摘要:
An image sensor is provided. The image sensor includes a pixel array having active pixel sensors arranged in rows and columns; a correlated double sampler that converts sensing signals transferred from pixels sensors selected from the active pixel sensors to correlated double sampling signals and outputs a conversion result by column; and an analog-to-digital converter that converts the correlated double sampling signals corresponding to plural columns to digital signals using a global code. The analog-to-digital converter includes a column shared operator that performs a digital conversion operation on correlated double sampling signals corresponding to two or more columns of the plural columns.
摘要:
Provided herein is a novel pixel circuit for image sensors such as IR ROIC image sensors. The design provides a switchable pixel with two modes. In the first mode, the pixel performs in-pixel correlated double sampling to remove reset noise. In the second mode, the pixel is configured in a high-capacity mode to avoid saturation. The pixel may be dynamically switched between modes, for example in response to lighting conditions in the scene to be imaged.
摘要:
Disclosed herein is an image pickup circuit including: amplifying means for amplifying a charge corresponding to an amount of light received by a photodetector, and outputting a pixel signal; ramp signal generating means for generating a ramp signal whose voltage drops with a fixed slope from a predetermined initial voltage; and comparing means for comparing the pixel signal output by the amplifying means with the ramp signal output by the ramp signal generating means. A reference potential of the pixel signal output by the amplifying means and a reference potential of the ramp signal output by the ramp signal generating means are at a same level.
摘要:
A solid-state imaging device includes a pixel array section and a signal processing section. The pixel array section is configured to include a plurality of arranged rectangular pixels, each of which has different sizes in the vertical and horizontal directions, and a plurality of adjacent ones of which are combined to form a square pixel having the same size in the vertical and horizontal directions. The signal processing section is configured to perform a process of outputting, as a single signal, a plurality of signals read out from the combined plurality of rectangular pixels.
摘要:
An image capturing apparatus includes: plural pixels arranged in matrix, each outputting a signal from a photoelectric conversion element; and plural readout circuits each provided for a corresponding column of the pixels, signals from the pixels being input to the readout circuits. The readout circuit includes an amplifier unit configured to amplify the signal from the pixel, and have a variable gain, and a hold capacitance connected to an output terminal of the amplifier unit via a sampling switch, and having a variable capacitance value. When the variable gain of the amplifier unit is set to be a first gain, the variable capacitance value of the hold capacitance is set to be a first capacitance value. When the variable gain is set to be a second gain larger than the first gain, the variable capacitance value is set to be a second capacitance value smaller than the first capacitance value.
摘要:
An imaging apparatus and a method of driving the same that can generate a digital data of a high resolution pixel signal are provided. The imaging apparatus includes: a pixel (10-1) for generating a signal by photoelectric conversion; a comparing circuit (30-1) for comparing a signal based on the pixel with a time-dependent reference signal; a counter circuit (40-1) performing a counting operating until an inversion of a magnitude relation between the signal based on the pixel and the time-dependent reference signal; and a selecting circuit (30-2) for setting a time-dependent change rate of the reference signal, according to a signal level of the signal based on the pixel.
摘要:
A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.
摘要:
An imaging device whose dynamic range can be wide with a simple structure is provided. In a circuit configuration and an operation method of the imaging device, whether a charge detection portion provided in a pixel is saturated with electrons is determined and an operation mode is changed depending on the determination result. First imaging data is captured first, and is read out in the case where the charge detection portion is not saturated with electrons. In the case where the charge detection portion is saturated with electrons, the saturation of the charge detection portion is eliminated and second imaging data is captured and read out.
摘要:
A solid-state imaging device includes: multiple micro lenses, which are disposed in each of a first direction and a second direction orthogonal to the first direction, focus the incident light into the light-receiving surface; with the multiple micro lenses of which the planar shape is a shape including a portion divided by a side extending in the first direction and a side extending in the second direction being disposed arrayed mutually adjacent to each of the first direction and the second direction; and with the multiple micro lenses being formed so that the depth of a groove between micro lenses arrayed in a third direction is deeper than the depth of a groove between micro lenses arrayed in the first direction, and also the curvature of the lens surface in the third direction is higher than the curvature of the lens surface in the first direction.
摘要:
One imaging apparatus includes a first amplifier circuit, a second amplifier circuit, and a limiter circuit that limits the output of the first amplifier circuit, and further includes a configuration to clamp the output of the limiter circuit. Moreover, another imaging apparatus includes a fully differential amplifier circuit that outputs an amplified noise signal amplified from a noise signal, and an amplified optical signal amplified from an optical signal, and an output limiting circuit that limits each of the amplitude range of the amplified noise signal and the amplitude range the amplified optical signal.