公开(公告)号：US20250105034A1

公开(公告)日：2025-03-27

申请号：US18824614

申请日：2024-09-04

Applicant: Applied Materials, Inc.

Inventor： Justin GAU ,  Dmitry LUBOMIRSKY

IPC: H01L21/67 ,  H01L21/687 ,  H05B3/22

Abstract: Disclosed herein are a pedestal heater and processing chamber containing the same. In one example, a pedestal heater for semiconductor substrate processing includes a heater body, a top cover and a bottom cover. The heater body includes at least one heating element. The top cover is disposed on a top surface of the heater body and has a higher thermal conductivity than the heater body. The bottom cover is disposed at a bottom surface of the heater body. In some examples, lift pin holes disposed through the top cover, the heater body and the bottom cover are aligned to accommodate lift pins.

公开(公告)号：US20250102072A1

公开(公告)日：2025-03-27

申请号：US18372804

申请日：2023-09-26

Applicant: Applied Materials, Inc.

Inventor： David Ishikawa ,  Sumedh Dattatraya Acharya ,  Arun Nagarajan ,  Ming Xu

IPC: F16K27/02 ,  F16K7/14 ,  F16K31/00 ,  F16K49/00

Abstract: Certain embodiments of the present disclosure relate to a fluid flow valve. The fluid flow valve includes a housing configured to receive a flow of fluid. The fluid flow valve further includes a first valve portion configured to proportionally control the flow of fluid through the housing. The fluid flow valve further includes a second valve portion in series with the first valve portion along a fluid flow path within the housing. The second valve portion is configured to actuate between an open position to permit the flow of fluid and a closed position to stop the flow of fluid.

公开(公告)号：US20250101578A1

公开(公告)日：2025-03-27

申请号：US18975559

申请日：2024-12-10

Applicant: Applied Materials, Inc.

Inventor： Xinhai Han ,  Hang Yu ,  Kesong Hu ,  Kristopher R. Enslow ,  Masaki Ogata ,  Wenjiao Wang ,  Chuan Ying Wang ,  Chuanxi Yang ,  Joshua Maher ,  Phaik Lynn Leong ,  Grace Qi En Teong ,  Alok Jain ,  Nagarajan Rajagopalan ,  Deenesh Padhi ,  SeoYoung Lee

IPC: C23C16/34 ,  C23C16/40 ,  H10B41/20 ,  H10B41/35 ,  H10B43/20 ,  H10B43/35

Abstract: Exemplary semiconductor structures may include a stack of layers overlying a substrate. The stack of layers may include a first portion of layers, a second portion of layers overlying the first portion of layers, and a third portion of layers overlying the second portion of layers. The first portion of layers, the second portion of layers, and the third portion of layers may include alternating layers of a silicon oxide material and a silicon nitride material. One or more apertures may be formed through the stack of layers. A lateral notch in each individual layer of silicon nitride material at an interface of the individual layer of silicon nitride material and an overlying layer of silicon oxide material may extend a distance less than or about 100% of a distance corresponding to a thickness of the individual layer of silicon nitride material.

公开(公告)号：US20250101575A1

公开(公告)日：2025-03-27

申请号：US18371708

申请日：2023-09-22

Applicant: Applied Materials, Inc.

Inventor： Yaoying ZHONG ,  Siew Kit HOI ,  Haomin XU ,  Li Ying CHOO ,  Xiao TAN ,  Jay Min SOH

IPC: C23C16/04 ,  C23C16/12

Abstract: A method for depositing a film layer on a substrate incorporates ion flux control to alter sputtering atom trajectories. A method may include flowing argon gas around a periphery of the substrate with a surface of the substrate having a plurality of structures with sidewalls and an edge region containing edge structures near the periphery of the substrate, forming a plasma to ionize the argon gas to form Ar+ ion flux to induce sputtering of aluminum to generate aluminum atoms for deposition on the substrate, generating an AC bias on the substrate to increase the Ar+ ion flux density at the edge region of the substrate to alter aluminum atom trajectories striking the edge region, and heating the substrate to increase mobility of the aluminum atoms deposited on the edge structures.

公开(公告)号：US20250100105A1

公开(公告)日：2025-03-27

申请号：US18373657

申请日：2023-09-27

Applicant: Applied Materials, Inc.

Inventor： Michael Prestoza DECENA ,  Tsu-Hui YANG ,  Sridhar K. N. ,  Parthiban BALAKRISHNAN ,  Yuan LING ,  Sylvia SUN ,  Simpson WEN ,  Chih An CHANG ,  Tk WANG ,  Chao-Jian HUANG

IPC: B24B41/06 ,  B24B37/30

Abstract: The disclosure provides an apparatus for substrate polishing, the apparatus includes a housing member, a carrier member, and a distal force assembly. The carrier member is coupled to and disposed radially outward of the housing member. The distal force assembly disposed radially inward of an exterior portion of the carrier member and radially outward of the housing member. The distal force assembly includes a bladder seal, a seal ring in contact with the bladder seal. The seal ring has a seal ring face and one or more grooves disposed therein. The grooves include a plateau radius and a ridge radius disposed opposite the plateau radius at an intersection between the seal ring face and the grooves, wherein the plateau radius and the ridge radius are between about 0.012 to about 0.018 inches. The distal force assembly also includes a transfer ring coupled to the seal ring opposite the bladder.

公开(公告)号：US12261037B2

公开(公告)日：2025-03-25

申请号：US16434507

申请日：2019-06-07

Applicant: Applied Materials, Inc.

Inventor： Golnaz Karbasian ,  Keith T. Wong

IPC: H01L21/02

Abstract: Methods of depositing thin films of hafnium oxide possessing strong ferroelectric properties are described. A hafnium oxide monolayer is formed in a first process cycle comprising sequential exposure of a substrate to a hafnium precursor, purge gas, first oxidant and purge gas. A doped hafnium oxide monolayer is formed in a second process cycle comprising sequential exposure of the substrate to a hafnium precursor, purge gas, dopant precursor, purge gas, second oxidant and purge gas. Thin films of hafnium oxide are also described.

公开(公告)号：US20250098363A1

公开(公告)日：2025-03-20

申请号：US18968275

申请日：2024-12-04

Applicant: Applied Materials, Inc.

Inventor： Philip Hsin-hua Li ,  Seshadri Ramaswami

IPC: H01L31/0392 ,  H01L31/0749 ,  H01L31/18

Abstract: A device includes a bottom contact layer on a substrate, an absorber layer on the bottom contact layer, a cap layer on the absorber layer, a hole blocker layer on the cap layer, and a top contact layer on the hole blocker layer. The absorber layer includes oxygen-annealed copper, indium, gallium and selenium. The device has a quantum efficiency greater than about 50%, measured at a voltage of about −1 volt and at a wavelength of about 940 nanometers.

公开(公告)号：US20250095984A1

公开(公告)日：2025-03-20

申请号：US18370536

申请日：2023-09-20

Applicant: Applied Materials, Inc.

Inventor： Sonam Dorje Sherpa ,  Iljo Kwak ,  Kenji Takeshita ,  Alok Ranjan

IPC: H01L21/02 ,  H01L21/306

Abstract: Methods of semiconductor processing may include providing a silicon-containing precursor and an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A feature may extend through one or more layers of material disposed on the substrate. The methods may include forming plasma effluents of the silicon-containing precursor and the oxygen-containing precursor. The methods may include contacting the substrate with the plasma effluents of the silicon-containing precursor and the oxygen-containing precursor. The contacting may form a silicon-and-oxygen-containing material on at least a bottom portion of the feature. A temperature in the processing region may be maintained at less than or about 0° C.

公开(公告)号：US20250095967A1

公开(公告)日：2025-03-20

申请号：US18370155

申请日：2023-09-19

Applicant: Applied Materials, Inc.

Inventor： Morgan D. Evans ,  Peter F. Kurunczi

IPC: H01J37/32

Abstract: A plasma source having two extraction apertures is disclosed. The extraction apertures are not co-planar, allowing a scanned workpiece to be impacted by particles or ions from two different directions during a single scan pass. The chamber housing of the plasma source may be cylindrical or may have a polygonal cross-section. In some embodiments, external plates are mounted to the chamber housing to provide defining apertures which serve to further collimate the particles or ions that exit each extraction aperture. Various different plasma generators may be utilized with this plasma source, including internal antenna elements, external coils, cathodes, filaments and other mechanisms.

公开(公告)号：US20250095965A1

公开(公告)日：2025-03-20

申请号：US18967465

申请日：2024-12-03

Applicant: Applied Materials, Inc.

Inventor： DAVID COUMOU ,  NATHAN RANSOM ,  PRIYA GAMBHIRE ,  JEREMY ZUCH ,  SENTHIL KUMAR VADIVELU

IPC: H01J37/32

Abstract: Embodiments disclosed herein include a method for field adjusting calibrating factors of a plurality of RF impedance matches for control of a plurality of plasma chambers. In an embodiment, the method comprises collecting and storing in a memory data from operation of the plurality of RF impedance matches, and finding a tune space for each of the plurality of RF impedance matches from the collected data. In an embodiment, the method further comprises finding adjustments to account for variability in each of the plurality of RF impedance matches, finding adjustments to variable tuning elements of the plurality of RF impedance matches to account for time varying and process related load impedances, and the method further comprises obtaining operating windows for the variable tuning elements in the plurality of RF impedance matches.