公开(公告)号：US09691613B2

公开(公告)日：2017-06-27

申请号：US14899552

申请日：2014-06-25

申请人： Ultratech, Inc.

发明人： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/04 ,  H01L21/02 ,  C23C16/22 ,  H01L29/20 ,  H01L21/268 ,  B23K26/03 ,  B23K26/073 ,  B23K26/122 ,  C23C16/56 ,  H01L21/324 ,  B23K26/12 ,  B23K103/00

摘要： Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US20170073812A1

公开(公告)日：2017-03-16

申请号：US15257493

申请日：2016-09-06

申请人： Ultratech, Inc.

发明人： Ganesh Sundaram

IPC分类号： C23C16/455 ,  C23C16/56 ,  C23C16/48 ,  C23C16/50

CPC分类号： C23C16/56 ,  C23C16/305 ,  C23C16/405 ,  C23C16/45542 ,  C23C16/45544 ,  H01J37/32357 ,  H01J37/32458 ,  H01J37/32724

摘要： Methods of forming 2D metal chalcogenide films using laser-assisted atomic layer deposition are disclosed. A direct-growth method includes: adhering a layer of metal-bearing molecules to the surface of a heated substrate; then reacting the layer of metal-bearing molecules with a chalcogenide-bearing radicalized precursor gas delivered using a plasma to form an amorphous 2D film of the metal chalcogenide; then laser annealing the amorphous 2D film to form a crystalline 2D film of the metal chalcogenide, which can have the form MX or MX2, where M is a metal and X is the chalcogenide. An indirect growth method that includes forming an MO3 film is also disclosed.

摘要翻译： 公开了使用激光辅助原子层沉积形成二维金属硫族化物膜的方法。 直接生长方法包括：将一层含金属的分子粘附到加热的基底的表面上; 然后使含金属分子层与带有硫族化物的自由基化的前体气体一起使用等离子体输送，以形成金属硫族化物的无定形2D膜; 然后激光退火无定形2D膜以形成金属硫族化物的结晶2D膜，其可以具有MX或MX2的形式，其中M是金属，X是硫族化物。 还公开了包括形成MO 3膜的间接生长方法。

公开(公告)号：US20160203972A1

公开(公告)日：2016-07-14

申请号：US14909004

申请日：2014-09-17

申请人： ULTRATECH, INC.

发明人： Ganesh Sundaram ,  Andrew M. Hawryluk ,  Daniel Stearns

IPC分类号： H01L21/02 ,  H01L29/20 ,  C23C16/22

CPC分类号： H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

摘要： Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably selected to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layers after deposition by ALD. In preferred embodiments a silicon substrate is overlaid with an AIN nucleation layer and laser annealed. Thereafter a GaN device layers is applied over the AIN layer by an ALD process and then laser annealed. In a further example embodiment a transition layer is applied between the GaN device layer and the AIN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-x compound wherein the composition of the transition layer is continuously varied from AIN to GaN.

摘要翻译： 原子层沉积（ALD）用于在80-400℃的反应温度下进行异质外延膜生长。优选选择底物和膜材料以利用域匹配外延（DME）。 激光退火系统用于通过ALD沉积后对沉积层进行热退火。 在优选实施例中，硅衬底用AIN成核层覆盖并进行激光退火。 此后，通过ALD工艺将GaN器件层施加在AIN层上，然后进行激光退火。 在另一示例实施例中，将过渡层施加在GaN器件层和AIN成核层之间。 过渡层包括一个或多个不同的过渡材料层，每个过渡材料层均包含Al x Ga 1-x化合物，其中过渡层的组成从AIN到GaN连续变化。

公开(公告)号：US09768016B2

公开(公告)日：2017-09-19

申请号：US14899552

申请日：2014-06-25

申请人： Ultratech, Inc.

发明人： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/04 ,  H01L21/02 ,  B23K26/03 ,  B23K26/073 ,  B23K26/122 ,  B23K26/12 ,  C23C16/22 ,  C23C16/56 ,  H01L21/268 ,  H01L21/324 ,  H01L29/20 ,  B23K103/00

CPC分类号： H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

摘要： Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US09666432B2

公开(公告)日：2017-05-30

申请号：US14909004

申请日：2014-09-17

申请人： Ultratech, Inc.

发明人： Ganesh Sundaram ,  Andrew M. Hawryluk ,  Daniel Stearns

IPC分类号： H01L29/15 ,  H01L31/0256 ,  H01L21/02 ,  C23C16/22 ,  H01L29/20 ,  H01L21/268 ,  B23K26/03 ,  B23K26/073 ,  B23K26/122 ,  C23C16/56 ,  H01L21/324 ,  B23K103/00

CPC分类号： H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

摘要： Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably selected to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layers after deposition by ALD. In preferred embodiments a silicon substrate is overlaid with an AIN nucleation layer and laser annealed. Thereafter a GaN device layers is applied over the AIN layer by an ALD process and then laser annealed. In a further example embodiment a transition layer is applied between the GaN device layer and the AIN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-x compound wherein the composition of the transition layer is continuously varied from AIN to GaN.

公开(公告)号：US10090153B2

公开(公告)日：2018-10-02

申请号：US15598763

申请日：2017-05-18

申请人： Ultratech, Inc.

发明人： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L33/00 ,  H01L21/02 ,  H01L21/268 ,  B23K26/12 ,  H01L29/20 ,  B23K26/03 ,  B23K26/073 ,  B23K26/122 ,  C23C16/56 ,  H01L21/324 ,  C23C16/22 ,  B23K103/00

摘要： Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US20180226241A1

公开(公告)日：2018-08-09

申请号：US15943115

申请日：2018-04-02

申请人： Ultratech, Inc.

发明人： Ganesh Sundaram ,  Andrew M. Hawryluk ,  Daniel Stearns

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L21/324 ,  C30B25/18 ,  C30B29/40 ,  C30B29/06

CPC分类号： H01L21/0251 ,  C23C16/303 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/46 ,  C23C16/56 ,  C30B25/02 ,  C30B25/183 ,  C30B29/06 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02694 ,  H01L21/3245 ,  H01L29/2003

摘要： Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably matched to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layer after deposition by ALD. In preferred embodiments, a silicon substrate is overlaid with an AlN nucleation layer and laser annealed. Thereafter a GaN device layer is applied over the AlN layer by an ALD process and then laser annealed. In a further example embodiment, a transition layer is applied between the GaN device layer and the AlN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-xN compound wherein the composition of the transition layer is continuously varied from AlN to GaN.

公开(公告)号：US20170256394A1

公开(公告)日：2017-09-07

申请号：US15598763

申请日：2017-05-18

申请人： Ultratech, Inc.

发明人： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC分类号： H01L21/02 ,  B23K26/03 ,  B23K26/073 ,  B23K26/12 ,  B23K26/122 ,  H01L21/268 ,  H01L29/20

CPC分类号： H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

摘要： Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US10249491B2

公开(公告)日：2019-04-02

申请号：US15943115

申请日：2018-04-02

申请人： Ultratech, Inc.

发明人： Ganesh Sundaram ,  Andrew M. Hawryluk ,  Daniel Stearns

IPC分类号： C23C16/30 ,  C23C16/46 ,  C23C16/56 ,  C30B25/02 ,  C30B25/18 ,  C30B29/06 ,  C30B29/40 ,  H01L21/02 ,  H01L29/20 ,  C23C16/455 ,  H01L21/324

摘要： Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably matched to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layer after deposition by ALD. In preferred embodiments, a silicon substrate is overlaid with an AlN nucleation layer and laser annealed. Thereafter a GaN device layer is applied over the AlN layer by an ALD process and then laser annealed. In a further example embodiment, a transition layer is applied between the GaN device layer and the AlN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-xN compound wherein the composition of the transition layer is continuously varied from AlN to GaN.

公开(公告)号：US20180216232A1

公开(公告)日：2018-08-02

申请号：US15940533

申请日：2018-03-29

申请人： Ultratech, Inc.

发明人： Ganesh Sundaram

IPC分类号： C23C16/56 ,  C23C16/455 ,  C23C16/30 ,  H01J37/32 ,  C23C16/40

CPC分类号： C23C16/56 ,  C23C16/305 ,  C23C16/405 ,  C23C16/45542 ,  C23C16/45544 ,  H01J37/32357 ,  H01J37/32458 ,  H01J37/32724

摘要： Methods of forming 2D metal chalcogenide films using laser-assisted atomic layer deposition are disclosed. A direct-growth method includes: adhering a layer of metal-bearing molecules to the surface of a heated substrate; then reacting the layer of metal-bearing molecules with a chalcogenide-bearing radicalized precursor gas delivered using a plasma to form an amorphous 2D film of the metal chalcogenide; then laser annealing the amorphous 2D film to form a crystalline 2D film of the metal chalcogenide, which can have the form MX or MX2, where M is a metal and X is the chalcogenide. An indirect growth method that includes forming an MO3 film is also disclosed.