公开(公告)号：US20110226324A1

公开(公告)日：2011-09-22

申请号：US13026228

申请日：2011-02-12

Applicant: Fritz Jürgen Wisotzki

Inventor： Fritz Jürgen Wisotzki

IPC: H01L31/0264 ,  C30B7/00 ,  C30B9/00 ,  C30B11/00 ,  H01L31/04 ,  H01L31/18

CPC classification number: C30B29/48 ,  C30B11/00 ,  C30B23/02 ,  C30B29/02 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/1804 ,  H01L31/1808 ,  H01L31/1828 ,  H01L31/1892 ,  Y02E10/543 ,  Y02E10/547 ,  Y02P70/521

Abstract: A process and the required technical arrangement has been developed to produce single crystal solar panels or otherwise used semiconductors, which starts with the raw material to produce single crystal copper ribbons, extruded directly from the melt, with unharmed and optical surfaces onto which in the next unit a silicon or germanium film will be deposited. In the next unit the copper ribbon will be removed from the silicon film, whilst a hard plastic support or ceramic support is mounted, leaving copper contours on the silicon film to be used as electrical conductors or contacts. In the next unit a thin film is deposited of II-VI-compounds that enhance the infrared sensitivity of the base film of silicon or germanium up to 56% of the incoming light. This technology guarantees the lowest possible cost in production of the highest possible efficiency of materials for infrared applications and also for electronic applications.

Abstract translation: 已经开发了一种工艺和所需的技术方案，以生产单晶太阳能电池板或其他用途的半导体，其以原料开始，以生产直接从熔体直接挤出的单晶铜带，其中未受损伤和光学表面在下一个 单位硅或锗膜将被沉积。 在下一个单元中，铜带将从硅膜中移除，同时安装硬质塑料支架或陶瓷支架，留下硅膜上的铜轮廓作为电导体或触点使用。 在下一个单元中，沉积II-VI化合物的薄膜，其增强硅或锗的基膜的红外灵敏度高达入射光的56％。 该技术保证了生产用于红外应用和电子应用的材料的最高效率的最低可能成本。

公开(公告)号：US20110169007A1

公开(公告)日：2011-07-14

申请号：US13072182

申请日：2011-03-25

Applicant: Leonard Forbes ,  Kie Y. Ahn

Inventor： Leonard Forbes ,  Kie Y. Ahn

IPC: H01L29/161

CPC classification number: H01L29/167 ,  H01L31/1808 ,  H01L31/1812 ,  Y02E10/50

Abstract: A passivated germanium surface that is a germanium carbide material formed on and in contact with the termanium material. An intermediate semiconductor device structure and a semiconductor device structure, each of which comprises the passivated germanium having germanium carbide material thereon, are also disclosed.

Abstract translation: 钝化的锗表面，其是在锗材料上形成并与锗材料接触的碳化锗材料。 还公开了一种中间半导体器件结构和半导体器件结构，其中每个包括其上具有碳化锗材料的钝化锗。

公开(公告)号：US07948010B2

公开(公告)日：2011-05-24

申请号：US12484936

申请日：2009-06-15

Applicant: Miriam Reshotko ,  Been-Yih Jin

Inventor： Miriam Reshotko ,  Been-Yih Jin

IPC: H01L21/02

CPC classification number: H01L31/09 ,  H01L31/1804 ,  H01L31/1808 ,  Y02E10/547 ,  Y02P70/521

Abstract: Dual seed semiconductor photodetectors and methods to fabricate thereof are described. A dual seed semiconductor photodetector is formed directly on an insulating layer on a substrate. The dual seed semiconductor photodetector includes an optical layer formed on a dual seed semiconductor layer. The dual seed semiconductor layer includes a seed layer and a buffer layer. The seed layer of a first material is formed on an insulating layer over a substrate. The buffer layer is formed on the seed layer. Next, an optical layer of a second material is formed on the buffer layer. The buffer layer includes the first material and the second material. In one embodiment, the first material is silicon. In one embodiment, the second material is germanium.

Abstract translation: 描述了双种子半导体光电探测器及其制造方法。 双种子半导体光电检测器直接形成在基板上的绝缘层上。 双种子半导体光电检测器包括形成在双种子半导体层上的光学层。 双种子半导体层包括种子层和缓冲层。 第一材料的种子层在衬底上的绝缘层上形成。 缓冲层形成在种子层上。 接着，在缓冲层上形成第二材料的光学层。 缓冲层包括第一材料和第二材料。 在一个实施例中，第一材料是硅。 在一个实施例中，第二材料是锗。

公开(公告)号：US07915712B2

公开(公告)日：2011-03-29

申请号：US12120013

申请日：2008-05-13

Applicant: Leonard Forbes ,  Kie Y. Ahn

Inventor： Leonard Forbes ,  Kie Y. Ahn

IPC: H01L29/06

CPC classification number: H01L29/167 ,  H01L31/1808 ,  H01L31/1812 ,  Y02E10/50

Abstract: A method of passivating germanium that comprises providing a germanium material and carburizing the germanium material to form a germanium carbide material. The germanium carbide material may be formed by microwave plasma-enhanced chemical vapor deposition by exposing the germanium material to a microwave-generated plasma that is formed from a carbon-containing source gas and hydrogen. The source gas may be a carbon-containing gas selected from the group consisting of ethylene, acetylene, ethanol, a hydrocarbon gas having from one to ten carbon atoms per molecule, and mixtures thereof. The resulting germanium carbide material may be amorphous and hydrogenated. The germanium material may be carburized without forming a distinct boundary at an interface between the germanium material and the germanium carbide material. An intermediate semiconductor device structure and a semiconductor device structure, each of which comprises the germanium carbide material, are also disclosed.

Abstract translation: 一种钝化锗的方法，其包括提供锗材料并渗碳锗材料以形成碳化锗材料。 可以通过将锗材料暴露于由含碳源气体和氢形成的微波产生的等离子体中，通过微波等离子体增强化学气相沉积形成碳化锗材料。 源气体可以是选自乙烯，乙炔，乙醇，每分子具有1至10个碳原子的烃气体及其混合物的含碳气体。 所得的碳化锗材料可以是无定形的和氢化的。 锗材料可以在锗材料和碳化锗材料之间的界面处形成不同边界的渗碳。 还公开了包括碳化锗材料的中间半导体器件结构和半导体器件结构。

公开(公告)号：US20110049568A1

公开(公告)日：2011-03-03

申请号：US12845593

申请日：2010-07-28

Applicant: Anthony J. Lochtefeld ,  Matthew T. Currie ,  Zhiyuan Cheng ,  James Fiorenza ,  Glyn Braithwaite ,  Thomas A. Langdo

Inventor： Anthony J. Lochtefeld ,  Matthew T. Currie ,  Zhiyuan Cheng ,  James Fiorenza ,  Glyn Braithwaite ,  Thomas A. Langdo

IPC: H01L29/06

CPC classification number: H01L21/02609 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02612 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/28255 ,  H01L21/28264 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/092 ,  H01L29/04 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/20 ,  H01L29/66666 ,  H01L29/66795 ,  H01L29/778 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/7835 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/78687 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/036 ,  H01L31/1808 ,  H01L33/20 ,  H01L33/30 ,  H01L33/34 ,  Y02E10/50

Abstract: Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.

Abstract translation: 具有有限区域的单片晶格失配的半导体异质结构的制造，其具有基本上耗尽穿透位错的上部，以及基于这种晶格失配的异质结构的半导体器件的制造。

公开(公告)号：US20110031578A1

公开(公告)日：2011-02-10

申请号：US12838444

申请日：2010-07-17

Applicant: Makoto MIURA ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

Inventor： Makoto MIURA ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

IPC: H01L31/10 ,  H01L31/18

CPC classification number: H01L21/02639 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1124 ,  H01L31/1808 ,  Y02E10/547

Abstract: A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor layer formed above the first semiconductor layer; a first conduction type third semiconductor layer formed above the second semiconductor layer; and a second conduction type fourth semiconductor layer buried in the second semiconductor layer, in which the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.

Abstract translation: 半导体光电二极管包括半导体衬底; 形成在半导体衬底上的第一导电型第一半导体层; 形成在所述第一半导体层上方的高电阻第二半导体层; 形成在所述第二半导体层上方的第一导电型第三半导体层; 以及埋在第二半导体层中的第二导电型第四半导体层，其中第四半导体层在与半导体衬底的表面水平的方向上以预定距离分开。

公开(公告)号：US20110031529A1

公开(公告)日：2011-02-10

申请号：US12838445

申请日：2010-07-17

Applicant: Makoto MIURA ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

Inventor： Makoto MIURA ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/10

CPC classification number: H01L31/03921 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1808 ,  Y02E10/547

Abstract: A semiconductor photodiode device includes a semiconductor substrate, a first buffer layer containing a material different from that of the semiconductor substrate in a portion thereof, a first semiconductor layer formed above the buffer layer and having a lattice constant different from that of the semiconductor substrate, a second buffer layer formed above the first semiconductor layer and containing an element identical with that of the first semiconductor layer in a portion thereof, and a second semiconductor layer formed above the buffer layer in which a portion of the first semiconductor layer is formed of a plurality of island shape portions each surrounded with an insulating film, and the second buffer layer allows adjacent islands of the first semiconductor layer to coalesce with each other and is in contact with the insulating film.

Abstract translation: 半导体光电二极管装置包括半导体衬底，第一缓冲层，其部分含有不同于半导体衬底的材料;第一半导体层，形成在缓冲层上方，具有不同于半导体衬底的晶格常数; 第二缓冲层，形成在第一半导体层的上方，并且在其一部分中含有与第一半导体层相同的元件;以及第二半导体层，形成在缓冲层的上方，第一半导体层的一部分由 多个岛状部分，各自被绝缘膜包围，第二缓冲层允许第一半导体层的相邻岛状物彼此聚结并与绝缘膜接触。

公开(公告)号：US07811913B2

公开(公告)日：2010-10-12

申请号：US11312967

申请日：2005-12-19

Applicant: Jong-Jan Lee ,  Douglas J. Tweet ,  Jer-Shen Maa ,  Sheng Teng Hsu

Inventor： Jong-Jan Lee ,  Douglas J. Tweet ,  Jer-Shen Maa ,  Sheng Teng Hsu

IPC: H01L21/265

CPC classification number: H01L31/105 ,  H01L31/1808 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S438/933

Abstract: A method of fabricating a low, dark-current germanium-on-silicon PIN photo detector includes preparing a P-type silicon wafer; implanting the P-type silicon wafer with boron ions; activating the boron ions to form a P+ region on the silicon wafer; forming a boron-doped germanium layer on the P+ silicon surface; depositing an intrinsic germanium layer on the boron-doped germanium layer; cyclic annealing, including a relatively high temperature first anneal step and a relatively low temperature second anneal step; repeating the first and second anneal steps for about twenty cycles, thereby forcing crystal defects to the P+ germanium layer; implanting ions in the surface of germanium layer to form an N+ germanium surface layer and a PIN diode; activating the N+ germanium surface layer by thermal anneal; and completing device according to known techniques to form a low dark-current germanium-on-silicon PIN photodetector.

Abstract translation: 制造低，暗电流锗硅PIN光检测器的方法包括制备P型硅晶片; 用硼离子注入P型硅晶片; 激活硼离子以在硅晶片上形成P +区; 在P +硅表面上形成硼掺杂锗层; 在硼掺杂的锗层上沉积本征锗层; 循环退火，包括相对高温的第一退火步骤和相对低温的第二退火步骤; 重复第一和第二退火步骤约20个循环，由此迫使晶体缺陷到P +锗层; 在锗层表面注入离子以形成N +锗表面层和PIN二极管; 通过热退火来活化N +锗表面层; 并根据已知技术完成器件以形成低暗电流锗硅PIN光电探测器。

公开(公告)号：US20100213561A1

公开(公告)日：2010-08-26

申请号：US12775084

申请日：2010-05-06

Applicant: Solomon Assefa ,  Stephen Walter Bedell ,  Yurii A. Vlasov ,  Fengnian Xia

Inventor： Solomon Assefa ,  Stephen Walter Bedell ,  Yurii A. Vlasov ,  Fengnian Xia

IPC: H01L31/0232

CPC classification number: H01L31/1808 ,  G02B6/12004 ,  H01L31/02327 ,  H01L31/105 ,  H01L31/1812 ,  Y02E10/50

Abstract: An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.

Abstract translation: 光电子器件包括光电检测器特征，设置在光电检测器特征的至少一部分上方的界面层，以及设置在界面层的至少一部分上的垂直接触。 光电检测器特征包括锗并且可操作以将光信号转换成电信号。 界面层包括镍。 最后，垂直接触可操作地从光电检测器特征传输电信号。

公开(公告)号：US20100193002A1

公开(公告)日：2010-08-05

申请号：US12451192

申请日：2008-05-14

Applicant: Frank Dimroth ,  Jara Fernandez ,  Stefan Janz

Inventor： Frank Dimroth ,  Jara Fernandez ,  Stefan Janz

IPC: H01L35/00 ,  H01L29/16 ,  H01L21/302 ,  H01L31/18

CPC classification number: H01L31/078 ,  H01L21/02529 ,  H01L21/0262 ,  H01L31/1808 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: The invention relates to a semiconductor component which contains one semiconductor layer containing germanium. On the rear-side, i.e. on the side orientated away from the incident light, the semiconductor layer has at least one layer containing silicon carbide which serves, on the one hand, for the reflection of radiation and also as rear-side passivation or as diffusion barrier. A method for the production of semiconductor components of this type is likewise described. The semiconductor components according to the invention are used in particular as thermophotovoltaic cells or multiple solar cells based on germanium.

Abstract translation: 本发明涉及包含一个含有锗的半导体层的半导体部件。 在后侧，即在远离入射光的一侧上，半导体层具有至少一层含有碳化硅的层，一方面用于反射辐射，也用作背面钝化或如 扩散屏障。 同样描述了用于制造这种类型的半导体部件的方法。 根据本发明的半导体组件特别用作基于锗的热光伏电池或多个太阳能电池。