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    Method of fabricating near field optical probe
    61.
    发明授权
    Method of fabricating near field optical probe 失效
    制造近场光学探针的方法

    公开(公告)号：US07393713B2

    公开(公告)日：2008-07-01

    申请号：US11020180

    申请日：2004-12-27

    申请人： Eun Kyoung Kim ,  Sung Q Lee ,  Ki Bong Song ,  Kang Ho Park

    发明人： Eun Kyoung Kim ,  Sung Q Lee ,  Ki Bong Song ,  Kang Ho Park

    IPC分类号： H01L21/00

    CPC分类号： G01Q60/22 ,  G11B7/1387

    摘要： Provided is a method of fabricating a near-field optical probe adapted to a near-field scanning optical microscopy and a near-field information storage device, in which a cantilever and an optical tip are provided in one body and the optical tip is arranged to face the upper portion of the substrate. High-concentrated boron ions are implanted into an uppermost silicon layer of a silicon on insulator (SOI) substrate, and a silicon layer into which boron ions are implanted while the silicon inside the tip is etched to form the hole to act as an etch stop layer, thereby easily removing the silicon inside the tip even with the cantilever exposed, and simplifying the process due to the simultaneous fabrication of the cantilever and the tip.

    摘要翻译： 本发明提供一种制造适用于近场扫描光学显微镜和近场信息存储装置的近场光学探针的方法，其中悬臂和光学尖端设置在一体内，并且光学尖端布置成 面对基板的上部。 将高浓度硼离子注入到绝缘体上硅（SOI）衬底的最上层的硅层中，并且注入硼离子的硅层，同时蚀刻尖端内部的硅以形成蚀刻停止孔 从而即使悬臂暴露也容易去除尖端内的硅，并且由于悬臂和尖端的同时制造而简化了工艺。

    INTERDIGITATED ELECTRODE FOR ELECTRONIC DEVICE AND ELECTRONIC DEVICE USING THE SAME
    62.
    发明申请
    INTERDIGITATED ELECTRODE FOR ELECTRONIC DEVICE AND ELECTRONIC DEVICE USING THE SAME 有权
    用于电子器件的电极和使用该电极的电子器件

    公开(公告)号：US20080134792A1

    公开(公告)日：2008-06-12

    申请号：US11865427

    申请日：2007-10-01

    申请人： Sung Q. LEE ,  Hye Jin Kim ,  Kang Ho Park ,  Jong Dae Kim

    发明人： Sung Q. LEE ,  Hye Jin Kim ,  Kang Ho Park ,  Jong Dae Kim

    IPC分类号： H01B7/00 ,  G01H11/08 ,  G01L9/06

    CPC分类号： G01L9/0022 ,  H01L41/047 ,  H01L41/0825 ,  H01L41/0973 ,  H01L41/1138

    摘要： Provided are an interdigitated electrode (IDE) for an electronic device, which includes a plurality of anodes and a plurality of cathodes arranged radially in an alternating fashion for electrical insulation from one another, and an electronic device using the same. The IDE in which the anodes and the cathodes are arranged radially in an alternating fashion is fabricated and applied to the electronic device, so that the entire fabrication process can be simplified compared to that of a typical electronic device in which an upper electrode is different from a lower electrode. Also, circular or polygonal IDEs can be applied to systems that are driven or measure values on their central axes, thereby enhancing the performance and efficiency of the systems. Furthermore, the circular or polygonal IDEs can be employed in systems such as acoustic sensors, pressure sensors, micro-speakers, biological sensors, and acceleration sensors, so that the structure and operation of the systems can be simplified.

    摘要翻译： 提供了一种用于电子设备的叉指电极（IDE），其包括多个阳极和以交替方式径向排列的用于彼此电绝缘的多个阴极和使用该阴极的电子设备。 阳极和阴极以交替的方式径向排列的IDE被制造并施加到电子器件，使得与上电极不同于其中的典型电子器件的整个制造工艺相比，可以简化整个制造工艺 下电极。 此外，圆形或多边形IDE可以应用于驱动或测量其中心轴上的值的系统，从而提高系统的性能和效率。 此外，圆形或多边形IDE可用于诸如声学传感器，压力传感器，微型扬声器，生物传感器和加速度传感器的系统中，从而可以简化系统的结构和操作。

    Charge effect transistor and a method for manufacturing the same
    64.
    发明授权
    Charge effect transistor and a method for manufacturing the same 有权
    电荷效应晶体管及其制造方法

    公开(公告)号：US5942790A

    公开(公告)日：1999-08-24

    申请号：US136612

    申请日：1998-08-20

    申请人： Kang Ho Park ,  Jeong Sook Ha

    发明人： Kang Ho Park ,  Jeong Sook Ha

    IPC分类号： H01L29/78 ,  H01L21/32 ,  H01L29/76 ,  H01L29/772 ,  H01L45/00 ,  H01L29/47

    CPC分类号： H01L29/7606 ,  H01L21/32 ,  H01L29/772 ,  H01L45/00 ,  Y10S257/902

    摘要： A new conceptional transistor and a method for manufacturing, which increases the integration of semiconductor devices using conventional MOS devices are provided. The present invention provides a transistor in which a structure of metal-insulator film-metal dot-metal (MIMIM), metal-insulator film-metal dot-semiconductor (MIMS), or semiconductor-metal dot-semiconductor (SMS) is formed, using junction of electrodes operating as a source and a drain having a metal dot of nm therebetween, and the current flow between source and drain is controlled by controlling tunneling and Schottky barrier formed between the source and the metal dot using the method of controlling electrical potential of metal dot through charging effect of gate electrode isolated by a thick insulator.

    摘要翻译： 提供了新的概念晶体管和制造方法，其增加了使用常规MOS器件的半导体器件的集成。 本发明提供了一种晶体管，其中形成金属 - 绝缘体薄膜 - 金属点金属（MIMIM），金属 - 绝缘体 - 金属点半导体（MIMS）或半导体 - 金属点半导体（SMS）的结构， 使用作为源极的电极和具有其间的金属点的漏极的结，并且通过使用控制电位的方法控制在源极和金属点之间形成的隧道和肖特基势垒来控制源极和漏极之间的电流。 的金属点通过由绝缘体隔离的栅电极的充电效应。

    Method for manufacturing a single electron transistor by using a scanning tunneling microscopy
    65.
    发明授权
    Method for manufacturing a single electron transistor by using a scanning tunneling microscopy 失效
    使用扫描隧道显微镜制造单电子晶体管的方法

    公开(公告)号：US5710051A

    公开(公告)日：1998-01-20

    申请号：US694316

    申请日：1996-08-08

    申请人： Kang-Ho Park ,  Jeong-Sook Ha ,  El-Hang Lee

    发明人： Kang-Ho Park ,  Jeong-Sook Ha ,  El-Hang Lee

    IPC分类号： H01L29/772 ,  B82B3/00 ,  G01Q60/10 ,  G01Q70/14 ,  H01L21/3205 ,  H01L21/335 ,  H01L29/76 ,  H01L49/00 ,  H01L21/00

    CPC分类号： H01L49/006 ,  B82Y10/00 ,  H01L21/32051 ,  H01L29/66439 ,  H01L29/7613 ,  Y10S977/851 ,  Y10S977/855 ,  Y10S977/861 ,  Y10S977/875 ,  Y10S977/937

    摘要： A method for the manufacture of a single electron transistor (SET) in a vacuum state, wherein the SET operates in room temperature, comprises the steps of: approaching an Au tip of a scanning tunneling microscopy (STM) on top of a silicon-substrate having a silicon oxide layer on top thereof to maintain a distance from top of the oxide layer to end of the Au tip of the STM; forming an Au cluster on top of the oxide layer by using a low field evaporation method employing the STM, thereby forming a two dimensional island structure on top of the oxide layer, wherein the low field evaporation method employing the STM generates an electronic pulse between top of the oxide layer and end of the Au tip of the STM by applying a voltage to the Au tip of the STM; forming a source and a drain to both sides of the Au cluster in the two dimensional island structure, respectively, in such a way that the Au cluster in the two dimensional island structure maintains a gap with the source and the drain, thereby forming an electron tunneling barrier on right and left of the Au cluster in the two dimensional island structure; and joining a gate on bottom of the silicon-substrate.

    摘要翻译： 一种用于在真空状态下制造单电子晶体管（SET）的方法，其中SET在室温下工作，包括以下步骤：在硅衬底顶部接近扫描隧道显微镜（STM）的Au尖端 在其顶部具有氧化硅层以保持从氧化物顶部到STM的Au尖端的距离; 通过使用采用STM的低场蒸发法在氧化物层的顶部上形成Au簇，从而在氧化物层的顶部形成二维岛状结构，其中采用STM的低场蒸发方法在顶部产生电子脉冲 通过向STM的Au尖端施加电压而使STM的氧化物层和Au尖端的端部; 在二维岛结构中分别在Au簇的两侧形成源极和漏极，使得二维岛状结构中的Au簇与源极和漏极保持间隙，从而形成电子 Au簇在二维岛结构左右的隧道势垒; 并且在硅衬底的底部连接栅极。

    Low-power security and intrusion monitoring system and method based on variation detection of sound transfer characteristic
    66.
    发明授权
    Low-power security and intrusion monitoring system and method based on variation detection of sound transfer characteristic 有权
    基于声音传输特性变化检测的低功率安全和入侵监控系统及方法

    公开(公告)号：US09240113B2

    公开(公告)日：2016-01-19

    申请号：US13270444

    申请日：2011-10-11

    申请人： Sung Q Lee ,  Kang-Ho Park

    发明人： Sung Q Lee ,  Kang-Ho Park

    IPC分类号： G01S15/00 ,  G08B13/16 ,  G01S15/04

    CPC分类号： G08B13/1609 ,  G01S15/04

    摘要： Disclosed are a method for measuring a acoustic transfer function of a predetermined space to be secured or monitored through a correlation between sound signals acquired from a sound source generating device and a sound measuring device and a method and a system for judging whether there is an intrusion object by using a difference between an initially set acoustic transfer function information and varied acoustic transfer function information by using the method for measuring the transfer function. In the present disclosure, when an object moves or an intrusion object is generated in a predetermined space, intrusion or no intrusion is monitored by variation of the acoustic transfer function varied by the intrusion object even though there is no noise generated by the intrusion object.

    摘要翻译： 公开了一种通过从声源生成装置获取的声音信号与声音测量装置之间的相关性来测量要保证或监视的预定空间的声学传递函数的方法和用于判断是否存在入侵的方法和系统 通过使用用于测量传递函数的方法，通过使用初始设置的声学传递函数信息和变化的声学传递函数信息之间的差异来对象。 在本公开中，当对象移动或者在预定空间中产生入侵对象时，即使没有入侵对象产生的噪声，也可以通过入侵对象改变的声音传递函数的变化来监视入侵或不入侵。

    Security system and method using measurement of acoustic field variation
    67.
    发明授权
    Security system and method using measurement of acoustic field variation 有权
    使用声场变化测量的安全系统和方法

    公开(公告)号：US08797407B2

    公开(公告)日：2014-08-05

    申请号：US12878414

    申请日：2010-09-09

    申请人： Sung Q Lee ,  Hye Jin Kim ,  Hong Yeol Lee ,  Kang Ho Park ,  Jong Dae Kim

    发明人： Sung Q Lee ,  Hye Jin Kim ,  Hong Yeol Lee ,  Kang Ho Park ,  Jong Dae Kim

    IPC分类号： H04N7/18 ,  G08B13/00 ,  G01S15/52 ,  G01S15/88 ,  G08B13/16 ,  G08B13/196

    CPC分类号： G01S15/526 ,  G01S15/88 ,  G08B13/1609 ,  G08B13/19695

    摘要： A security system and a method of determining whether there is an intrusion are provided. A correlation between sound signals obtained from a sound source generating device and a sound-field variation measuring device is used to measure a acoustic field in a certain space. A difference between an initially set acoustic field and a changed acoustic field is used to determine whether there is an intruding object in a certain space. The security system includes a sound source generating device for generating a sound source; and a sound-field variation measuring device for measuring a acoustic field formed by the sound source, wherein an initially set acoustic field is compared with the measured acoustic field to determine whether there is an intrusion.

    摘要翻译： 提供一种确定是否存在入侵的安全系统和方法。 使用从声源发生装置获取的声音信号和声场变化测量装置之间的相关性来测量某个空间中的声场。 使用初始设置的声场和改变的声场之间的区别来确定在某个空间中是否存在入侵物体。 安全系统包括用于产生声源的声源产生装置; 以及用于测量由声源形成的声场的声场变化测量装置，其中将初始设置的声场与所测量的声场进行比较以确定是否存在入侵。

    Piezoelectric speaker and method of manufacturing the same
    69.
    发明授权
    Piezoelectric speaker and method of manufacturing the same 有权
    压电扬声器及其制造方法

    公开(公告)号：US08712079B2

    公开(公告)日：2014-04-29

    申请号：US12507364

    申请日：2009-07-22

    申请人： Hye Jin Kim ,  Sung Q Lee ,  Min Cheol Shin ,  Kang Ho Park ,  Jong Dae Kim

    发明人： Hye Jin Kim ,  Sung Q Lee ,  Min Cheol Shin ,  Kang Ho Park ,  Jong Dae Kim

    IPC分类号： H04R25/00 ,  H04R1/20

    CPC分类号： H04R17/00 ,  H04R1/06 ,  H04R31/006 ,  H04R2499/11

    摘要： A piezoelectric speaker and a method of manufacturing the same that can obtain a high sound pressure using a piezoelectric thin film are provided. The piezoelectric speaker includes a piezoelectric thin film, electrodes formed on an upper surface or upper and lower surfaces of the piezoelectric thin film, a damping material layer formed on the lower surface of the piezoelectric thin film, and a frame attached around at least one of the piezoelectric thin film and the damping material layer using an adhesive.

    摘要翻译： 提供一种使用压电薄膜可以获得高声压的压电扬声器及其制造方法。 压电扬声器包括压电薄膜，形成在压电薄膜的上表面或上表面和下表面上的电极，形成在压电薄膜的下表面上的阻尼材料层和围绕至少一个 压电薄膜和使用粘合剂的阻尼材料层。