利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

127 条记录 (耗时 0.035 秒)

    Dry Etching Agent and Dry Etching Method Using the Same
    62.
    发明申请
    Dry Etching Agent and Dry Etching Method Using the Same 有权
    干蚀刻剂和干法蚀刻方法

    公开(公告)号：US20120298911A1

    公开(公告)日：2012-11-29

    申请号：US13576093

    申请日：2011-01-25

    申请人： Yasuo Hibino ,  Tomonori Umezaki ,  Akiou Kikuchi ,  Isamu Mori ,  Satoru Okamoto

    发明人： Yasuo Hibino ,  Tomonori Umezaki ,  Akiou Kikuchi ,  Isamu Mori ,  Satoru Okamoto

    IPC分类号： C09K13/00

    CPC分类号： H01L21/31055 ,  C09K13/00 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32136

    摘要： A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF3CCX where X is H, F, Cl, Br, I, CH3, CFH2 or CF2H; and either of: (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2 and COF2; (C) at least one kind of gas selected from the group consisting of F2, NF3, Cl2, Br2, I2 and YFn where Y is Cl, Br or I; and n is an integer of 1 to 5; and (D) at least one kind of gas selected from the group consisting of CF4, CHF3, C2F6, C2F5H, C2F4H2, C3F8, C3F4H2, C3ClF3H and C4F8. This dry etching agent has a small environmental load and a wide process window and can be applied for high-aspect-ratio processing without special operations such as substrate excitation.

    摘要翻译： 根据本发明的干蚀刻剂包含（A）由化学式CF3CCX表示的氟化丙炔，其中X是H，F，Cl，Br，I，CH 3，CFH 2或CF 2 H; 和（B）选自O 2，O 3，CO，CO 2，COCl 2和COF 2中的至少一种气体; （C）选自由F2，NF3，Cl2，Br2，I2和YFn组成的组中的至少一种气体，其中Y是Cl，Br或I; n为1〜5的整数。 和（D）选自CF4，CHF3，C2F6，C2F5H，C2F4H2，C3F8，C3F4H2，C3ClF3H和C4F8中的至少一种气体。 这种干蚀刻剂具有小的环境负荷和宽的工艺窗口，并且可以应用于高纵横比处理，而不需要诸如基板激励的特殊操作。

    Optical node device, network control device, maintenance-staff device, optical network, and 3R relay implementation node decision method
    64.
    发明授权
    Optical node device, network control device, maintenance-staff device, optical network, and 3R relay implementation node decision method 有权
    光节点设备，网络控制设备，维护人员设备，光网络和3R中继实现节点决策方法

    公开(公告)号：US08081881B2

    公开(公告)日：2011-12-20

    申请号：US12417173

    申请日：2009-04-02

    申请人： Eiji Oki ,  Akira Misawa ,  Masaru Katayama ,  Satoru Okamoto

    发明人： Eiji Oki ,  Akira Misawa ,  Masaru Katayama ,  Satoru Okamoto

    IPC分类号： H04B10/00 ,  H04B10/02 ,  H04B10/08 ,  H04B10/20

    CPC分类号： H04J14/0284 ,  H04B10/299 ,  H04J14/0227 ,  H04J14/0246 ,  H04J14/025 ,  H04J14/0256 ,  H04J14/0257 ,  H04J14/0258 ,  H04J14/0267 ,  H04J14/0269 ,  H04L41/12

    摘要： An economical optical network is constituted by effectively using network resources by using the minimum number of, or minimum capacity of 3R repeaters. 3R section information corresponding to topology information on the optical network to which an optical node device itself belongs is stored, and the 3R section information stored is referred so as to autonomously determine whether or not the optical node device itself is an optical node device for implementing the 3R relay when setting an optical path passing through the optical node device itself. Alternatively, when the optical node device itself is a source node, another optical node device for implementing the 3R relay among the other optical node devices through which the optical path from the optical node device itself to the destination node passes is identified, and this identified optical node device is requested to implement the 3R relay when setting an optical path in which the optical node device itself is a source node.

    摘要翻译： 通过使用3R中继器的最小或最小容量有效地使用网络资源来构成经济的光网络。 存储与光节点设备本身所属的光网络上的拓扑信息对应的3R部分信息，并且参考存储的3R部分信息，以便自主地确定光节点设备本身是否是用于实现的光节点设备 当设置通过光节点设备本身的光路时，3R继电器。 或者，当光节点设备本身是源节点时，识别用于在从光节点设备本身到目的地节点通过的光路经过的其他光节点设备中实现3R中继器的另一光节点设备，并且这被识别 要求光节点设备在设置光节点设备本身是源节点的光路时实现3R中继。

    WIRING OVER SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING THEREOF
    65.
    发明申请
    WIRING OVER SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING THEREOF 有权
    基板接线，半导体器件及其制造方法

    公开(公告)号：US20110272816A1

    公开(公告)日：2011-11-10

    申请号：US13187746

    申请日：2011-07-21

    申请人： Shinya SASAGAWA ,  Satoru OKAMOTO ,  Shigeharu MONOE

    发明人： Shinya SASAGAWA ,  Satoru OKAMOTO ,  Shigeharu MONOE

    IPC分类号： H01L23/48 ,  H05K1/11

    CPC分类号： H01L27/3276 ,  G02F2001/13629 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/5281 ,  H01L2924/0002 ,  H05K3/06 ,  H05K2203/0315 ,  H05K2203/0346 ,  H05K2203/095 ,  H05K2203/1476 ,  H01L2924/00

    摘要： A wiring over a substrate capable of reducing particles between wirings and a method for manufacturing the wiring is disclosed. A wiring over a substrate capable of preventing short-circuiting between wirings due to big difference in projection and depression between wirings and a method for manufacturing the wiring is also disclosed. Further, a wiring over a substrate capable of preventing cracks in the insulating layer due to stress at the edge of a wiring or particles and a method for manufacturing the wiring is also disclosed. According to the present invention, a method for manufacturing a wiring over a substrate is provided that comprises the steps of: forming a first conductive layer over an insulating surface; forming a first mask pattern over the first conductive layer; forming a second mask pattern by etching the first mask pattern under a first condition, simultaneously, forming a second conductive layer having a side having an angle of inclination cross-sectionally by etching the first conductive layer; and forming a third conductive layer and a third mask pattern by etching the second conductive layer and the second mask pattern under a second condition; wherein a selective ratio under the first condition of the first conductive layer to the first mask pattern is in a range of 0.25 to 4, and a selective ratio under the second condition of the second conductive layer to the second mask pattern is larger than that under the first condition.

    摘要翻译： 公开了一种能够减少布线之间的颗粒的基板上的布线和用于制造布线的方法。 还公开了一种能够防止布线之间的大的差异和配线间的凹陷之间的布线之间的短路的布线和布线的制造方法。 此外，还公开了能够防止由于布线或颗粒的边缘处的应力导致的绝缘层中的裂纹的基板上的布线以及布线的制造方法。 根据本发明，提供了一种用于在衬底上制造布线的方法，包括以下步骤：在绝缘表面上形成第一导电层; 在所述第一导电层上形成第一掩模图案; 通过在第一条件下蚀刻第一掩模图案形成第二掩模图案，同时通过蚀刻第一导电层形成具有横截面为倾斜角的一侧的第二导电层; 以及通过在第二条件下蚀刻所述第二导电层和所述第二掩模图案来形成第三导电层和第三掩模图案; 其中在第一导电层与第一掩模图案的第一条件下的选择比在0.25至4的范围内，并且在第二导电层与第二掩模图案的第二条件下的选择比大于 第一个条件。

    Formation method of single crystal semiconductor layer, formation method of crystalline semiconductor layer, formation method of polycrystalline layer, and method for manufacturing semiconductor device
    66.
    发明授权
    Formation method of single crystal semiconductor layer, formation method of crystalline semiconductor layer, formation method of polycrystalline layer, and method for manufacturing semiconductor device 有权
    单晶半导体层的形成方法，结晶半导体层的形成方法，多晶层的形成方法以及半导体装置的制造方法

    公开(公告)号：US07888242B2

    公开(公告)日：2011-02-15

    申请号：US12257448

    申请日：2008-10-24

    申请人： Koichiro Tanaka ,  Satoru Okamoto

    发明人： Koichiro Tanaka ,  Satoru Okamoto

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： H01L27/1266 ,  C30B29/06 ,  C30B31/22 ,  C30B33/00 ,  C30B35/00 ,  H01L21/76251 ,  H01L27/1214

    摘要： A method for forming a single crystal semiconductor layer in which a first porous layer and a second porous layer are formed over a single crystal semiconductor ingot, a groove is formed in a part of the second porous layer and a single crystal semiconductor layer is formed over the second porous layer, the single crystal semiconductor ingot is attached onto a large insulating substrate, water jet is directed to the interface between the first porous layer and the second porous layer, and the single crystal semiconductor layer is attached to the large insulating substrate, or a method for forming a crystalline semiconductor layer in which a crystalline semiconductor ingot is irradiated with hydrogen ions to form a hydrogen ion irradiation region in the crystalline semiconductor ingot, the crystalline semiconductor ingot is rolled over the large insulating substrate while being heated, the crystalline semiconductor layer is separated from the hydrogen ion irradiation region, and the crystalline semiconductor layer is attached to the large insulating substrate.

    摘要翻译： 一种形成单晶半导体层的方法，其中第一多孔层和第二多孔层形成在单晶半导体锭上，在第二多孔层的一部分中形成沟槽，并且形成单晶半导体层 将第二多孔层，单晶半导体晶片安装在大的绝缘基板上，将水射流引导到第一多孔层和第二多孔层之间的界面，并且将单晶半导体层附着在大绝缘基板上， 或用于形成结晶半导体层的方法，其中晶体半导体晶锭被氢离子照射以在晶体半导体晶锭中形成氢离子照射区域，晶体半导体晶锭在加热时在大绝缘基板上滚动，晶体 半导体层与氢离子照射区域分离，并产生哭泣 马赛尼半导体层附着在大绝缘基板上。

    Semiconductor device and manufacturing method thereof
    67.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US07800114B2

    公开(公告)日：2010-09-21

    申请号：US12116384

    申请日：2008-05-07

    申请人： Satoru Okamoto

    发明人： Satoru Okamoto

    IPC分类号： H01L27/14

    CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/127 ,  H01L29/78621 ,  H01L2029/7863 ,  Y10S438/978

    摘要： Manufacture of TFTs corresponding to various circuits makes structures thereof complex, which involves a larger number of manufacturing steps. Such an increase in the number of the manufacturing steps leads to a higher manufacturing cost and a lower manufacturing yield. In the invention, a high concentration of impurities is doped by using as masks a tapered resist that is used for the manufacture of a tapered gate electrode, and the tapered gate electrode, and then the tapered gate electrode is etched in the perpendicular direction using the resist as a mask. A semiconductor layer under the thusly removed tapered portion of the gate electrode is doped with a low concentration of impurities.

    摘要翻译： 对应于各种电路的TFT的制造使其结构复杂，其涉及更多的制造步骤。 这种制造步骤数量的增加导致制造成本更高和制造成品率更低。 在本发明中，通过使用用于制造锥形栅电极的锥形抗蚀剂和锥形栅电极，然后使用以下方式在垂直方向上蚀刻锥形栅电极来掺杂高浓度的杂质 抗拒作为面具。 在栅电极的如此去除的锥形部分下方的半导体层掺杂有低浓度的杂质。

    Ink container and ink jet recording apparatus
    68.
    发明授权
    Ink container and ink jet recording apparatus 有权
    墨水容器和喷墨记录装置

    公开(公告)号：US07717548B2

    公开(公告)日：2010-05-18

    申请号：US11475101

    申请日：2006-06-27

    申请人： Setsuji Tatsumi ,  Yasuhiko Kachi ,  Yoshihiro Ito ,  Satoru Okamoto

    发明人： Setsuji Tatsumi ,  Yasuhiko Kachi ,  Yoshihiro Ito ,  Satoru Okamoto

    IPC分类号： B41J2/175

    CPC分类号： B41J2/17513 ,  B41J2002/17516

    摘要： An ink cartridge is partitioned into a negative pressure generator chamber containing a negative pressure generator and a storage chamber containing an ink bag. The ink bag stores ink and supplies the ink to the negative pressure generator chamber through an ink port. The negative pressure generator absorbs and holds the ink by its capillary force, to keep pressure inside nozzles of a recording head negative to atmospheric pressure. Through a first air introduction hole, the air is introduced into the negative pressure generator chamber as the ink in the negative pressure generator chamber decreases. Through a second air introduction hole, the air is introduced into the storage chamber as the ink in the ink bag decreases. So variations in pressure inside the nozzles are suppressed, which makes ink discharge from the nozzles stable.

    摘要翻译： 墨盒被分隔成负压发生器室，该负压发生器容纳有负压发生器和容纳墨袋的储存室。 墨水袋存储墨水并通过墨水口将墨水供应到负压发生器室。 负压发生器通过其毛细管力吸收和保持墨水，以将记录头的喷嘴内的压力保持为大气压力。 通过第一空气引入孔，当负压发生器室中的墨水减少时，空气被引入负压发生器室。 通过第二空气引入孔，当墨袋中的墨水减少时，空气被引入储存室。 因此，抑制了喷嘴内的压力变化，这使得喷嘴的墨水排出稳定。

    Method for manufacturing semiconductor device
    69.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07563658B2

    公开(公告)日：2009-07-21

    申请号：US11314011

    申请日：2005-12-22

    申请人： Akihiro Ishizuka ,  Satoru Okamoto ,  Shigeharu Monoe ,  Shunpei Yamazaki

    发明人： Akihiro Ishizuka ,  Satoru Okamoto ,  Shigeharu Monoe ,  Shunpei Yamazaki

    IPC分类号： H01L21/20

    CPC分类号： H01L21/32136 ,  C23F4/00 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/42384 ,  H01L29/4908 ,  H01L51/5092

    摘要： The present invention relates to a method for manufacturing a semiconductor film, including the steps of forming a transparent conductive film, forming a first conductive film over the transparent conductive film, forming a second conductive film over the first conductive film, etching the second conductive film with a gas including chlorine, and etching the first conductive film with a gas including fluorine. During etching of the second conductive film with a gas including chlorine, the transparent conductive film is protected by the first conductive film. During etching of the first conductive film with the gas including fluorine, the transparent conductive film does not react with the gas including fluorine. Therefore, no particle is formed.

    摘要翻译： 半导体膜的制造方法技术领域本发明涉及半导体膜的制造方法，其特征在于，包括以下步骤：形成透明导电膜，在所述透明导电膜上形成第一导电膜，在所述第一导电膜上形成第二导电膜，蚀刻所述第二导电膜 用包括氯的气体，并用包括氟的气体蚀刻第一导电膜。 在用包括氯的气体蚀刻第二导电膜的过程中，透明导电膜被第一导电膜保护。 在利用包含氟的气体对第一导电膜进行蚀刻期间，透明导电膜不与包含氟的气体反应。 因此，不形成粒子。

    IMAGE TAKING APPARATUS, IMAGE REPRODUCING APPARATUS, IMAGE TAKING METHOD AND PROGRAM
    70.
    发明申请
    IMAGE TAKING APPARATUS, IMAGE REPRODUCING APPARATUS, IMAGE TAKING METHOD AND PROGRAM 有权
    图像采集设备，图像再现设备，图像采集方法和程序

    公开(公告)号：US20080316300A1

    公开(公告)日：2008-12-25

    申请号：US12123894

    申请日：2008-05-20

    申请人： Satoru Okamoto

    发明人： Satoru Okamoto

    IPC分类号： H04N13/02

    CPC分类号： H04N13/20 ,  H04N5/2258 ,  H04N5/232 ,  H04N5/23245 ,  H04N5/772 ,  H04N5/907 ,  H04N9/8042 ,  H04N9/8063 ,  H04N9/8205 ,  H04N13/189

    摘要： To prevent information required for reproducing of a 3D/multi-viewpoint image being lost even in a case in which editing or the like of the 3D/multi-viewpoint image is performed using a device or application software that does not support 3D/multi-viewpoint images, a compound-eye digital camera can switch between a multi-viewpoint image taking mode that images a subject image viewed from a plurality of viewpoints and a single viewpoint image taking mode that takes a subject image viewed from a single viewpoint. When taking an image in the multi-viewpoint image taking mode, the compound-eye digital camera sets a protect flag for multi-viewpoint images acquired with an image pickup device and records the multi-viewpoint images. As a result, the taken multi-viewpoint images are protected, and erasure or editing of the images cannot be performed without permission.

    摘要翻译： 即使在使用不支持3D /多视点图像的设备或应用软件执行3D /多视点图像的编辑等的情况下，也可以防止再现3D /多视点图像的丢失所需的信息， 视点图像，复眼数码相机可以在从多个视点观看的被摄体图像成像的多视点图像拍摄模式和从单个视点观看被摄体图像的单个视点图像拍摄模式之间切换。 当以多视点拍摄模式拍摄图像时，复眼数码相机设置用图像拾取装置获取的多视点图像的保护标志，并记录多视点图像。 结果，拍摄的多视点图像被保护，并且不允许擦除或编辑图像。