Abstract:
An atomic layer deposition (ALD) process deposits thin films for microelectronic structures, such as advanced gap and tunnel junction applications, by plasma annealing at varying film thicknesses to obtain desired intrinsic film stress and breakdown film strength. The primary advantage of the ALD process is the near 100% step coverage with properties that are uniform along sidewalls. The process provides smooth (Ra˜2 Å), pure (impurities
Abstract translation:原子层沉积(ALD)工艺通过等离子体退火在不同的膜厚度上沉积微电子结构的薄膜,例如先进的间隙和隧道结应用,以获得所需的本征膜应力和击穿膜强度。 ALD工艺的主要优点是接近100%的阶梯覆盖,其侧壁均匀分布。 该方法提供了具有改进的击穿强度(9-10MV / cm)的平滑的(R a aα2),纯的(杂质<1 AT。%),ALO x )具有商业上可行的吞吐量。
Abstract:
An AFM that combines an AFM Z position actuator and a self-actuated Z position cantilever (both operable in cyclical mode and contact mode), with appropriate nested feedback control circuitry to achieve high-speed imaging and accurate Z position measurements. A preferred embodiment of an AFM for analyzing a surface of a sample in either ambient air or fluid includes a self-actuated cantilever having a Z-positioning element integrated therewith and an oscillator that oscillates the self-actuated cantilever at a frequency generally equal to a resonant frequency of the self-actuated cantilever and at an oscillation amplitude generally equal to a setpoint value. The AFM includes a first feedback circuit nested within a second feedback circuit, wherein the first feedback circuit generates a cantilever control signal in response to vertical displacement of the self-actuated cantilever during a scanning operation, and the second feedback circuit is responsive to the cantilever control signal to generate a position control signal. A Z position actuator is also included within the second feedback circuit and is responsive to the position control signal to position the sample. In operation, preferably, the cantilever control signal alone is indicative of the topography of the sample surface. In a further embodiment, the first feedback circuit includes an active damping circuit for modifying the quality factor (“Q”) of the cantilever resonance to optimize the bandwidth of the cantilever response.
Abstract:
The movable point source aperture used in conventional autocollimators for measuring tilt in a microscope's test sample is replaced by a fixed laser diode. The diode is turned on only for the duration of the tilt measurement, when light is delivered to the optical system of the microscope without obstruction of the normal illumination path. Similarly, the two switchable optical systems conventionally used in the metrology and tilt-measurement legs of the microscope are replaced by two permanently positioned independent imaging systems. Such optical decoupling of the two types of measurement eliminates the need for switching lens systems, which enables shorter measurement cycles, reduces mechanical vibrations, and simplifies hardware control mechanisms.
Abstract:
A capacitance probe for thin dielectric film characterization provides a highly sensitive capacitance measurement method and reduces the contact area needed to obtain such a measurement. Preferably, the capacitance probe is connected to a measurement system by a transmission line and comprises a center conductive tip and RLC components between the center conductor and the ground of the transmission line. When the probe tip is in contact with a sample, an MIS or MIM structure is formed, with the RLC components and the capacitance of the MIS or MIM structure forming a resonant circuit. By sending a driving signal to the probe and measuring the reflected signal from the probe through the transmission line, the resonant characteristic of the resonant circuit can be obtained. The capacitance of the MIS or MIM structure is obtainable from the resonant characteristics and the dielectric film thickness or other dielectric properties are also extractable.
Abstract:
A goniometer includes a base, a compound member supported by the base, a light-directing element operably mounted on the compound member, optically connected to a coherent light source, and disposed toward an optical filter, a first actuator disposed along a first axis and operably coupled to the base for translating the light-directing element along a first arcuate path disposed in a first plane; and a second actuator disposed along a second axis and operably coupled to the compound member for translating the light-directing element along a second arcuate path disposed in a second plane, wherein the first plane is orthogonal to the second plane, and wherein the first and second axes are co-planar, for directing coherent light at an angle that is normal to the optical filter.
Abstract:
A metrology apparatus includes an actuator with a first actuator stage to controllably move in first and second orthogonal directions, and a second actuator stage adjacent to the first actuator stage to controllably move in a third direction orthogonal to the first and second orthogonal directions. A coupling is coupled to the second actuator stage and to a multi-bar linkage assembly fixed to a second end of a reference structure. The linkage supports a sample holder and transmits appropriate displacements generated by the actuator thereof The second actuator stage and the coupling move the linkage in the third orthogonal direction in a manner that substantially isolates the linkage from any second actuator stage motion in the first and second directions. An objective is fixed to the reference structure and is located between a light source and a position sensor. The position sensor measures first actuator stage motion in the first and second directions.
Abstract:
In accordance with one specific embodiment of the present invention, a Hall-current ion source is operated in a pulsed mode where the pulse duration is short compared to the time for discharge fluctuations to develop. For a reduced loss of neutral gas, the time between pulses should be less than, or about equal to, the fill time for the ionizable gas in the discharge volume of the Hall-current ion source.
Abstract:
A closed loop exit hole is formed in a magnetically permeable end wall (2) of an enclosure (1) of a closed electron drift ion source. Parts of this end wall separated by the exit hole serve as pole pieces (7 and 8) of the magnetic system and define the first pole gap. The magnetic system includes pole pieces (9 and 10), which define the second pole gap made in the form of a closed loop exit hole and arranged along the direction of ion emission. Magnetomotive force sources (5 and 6) are located in space between two groups of magnetic terminals. The ratio of width of each pole gap and distance between pole pieces of the first (7 and 8) and second (9 and 10) magnetic gaps along the direction of ion emission is not less than 0.05.The invention allows the intensity of the generated ion beam and the energy of ions to be increased, and this is provided by the homogeneous distribution of ion current density across the ion beam section.
Abstract:
A method and apparatus for manipulating the surface of a sample including a cantilever, a first tip mounted on the cantilever, and a second tip mounted on the cantilever, the first and the second tip being configured to combine to form an imaging probe and to separate to form a manipulation probe. The first and second tips are configured to form a first position characterized in that the tips combine to form an imaging tip and the first and the second tip are configured to form a second position characterized in that the tips separate to manipulate particles on a surface of a sample. The tips can be configured to form the first position when a voltage is applied across the tips, and preferable extend downwardly from the cantilever substantially perpendicular thereto.
Abstract:
Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel to a major dimension of the rectangular aperture and the substrate is moved orthogonally to the aperture's major dimension. The beam impinges the substrate through the aperture during movement. The substrate may be periodically rotated by approximately 180° to reorient the features relative to the major dimension of the rectangular aperture. The resulting treatment profile is symmetrical about the sides of the features oriented toward the major dimension of the rectangular aperture.