摘要:
A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.
摘要:
A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C. with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.
摘要:
Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要:
A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
摘要:
Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要:
Compositions and methods employing supercritical fluids, e.g., supercritical carbon dioxide, for removal of unwanted material from microelectronic device structures and process equipment. One composition of such type, having utility for removing flux and solder perform surface films, includes supercritical fluid, e.g., supercritical CO2, and organic co-solvent, e.g., xylene. Another composition of such type having utility for removal of metals, metal oxides, metal-containing post-etch residues and CMP particles from semiconductor substrates includes supercritical fluid and at least one β-diketone.
摘要:
A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
摘要:
Metalorganic precursors of the formula: (R1R2N)a−bMXb wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1≦b≦(a−1); R1 and R2 can be the same as or different from one another, and are each independently selected from the group of H, C1–C4 alkyl, C3–C6 cycloalkyl, and R03Si, where each R0 can be the same or different and each R0 is independently selected from H and C1–C4 alkyl; and X is selected from the group of chlorine, fluorine, bromine and iodine. Precursors of such formula are useful for chemical vapor deposition (MOCVD) of conductive barrier materials in the manufacture of microelectronic device structures, e.g., by atomic layer chemical vapor deposition on a substrate bearing nitrogen-containing surface functionality. Further described is a method of forming Si3N4 on a substrate at low temperature, e.g., using atomic layer chemical vapor deposition (ALCVD).
摘要翻译:式中的金属有机前体:<?in-line-formula description =“In-line Formulas”end =“lead”?>(R 1 R 2 N N) 其中:M是前体金属中心,其选自下列的化合物:其中:M是前体金属中心, Ta,Ti,W,Nb,Si,Al和B组; a是等于M的化合价数; 1 <= b <=(A-1); R 1和R 2可以彼此相同或不同,并且各自独立地选自H,C 1〜 C 1 -C 4烷基,C 3 -C 6环烷基和R 0〜3个 SUB> > Si,其中每个R 0可以相同或不同,并且每个R 0独立地选自H和C 1 -C 3 > 4 u>烷基; X选自氯,氟,溴和碘。 这种配方的前体可用于制造微电子器件结构中的导电阻挡材料的化学气相沉积(MOCVD),例如通过在含有氮的表面官能团的基底上的原子层化学气相沉积。 进一步描述了在低温下,例如使用原子层化学气相沉积(ALCVD)在衬底上形成Si 3 N 4 N 4的方法。
摘要:
A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1–C8 alkyl, C1–C8 perfluoroalkyl, alkylsilyl and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSi(NR1R2)4-x, wherein H is hydrogen; x is from 0 to 3; Si is silicon; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1–C8 alkyl, and C1–C8 perfluoroalkyl. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.