公开(公告)号：US12087747B2

公开(公告)日：2024-09-10

申请号：US17159777

申请日：2021-01-27

申请人： Xiamen Tianma Micro-Electronics Co.,Ltd.

发明人： Liang Xing

IPC分类号： H01L29/18 ,  H01L25/16 ,  H01L33/00 ,  H01L33/62

CPC分类号： H01L25/167 ,  H01L33/62

摘要： A display panel and its fabrication method, and a display device are provided in the present disclosure. The display panel includes a substrate, including a display region; a light-emitting diode (LED) array at the display region, where the LED array includes a plurality of LED units arranged in an array; and a pulse-width modulation chip array at the display region, where the pulse-width modulation chip array includes a plurality of pulse-width modulation chips arranged in an array. The plurality of LED units is electrically connected to the plurality of pulse-width modulation chips in a one-to-one correspondence; and a pulse-width modulation chip of the plurality of pulse-width modulation chips is configured to adjust a light-emitting duration of a corresponding LED unit electrically connected thereto.

公开(公告)号：US20240297206A1

公开(公告)日：2024-09-05

申请号：US18645663

申请日：2024-04-25

申请人： SEOUL VIOSYS CO., LTD.

发明人： Jong Hyeon CHAE ,  Seong Gyu JANG ,  Ho Joon LEE ,  Chang Yeon KIM ,  Chung Hoon LEE

IPC分类号： H01L27/15 ,  H01L25/065 ,  H01L25/075 ,  H01L25/11 ,  H01L25/13 ,  H01L33/00 ,  H01L33/10 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50 ,  H01L33/62 ,  H10K10/84 ,  H10K50/813 ,  H10K50/818 ,  H10K50/822 ,  H10K50/828 ,  H10K59/32 ,  H10K59/35

CPC分类号： H01L27/156 ,  H01L25/0756 ,  H01L25/13 ,  H01L33/0093 ,  H01L33/10 ,  H01L33/405 ,  H01L33/42 ,  H01L33/507 ,  H01L33/62 ,  H01L25/0655 ,  H01L25/0753 ,  H01L25/115 ,  H01L33/38 ,  H01L33/382 ,  H10K10/84 ,  H10K50/813 ,  H10K50/818 ,  H10K50/822 ,  H10K50/828 ,  H10K59/32 ,  H10K59/35

摘要： A light emitting diode (LED) stack for a display including a first LED stack including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, an intermediate bonding layer disposed between the first LED stack and the second LED stack to bond the second LED stack to the first LED stack, an upper bonding layer disposed between the second LED stack and the third LED stack to couple the third LED stack to the second LED stack, and a first hydrophilic material layer disposed between the first LED stack and the upper bonding layer.

公开(公告)号：US12080830B2

公开(公告)日：2024-09-03

申请号：US17602138

申请日：2020-01-16

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Won Ho Lee ,  Jong Hyuk Kang ,  Hyun Deok Im ,  Hyun Min Cho

IPC分类号： H01L33/38 ,  H01L27/15 ,  H01L33/00 ,  H01L33/62

CPC分类号： H01L33/387 ,  H01L27/156 ,  H01L33/005 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

摘要： A pixel includes electrode pairs successively disposed in a first direction, and each including a first sub-electrode and a second sub-electrode successively disposed in the first direction; light emitting elements each electrically connected between the first sub-electrode and the second sub-electrode of any one the electrode pairs; a first connection electrode electrically connected between the first sub-electrode of a first electrode pair and a first power supply; and a second connection electrode electrically connected between the second sub-electrode of a last electrode pair and a second power supply. The second sub-electrode of a remaining electrode pair other than the last electrode pair is spaced apart from the first sub-electrode of a subsequent electrode pair with at least one first sub-electrode or at least one second sub-electrode disposed therebetween, and is electrically connected to the first sub-electrode of the subsequent electrode pair.

公开(公告)号：US20240290614A1

公开(公告)日：2024-08-29

申请号：US18581774

申请日：2024-02-20

申请人： Infineon Technologies Austria AG

发明人： Jori Anttoni Lemettinen

IPC分类号： H01L21/02 ,  H01L21/66 ,  H01L29/20 ,  H01L33/00

CPC分类号： H01L21/0254 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/02381 ,  H01L22/12 ,  H01L29/2003 ,  H01L33/007

摘要： A method of fabricating a Group III nitride layer on a substrate includes placing a substrate having a growth surface in a chamber of an apparatus configured for MOPVE (Metal Organic Vapour Phase Epitaxy) processing. A nitrogen-containing gas and no Group III element-containing gas is then supplied for a first time period. After expiry of the first time period, the supply of the nitrogen-containing gas is stopped. A Group III element-containing gas and no nitrogen-containing gas is then supplied to the apparatus for a second time period. After expiry of the second time period, the supply of the Group III element-containing gas to the apparatus is stopped for a third time period. After expiry of the third time period, the Group III element-containing gas and the nitrogen-containing gas is supplied to the apparatus and a Group III nitride layer is formed on the growth surface of the substrate.

公开(公告)号：US12074147B2

公开(公告)日：2024-08-27

申请号：US17833624

申请日：2022-06-06

申请人： LG ELECTRONICS INC.

发明人： Changseo Park ,  Bongchu Shim

IPC分类号： H01L29/18 ,  H01L23/00 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62

CPC分类号： H01L25/0753 ,  H01L24/32 ,  H01L33/62 ,  H01L33/0093 ,  H01L2224/32227 ,  H01L2933/0066

摘要： Discussed is a display device, including a substrate including a dielectric layer, a plurality of semiconductor light-emitting devices respectively accommodated on the substrate, and a first electrode provided with a plurality of electrode lines arranged on a bottom of the substrate. Each of the first electrode includes a pair of electrode lines spaced from each other on an upper surface of the dielectric layer among the plurality of electrode lines. Each semiconductor light-emitting device is disposed on the pair of electrode lines, and the pair of electrode lines have the same electrical pole.

公开(公告)号：US12074146B2

公开(公告)日：2024-08-27

申请号：US17597024

申请日：2021-12-13

申请人： WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.

发明人： Shijuan Yi

IPC分类号： H01L27/15 ,  H01L25/075 ,  H01L33/00 ,  H01L33/38 ,  H01L33/62

CPC分类号： H01L25/0753 ,  H01L33/005 ,  H01L33/382 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

摘要： A display panel and a manufacturing method thereof are disclosed. The display panel includes a substrate, a light extraction structure, and a thin film transistor array layer. The light extraction structure includes a plurality of light emitting diode (LED) chips, a first light extraction portion, a second light extraction portion, and a first metal layer. The second light extraction portion covers the first light extraction portion and the LED chips. Light achieves total reflection after passing through the first light extraction portion and the second light extraction portion and then irradiating a sidewall of the first metal layer, improving the light exit efficiency at a front viewing angle.

公开(公告)号：US12072073B2

公开(公告)日：2024-08-27

申请号：US17673520

申请日：2022-02-16

申请人： LUMILEDS LLC

发明人： Georg Henninger ,  Benno Spinger ,  Marcus Jozef Henricus Kessels ,  Matthias Epmeier ,  Floris Maria Hermansz Crompvoets

IPC分类号： F21S41/151 ,  F21K9/68 ,  F21S41/148 ,  F21S41/19 ,  F21S41/30 ,  F21Y103/10 ,  F21Y115/10 ,  H01L25/075 ,  H01L33/00 ,  H01L33/46 ,  H01L33/50 ,  H01L33/62 ,  F21S45/47

CPC分类号： F21S41/151 ,  F21K9/68 ,  F21S41/148 ,  F21S41/192 ,  F21S41/30 ,  H01L25/0753 ,  H01L25/0756 ,  H01L33/46 ,  H01L33/50 ,  H01L33/505 ,  F21S45/47 ,  F21Y2103/10 ,  F21Y2115/10 ,  H01L33/0095 ,  H01L33/62 ,  H01L2933/0025 ,  H01L2933/0041

摘要： A method for manufacturing light emitting elements is described and includes providing an un-coated light converting platelet. The un-coated light converting platelet has a top surface, a bottom surface, and side surfaces. A plurality of LED dies is provided. Side surfaces of the un-coated light converting platelet are coated with an at least partly reflective material to form a coated light converting platelet. The coated light converting platelet is separated into light converting tiles. An outline of the light converting tiles substantially corresponds to an outline of one of the plurality of LED dies. The light converting tiles and the plurality of LED dies are assembled to form light emitting elements.

公开(公告)号：US20240282885A1

公开(公告)日：2024-08-22

申请号：US18129799

申请日：2023-03-31

申请人： MACROBLOCK,INC.

发明人： Mei Tan WANG

IPC分类号： H01L33/00 ,  H01L25/075 ,  H01L33/62

CPC分类号： H01L33/0095 ,  H01L25/0753 ,  H01L33/62 ,  H01L2933/0066

摘要： A display module includes a substrate, an interposer and at least one micro light emitting element. The substrate has a driving circuit. The interposer includes an interlayer, a testing circuit and an electrically conductive structure. The testing circuit and the electrically conductive structure are located at the interlayer, and the driving circuit is electrically connected with the electrically conductive structure. The micro light emitting element is located at the interposer. The micro light emitting element is electrically connected with the testing circuit and the electrically conductive structure.

公开(公告)号：US20240279844A1

公开(公告)日：2024-08-22

申请号：US18623278

申请日：2024-04-01

申请人： MITSUBISHI CHEMICAL CORPORATION

发明人： Kenji ISO ,  Tatsuya TAKAHASHI ,  Tae MOCHIZUKI ,  Yuuki ENATSU

IPC分类号： C30B29/40 ,  C23C16/34 ,  C30B25/20 ,  H01L21/02 ,  H01L29/04 ,  H01L29/20 ,  H01L29/36 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32

CPC分类号： C30B29/406 ,  C23C16/34 ,  C30B25/20 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02576 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/36 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/16 ,  H01L33/32

摘要： Provided is an n-type GaN crystal, in which a donor impurity contained at the highest concentration is Ge, and which has a room-temperature resistivity of lower than 0.03 Ω·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec. The n-type GaN crystal has two main surfaces, each having an area of 3 cm2 or larger. One of the two main surfaces can have a Ga polarity and can be inclined at an angle of 0° to 10° with respect to a (0001) crystal plane. Further, the n-type GaN crystal can have a diameter of 20 mm or larger.

公开(公告)号：US12068432B2

公开(公告)日：2024-08-20

申请号：US17343239

申请日：2021-06-09

申请人： OSAKA UNIVERSITY

发明人： Yasufumi Fujiwara ,  Takeshi Uenoyama ,  Jun Tatebayashi ,  Shuhei Ichikawa

IPC分类号： H01L33/08 ,  H01L33/00 ,  H01L33/10 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62

CPC分类号： H01L33/08 ,  H01L33/0025 ,  H01L33/10 ,  H01L33/24 ,  H01L33/325 ,  H01L33/62

摘要： Provided is a display device including a light emitting unit that can emit a plurality of types of light having different wavelengths to the outside at a desired ratio with high intensity without increasing manufacturing costs in proportion to a number of pixels even when the number of pixels increases. Provided is a display device including a light emitting unit in which a plurality of types of PiN junction-type light emitting diodes that emit light having different wavelengths are arranged on the same substrate, and at least one type among the plurality of types of light emitting diodes has an active layer containing a rare earth element. Provided is a display device in which a plurality of types of light emitting diodes are sequentially stacked on the surface of a substrate, and a light emitting layer for one color is formed to overlap at least a portion of a light emitting layer for another color.