Abstract:
The present invention relates to a complex of agomelatine and to preparation thereof. The hydrogen halide complex of agomelatine obtained through the present method is more soluble, more stable, and of higher purity than agomelatine itself, making it more suitable to be used in pharmaceutical preparation. Using this method, product of high purity can be obtained through a simple process, without having to incur further complicated steps.
Abstract:
In accordance with an embodiment, a method of matching video content to advertising content includes electronically receiving a video content metadata from a content provider, and matching the video content metadata to advertising content metadata of a global list of advertisements. The video content metadata corresponds to video content being sent to a user device and includes at least one keyword. Furthermore, the advertising content metadata corresponds to advertising content and includes at least one keyword. Matching the video content metadata to advertising content metadata includes comparing the at least one keyword of the video content metadata to the at least one keyword of the advertising content metadata.
Abstract:
System and methods for media distribution are described. In one embodiment, a method of media distribution includes rendering of a media to a user, stopping the rendering of the media, and storing remaining media not rendered to the user in a user server. The method further includes receiving a request to stream the remaining media to the user, dividing the remaining media into segments, and assigning a priority to each segment. The remaining media is streamed, leaving out segments with priority lower than a threshold priority.
Abstract:
A method for fabricating a copper-indium-gallium-diselenide (CIGS) compound thin film is provided. In this method, a substrate is first provided. An adhesive layer is formed over the substrate. A metal electrode layer is formed over the adhesive layer. A precursor stacked layer is formed over the metal electrode layer, wherein the precursor stacked layer includes a plurality of copper-gallium (CuGa) alloy layers and at least one copper-indium (CuIn) alloy layer sandwiched between the plurality of CuGa alloy layers. An annealing process is performed to convert the precursor stacked layer into a copper-indium-gallium (CuInGa) alloy layer. A selenization process is performed to convert the CuInGa alloy layer into a copper-indium-gallium-diselenide (CuInGaSe) compound thin film.
Abstract:
The invention provides the use of ursolic acid saponin and oleanolic acid saponin of formula (I) in preparing medicaments for increasing leucocytes and/or platelets. The invention also provides a pharmaceutical composition containing the same compound. The invention utilizes the cheap and accessible ursolic acid and oleanolic acid which are widely present in natural plants as raw materials, introduces monosaccharyls or oligosaccharyls by structural modification. It is proved by pharmacological tests that the compound of formula (I) have an activity of obviously increasing leucocytes and/or platelets.
Abstract:
An image processing method can be performed on a video image that includes an initial frame and a plurality of subsequent frames. An object is located within the initial frame of the video image and a histogram related to the object is generated. A foreground map that includes the object is also generated. For each subsequent frame, a mean shift iteration is performed to adjust the location of the object within the current frame. The histogram related to the object and the foreground map can then be updated.
Abstract:
Methods, apparatus, and systems for performing fault diagnosis are disclosed herein. In one exemplary embodiment, a failure log is received including entries indicative of compressed test responses to chain patterns and compressed test responses to scan patterns. A faulty scan chain in the circuit-under-test is identified based at least in part on one or more of the entries indicative of the compressed test responses to chain patterns. One or more faulty scan cell candidates in the faulty scan chain are identified based at least in part on one or more of the entries indicative of the compressed test responses to scan patterns. The one or more identified scan cell candidates can be reported. Computer-readable media comprising computer-executable instructions for causing a computer to perform any of the disclosed methods are also provided. Likewise, computer-readable media storing lists of fault candidates identified by any of the disclosed methods are also provided.
Abstract:
Fabrication methods for nano-scale chalcopyritic powders and polymeric thin-film solar cells are presented. The fabrication method for nano-scale chalcopyritic powders includes providing a solution consisting of group IB, IIIA, VIA elements on the chemistry periodic table or combinations thereof. The solution is heated by a microwave generator. The solution is washed and filtered by a washing agent. The solution is subsequently dried, thereby acquiring nano-scale chalcopyritic powders.
Abstract:
A Universal Serial Bus data transport method and its device is disclosed. Data transport is performed through a high-speed transport technique based on a Universal Serial Bus, which consists of Universal Serial Bus protocol for communication between the device and the host, and SCSI protocol for interaction between the device and the upper driver layer. A data transport device using the Universal Serial Bus thus uses the embedded driver inside the operating system, which may be self-loaded/self-initialized, and have high data transport speed, and convenient to use.
Abstract:
A bulk-doped semiconductor may be at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may have a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof.