公开(公告)号：US07300854B2

公开(公告)日：2007-11-27

申请号：US10451775

申请日：2001-12-06

Applicant: Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

Inventor： Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

IPC: H01L21/76 ,  H01L21/20 ,  H01L21/00

CPC classification number: B81C1/00492 ,  B81B2201/0235 ,  B81B2203/0315 ,  B81C2201/0115 ,  Y10S438/96

Abstract: A method of producing a semiconductor component, e.g., a multilayer semiconductor component, and a semiconductor component produced by this method, where the semiconductor component has, e.g., a mobile mass, i.e., an oscillator structure.A method easily and inexpensively produce a micromechanical component having monocrystalline oscillator structures, such as an acceleration sensor or a rotational rate sensor for example, by surface micromechanics, a first porous layer is formed in the semiconductor component in a first step and a cavity, i.e., a cavern, is formed beneath or out of the first porous layer in the semiconductor component in a second step.

Abstract translation: 制造半导体元件的方法，例如多层半导体元件，以及通过该方法制造的半导体元件，其中半导体元件具有例如移动质量，即振荡器结构。 一种容易且廉价地制造具有单晶振荡器结构的微机械部件，例如加速度传感器或旋转速率传感器，例如通过表面微机械，在第一步骤和空腔中在半导体部件中形成第一多孔层，即 在第二步骤中，在半导体部件中的第一多孔层的下面或外面形成有洞穴。

公开(公告)号：US07244935B2

公开(公告)日：2007-07-17

申请号：US10551425

申请日：2004-04-16

Applicant: Jean-Jacques Yon ,  Jean-Louis Ouvrier-Buffet ,  Astrid Astier ,  Michel Vilain

Inventor： Jean-Jacques Yon ,  Jean-Louis Ouvrier-Buffet ,  Astrid Astier ,  Michel Vilain

IPC: G01J5/00

CPC classification number: G01J5/02 ,  B81B3/0081 ,  B81B2201/0278 ,  B81C2201/0115 ,  G01J5/0235 ,  G01J5/10 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An absorbent membrane (1) is fixed in suspension onto a front face of a substrate (2), in a direction substantially parallel to the substrate (2), by at least one alveolate structure thermally insulating the membrane from the substrate (2) and arranged in a plane substantially perpendicular to the substrate (2). The detector can comprise arms (3) fixedly secured to the absorbent membrane (1). The alveolate structures can be respectively arranged between one of the arms (3) and the substrate (2). The alveolate structure can be formed by a plurality of superposed thin layers (6) separated by spacers (7) or by superposed rows of arcades formed by thin layers. The alveolate structure can comprise a porous pad.

Abstract translation: 吸收膜（1）通过将膜与基板（2）热绝缘的至少一个肺泡结构以基本上平行于基底（2）的方向悬挂在基底（2）的正面上，以及 布置在基本上垂直于基底（2）的平面中。 检测器可以包括固定在吸收膜（1）上的臂（3）。 蜂窝结构可以分别布置在臂（3）中的一个和基底（2）之间。 蜂窝结构可以由多个由间隔物（7）分隔开的叠置的薄层（6）或由薄层形成的叠层的叠层形成。 泡沫结构可以包括多孔垫。

公开(公告)号：US07195946B2

公开(公告)日：2007-03-27

申请号：US10884867

申请日：2004-07-02

Applicant: Giuseppe D'Arrigo ,  Rosario Corrado Spinella

Inventor： Giuseppe D'Arrigo ,  Rosario Corrado Spinella

IPC: H01L21/00

CPC classification number: B81C1/00142 ,  B81B2201/042 ,  B81C2201/0115

Abstract: A method is provided for fabricating a semiconductor device that includes a suspended micro-system. According to the method, a silicon porous layer is formed above a silicon substrate, and the silicon porous layer is oxidized. An oxide layer is deposited, and a first polysilicon layer is deposited above the oxide layer. The first polysilicon layer, the oxide layer, and the silicon porous layer are selectively removed. A nitride layer is deposited, and a second polysilicon layer is deposited. The second polysilicon layer, the nitride layer, the first polysilicon layer, and the oxide layer are selectively removed. The silicon porous layer is removed in areas made accessible by the previous step. Also provided is a semiconductor device that includes a suspended structure fixed to at least two walls through a plurality of hinges, with the suspended structure including an oxide layer, a first polysilicon layer, a nitride layer, and a second polysilicon layer.

Abstract translation: 提供了一种用于制造包括悬浮微系统的半导体器件的方法。 根据该方法，在硅衬底上形成硅多孔层，并且硅多孔层被氧化。 沉积氧化物层，并且在氧化物层上方沉积第一多晶硅层。 选择性地去除第一多晶硅层，氧化物层和硅多孔层。 沉积氮化物层，沉积第二多晶硅层。 选择性地除去第二多晶硅层，氮化物层，第一多晶硅层和氧化物层。 在通过前一步骤可访问的区域中去除硅多孔层。 还提供了一种半导体器件，其包括通过多个铰链固定到至少两个壁的悬置结构，其中悬浮结构包括氧化物层，第一多晶硅层，氮化物层和第二多晶硅层。

公开(公告)号：US07160750B2

公开(公告)日：2007-01-09

申请号：US10473762

申请日：2002-02-21

Applicant: Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

Inventor： Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

IPC: H01L21/00

CPC classification number: B81C1/00047 ,  B81B2201/0278 ,  B81C2201/0115 ,  B81C2201/0139

Abstract: A method for manufacturing a semiconductor component, such as, for example, a multilayer semiconductor component including a micromechanical component, such as, for example, a heat transfer sensor having a semiconductor substrate of silicon, and a sensor region. For inexpensive manufacture of a thermal insulation between the semiconductor substrate and the sensor region a porous layer is provided in the semiconductor component.

Abstract translation: 一种半导体部件的制造方法，例如包括微机械部件的多层半导体部件，例如具有硅的半导体基板的传热传感器和传感器区域。 为了廉价地制造半导体基板和传感器区域之间的绝热，在半导体部件中设置多孔层。

公开(公告)号：US20060273256A1

公开(公告)日：2006-12-07

申请号：US10551425

申请日：2004-04-16

Applicant: Jean-Jacques Yon ,  Jean-Louis Ouvrier-Buffet ,  Astrid Astier ,  Michel Vilain

Inventor： Jean-Jacques Yon ,  Jean-Louis Ouvrier-Buffet ,  Astrid Astier ,  Michel Vilain

IPC: G01J5/00

CPC classification number: G01J5/02 ,  B81B3/0081 ,  B81B2201/0278 ,  B81C2201/0115 ,  G01J5/0235 ,  G01J5/10 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An absorbent membrane (1) is fixed in suspension onto a front face of a substrate (2), in a direction substantially parallel to the substrate (2), by at least one alveolate structure thermally insulating the membrane from the substrate (2) and arranged in a plane substantially perpendicular to the substrate (2). The detector can comprise arms (3) fixedly secured to the absorbent membrane (1). The alveolate structures can be respectively arranged between one of the arms (3) and the substrate (2). The alveolate structure can be formed by a plurality of superposed thin layers (6) separated by spacers (7) or by superposed rows of arcades formed by thin layers. The alveolate structure can comprise a porous pad.

Abstract translation: 吸收膜（1）通过将膜与基板（2）热绝缘的至少一个肺泡结构以基本上平行于基底（2）的方向悬挂在基底（2）的正面上，以及 布置在基本上垂直于基底（2）的平面中。 检测器可以包括固定在吸收膜（1）上的臂（3）。 蜂窝结构可以分别布置在臂（3）中的一个和基底（2）之间。 蜂窝结构可以由多个由间隔物（7）分隔的叠置的薄层（6）或由薄层形成的叠层的叠层形成。 泡沫结构可以包括多孔垫。

公开(公告)号：US20060236436A1

公开(公告)日：2006-10-19

申请号：US10544801

申请日：2004-02-13

Applicant: Yangyang Li ,  Frederique Cunin ,  Michael Sailor ,  Jamie Link ,  Ting Gao

Inventor： Yangyang Li ,  Frederique Cunin ,  Michael Sailor ,  Jamie Link ,  Ting Gao

IPC: H01L51/40

CPC classification number: B29D11/00346 ,  B29D11/0074 ,  B81B2201/06 ,  B81B2203/0361 ,  B81C99/0085 ,  B81C2201/0115 ,  B81C2201/034 ,  Y10S977/921

Abstract: A method of generating three-dimensional nanostructures that includes providing a silicon substrate, creating a porous silicon template from the silicon substrate, wherein the template is created to have a predetermined configuration, depositing a predetermined material on the porous silicon template, and removing the porous silicon template from the deposited material to leave a freestanding nanostructure.

Abstract translation: 一种产生三维纳米结构的方法，其包括提供硅衬底，从所述硅衬底产生多孔硅模板，其中所述模板被创建为具有预定构型，在所述多孔硅模板上沉积预定材料，以及除去所述多孔硅模板 硅模板从沉积的材料离开独立的纳米结构。

公开(公告)号：US20050230708A1

公开(公告)日：2005-10-20

申请号：US11028370

申请日：2005-01-03

Applicant: Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

Inventor： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  C30B1/00

CPC classification number: B81C1/00293 ,  B81B2201/0228 ,  B81B2207/095 ,  B81C2201/0115 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor. It is provided that in the sensor of the invention, the covering (13) comprises a first layer (32) (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer (34) (sealing layer) located above it, and that in the method of the invention, at least the sensor chamber (28) present in the foundation wafer (11) after the establishment of the structure (26) is filled with an oxide (30), in particular CVD oxide or porous oxide; the sensor chamber (28) is covered by a first layer (32) (deposition layer), in particular of polysilicon, that is transparent to an etching medium and the reaction products or is retroactively made transparent; the oxide (30) in the sensor chamber (28) is removed through the deposition layer (32) with the etching medium; and next, a second layer (34) (sealing layer), in particular of metal or an insulator, is applied to the deposition layer (32) and hermetically seals off the sensor chamber (28).

Abstract translation: 本发明涉及具有至少一个硅基微机械结构的传感器，其与基础晶片的传感器室结合，并且在传感器室的区域中具有覆盖基础晶片的至少一个覆盖物，以及至少一个 传感器的制造方法 设置在本发明的传感器中，覆盖物（13）包括可蚀刻介质和反应产物的第一层（沉积层）和密封的第二层（34）（密封 层），并且在本发明的方法中，在建立结构（26）之后，至少存在于基础晶片（11）中的传感器室（28）填充有氧化物（30），其中 特定的CVD氧化物或多孔氧化物; 传感器室（28）由对蚀刻介质和反应产物透明的或者具有回溯性的透明的第一层（32）（沉积层）（特别是多晶硅）覆盖; 传感器室（28）中的氧化物（30）通过蚀刻介质通过沉积层（32）去除; 接下来，将特别是金属或绝缘体的第二层（34）（密封层）施加到沉积层（32）并气密地密封传感器室（28）。

公开(公告)号：US20050199973A1

公开(公告)日：2005-09-15

申请号：US11053115

申请日：2005-02-07

Applicant: Hubert Benzel ,  Gerhard Lammel

Inventor： Hubert Benzel ,  Gerhard Lammel

IPC: B81B3/00 ,  B81C1/00 ,  G01L9/00 ,  H01L21/00 ,  H01L29/84

CPC classification number: B81C1/00158 ,  B81B2201/0264 ,  B81C2201/0115 ,  B81C2201/014 ,  G01L9/0042 ,  G01L9/0054

Abstract: In a method for manufacturing a micromechanical semiconductor component, e.g., a pressure sensor, a locally limited, buried, and at least partially oxidized porous layer is produced in a semiconductor substrate. A cavity is subsequently produced in the semiconductor substrate from the back, directly underneath the porous first layer, using a trench etch process. The porous first layer is used as a stop layer for the trench. Thin diaphragms having a low thickness tolerance may thus be produced for differential pressure measurement.

Abstract translation: 在制造微机电半导体部件的方法中，例如压力传感器，在半导体衬底中产生局部限制的，掩埋的和至少部分氧化的多孔层。 随后，使用沟槽蚀刻工艺，在半导体衬底中从后部直接在多孔第一层下方产生空腔。 多孔第一层用作沟槽的停止层。 因此可以产生具有低厚度公差的薄膜，用于差压测量。

公开(公告)号：US20050189318A1

公开(公告)日：2005-09-01

申请号：US11045954

申请日：2005-01-28

Applicant: Twan Bearda ,  Eddy Kunnen

Inventor： Twan Bearda ,  Eddy Kunnen

IPC: B81B1/00 ,  C23F1/00 ,  H01L21/033 ,  H01L21/302 ,  H01L21/308 ,  H01L21/44 ,  H01L21/461 ,  H01L21/762 ,  H01L33/22

CPC classification number: B81C1/00031 ,  B81B1/002 ,  B81C2201/0115 ,  H01L21/0331 ,  H01L21/0337 ,  H01L21/3086 ,  H01L33/22 ,  Y10S438/96

Abstract: A method for forming macropores in a substrate is disclosed. On a substrate a pattern of submicron features is formed. This pattern is covered with a layer, which is preferably selectively removable with respect to the substrate and the submicron features. This cover layer is removed until the submicron features are exposed. The submicron features are then etched selectively to the cover layer, thereby creating a pattern of submicron openings in this cover layer. The patterned cover layer is used as a hardmask to etch macropores in the substrate.

Abstract translation: 公开了一种在衬底中形成大孔的方法。 在衬底上形成亚微米特征的图案。 该图案被层覆盖，该层优选地相对于基底和亚微米特征可选择性地移除。 去除该覆盖层，直到亚微米特征暴露。 然后将亚微米特征选择性地蚀刻到覆盖层，从而在该覆盖层中产生亚微米开口的图案。 图案化覆盖层用作硬掩模以蚀刻基底中的大孔。

公开(公告)号：US20050026321A1

公开(公告)日：2005-02-03

申请号：US10884867

申请日：2004-07-02

Applicant: Giuseppe D'Arrigo ,  Rosario Spinella

Inventor： Giuseppe D'Arrigo ,  Rosario Spinella

IPC: B81B3/00 ,  H01L21/00

CPC classification number: B81C1/00142 ,  B81B2201/042 ,  B81C2201/0115

Abstract: A method is provided for fabricating a semiconductor device that includes a suspended micro-system. According to the method, a silicon porous layer is formed above a silicon substrate, and the silicon porous layer is oxidized. An oxide layer is deposited, and a first polysilicon layer is deposited above the oxide layer. The first polysilicon layer, the oxide layer, and the silicon porous layer are selectively removed. A nitride layer is deposited, and a second polysilicon layer is deposited. The second polysilicon layer, the nitride layer, the first polysilicon layer, and the oxide layer are selectively removed. The silicon porous layer is removed in areas made accessible by the previous step. Also provided is a semiconductor device that includes a suspended structure fixed to at least two walls through a plurality of hinges, with the suspended structure including an oxide layer, a first polysilicon layer, a nitride layer, and a second polysilicon layer.

Abstract translation: 提供了一种用于制造包括悬浮微系统的半导体器件的方法。 根据该方法，在硅衬底上形成硅多孔层，并且硅多孔层被氧化。 沉积氧化物层，并且在氧化物层上方沉积第一多晶硅层。 选择性地去除第一多晶硅层，氧化物层和硅多孔层。 沉积氮化物层，沉积第二多晶硅层。 选择性地除去第二多晶硅层，氮化物层，第一多晶硅层和氧化物层。 在通过前一步骤可访问的区域中去除硅多孔层。 还提供了一种半导体器件，其包括通过多个铰链固定到至少两个壁的悬置结构，其中悬浮结构包括氧化物层，第一多晶硅层，氮化物层和第二多晶硅层。