘要翻译： 根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。 在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。 根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在 形式的电子束。

公开(公告)号：US20050230834A1

公开(公告)日：2005-10-20

申请号：US11085416

申请日：2005-03-21

申请人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

IPC分类号： C23C16/40 ,  C23C16/50 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/316 ,  H01L21/469 ,  H01L21/768 ,  H01L23/52

CPC分类号： H01L21/76825 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/249978

摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

摘要翻译： 根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。 在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。 根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在 形式的电子束。

公开(公告)号：US07611996B2

公开(公告)日：2009-11-03

申请号：US11085416

申请日：2005-03-21

申请人： Francimar Schmitt ,  Yi Zheng ,  Kang Sub Yim ,  Sang H. Ahn ,  Lester A. D'Cruz ,  Dustin W. Ho ,  Alexandros T. Demos ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Yi Zheng ,  Kang Sub Yim ,  Sang H. Ahn ,  Lester A. D'Cruz ,  Dustin W. Ho ,  Alexandros T. Demos ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/76825 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/249978

摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

摘要翻译： 根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。 在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。 根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在 形式的电子束。

公开(公告)号：US20050153073A1

公开(公告)日：2005-07-14

申请号：US11076181

申请日：2005-03-09

申请人： Yi Zheng ,  Srinivas Nemani ,  Li-Qun Xia ,  Eric Hollar ,  Kang Yim

发明人： Yi Zheng ,  Srinivas Nemani ,  Li-Qun Xia ,  Eric Hollar ,  Kang Yim

IPC分类号： B05D3/06 ,  B05D7/24 ,  C23C16/40 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/312 ,  C23C16/00 ,  H01L29/76

CPC分类号： C23C16/401 ,  B05D1/60 ,  B05D3/068 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/7681

摘要： The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2.5 and a hardness greater than 0.5 GPa.

摘要翻译： 本发明通常提供使用电子束处理沉积低介电常数膜的方法。 在一个方面，该方法包括在足以沉积包含至少一个环状基团的非固化膜的沉积条件下将包含一种或多种有机硅化合物和一种或多种具有至少一个环状基团的烃化合物的气体混合物递送到基底表面 组在基板表面上。 该方法还包括在足以提供小于2.5的介电常数和大于0.5GPa的硬度的固化条件下使用电子束从非固化膜中基本上除去至少一个环状基团。

公开(公告)号：US07151053B2

公开(公告)日：2006-12-19

申请号：US11118678

申请日：2005-04-28

申请人： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

发明人： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

IPC分类号： H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76834 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

摘要： Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

摘要翻译： 提供了用于沉积氧掺杂介电层的方法。 氧掺杂介电层可用于阻挡层或硬掩模。 在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理 并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。 氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。

公开(公告)号：US07060330B2

公开(公告)日：2006-06-13

申请号：US10302393

申请日：2002-11-22

申请人： Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric Hollar ,  Kang Sub Yim

发明人： Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric Hollar ,  Kang Sub Yim

IPC分类号： C23C16/56

CPC分类号： C23C16/401 ,  B05D1/60 ,  B05D3/068 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/7681

摘要： The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2.5 and a hardness greater than 0.5 GPa.

摘要翻译： 本发明通常提供使用电子束处理沉积低介电常数膜的方法。 在一个方面，该方法包括在足以沉积包含至少一个环状基团的非固化膜的沉积条件下将包含一种或多种有机硅化合物和一种或多种具有至少一个环状基团的烃化合物的气体混合物递送到基底表面 组在基板表面上。 该方法还包括在足以提供小于2.5的介电常数和大于0.5GPa的硬度的固化条件下使用电子束从非固化膜中基本上除去至少一个环状基团。

公开(公告)号：US07056560B2

公开(公告)日：2006-06-06

申请号：US10773060

申请日：2004-02-04

申请人： Kang Sub Yim ,  Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric P. Hollar

发明人： Kang Sub Yim ,  Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric P. Hollar

IPC分类号： C23C16/56 ,  C23C16/48 ,  C23C16/42 ,  C23C16/40 ,  H01L21/473

CPC分类号： C23C16/401 ,  B05D1/60 ,  B05D3/068 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/3148 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76825

摘要： A method for depositing a low dielectric constant film is provided by reacting a gas mixture including one or more linear, oxygen-free organosilicon compounds, one or more oxygen-free hydrocarbon compounds comprising one ring and one or two carbon-carbon double bonds in the ring, and one or more oxidizing gases. Optionally, the low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment.

摘要翻译： 一种沉积低介电常数膜的方法是通过使含有一种或多种线性无氧有机硅化合物的气体混合物，一种或多种包含一个环和一个或两个碳 - 碳双键的无氧烃化合物反应在 环和一种或多种氧化性气体。 任选地，低介电常数膜在沉积后进行后处理。 一方面，后处理是电子束处理。

公开(公告)号：US07749563B2

公开(公告)日：2010-07-06

申请号：US10266551

申请日：2002-10-07

申请人： Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia

发明人： Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia

IPC分类号： C23C16/00

CPC分类号： H01L21/02167 ,  C23C16/0272 ,  C23C16/325 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/314 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76832

摘要： A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials. A method is provided for depositing a silicon carbide cap layer that has substantially no phenyl groups attached to silicon atoms from a processing gas comprising an oxygen-free organosilicon compound on a low k silicon carbide barrier layer.

摘要翻译： 提供了一种处理基材的方法，包括提供包含含有苯基的有机硅化合物的处理气体至处理室，并使处理气体反应沉积在大马士革或双镶嵌中可用作阻挡层的低k碳化硅阻挡层 低k电介质材料的应用。 提供了一种用于沉积在低k碳化硅阻挡层上基本上没有从包含无氧有机硅化合物的处理气体连接到硅原子上的苯基沉积碳化硅盖层的方法。

公开(公告)号：US20050233576A1

公开(公告)日：2005-10-20

申请号：US11118678

申请日：2005-04-28

申请人： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas Nemani ,  Kangsub Yim ,  Farhad Moghadam ,  Ashok Sinha ,  Yi Zheng

发明人： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas Nemani ,  Kangsub Yim ,  Farhad Moghadam ,  Ashok Sinha ,  Yi Zheng

IPC分类号： C23C16/42 ,  C23C16/30 ,  C23C16/40 ,  C23C16/56 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/314

CPC分类号： H01L21/76834 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

摘要： Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

公开(公告)号：US06890850B2

公开(公告)日：2005-05-10

申请号：US10196498

申请日：2002-07-15

申请人： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

发明人： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

IPC分类号： C23C16/42 ,  C23C16/30 ,  C23C16/40 ,  C23C16/56 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76834 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

摘要： Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

摘要翻译： 提供了用于沉积氧掺杂介电层的方法。 氧掺杂介电层可用于阻挡层或硬掩模。 在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理 并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。 氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。