公开(公告)号：US20100230049A1

公开(公告)日：2010-09-16

申请号：US12722614

申请日：2010-03-12

申请人： Oliver Ansell ,  Anthony Barrass ,  Paul Bennett ,  David Tossell

发明人： Oliver Ansell ,  Anthony Barrass ,  Paul Bennett ,  David Tossell

IPC分类号： C23F1/06

CPC分类号： H01L21/67253 ,  H01J37/32917 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972 ,  H01J37/32981 ,  H01J37/3299

摘要： Apparatus for chemically etching a workpiece includes a chamber for receiving a process gas and having a pumping port for extracting exhaust gases, and a workpiece support located in the chamber upstream of the pumping port. The chamber further includes a sub-chamber located upstream of the pumping port and downstream of the workpiece support, and the sub-chamber includes a window and an excitation source, adjacent the window, for creating a plasma in a sample of the exhaust gases to create an optical emission which can be monitored through the window.

摘要翻译： 用于化学蚀刻工件的设备包括用于接收处理气体并具有用于抽取废气的泵送端口的腔室和位于泵送端口上游的腔室中的工件支撑件。 腔室还包括位于泵送端口的上游并且在工件支撑件的下游的子室，并且子室包括与窗口相邻的窗口和激发源，用于在废气样本中产生等离子体 产生可通过窗口监测的光发射。

公开(公告)号：US20240297014A1

公开(公告)日：2024-09-05

申请号：US18647096

申请日：2024-04-26

申请人： IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

发明人： Hak Sung KIM ,  Dong Woon Park ,  Heon Su Kim ,  Sang II Kim

IPC分类号： H01J37/244 ,  H01J37/32

CPC分类号： H01J37/244 ,  H01J37/32458 ,  H01J37/32917 ,  H01J2237/24507 ,  H01J2237/24578

摘要： A plasma process monitoring apparatus using terahertz waves is provided. A plasma process monitoring apparatus using terahertz waves may comprise: a first monitoring module disposed in a direction parallel to the width direction of a wafer on the outside of a plasma chamber in which the wafer is introduced and monitoring plasma formed inside the plasma chamber during a plasma process for forming a film on the wafer by using terahertz waves; and a second monitoring module disposed outside the plasma chamber in the thickness direction of the wafer so as to face the wafer and monitoring the wafer on which a film is formed on a surface through the plasma process by using the terahertz waves.

公开(公告)号：US12062529B2

公开(公告)日：2024-08-13

申请号：US17395351

申请日：2021-08-05

申请人： Applied Materials, Inc.

发明人： David John Peterson ,  Chuang-Chia Lin

IPC分类号： H01J37/32

CPC分类号： H01J37/32917 ,  H01J37/3222 ,  H01J37/32899 ,  H01J2237/24507 ,  H01J2237/24585

摘要： Embodiments disclosed herein include sensor devices and methods of using the sensor devices. In an embodiment, a sensor device comprises a substrate, a support extending up from the substrate, and a resonator mechanically coupled to the support. In an embodiment, the sensor device further comprises an antenna that is configured to electromagnetically couple with the resonator, wherein the antenna is connected to a transmission line in the substrate.

公开(公告)号：US20240242944A1

公开(公告)日：2024-07-18

申请号：US18351242

申请日：2023-07-12

申请人： Samsung Electronics Co., Ltd.

发明人： Haewook PARK ,  Juhyun KIM ,  Younsok CHOI

IPC分类号： H01J37/32

CPC分类号： H01J37/32917 ,  H01J2237/24564

摘要： A plasma diagnostic apparatus includes a substrate having at least one probe, a plasma diagnostic circuit mounted on the substrate, configured to diagnose plasma in a chamber with the at least one probe, and to store diagnosis result information, a wireless communication circuit mounted on the substrate and configured to wirelessly transmit the diagnosis result information to an external device, and a battery mounted on the substrate and configured to supply power to the plasma diagnostic circuit and to the wireless communication circuit.

公开(公告)号：US12018361B2

公开(公告)日：2024-06-25

申请号：US17858592

申请日：2022-07-06

申请人： Applied Materials, Inc.

发明人： Shouyin Zhang ,  Keith A. Miller

IPC分类号： C23C14/54 ,  C23C14/28 ,  H01J37/32 ,  H05H1/00

CPC分类号： C23C14/54 ,  C23C14/28 ,  H01J37/32917 ,  H05H1/0081 ,  H05H2242/20

摘要： Power supplies, waveform function generators and methods for controlling a plasma process are described. The power supplies or waveform function generators include a component for executing the method in which a waveform shape change index is determined during a plasma process and evaluated for compliance with a predetermined tolerance.

公开(公告)号：US11990324B2

公开(公告)日：2024-05-21

申请号：US17685898

申请日：2022-03-03

申请人： Advanced Energy Industries, Inc.

发明人： Chad S. Samuels ,  David Coumou

IPC分类号： H01J37/32 ,  G05B13/04 ,  G05B15/02 ,  G05B19/4155 ,  H01L21/3065 ,  H01L21/67

CPC分类号： H01J37/32926 ,  G05B13/048 ,  G05B15/02 ,  G05B19/4155 ,  H01J37/32 ,  H01J37/32009 ,  H01J37/32449 ,  H01J37/32917 ,  H01J37/32935 ,  H01J37/32963 ,  H01L21/3065 ,  H01L21/67253

摘要： This disclosure describes systems, methods, and apparatus for a plasma processing system. A method comprises receiving a reference signal defining target values for a parameter that is controlled at an output within the plasma processing system, obtaining a measure of the parameter that is controlled at the output, and calculating a delay between the target values of the setpoint signal and corresponding actual parameter values achieved at the output. The method also comprises providing, based upon the delay, a time-shifted amplitude error indicative of an error between the target values and the actual parameter values and adjusting at least one actuator, based upon the delay and the time-shifted amplitude error, in advance of when an actual parameter value is desired at an actuator output of the at least one actuator while maintaining the output within a threshold range.

公开(公告)号：US20240094273A1

公开(公告)日：2024-03-21

申请号：US17947675

申请日：2022-09-19

申请人： Applied Materials, Inc.

发明人： Yue GUO ,  Kartik RAMASWAMY ,  Jie YU ,  Yang YANG

IPC分类号： G01R29/08 ,  H01J37/32

CPC分类号： G01R29/0871 ,  H01J37/32183 ,  H01J37/32917 ,  H01J2237/24592

摘要： A wideband variable impedance load for high volume manufacturing qualification and diagnostic testing of a radio frequency power source, an impedance matching network and RF sensors for generating plasma in a semiconductor plasma chamber for semiconductor fabrication processes. The wideband variable impedance load may comprise a fixed value resistance operable at a plurality of frequencies and coupled with a variable impedance network capable of transforming the fixed value resistance into a wide range of complex impedances at the plurality of frequencies. Response times and match tuning element position repeatability may be verified. Automatic testing, verification and qualification of production and field installed radio frequency power sources for plasma generation are easily performed.

公开(公告)号：US20240071737A1

公开(公告)日：2024-02-29

申请号：US18188540

申请日：2023-03-23

申请人： Samsung Electronics Co., Ltd.

发明人： Sungwon Cho ,  Dohoon Kwon ,  Kyunghyun Kim ,  Dougyong Sung ,  Jungmo Yang ,  Younseon Wang ,  Younsok Choi

IPC分类号： H01J37/32 ,  G01N9/00

CPC分类号： H01J37/32917 ,  G01N9/00 ,  H01J2237/24585

摘要： A plasma sensor module may include an upper substrate, a lower substrate, at least one probe and a printed circuit board (PCB). The upper substrate may be configured to be exposed to plasma. The lower substrate may contact a lower surface of the upper substrate. The lower substrate may have a thickness that is thicker than a thickness of the upper substrate. The probe may be in the lower substrate. The PCB may be in the lower substrate. The PCB may be configured to apply an alternating current to the probe to detect a density of the plasma. Thus, the structural strength of the plasma sensor module may have improved structural strength.

公开(公告)号：US11735401B2

公开(公告)日：2023-08-22

申请号：US17466912

申请日：2021-09-03

申请人： Applied Materials, Inc.

发明人： Chuang-Chia Lin ,  Upendra Ummethala ,  Steven E. Babayan ,  Lei Lian

IPC分类号： G01J3/443 ,  G01J3/02 ,  H01J37/32 ,  H01J37/22

CPC分类号： H01J37/32917 ,  G01J3/0218 ,  G01J3/443 ,  H01J37/22 ,  H01J2237/24585

摘要： Embodiments disclosed herein include optical sensor systems and methods of using such systems. In an embodiment, the optical sensor system comprises a housing and an optical path through the housing. In an embodiment, the optical path comprises a first end and a second end. In an embodiment a reflector is at the first end of the optical path, and a lens is between the reflector and the second end of the optical path. In an embodiment, the optical sensor further comprises an opening through the housing between the lens and the reflector.

公开(公告)号：US20190064075A1

公开(公告)日：2019-02-28

申请号：US16072505

申请日：2017-01-25

申请人： FORSCHUNGSZENTRUM JUELICH GMBH

发明人： Oleksandr MARCHUK ,  Christian BRANDT ,  Albrecht POSPIESZCZYK

IPC分类号： G01N21/73 ,  G01J3/443 ,  G01N21/66 ,  H01J37/32

CPC分类号： G01N21/73 ,  G01J3/443 ,  G01N21/66 ,  G01N21/71 ,  H01J37/32917

摘要： The invention relates to a method and to a device for the in situ determination of the surface characteristics of conductive targets. The method according to the invention makes it possible to measure the energy distribution and angle distribution of the hydrogen or deuterium atoms scattered at a metal surface. From the Doppler shift of the blue- and red-shifted components of the induced Balmer lines, the spectral or specular reflectivity of the surface can be directly measured. Furthermore, the mass of the atoms at the surface of the target can be determined.