公开(公告)号：US20110068466A1

公开(公告)日：2011-03-24

申请号：US12832019

申请日：2010-07-07

申请人： Ming-Fa Chen ,  Wen-Chih Chiou ,  Shau-Lin Shue

发明人： Ming-Fa Chen ,  Wen-Chih Chiou ,  Shau-Lin Shue

IPC分类号： H01L23/498

CPC分类号： H01L24/81 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76816 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05025 ,  H01L2224/05546 ,  H01L2224/05547 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/06181 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/14181 ,  H01L2224/811 ,  H01L2224/8136 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2224/05552 ,  H01L2924/00

摘要： An integrated circuit structure includes a semiconductor substrate having a front surface and a back surface; a conductive via passing through the semiconductor substrate; and a metal feature on the back surface of the semiconductor substrate. The metal feature includes a metal pad overlying and contacting the conductive via, and a metal line over the conductive via. The metal line includes a dual damascene structure. The integrated circuit structure further includes a bump overlying the metal line.

摘要翻译： 集成电路结构包括具有前表面和后表面的半导体衬底; 穿过半导体衬底的导电通孔; 以及在半导体衬底的后表面上的金属特征。 金属特征包括覆盖并接触导电通孔的金属焊盘以及导电通孔上方的金属线。 金属线包括双镶嵌结构。 集成电路结构还包括覆盖金属线的凸块。

公开(公告)号：US20110035937A1

公开(公告)日：2011-02-17

申请号：US12840903

申请日：2010-07-21

申请人： Yung-Jean Lu ,  Ming-Fa Chen ,  Chen-Shien Chen ,  Jao Sheng Huang

发明人： Yung-Jean Lu ,  Ming-Fa Chen ,  Chen-Shien Chen ,  Jao Sheng Huang

IPC分类号： H05K13/00

CPC分类号： H01L21/6833 ,  Y10T29/49124

摘要： A system and method for a semiconductor wafer carrier is disclosed. An embodiment comprises a semiconductor wafer carrier wherein conductive dopants are implanted into the carrier in order to amplify the coulombic forces between an electrostatic chuck and the carrier to compensate for reduced forces that result from thinner semiconductor wafers. Another embodiment forms conductive layers and vias within the carrier instead of implanting conductive dopants.

摘要翻译： 公开了一种用于半导体晶片载体的系统和方法。 一个实施方案包括半导体晶片载体，其中将导电掺杂剂注入到载体中，以便放大静电卡盘和载体之间的库仑力，以补偿由较薄的半导体晶片产生的减小的力。 另一个实施例在载体内形成导电层和通孔，而不是注入导电掺杂剂。

公开(公告)号：US20100176494A1

公开(公告)日：2010-07-15

申请号：US12617259

申请日：2009-11-12

申请人： Ming-Fa Chen

发明人： Ming-Fa Chen

IPC分类号： H01L23/48 ,  H01L21/3205

CPC分类号： H01L23/481 ,  H01L21/3065 ,  H01L21/31055 ,  H01L21/31116 ,  H01L21/6836 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76898 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/13009 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/059 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00

摘要： A semiconductor substrate having a through-silicon via with an air gap interposed between the through-silicon via and the semiconductor substrate is provided. An opening is formed partially through the semiconductor substrate. The opening is first lined with a first liner and then the opening is filled with a conductive material. A backside of the semiconductor substrate is thinned to expose the first liner, which is subsequently removed and a second liner formed with a low-k or extra low-k dielectric is formed in its place.

摘要翻译： 提供一种半导体衬底，其具有穿过硅通孔和半导体衬底之间的气隙的通硅通孔。 部分地通过半导体衬底形成开口。 开口首先衬有第一衬里，然后开口填充有导电材料。 半导体衬底的背面变薄以露出第一衬垫，随后将其移除，并且在其位置形成形成有低k或超低k电介质的第二衬垫。

公开(公告)号：US20100164117A1

公开(公告)日：2010-07-01

申请号：US12347745

申请日：2008-12-31

申请人： Ming-Fa Chen

发明人： Ming-Fa Chen

IPC分类号： H01L23/48 ,  H01L21/311

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L21/7682 ,  H01L23/481 ,  H01L23/5222 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2221/6834 ,  H01L2221/68372 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor substrate having a through-silicon via with an air gap interposed between the through-silicon via and the semiconductor substrate is provided. An opening is formed partially through the semiconductor substrate. The opening is first lined with a liner and then the opening is filled with a conductive material. A backside of the semiconductor substrate is thinned to expose the liner, which is subsequently removed to form an air gap around the conductive material of the through-silicon via. A dielectric layer is formed of the backside of the semiconductor substrate to seal the air gap.

摘要翻译： 提供一种半导体衬底，其具有穿过硅通孔和半导体衬底之间的气隙的通硅通孔。 部分地通过半导体衬底形成开口。 开口首先用衬里衬里，然后开口填充有导电材料。 半导体衬底的背面被薄化以暴露衬里，衬垫随后被去除以在通过硅通孔的导电材料周围形成气隙。 电介质层由半导体衬底的背面形成以密封气隙。

公开(公告)号：US20060106469A1

公开(公告)日：2006-05-18

申请号：US10989494

申请日：2004-11-17

申请人： Ming-Chang Huang ,  Ming-Fa Chen

发明人： Ming-Chang Huang ,  Ming-Fa Chen

IPC分类号： G05B13/02 ,  G06F17/18 ,  G06F19/00 ,  G06F15/00

CPC分类号： G05B23/0235 ,  G05B23/027 ,  Y10T70/5115 ,  Y10T70/5124

摘要： A system for performing statistical process control. A storage device stores a plurality of SPC charts, specifying data collected from a system during testing. A controller categorizes the SPC charts into a plurality of groups based on characteristics thereof. A detector determines whether the charts in any of the groups violate a preset rule. An alarm generator generates alarm information identifying the chart violating the rule.

摘要翻译： 用于执行统计过程控制的系统。 存储装置存储多个SPC图，指定在测试期间从系统收集的数据。 控制器基于其特征将SPC图分类为多个组。 检测器确定任何组中的图表是否违反预设规则。 报警发生器产生标识违反规则的图表的报警信息。

公开(公告)号：US07026580B2

公开(公告)日：2006-04-11

申请号：US10810978

申请日：2004-03-26

申请人： Yao-Hwan Kao ,  Jia-Sheng Lee ,  De-Yuan Lu ,  Ming-Fa Chen

发明人： Yao-Hwan Kao ,  Jia-Sheng Lee ,  De-Yuan Lu ,  Ming-Fa Chen

IPC分类号： F27B5/14

CPC分类号： H01L21/67017 ,  F27B17/0025 ,  F27D19/00 ,  H01L21/67109

摘要： A method and apparatus for adjusting exhaust flow, and the apparatus has a programmable exhaust control regulator generating a first input signal to a motor control circuit, an exhaust flow meter generating a second input signal to the motor control circuit and a motor driven control valve moved to different positions according to the first and second input signals, the control valve being installed in an exhaust portion of the hot plate apparatus.

摘要翻译： 一种用于调节排气流量的方法和装置，并且该装置具有可编程排气控制调节器，其产生到马达控制电路的第一输入信号，产生到马达控制电路的第二输入信号的排气流量计和马达驱动的控制阀移动 根据第一和第二输入信号到不同的位置，控制阀安装在热板装置的排气部分中。