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    Photoreceiver of selectively detecting light of a specific wavelength and the method of manufacturing the same
    61.
    发明授权
    Photoreceiver of selectively detecting light of a specific wavelength and the method of manufacturing the same 失效
    选择性地检测特定波长的光的光接收器及其制造方法

    公开(公告)号：US06689667B2

    公开(公告)日：2004-02-10

    申请号：US10209252

    申请日：2002-07-30

    Applicant: Eun soo Nam ,  Heacheon Kim

    Inventor： Eun soo Nam ,  Heacheon Kim

    IPC: H01L218222

    CPC classification number: B82Y20/00 ,  H01L31/035236 ,  H01L31/105

    Abstract: The present invention relates to a photoreceiver and method of manufacturing the same. For the purpose of a selective detection of a specific wavelength, if a waveguide type photodetector using a multiple quantum-well layer having a quantum confined stark effect as an optical absorption layer, the wavelength that is absorbed by the stark effect by which the transition energy edge of the optical absorption band is varied depending on the intensity of an electric field applied to the multiple quantum-well layer is varied. Thus, a wavelength selective detection characteristic can be varied simply implemented. The waveguide type photodetector of this structure is integrated on a semi-insulating InP substrate with a heterogeneous bipolar transistor having an n+InP/p+InGaAs/n−InGaAs/n+InGaAsP high-gain amplification characteristic. Thus, a photoreceiver of a high performance and a high sensitivity having a specific wavelength selective detection function that can be used in an optical communication system of a high-performance wavelength-multiplexing mode can be provided.

    Abstract translation: 光接收器及其制造方法技术领域本发明涉及光接收器及其制造方法。 为了选择性地检测特定波长，如果使用具有量子局限性效应的多量子阱层作为光吸收层的波导型光电检测器，则通过转移能量的斯塔克效应吸收的波长 光吸收带的边缘根据施加到多量子阱层的电场的强度而变化。 因此，可以简单地实现波长选择性检测特性。 该结构的波导型光检测器集成在具有n + InP / p + InGaAs / n-InGaAs / n + InGaAsP高增益放大特性的异质双极晶体管的半绝缘InP衬底上。 因此，可以提供具有可用于高性能波长多路复用模式的光通信系统中的具有特定波长选择性检测功能的高性能和高灵敏度的光接收器。

    Method of fabricating a high power semiconductor laser with self-aligned ion implantation
    62.
    发明授权
    Method of fabricating a high power semiconductor laser with self-aligned ion implantation 有权
    制造具有自对准离子注入的大功率半导体激光器的方法

    公开(公告)号：US6165811A

    公开(公告)日：2000-12-26

    申请号：US195690

    申请日：1998-11-19

    Applicant: Jung Kee Lee ,  Kyung Hyun Park ,  Ho Sung Cho ,  Eun Soo Nam ,  Dong Hoon Jang

    Inventor： Jung Kee Lee ,  Kyung Hyun Park ,  Ho Sung Cho ,  Eun Soo Nam ,  Dong Hoon Jang

    IPC: H01S5/30 ,  H01S5/20 ,  H01S5/22 ,  H01L21/00

    CPC classification number: H01S5/22 ,  H01S5/2068 ,  H01S5/2081 ,  H01S5/209

    Abstract: A method of fabricating a semiconductor laser comprises the steps of sequentially depositing a lower cladding layer, an active layer, a first upper cladding layer, an etching stop layer, a second upper cladding layer and an ohmic contact layer over a compound semiconductor substrate, forming an etching mask over the ohmic contact layer so as to expose channel regions and to shield the ridge regions between the channel regions, performing wet etching to etch the ohmic contact layer and the second upper cladding layer so as to expose the etching stop layer so as to form the channels and the ridges having narrower widths than the parts of the etching mask shielding the ridge regions, and implanting dopant ions into the parts of the first upper cladding layer and the active layer below the channels to form ion-implanted regions by using the etching mask as the ion implantation mask.

    Abstract translation: 一种制造半导体激光器的方法包括以下步骤：在化合物半导体衬底上依次沉积下包层，有源层，第一上覆层，蚀刻停止层，第二上覆层和欧姆接触层，形成 在欧姆接触层上的蚀刻掩模，以暴露沟道区域并屏蔽沟道区域之间的脊区域，执行湿蚀刻以蚀刻欧姆接触层和第二上包层，以暴露蚀刻停止层，以便 以形成通道和脊部，其宽度比屏蔽脊区域的蚀刻掩模的部分窄，并且将掺杂剂离子注入到沟道下方的第一上包层和活性层的部分中，以通过使用 蚀刻掩模作为离子注入掩模。

    POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
    66.
    发明申请
    POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 失效
    功率半导体器件及其制造方法

    公开(公告)号：US20130069173A1

    公开(公告)日：2013-03-21

    申请号：US13592560

    申请日：2012-08-23

    Applicant: Woo Jin CHANG ,  Jong Won LIM ,  Ho Kyun AHN ,  Sang Choon KO ,  Sung Bum BAE ,  Chull Won JU ,  Young Rak PARK ,  Jae Kyoung MUN ,  Eun Soo NAM

    Inventor： Woo Jin CHANG ,  Jong Won LIM ,  Ho Kyun AHN ,  Sang Choon KO ,  Sung Bum BAE ,  Chull Won JU ,  Young Rak PARK ,  Jae Kyoung MUN ,  Eun Soo NAM

    IPC: H01L29/78 ,  H01L21/336

    CPC classification number: H01L29/66901 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

    Abstract: Disclosed are a power semiconductor device and a method of fabricating the same which can increase a breakdown voltage of the device through a field plate formed between a gate electrode and a drain electrode and achieve an easier manufacturing process at the same time. The power semiconductor device according to an exemplary embodiment of the present disclosure includes a source electrode and a drain electrode formed on a substrate; a dielectric layer formed between the source electrode and the drain electrode to have a lower height than heights of the two electrodes and including an etched part exposing the substrate; a gate electrode formed on the etched part; a field plate formed on the dielectric layer between the gate electrode and the drain electrode;and a metal configured to connect the field plate and the source electrode.

    Abstract translation: 公开了功率半导体器件及其制造方法，其可以通过形成在栅电极和漏电极之间的场板来增加器件的击穿电压，并且同时实现更容易的制造工艺。 根据本公开的示例性实施例的功率半导体器件包括形成在衬底上的源电极和漏电极; 形成在所述源电极和所述漏电极之间的电介质层具有比所述两个电极的高度低的高度，并且包括暴露所述衬底的蚀刻部分; 形成在蚀刻部分上的栅电极; 形成在栅电极和漏电极之间的电介质层上的场板; 以及配置成连接场板和源电极的金属。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    67.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120146107A1

    公开(公告)日：2012-06-14

    申请号：US13274367

    申请日：2011-10-17

    Applicant: Jong-Won LIM ,  Hokyun Ahn ,  Dong Min Kang ,  Woojin Chang ,  Hae Cheon Kim ,  Eun Soo Nam

    Inventor： Jong-Won LIM ,  Hokyun Ahn ,  Dong Min Kang ,  Woojin Chang ,  Hae Cheon Kim ,  Eun Soo Nam

    IPC: H01L29/772 ,  H01L21/28

    CPC classification number: H01L29/42376 ,  H01L29/2003 ,  H01L29/40 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/812

    Abstract: Disclosed are a semiconductor device and a method of manufacturing the same. In the semiconductor device according to an exemplary embodiment of the present disclosure, at the time of forming a source electrode, a drain electrode, a field plate electrode, and a gate electrode on a substrate having a heterojunction structure such as AlGaN/GaN, the field plate electrode made of the same metal as the gate electrode is formed on the side surface of a second support part positioned below a head part of the gate electrode so as to prevent the gate electrode from collapsing and improve high-frequency and high-voltage characteristic of the semiconductor device.

    Abstract translation: 公开了一种半导体器件及其制造方法。 在根据本公开的示例性实施例的半导体器件中，在具有诸如AlGaN / GaN的异质结结构的衬底上形成源电极，漏电极，场板电极和栅电极时， 由与栅电极相同的金属制成的场板电极形成在位于栅电极的头部下方的第二支撑部分的侧表面上，以防止栅电极塌陷并改善高频和高电压 半导体器件的特性。

    OPTICAL WAVEGUIDE STRUCTURE HAVING ANGLED MIRROR AND LENS
    68.
    发明申请
    OPTICAL WAVEGUIDE STRUCTURE HAVING ANGLED MIRROR AND LENS 审中-公开
    具有光学镜片和镜片的光学波形结构

    公开(公告)号：US20120114293A1

    公开(公告)日：2012-05-10

    申请号：US13250019

    申请日：2011-09-30

    Applicant: Joong-Seon Choe ,  Duk Jun Kim ,  Chun Ju Youn ,  Jong-Hoi Kim ,  Kwang-Seong Choi ,  Yong-Hwan Kwon ,  Eun Soo Nam

    Inventor： Joong-Seon Choe ,  Duk Jun Kim ,  Chun Ju Youn ,  Jong-Hoi Kim ,  Kwang-Seong Choi ,  Yong-Hwan Kwon ,  Eun Soo Nam

    IPC: G02B6/036 ,  B05D5/06

    CPC classification number: G02B6/32 ,  G02B6/12 ,  G02B6/4214

    Abstract: The present disclosure relates to a planar optical waveguide element, and more particularly, to an optical waveguide end structure for effective optical signal connection with a light source, a light receiving element, or a different type of optical waveguide element.According to an exemplary embodiment of the present disclosure, there is disclosed an optical waveguide structure, including: a planar optical waveguide including a lower clad, a waveguide core formed on the lower clad, and a clad layer formed on the waveguide core; and an optical lens formed on a surface of the clad layer.One end of the optical waveguide forms an inclined surface having a predetermined inclination angle.

    Abstract translation: 本发明涉及一种平面光波导元件，更具体地，涉及一种用于与光源，光接收元件或不同类型的光波导元件的有效光信号连接的光波导端结构。 根据本公开的示例性实施例，公开了一种光波导结构，包括：平面光波导，包括下包层，形成在下包层上的波导芯和形成在波导芯上的覆层; 以及形成在包层的表面上的光学透镜。 光波导的一端形成具有预定倾斜角的倾斜面。

    Feedback Amplifier
    69.
    发明申请
    Feedback Amplifier 有权
    反馈放大器

    公开(公告)号：US20120105158A1

    公开(公告)日：2012-05-03

    申请号：US13185913

    申请日：2011-07-19

    Applicant: Sang-Heung LEE ,  Hae Cheon Kim ,  Eun Soo Nam

    Inventor： Sang-Heung LEE ,  Hae Cheon Kim ,  Eun Soo Nam

    IPC: H03F3/04

    CPC classification number: H03F3/08 ,  H03F1/34 ,  H03F3/3432 ,  H03F2200/121 ,  H03F2200/141 ,  H03F2200/18

    Abstract: Provided is a feedback amplifier including: an amplification circuit unit to generate an output voltage by amplifying an input voltage inputted through an input terminal; an output circuit unit to output the generated output voltage through an output terminal; a feedback circuit unit to control the gain of the amplification circuit unit by determining a total feedback resistance value using an external control signal and controlling an input current while the total feedback resistance value is determined; and a bias circuit unit to apply a bias voltage to the feedback circuit unit.

    Abstract translation: 提供一种反馈放大器，包括：放大电路单元，通过放大通过输入端子输入的输入电压来产生输出电压; 输出电路单元，用于通过输出端子输出产生的输出电压; 反馈电路单元，其通过使用外部控制信号确定总反馈电阻值来控制放大电路单元的增益，并且在确定总反馈电阻值的同时控制输入电流; 以及偏置电路单元，用于向反馈电路单元施加偏置电压。

    Method for fabricating field effect transistor using a compound semiconductor
    70.
    发明授权
    Method for fabricating field effect transistor using a compound semiconductor 有权
    使用化合物半导体制造场效应晶体管的方法

    公开(公告)号：US08053345B2

    公开(公告)日：2011-11-08

    申请号：US12773216

    申请日：2010-05-04

    Applicant: Hokyun Ahn ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Woojin Chang ,  Hae Cheon Kim ,  Eun Soo Nam

    Inventor： Hokyun Ahn ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Woojin Chang ,  Hae Cheon Kim ,  Eun Soo Nam

    IPC: H01L21/3205 ,  H01L21/44

    CPC classification number: H01L29/66462

    Abstract: Provided is a method for fabricating a field effect transistor. In the method, an active layer and a capping layer are formed on a substrate. A source electrode and a drain electrode is formed on the capping layer. A dielectric interlayer is formed on the substrate, and resist layers having first and second openings with asymmetrical depths are formed on the dielectric interlayer between the source electrode and the drain electrode. The first opening exposes the dielectric interlayer, and the second opening exposes the lowermost of the resist layers. The dielectric interlayer in the bottom of the first opening and the lowermost resist layer under the second opening are simultaneously removed to expose the capping layer to the first opening and expose the dielectric interlayer to the second opening. The capping layer of the first opening is removed to expose the active layer. A metal layer is deposited on the substrate to simultaneously form a gate electrode and a field plate in the first opening and the second opening. The resist layers are removed to lift off the metal layer on the resist layers.

    Abstract translation: 提供了一种用于制造场效应晶体管的方法。 在该方法中，在基板上形成有源层和覆盖层。 源极电极和漏电极形成在覆盖层上。 在基板上形成电介质中间层，在源电极和漏极之间的电介质层间形成有具有不对称深度的第一和第二开口的抗蚀剂层。 第一开口露出电介质中间层，第二开口露出最低层的抗蚀剂层。 同时除去第一开口底部的电介质中间层和第二开口下面的最下面的抗蚀剂层，以将覆盖层暴露于第一开口，并将电介质中间层暴露于第二开口。 去除第一开口的覆盖层以暴露活性层。 金属层沉积在基板上，以在第一开口和第二开口中同时形成栅电极和场板。 去除抗蚀剂层以剥离抗蚀剂层上的金属层。

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