Abstract:
To obtain a paste for electron sources which can enhance heat resistance of carbon nanotubes, which can suppress burn-out of the carbon nanotubes even during heating at a high temperature, and can exhibit a high electron emission performance, boron (B) is added to the paste formed of the carbon nanotubes and metal. Due to the addition of boron, the oxidation of the carbon nanotubes can be suppressed, and the degradation of the electron emission characteristics and the degradation of the uniformity of the emission of electrons during the heating process such as baking can be prevented.
Abstract:
An electron emitter includes a lower electrode formed on a glass substrate, an emitter section made of dielectric film formed on the lower electrode, and an upper electrode formed on the emitter section. A drive voltage for electron emission is applied between the upper electrode and the lower electrode. At least the upper electrode has a plurality of through regions through which the emitter section is exposed. The upper electrode has a surface which faces the emitter section in peripheral portions of the through regions and which is spaced from the emitter section.
Abstract:
A carbon nanotube device in accordance with the invention includes a support structure including an aperture extending from a front surface to a back surface of the structure. At least one carbon nanotube extends across the aperture and is accessible through the aperture from both the front surface and the back surface of the support structure.
Abstract:
The present invention provides a micro power switch comprising a cold cathode for emitting electrons, an anode for capturing the electrons emitted from the cold cathode, and a control electrode for controlling an amount of the electrons emitted from the cold cathode, wherein the cold cathode is made of material having a smaller electron emission barrier than the control electrode, the anode is applied with a positive potential in relation to the cold cathode, and the control electrode is applied with a potential equal to or lower than a potential of the cold cathode.
Abstract:
A field-emission device takes the form of an anode and a cathode, both being placed on a substrate made of a dielectric material. The anode is situated at a level which is below the level of an edge of the cathode which faces towards the anode.
Abstract:
A field emission device in which resistors are used and a method for fabricating the same are provided. The resistor layer is formed by depositing diamond like carbon (DLC) on the cathodes by the PECVD method in the field emission device using the resistor according to the present invention. Accordingly, fabrication yield is high since the adhesion of the resistor layer to the cathodes is improved. Various types of resistor layers can be formed since the resistor layer has excellent chemical durability. The reliability and consistency of the fabrication process is improved since the doping level is easily controlled.
Abstract:
An electron emission device includes: a semiconductor layer; a porous semiconductor; and a thin-film metal electrode which are layered in turn. The electrode faces a vacuum space. The porous semiconductor layer has at least two or more of porosity-changed layers which have porosities which are different from each other in the thickness direction. The electron emission device emits electrons when an electric field is applied between the semiconductor layer and the thin-film metal electrode. An insulator layer made of a material selected from silicon oxide or silicon nitride may be formed between the porous semiconductor layer and the thin-film metal electrode. Si skeletons of the porous semiconductor layer are oxidized or nitrided.
Abstract:
A thermionic optical emission device employs a two dimensional array of thermionic elements to excite a display material, such as a phosphor coating, thus producing the image viewed by an observer. Each pixel of the desired display corresponds to the electron emissions of thermionic elements. Each pixel may correspond to less than 1 or more than 1000 thermionic elements. In color displays, each pixel of the desired display includes an area of red phosphor, blue phosphor, and green phosphor. Each of the thermionic elements included in the thermionic optical emission device includes a substrate, a conductive material formed on the substrate and forming electrically isolated segments, a cathode formed adjacent to the conductive material and electrically coupling the isolated segments and emitting electrons when heated, a void adjacent the cathode to reduce heat dissipation, a luminescent material disposed on a screen to receive and react to electrons emitted by the cathode and thereby produce an optical emission, and a vacuum separating the cathode and the luminescent material. The thermionic optical emission device can be embodied as a diode, triode, or higher electrode device.
Abstract:
A cold cathode is formed of n-type boron nitride. The cathode may include a layer of diamond underlying the boron nitride. The cathodes are made by laser ablation or by sputtering. Electronic devices utilizing the boron nitride cathodes are also described.
Abstract:
A field emission device and method of forming same, comprising a substrate on which at least one conical electrode is provided, which substrate, with the exception of the proximity of the tip of the electrode, is covered with a layer of a dielectric material on which a conductive layer is present at least locally, in which in order to form an integrated accelerating electrode the conductive layer extends in the direction of the punctiform tip of the electrode to beyond the dielectric layer and shows an aperture above the tip so that the conductive layer forms a cap-shaped accelerating electrode surrounding the conical electrode.