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74 条记录 (耗时 0.032 秒)

    Solar cell and method for producing the same
    51.
    发明授权
    Solar cell and method for producing the same 失效
    太阳能电池及其制造方法

    公开(公告)号：US5279686A

    公开(公告)日：1994-01-18

    申请号：US837976

    申请日：1992-02-20

    申请人： Shoji Nishida

    发明人： Shoji Nishida

    IPC分类号： H01L21/20 ,  H01L31/18 ,  H01L31/0368

    CPC分类号： H01L31/182 ,  H01L21/02381 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  Y02E10/546 ,  Y02P70/521

    摘要： There is disclosed a polycrystalline silicon solar cell, utilizing a continuous polycrystalline silicon film consisting of single crystals grown from a plurality of small nucleation surfaces provided on a non-nucleation surface. The semiconductor junction, providing the photoelectromotive force of the solar cell, is formed on the single crystals, avoiding the areas of grain boundaries formed by mutual contact of the single crystals, in order to eliminate the drawbacks resulting from such boundaries. The semiconductor junction is formed by masking the areas of the grain boundaries with a suitable masking material, such as photoresist.

    摘要翻译： 公开了一种多晶硅太阳能电池，其利用由设置在非成核表面上的多个小成核面生长的单晶构成的连续多晶硅膜。 提供太阳能电池的光电动势的半导体结形成在单晶上，避免了由单晶相互接触而形成的晶界的区域，以消除由这种边界产生的缺陷。 通过用合适的掩模材料（例如光致抗蚀剂）掩蔽晶界的区域来形成半导体结。

    Crystalline solar cell and method for producing the same
    52.
    发明授权
    Crystalline solar cell and method for producing the same 失效
    结晶太阳能电池及其制造方法

    公开(公告)号：US5269852A

    公开(公告)日：1993-12-14

    申请号：US887821

    申请日：1992-05-26

    申请人： Shoji Nishida

    发明人： Shoji Nishida

    IPC分类号： H01L27/142 ,  H01L31/0368 ,  H01L31/18 ,  H01L31/0392 ,  H01L31/06

    CPC分类号： H01L31/03682 ,  H01L31/0475 ,  H01L31/1804 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    摘要： A crystalline solar cell is formed by growing single crystals on respective plural nucleation areas provided on a non-nucleation surface in such a manner that the neighboring single crystals do not have a crystal grain boundary therebetween. The solar cell comprises an insulation layer having an aperture formed on each of said single crystals. A semiconductor junction is formed at each single crystal at the respective aperture.

    摘要翻译： 通过在设置在非成核面上的相应的多个成核区域上生长单晶以使得相邻的单晶在其之间不具有晶界的方式形成晶体太阳能电池。 太阳能电池包括在每个所述单晶上形成有孔的绝缘层。 在相应孔径的每个单晶处形成半导体结。

    Process for forming functional zinc oxide films using alkyl zinc compound and oxygen-containing gas
    54.
    发明授权
    Process for forming functional zinc oxide films using alkyl zinc compound and oxygen-containing gas 失效
    使用烷基锌化合物和含氧气体形成功能性氧化锌膜的方法

    公开(公告)号：US5002796A

    公开(公告)日：1991-03-26

    申请号：US354716

    申请日：1989-05-22

    申请人： Shoji Nishida

    发明人： Shoji Nishida

    IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/50 ,  C23C16/511 ,  G02F1/1343 ,  H01B1/08 ,  H01L21/205 ,  H01L31/04 ,  H01L31/075 ,  H01L31/18

    CPC分类号： H01L31/1884 ,  C23C16/407 ,  G02F1/13439 ,  H01B1/08 ,  H01L31/075 ,  Y02B10/10 ,  Y02E10/548

    摘要： A functional zinc oxide deposited thin film having high light permeability and low resistivity can be obtained at a low temperature of about 200.degree. C. on an inexpensive substrate such as glass by a method of activating a starting material gas by means of activation energy, in a space different from a film-forming space thereby forming a precursor contributing to the formation of a deposited film, activating a starting material gas in a space different from the film-forming space and the space just-mentioned above by means of activation energy thereby forming an active species that chemically reacts with the precursor, and introducing the precursor and the active species into the film-forming space, thereby depositing a film, wherein the starting material gas for forming the precursor is an alkyl zinc compound and the starting material for forming the active species is an oxygen gas or an ozone gas. This enables mass production of photovoltaic devices at high efficiency using a PN junction or PIN junction or high performance flat display device using liquid crystals, by which practical provision of power sources for domestic equipments or power sources for electric power appliance or large area display device can be obtained at a reduced cost.

    摘要翻译： 通过活化能活化起始原料气体的方法，可以在廉价的基板如玻璃上，在约200℃的低温下获得具有高透光性和低电阻率的功能氧化锌沉积薄膜， 与成膜空间不同的空间，从而形成有助于形成沉积膜的前体，借助于活化能在与成膜空间不同的空间和上述空间中活化原料气体，从而 形成与前体发生化学反应的活性物质，并将前体和活性物质引入成膜空间，从而沉积膜，其中用于形成前体的起始原料气体是烷基锌化合物和用于 形成活性物质是氧气或臭氧气体。 这使得可以使用PN结或PIN结或使用液晶的高性能平面显示装置高效率地批量生产光电器件，通过该实施例，用于家用设备或用于电力设备或大面积显示装置的电源的电源的实际供应可以 以较低的成本获得。

    Polycrystalline silicon photoelectric conversion device and process for its production
    57.
    发明授权
    Polycrystalline silicon photoelectric conversion device and process for its production 失效
    多晶硅光电转换装置及其生产工艺

    公开(公告)号：US5575862A

    公开(公告)日：1996-11-19

    申请号：US352034

    申请日：1994-11-30

    申请人： Shoji Nishida

    发明人： Shoji Nishida

    IPC分类号： H01L31/04 ,  H01L21/20 ,  H01L31/0392 ,  H01L31/072 ,  H01L31/18 ,  H01L31/06 ,  H01L31/0368

    CPC分类号： H01L31/0745 ,  H01L31/03921 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/1824 ,  H01L31/186 ,  Y02E10/545 ,  Y02E10/546 ,  Y02P70/521

    摘要： This invention provides an inexpensive polycrystalline silicon solar cell having a large grain size polycrystalline semiconductor layer grown on a low-cost metallurgical grade (MG) silicon substrate, and a process for its production. The polycrystalline silicon solar cell comprises a MG-silicon substrate, a metal oxide layer formed thereon and a polycrystalline silicon layer formed on the metal oxide layer. The process for producing the polycrystalline silicon solar cell comprises the steps of i) depositing the metal oxide layer on the MG-silicon substrate, ii) depositing a silicon layer on the surface of the metal oxide layer, iii) depositing a cap layer on the surface of the silicon layer and melting the silicon layer by heating from the upper part of the cap layer, followed by solidification to form a polycrystalline silicon layer, and iv) removing the cap layer and forming a semiconductor junction on the surface of the polycrystalline silicon layer.

    摘要翻译： 本发明提供了一种在低成本冶金级（MG）硅衬底上生长的具有大晶粒尺寸多晶半导体层的便宜的多晶硅太阳能电池及其生产方法。 多晶硅太阳能电池包括MG-硅衬底，在其上形成的金属氧化物层和形成在金属氧化物层上的多晶硅层。 制造多晶硅太阳能电池的方法包括以下步骤：i）将金属氧化物层沉积在MG-硅衬底上，ii）在该金属氧化物层的表面上沉积一层硅层，iii） 表面，并且通过从盖层的上部加热熔化硅层，然后固化形成多晶硅层，以及iv）去除覆盖层并在多晶硅的表面上形成半导体结 层。

    Solar cell and production process therefor
    60.
    发明授权
    Solar cell and production process therefor 失效
    太阳能电池及其生产工艺

    公开(公告)号：US5584941A

    公开(公告)日：1996-12-17

    申请号：US406157

    申请日：1995-03-17

    申请人： Shoji Nishida

    发明人： Shoji Nishida

    IPC分类号： H01L31/0392 ,  H01L31/0745 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/06

    CPC分类号： H01L31/0745 ,  H01L31/03921 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521

    摘要： In order to provide a low cost solar cell which has a high quality, little stressed polycrystalline silicon semiconductor layer of large crystal sizes on a low cost metal substrate and to provide a production process therefor, the solar cell has a metal layer, a metal oxide layer, and a polycrystalline silicon semiconductor layer formed in this order on the substrate, and the production process therefor comprises a step of depositing the metal layer on the substrate, a step of depositing the metal oxide layer on the metal layer, a step of depositing the semiconductor layer on the metal oxide layer, a step of depositing a cap layer on the surface of the semiconductor layer and fusing and solidifying the semiconductor layer by radiant heating from above the cap layer to form the polycrystalline semiconductor layer, and a step of removing the cap layer.

    摘要翻译： 为了在低成本的金属基板上提供具有高质量，大晶体尺寸的小应力多晶硅半导体层并提供其制造方法的低成本太阳能电池，太阳能电池具有金属层，金属氧化物 层和在基板上依次形成的多晶硅半导体层，其制造方法包括在基板上沉积金属层的步骤，在金属层上沉积金属氧化物层的步骤，沉积步骤 金属氧化物层上的半导体层，在半导体层的表面上沉积盖层并通过辐射加热从帽层上方熔融并固化半导体层以形成多晶半导体层的步骤，以及去除 盖层。