摘要:
This invention is such that, in a series-connected TC parallel-unit type ferroelectric RAM composed of a series connection of a plurality of unit cells, each unit cell being such that a ferroelectric capacitor is connected between the source and drain of a cell transistor, for instance, plate electrode wires are provided in the longitudinal direction of bit line pairs. The plate electrode wires are shared in memory block groups, each group being a set of a plurality of memory cell blocks connected to the same bit line pair. This causes only the memory cells read from or written into to be accessed by the selected word line and selected plate electrode wire in one select operation.
摘要:
An integrated circuit has configurable logic blocks that are reconfigurable, hard-wired logic blocks that carry out fixed operations, and a memory. The memory stores configuration data for configuring the configurable logic blocks, block-connection data for determining connections between the configurable and hard-wired logic blocks, and partial-circuit-connection data for determining connections between partial circuits each of which consists of logic blocks selected among the configurable and hard-wired logic blocks. These pieces of data are shared by the logic blocks to reduce the number of memories in the integrated circuit and improve the packaging density of the integrated circuit.
摘要:
The present invention relates to, more specifically, an electronic circuit apparatus having a main system portion and a subsystem portion connected to the main system portion. In the electronic circuit apparatus, at least either the main system or the subsystem comprises a clock source, a clock wire having an outgoing path and an incoming path, wherein a clock signal from the clock source is inputted from one end of the outgoing path, and at least one receiver connected to an optional position of the outgoing path, further connected to a position of the outgoing path adjacent to the optional position, for supplying a clock signal having an optional delay level relative to the clock signal from the clock source according to a delay level between each clock signal at the positions.
摘要:
A reconfigurable circuit is reconstructed to three or more operating circuit blocks. Upon testing, the same data is inputted to each of the reconstructed operating circuit blocks. A majority circuit formed in the reconfigurable circuit compares results of operations of the operating circuit blocks and outputs information indicating which of the operating circuit blocks is in trouble.
摘要:
A stable high-speed integrated circuit driven by a wide range of low voltages and consuming low power. A MOSFET is used wherein signals are applied to its gate and body for forming a circuit block which comprises a transistor network and at least one buffer circuit. Each buffer circuit has at least two configurations. A plurality of circuit blocks are formed on the same IC chip. Any of the configurations of the buffer circuit may be selected according to the magnitude of the capacitance of the load driven by the circuit block.
摘要:
A reconfigurable circuit wherein part or all of an instruction or a result of decoding thereof and output of said register file are inputted and a circuit structure thereof can be changed by an external signal is provided. If a bug occurs when part or all of the instruction or the result of decoding thereof and the output of the register file satisfy a particular condition, the reconfigurable circuit is reconstructed by an external signal so as to output a first signal under that particular condition. An interrupt control circuit controls a processing unit so as to carry out processing based on the first signal or processing to avoid the bug when the first signal is inputted.
摘要:
A semiconductor device includes a semiconductor layer used as a substrate formed on an insulating film, a plurality of MOS transistors arranged on the semiconductor layer and each having a gate, a source, and a drain, a pair of MOS transistors of the plurality of MOS transistors constituting a detection circuit for detecting magnitudes of potentials applied to the gates as a difference between conductances of the pair of transistors, and a diffusion layer region of the same conductivity type as that of the semiconductor layer, arranged on one of portions of the sources and drains of the pair of MOS transistors constituting the detection circuit, for connecting portions serving as the substrates of the pair of MOS transistors to each other.
摘要:
The semiconductor integrated circuit device of the present invention includes a plurality of integrated circuits. The scheduling circuit selects an arbitrary number of integrated circuit from the plurality of integrated circuits, and connects the selected integrated circuits between the power line and the ground line such that the selected integrated circuits are arranged in series or in series-parallel. The scheduling circuit sets a combination of connection of the selected integrated circuits such that the consumption power of the total of the selected integrated circuits becomes minimum. The voltage control circuit sets a potential of a serial connecting portion of the selected integrated circuits. The data control circuit has an input output circuit for inputting and outputting data between the selected integrated circuits, and the outside, and a level conversion circuit for converting a level of data between certain integrated circuits.
摘要:
There is provided a semiconductor memory having a reduced power consumption in data access and a high access speed in a NAND cell array scheme in which a memory cell unit is constituted by cascade-connecting a plurality of memory cells with each other. A memory cell array is divided into a plurality of sub-arrays, and the divided sub-arrays are selectively activated, thereby decreasing the capacitances of the word lines, register word lines, bit lines, and the like which are charged/discharged in data access.
摘要:
A semiconductor device has an LSI chip including a semiconductor substrate, an LSI core section provided at a center portion of the semiconductor substrate and serving as a multilayered wiring layer of the semiconductor substrate, a first rewiring layer provided adjacent to an outer periphery of the LSI core section on the semiconductor substrate and including a plurality of wiring layers, a first pad electrode disposed at an outer periphery of the first rewiring layer, and an insulation layer covering the first pad electrode. The semiconductor device includes a second rewiring layer provided on the LSI chip and including a rewiring connected to the first pad electrode. The semiconductor device includes a plurality of ball electrodes provided on the second rewiring layer. The first rewiring layer is electrically connected to the LSI core section and the first pad electrode.