公开(公告)号：US20170256394A1

公开(公告)日：2017-09-07

申请号：US15598763

申请日：2017-05-18

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC: H01L21/02 ,  B23K26/03 ,  B23K26/073 ,  B23K26/12 ,  B23K26/122 ,  H01L21/268 ,  H01L29/20

CPC classification number: H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

Abstract: Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US20170016299A1

公开(公告)日：2017-01-19

申请号：US15218509

申请日：2016-07-25

Applicant: FORO ENERGY, INC.

Inventor： Brian O. Faircloth ,  Daryl Grubb ,  Scott A. Marshall ,  Mark S. Zediker ,  Kenneth L. Havlinek

IPC: E21B29/02 ,  H01S3/04 ,  E21B47/00 ,  E21B47/12 ,  B23K26/122 ,  B23K26/00 ,  B23K26/16 ,  B23K26/12 ,  B23K26/38 ,  H01S3/00 ,  E21B41/00

CPC classification number: E21B29/02 ,  B23K26/38 ,  B23K2101/04 ,  B60P1/5423 ,  B66C23/36 ,  E21B41/00 ,  H01S3/0071 ,  H01S3/04

Abstract: There are provided high power laser systems for performing decommissioning of structures in land based boreholes, and wells, offshore, and other remote and hazardous locations, and using those system to perform decommissioning operations. In particular embodiments the laser system is a Class I system and reduces emission of materials created during laser cutting operations. The laser systems can include lifting and removal equipment for removing laser sectioned material.

Abstract translation: 提供高功率激光系统，用于在陆基钻孔，井，海上和其他远程和危险场所的结构退役，并使用这些系统执行退役操作。 在特定实施例中，激光系统是I类系统，并减少在激光切割操作期间产生的材料的发射。 激光系统可以包括用于去除激光切片材料的提升和移除设备。

公开(公告)号：US20160001400A1

公开(公告)日：2016-01-07

申请号：US14768448

申请日：2014-02-25

Applicant: SCHLUMBERGER TECHNOLOGY CORPORATION

Inventor： Richard Saenger

IPC: B23K26/122 ,  B23K26/21

CPC classification number: B23K26/122 ,  B23K26/1224 ,  B23K26/128 ,  B23K26/21 ,  B23K26/211 ,  E21B43/11 ,  E21B43/1195 ,  E21B47/123

Abstract: Systems and methods are provided for laser heating in a fluid environment (30). Such a system may include a laser generator (12) and a laser output sub (16) separate from one another via an optical fiber (18). The laser generator may generate a heating laser pulse over the optical fiber. The laser output sub may emit the heating laser pulse to heat a substrate (22) in the fluid environment (30). To enable the heating laser pulse to pass between the laser output sub (16) and the substrate (22), the laser output sub may dispense a laser-transmissive optical grease or a laser-transmissive magnetic fluid, or may generate a vacuum cavitation bubble in the fluid between the laser output sub (16) and the substrate (22).

Abstract translation: 提供了用于在流体环境（30）中进行激光加热的系统和方法。 这种系统可以包括经由光纤（18）彼此分离的激光发生器（12）和激光输出子（16）。 激光发生器可以在光纤上产生加热激光脉冲。 激光输出sub可以发射加热激光脉冲以加热流体环境（30）中的衬底（22）。 为了使加热激光脉冲在激光输出副（16）和基板（22）之间通过，激光输出副可以分配激光透射光学润滑脂或激光透射磁性流体，或者可以产生真空空化气泡 在激光输出子（16）和衬底（22）之间的流体中。

公开(公告)号：US09136146B2

公开(公告)日：2015-09-15

申请号：US14073460

申请日：2013-11-06

Applicant: President & Fellows Of Harvard College

Inventor： Eric Mazur ,  Mengyan Shen

IPC: B23K26/122 ,  B23K26/12 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/268 ,  B23K26/1224 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02686 ,  H01L21/2252 ,  H01L21/302 ,  H01L21/67075 ,  Y10S438/94

Abstract: The present invention generally provides semiconductor substrates having submicronsized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Abstract translation: 本发明通常提供具有通过用超短激光脉冲照射表面而产生的亚微米表面特征的半导体衬底。 一方面，公开了一种处理半导体衬底的方法，其包括将衬底的至少一部分表面与流体接触，并将该表面部分暴露于一个或多个飞秒脉冲，以便修改 那部分。 该修改可以包括例如在表面的上层中生成多个亚微米尺寸的尖峰。

公开(公告)号：US5601738A

公开(公告)日：1997-02-11

申请号：US276045

申请日：1994-07-14

Applicant: Ralf Engelhardt ,  Alfred Vogel

Inventor： Ralf Engelhardt ,  Alfred Vogel

IPC: A61B17/00 ,  A61B17/22 ,  A61B18/20 ,  B23K26/122 ,  B23K26/12 ,  B23K26/14

CPC classification number: B23K26/122 ,  A61B2017/00176 ,  A61B2017/22008 ,  A61B2017/22089 ,  A61B2018/2025

Abstract: A method and apparatus for reducing unwanted pressure changes generated during treatment of a target material in a liquid-filled space with a laser. A pilot pulse is generated to produce a gas bubble in a region of the liquid-filled space before a processing pulse is directed through the region and onto the target material. An impulse spacing between the pilot pulse and the processing pulse is optimized by detecting an oscillation period of the gas bubble. The pilot pulse and processing pulse may be generated by the same or separate laser sources and directed toward the target material by the same or separate conductors, respectively.

Abstract translation: 一种用于减少在用激光在液体填充空间中处理目标材料期间产生的不希望的压力变化的方法和装置。 在处理脉冲被引导通过该区域并且到达目标材料之前，产生导液脉冲以在液体填充空间的区域中产生气泡。 通过检测气泡的振荡周期来优化引导脉冲和处理脉冲之间的脉冲间隔。 导频脉冲和处理脉冲可以由相同或分开的激光源产生，并分别通过相同或分开的导体朝向目标材料。